公开(公告)号：US20240186202A1

公开(公告)日：2024-06-06

申请号：US18415268

申请日：2024-01-17

申请人： Intel Corporation

发明人： Rahul JAIN ,  Kyu Oh LEE ,  Siddharth K. ALUR ,  Wei-Lun K. JEN ,  Vipul V. MEHTA ,  Ashish DHALL ,  Sri Chaitra J. CHAVALI ,  Rahul N. MANEPALLI ,  Amruthavalli P. ALUR ,  Sai VADLAMANI

IPC分类号： H01L23/31 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/498 ,  H01L23/532 ,  H01L23/538 ,  H01L25/065

CPC分类号： H01L23/3185 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/53295 ,  H01L23/5381 ,  H01L23/5383 ,  H01L23/5386 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0655 ,  H01L25/0657 ,  H01L2224/16227 ,  H01L2224/81 ,  H01L2224/83051 ,  H01L2924/18161

摘要： An apparatus is provided which comprises: a substrate, a die site on the substrate to couple with a die, a die side component site on the substrate to couple with a die side component, and a raised barrier on the substrate between the die and die side component sites to contain underfill material disposed at the die site, wherein the raised barrier comprises electroplated metal. Other embodiments are also disclosed and claimed.

公开(公告)号：US11990447B2

公开(公告)日：2024-05-21

申请号：US17484959

申请日：2021-09-24

申请人： Mitsubishi Electric Corporation

发明人： Isao Oshima

IPC分类号： H01L23/00

CPC分类号： H01L24/83 ,  H01L24/32 ,  H01L2224/32225 ,  H01L2224/83051 ,  H01L2224/83141 ,  H01L2224/83191 ,  H01L2224/83192

摘要： A first alignment resin (4) is formed in an annular shape on an electrode (3) of an insulating substrate (1). First plate solder (5) having a thickness thinner than that of the first alignment resin (4) is arranged on the electrode (3) on an inner side of the annular shape of the first alignment resin (4). A semiconductor chip (6) is arranged on the first plate solder (5). The first plate solder (5) is made to melt to bond a lower surface of the semiconductor chip (6) to the electrode (3).

公开(公告)号：US20150311172A1

公开(公告)日：2015-10-29

申请号：US14745056

申请日：2015-06-19

申请人： STATS ChipPAC, Ltd.

发明人： Rajendra D. Pendse

IPC分类号： H01L23/00 ,  H01L23/31

CPC分类号： H01L24/17 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/49811 ,  H01L23/49838 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13016 ,  H01L2224/13018 ,  H01L2224/13019 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1411 ,  H01L2224/16 ,  H01L2224/1601 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/17107 ,  H01L2224/27013 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/75 ,  H01L2224/75301 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81194 ,  H01L2224/81203 ,  H01L2224/81208 ,  H01L2224/81345 ,  H01L2224/81385 ,  H01L2224/81801 ,  H01L2224/83051 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83385 ,  H01L2224/83856 ,  H01L2224/93 ,  H01L2224/94 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15787 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/13109 ,  H01L2924/3512 ,  H01L2924/0665 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/81805

摘要： A semiconductor device has a semiconductor die with a plurality of composite bumps formed over a surface of the semiconductor die. The composite bumps have a fusible portion and non-fusible portion, such as a conductive pillar and bump formed over the conductive pillar. The composite bumps can also be tapered. Conductive traces are formed over a substrate with interconnect sites having edges parallel to the conductive trace from a plan view for increasing escape routing density. The interconnect site can have a width less than 1.2 times a width of the conductive trace. The composite bumps are wider than the interconnect sites. The fusible portion of the composite bumps is bonded to the interconnect sites so that the fusible portion covers a top surface and side surface of the interconnect sites. An encapsulant is deposited around the composite bumps between the semiconductor die and substrate.

摘要翻译： 半导体器件具有形成在半导体管芯的表面上的多个复合凸块的半导体管芯。 复合凸块具有可熔部分和不可熔部分，例如形成在导电柱上的导电柱和凸块。 复合凸块也可以是锥形的。 导电迹线形成在具有从平面图平行于导电迹线的边缘的互连位置的衬底上，以增加逃逸路由密度。 互连部位可以具有小于导电迹线宽度的1.2倍的宽度。 复合凸块比互连部位宽。 复合凸块的可熔部分结合到互连部位，使得可熔部分覆盖互连部位的顶表面和侧表面。 围绕半导体管芯和衬底之间的复合凸块沉积密封剂。

公开(公告)号：US09165900B2

公开(公告)日：2015-10-20

申请号：US14174364

申请日：2014-02-06

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Yuan-Chang Su ,  Shih-Fu Huang ,  Chia-Cheng Chen ,  Chia-Hsiung Hsieh ,  Tzu-Hui Chen ,  Kuang-Hsiung Chen ,  Pao-Ming Hsieh

IPC分类号： H01L23/00 ,  H01L21/683 ,  H01L23/31 ,  H01L23/498 ,  H05K1/11

CPC分类号： H01L23/3128 ,  H01L21/6835 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L2221/68345 ,  H01L2224/27013 ,  H01L2224/32188 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/484 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A package carrier includes: (a) a dielectric layer defining a plurality of openings; (b) a patterned electrically conductive layer, embedded in the dielectric layer and disposed adjacent to a first surface of the dielectric layer; (c) a plurality of electrically conductive posts, disposed in respective ones of the openings, wherein the openings extend between a second surface of the dielectric layer to the patterned electrically conductive layer, the electrically conductive posts are connected to the patterned electrically conductive layer, and an end of each of the electrically conductive posts has a curved profile and is faced away from the patterned electrically conductive layer; and (d) a patterned solder resist layer, disposed adjacent to the first surface of the dielectric layer and exposing portions of the patterned electrically conductive layer corresponding to contact pads. A semiconductor package includes the package carrier, a chip, and an encapsulant covering the chip and the package carrier.

摘要翻译： 包装载体包括：（a）限定多个开口的电介质层; （b）图案化的导电层，嵌入在介电层中并邻近电介质层的第一表面设置; （c）多个导电柱，设置在各个开口中，其中开口在介质层的第二表面与图案化的导电层之间延伸，导电柱连接到图案化的导电层， 并且每个导电柱的端部具有弯曲轮廓并且背离图案化的导电层; 和（d）图案化的阻焊层，邻近电介质层的第一表面设置并暴露与接触焊盘对应的图案化导电层的部分。 半导体封装包括封装载体，芯片和覆盖芯片和封装载体的密封剂。

公开(公告)号：US20140284749A1

公开(公告)日：2014-09-25

申请号：US14297779

申请日：2014-06-06

申请人： Sony Corporation

发明人： Satoru Wakiyama ,  Hiroshi Ozaki

IPC分类号： H01L23/31 ,  H01L27/146 ,  H01L21/56 ,  H01L23/00

CPC分类号： H01L27/14636 ,  H01L21/56 ,  H01L21/563 ,  H01L23/31 ,  H01L24/05 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0657 ,  H01L27/14605 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/14683 ,  H01L27/1469 ,  H01L2224/0401 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/14515 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/26145 ,  H01L2224/26175 ,  H01L2224/27013 ,  H01L2224/29011 ,  H01L2224/29035 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73103 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/83051 ,  H01L2224/83104 ,  H01L2224/83365 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15788 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： Disclosed herein is a semiconductor device including: a first semiconductor chip having an electronic circuit section and a first connecting section formed on one surface thereof; a second semiconductor chip having a second connecting section formed on one surface thereof, the second semiconductor chip being mounted on the first semiconductor chip with the first and the second connecting sections connected to each other by a bump; a dam formed to fill a gap between the first and the second semiconductor chips on a part of an outer edge of the second semiconductor chip, the part of the outer edge being on a side of a region of formation of the electronic circuit section; and an underfill resin layer filled into the gap, protrusion of the resin layer from the outer edge of the second semiconductor chip to a side of the electronic circuit section being prevented by the dam.

摘要翻译： 本发明公开了一种半导体器件，包括：具有电子电路部分的第一半导体芯片和在其一个表面上形成的第一连接部分; 具有在其一个表面上形成的第二连接部分的第二半导体芯片，所述第二半导体芯片安装在所述第一半导体芯片上，所述第一和第二连接部分通过凸块相互连接; 形成为在所述第二半导体芯片的外缘的一部分上填充所述第一和第二半导体芯片之间的间隙的坝，所述外边缘的一部分位于所述电子电路部的形成区域的一侧; 并且填充到间隙中的底部填充树脂层，树脂层从第二半导体芯片的外边缘突出到电子电路部分的侧面被大坝阻止。

公开(公告)号：US08709879B2

公开(公告)日：2014-04-29

申请号：US13835683

申请日：2013-03-15

申请人： Ji-hyun Park ,  Heungkyu Kwon ,  Min-Ok Na ,  Taehwan Kim

发明人： Ji-hyun Park ,  Heungkyu Kwon ,  Min-Ok Na ,  Taehwan Kim

IPC分类号： H01L21/56

CPC分类号： H01L21/56 ,  H01L21/563 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/3142 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/26175 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83051 ,  H01L2224/83385 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/00

摘要： A semiconductor package includes a substrate having an insulation layer. The insulation layer has a first region having a first surface roughness and a second region having a second surface roughness. A semiconductor chip is mounted in the first region, and an underfill resin solution is filled into the space between the semiconductor chip and the insulation layer. The roughness of the second region prevents the underfill resin from flowing out from the semiconductor chip to thereby reduce a size of the semiconductor package.

摘要翻译： 半导体封装包括具有绝缘层的衬底。 绝缘层具有第一表面粗糙度的第一区域和具有第二表面粗糙度的第二区域。 半导体芯片安装在第一区域中，底部填充树脂溶液填充到半导体芯片和绝缘层之间的空间中。 第二区域的粗糙度防止底部填充树脂从半导体芯片流出，从而减小半导体封装的尺寸。

公开(公告)号：US20140008792A1

公开(公告)日：2014-01-09

申请号：US14021914

申请日：2013-09-09

申请人： STATS ChipPAC, Ltd.

发明人： Rajendra D. Pendse

IPC分类号： H01L23/498 ,  H01L23/00

CPC分类号： H01L24/17 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/49811 ,  H01L23/49838 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13016 ,  H01L2224/13018 ,  H01L2224/13019 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1411 ,  H01L2224/16 ,  H01L2224/1601 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/17107 ,  H01L2224/27013 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/75 ,  H01L2224/75301 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81194 ,  H01L2224/81203 ,  H01L2224/81208 ,  H01L2224/81345 ,  H01L2224/81385 ,  H01L2224/81801 ,  H01L2224/83051 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83385 ,  H01L2224/83856 ,  H01L2224/93 ,  H01L2224/94 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15787 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/13109 ,  H01L2924/3512 ,  H01L2924/0665 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/81805

摘要： A semiconductor device has a semiconductor die with a plurality of composite bumps formed over a surface of the semiconductor die. The composite bumps have a fusible portion and non-fusible portion, such as a conductive pillar and bump formed over the conductive pillar. The composite bumps can also be tapered. Conductive traces are formed over a substrate with interconnect sites having edges parallel to the conductive trace from a plan view for increasing escape routing density. The interconnect site can have a width less than 1.2 times a width of the conductive trace. The composite bumps are wider than the interconnect sites. The fusible portion of the composite bumps is bonded to the interconnect sites so that the fusible portion covers a top surface and side surface of the interconnect sites. An encapsulant is deposited around the composite bumps between the semiconductor die and substrate.

摘要翻译： 半导体器件具有形成在半导体管芯的表面上的多个复合凸块的半导体管芯。 复合凸块具有可熔部分和不可熔部分，例如形成在导电柱上的导电柱和凸块。 复合凸块也可以是锥形的。 导电迹线形成在具有从平面图平行于导电迹线的边缘的互连位置的衬底上，以增加逃逸路由密度。 互连部位可以具有小于导电迹线宽度的1.2倍的宽度。 复合凸块比互连部位宽。 复合凸块的可熔部分结合到互连部位，使得可熔部分覆盖互连部位的顶表面和侧表面。 围绕半导体管芯和衬底之间的复合凸块沉积密封剂。

公开(公告)号：US20130277826A9

公开(公告)日：2013-10-24

申请号：US12960178

申请日：2010-12-03

申请人： Rajendra D. Pendse

发明人： Rajendra D. Pendse

IPC分类号： H01L23/485 ,  H01L21/3205

CPC分类号： H01L24/17 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/49811 ,  H01L23/49838 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13016 ,  H01L2224/13018 ,  H01L2224/13019 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1411 ,  H01L2224/16 ,  H01L2224/1601 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/17107 ,  H01L2224/27013 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/75 ,  H01L2224/75301 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81194 ,  H01L2224/81203 ,  H01L2224/81208 ,  H01L2224/81345 ,  H01L2224/81385 ,  H01L2224/81801 ,  H01L2224/83051 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83385 ,  H01L2224/83856 ,  H01L2224/93 ,  H01L2224/94 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15787 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/13109 ,  H01L2924/3512 ,  H01L2924/0665 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/81805

摘要： A semiconductor device has a semiconductor die with a plurality of composite bumps formed over a surface of the semiconductor die. The composite bumps have a fusible portion and non-fusible portion, such as a conductive pillar and bump formed over the conductive pillar. The composite bumps can also be tapered. Conductive traces are formed over a substrate with interconnect sites having edges parallel to the conductive trace from a plan view for increasing escape routing density. The interconnect site can have a width less than 1.2 times a width of the conductive trace. The composite bumps are wider than the interconnect sites. The fusible portion of the composite bumps is bonded to the interconnect sites so that the fusible portion covers a top surface and side surface of the interconnect sites. An encapsulant is deposited around the composite bumps between the semiconductor die and substrate.

摘要翻译： 半导体器件具有形成在半导体管芯的表面上的多个复合凸块的半导体管芯。 复合凸块具有可熔部分和不可熔部分，例如形成在导电柱上的导电柱和凸块。 复合凸块也可以是锥形的。 导电迹线形成在具有从平面图平行于导电迹线的边缘的互连位置的衬底上，以增加逃逸路由密度。 互连部位可以具有小于导电迹线宽度的1.2倍的宽度。 复合凸块比互连部位宽。 复合凸块的可熔部分结合到互连部位，使得可熔部分覆盖互连部位的顶表面和侧表面。 围绕半导体管芯和衬底之间的复合凸块沉积密封剂。

公开(公告)号：US08558361B2

公开(公告)日：2013-10-15

申请号：US12910231

申请日：2010-10-22

申请人： Yasuto Kawaguchi

发明人： Yasuto Kawaguchi

IPC分类号： H01L23/495

CPC分类号： H01L23/24 ,  H01L23/053 ,  H01L23/3121 ,  H01L23/3185 ,  H01L23/367 ,  H01L23/60 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L2224/27013 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32227 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/83951 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/07025 ,  H01L2924/00012

摘要： A power semiconductor module comprises: a heat dissipation plate; an insulating wiring board having an upper electrode and a lower electrode, the lower electrode joined to the heat dissipation plate via a first solder; a semiconductor chip joined to the upper electrode via a second solder; a first low-k dielectric film coating sides of the lower electrode and the first solder; a second low-k dielectric film coating sides of the semiconductor chip and the second solder; a case on the heat dissipation plate and surrounding the insulating wiring board and the semiconductor chip; and an insulator filled in the case and coating the insulating wiring board, the semiconductor chip, and the first and second low-k dielectric films.

摘要翻译： 功率半导体模块包括：散热板; 绝缘布线板，具有上电极和下电极，所述下电极经由第一焊料与所述散热板接合; 通过第二焊料与上电极接合的半导体芯片; 下电极和第一焊料的第一低k电介质膜涂层; 半导体芯片和第二焊料的第二低k电介质膜涂层; 在散热板上并围绕绝缘布线板和半导体芯片的情况; 以及填充在壳体中并且涂覆绝缘布线板，半导体芯片以及第一和第二低k电介质膜的绝缘体。

公开(公告)号：US08531025B2

公开(公告)日：2013-09-10

申请号：US11755019

申请日：2007-05-30

申请人： David L. Edwards ,  Sushumna Iruvanti ,  Hilton T. Toy ,  Wei Zou

发明人： David L. Edwards ,  Sushumna Iruvanti ,  Hilton T. Toy ,  Wei Zou

IPC分类号： H01L23/34

CPC分类号： H01L23/04 ,  H01L23/10 ,  H01L23/3675 ,  H01L23/42 ,  H01L24/32 ,  H01L2224/16225 ,  H01L2224/26175 ,  H01L2224/27013 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/83051 ,  H01L2224/83385 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/16152 ,  H01L2924/16153 ,  H01L2924/1616 ,  Y10S257/924

摘要： A semiconductor module structure and a method of forming the semiconductor module structure are disclosed. The structure incorporates a die mounted on a substrate and covered by a lid. A thermal compound is disposed within a thermal gap between the die and the lid. A barrier around the periphery of the die extends between the lid and the substrate, contains the thermal compound, and flexes in response to expansion and contraction of both the substrate and the lid during cycling of the semiconductor module. More particularly, either the barrier is formed of a flexible material or has a flexible connection to the substrate and/or to the lid. The barrier effectively contains the thermal compound between the die and the lid and, thereby, provides acceptable and controlled coverage of the thermal compound over the die for heat removal.

摘要翻译： 公开了半导体模块结构和形成半导体模块结构的方法。 该结构包括安装在基板上并被盖子覆盖的模具。 热化合物设置在模具和盖子之间的热间隙内。 围绕模具周边的屏障在盖和基板之间延伸，包含热化合物，并且在半导体模块循环期间响应于基板和盖的膨胀和收缩而弯曲。 更具体地，屏障由柔性材料形成或具有与基底和/或盖的柔性连接。 屏障有效地包含了模具和盖子之间的热化合物，从而提供可靠和可控的覆盖模具上的热化合物以进行散热。