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    Method for forming epitaxial wafer and method for fabricating semiconductor device
    1.
    发明授权
    Method for forming epitaxial wafer and method for fabricating semiconductor device 有权
    用于形成外延晶片的方法和用于制造半导体器件的方法

    公开(公告)号：US08679955B2

    公开(公告)日：2014-03-25

    申请号：US13202419

    申请日：2010-02-10

    申请人： Shin Hashimoto ,  Katsushi Akita ,  Kensaku Motoki ,  Hideaki Nakahata ,  Shinsuke Fujiwara

    发明人： Shin Hashimoto ,  Katsushi Akita ,  Kensaku Motoki ,  Hideaki Nakahata ,  Shinsuke Fujiwara

    IPC分类号： H01L21/20

    CPC分类号： H01L21/0262 ,  C30B25/02 ,  C30B29/16 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007

    摘要： A method for forming an epitaxial wafer is provided as one enabling growth of a gallium nitride based semiconductor with good crystal quality on a gallium oxide region. In step S107, an AlN buffer layer 13 is grown. In step S108, at a time t5, a source gas G1 containing hydrogen, trimethylaluminum, and ammonia, in addition to nitrogen, is supplied into a growth reactor 10 to grow the AlN buffer layer 13 on a primary surface 11a. The AlN buffer layer 13 is so called a low-temperature buffer layer. After a start of film formation of the buffer layer 13, in step S109 supply of hydrogen (H2) is started at a time t6. At the time t6, H2, N2, TMA, and NH3 are supplied into the growth reactor 10. A supply amount of hydrogen is increased between times t6 and t7, and at the time t7 the increase of hydrogen is terminated to supply a constant amount of hydrogen. At the time t7, H2, TMA, and NH3 are supplied into the growth reactor 10.

    摘要翻译： 提供了一种用于形成外延晶片的方法，其可以在氧化镓区域上使得能够以良好的晶体质量生长氮化镓基半导体。 在步骤S107中，生长AlN缓冲层13。 在步骤S108中，在时刻t5，将除了氮以外的氢，三甲基铝和氨的原料气G1供给到生长反应器10中，以在主面11a上生长AlN缓冲层13。 AlN缓冲层13被称为低温缓冲层。 在开始形成缓冲层13之后，在步骤S109中，在时刻t6开始供给氢（H2）。 在时间t6，H2，N2，TMA和NH3被供应到生长反应器10中。在时间t6和t7之间，氢的供应量增加，而在时间t7，氢的增加被终止以提供恒定的量 的氢。 在时间t7，将H2，TMA和NH3供应到生长反应器10中。

    METHOD FOR FABRICATING WAFER PRODUCT AND METHOD FOR FABRICATING GALLIUM NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE
    2.
    发明申请
    METHOD FOR FABRICATING WAFER PRODUCT AND METHOD FOR FABRICATING GALLIUM NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE 有权
    用于制造波形产品的方法和用于制造基于氮化镓的半导体光学器件的方法

    公开(公告)号：US20120070929A1

    公开(公告)日：2012-03-22

    申请号：US13318039

    申请日：2010-03-01

    申请人： Shin Hashimoto ,  Katsushi Akita ,  Kensaku Motoki ,  Shinsuke Fujiwara ,  Hideaki Nakahata

    发明人： Shin Hashimoto ,  Katsushi Akita ,  Kensaku Motoki ,  Shinsuke Fujiwara ,  Hideaki Nakahata

    IPC分类号： H01L33/36 ,  H01L21/20

    CPC分类号： C23C16/0227 ,  C23C16/0272 ,  C23C16/303 ,  C30B25/183 ,  C30B29/406 ,  H01L33/007

    摘要： Provided is a method for fabricating a wafer product including an active layer grown on a gallium oxide substrate and allowing an improvement in emission intensity. In step S105, a buffer layer 13 comprised of a Group III nitride such as GaN, AlGaN, or AlN is grown at 600 Celsius degrees on a primary surface 11a of a gallium oxide substrate 11. After the growth of the buffer layer 13, while supplying a gas G2, which contains hydrogen and nitrogen, into a growth reactor 10, the gallium oxide substrate 11 and the buffer layer 13 are exposed to an atmosphere in the growth reactor 11 at 1050 Celsius degrees. A Group III nitride semiconductor layer 15 is grown on the modified buffer layer. The modified buffer layer includes, for example, voids. The Group III nitride semiconductor layer 15 can be comprised of GaN and AlGaN. When the Group III nitride semiconductor layer 15 is formed of these materials, excellent crystal quality is obtained on the modified buffer layer 14.

    摘要翻译： 本发明提供一种制造晶片产品的方法，该晶片产品包括在氧化镓衬底上生长的有源层并且能够提高发光强度。 在步骤S105中，在氧化镓衬底11的主表面11a上以600摄氏度生长由诸如GaN，AlGaN或AlN的III族氮化物构成的缓冲层13.在缓冲层13生长之后，同时 将含有氢和氮的气体G2供给到生长反应器10中，将氧化镓衬底11和缓冲层13在生长反应器11中的气氛中以1050摄氏度暴露。 在改性缓冲层上生长III族氮化物半导体层15。 改性缓冲层包括例如空隙。 III族氮化物半导体层15可以由GaN和AlGaN构成。 当由这些材料形成III族氮化物半导体层15时，在改性缓冲层14上获得优异的晶体质量。

    Method for fabricating wafer product and method for fabricating gallium nitride based semiconductor optical device
    4.
    发明授权
    Method for fabricating wafer product and method for fabricating gallium nitride based semiconductor optical device 有权
    制造晶圆产品的方法和用于制造氮化镓基半导体光学器件的方法

    公开(公告)号：US08415180B2

    公开(公告)日：2013-04-09

    申请号：US13318039

    申请日：2010-03-01

    申请人： Shin Hashimoto ,  Katsushi Akita ,  Kensaku Motoki ,  Shinsuke Fujiwara ,  Hideaki Nakahata

    发明人： Shin Hashimoto ,  Katsushi Akita ,  Kensaku Motoki ,  Shinsuke Fujiwara ,  Hideaki Nakahata

    IPC分类号： H01L21/00

    CPC分类号： C23C16/0227 ,  C23C16/0272 ,  C23C16/303 ,  C30B25/183 ,  C30B29/406 ,  H01L33/007

    摘要： Provided is a method for fabricating a wafer product including an active layer grown on a gallium oxide substrate and allowing an improvement in emission intensity. In step S105, a buffer layer 13 comprised of a Group III nitride such as GaN, AlGaN, or AlN is grown at 600 Celsius degrees on a primary surface 11a of a gallium oxide substrate 11. After the growth of the buffer layer 13, while supplying a gas G2, which contains hydrogen and nitrogen, into a growth reactor 10, the gallium oxide substrate 11 and the buffer layer 13 are exposed to an atmosphere in the growth reactor 11 at 1050 Celsius degrees. A Group III nitride semiconductor layer 15 is grown on the modified buffer layer. The modified buffer layer includes, for example, voids. The Group III nitride semiconductor layer 15 can be comprised of GaN and AlGaN. When the Group III nitride semiconductor layer 15 is formed of these materials, excellent crystal quality is obtained on the modified buffer layer 14.

    摘要翻译： 本发明提供一种制造晶片产品的方法，该晶片产品包括在氧化镓衬底上生长的有源层并且能够提高发光强度。 在步骤S105中，在氧化镓衬底11的主表面11a上以600摄氏度生长由诸如GaN，AlGaN或AlN的III族氮化物构成的缓冲层13.在缓冲层13生长之后，同时 将含有氢和氮的气体G2供给到生长反应器10中，将氧化镓衬底11和缓冲层13在生长反应器11中的气氛中以1050摄氏度暴露。 在改性缓冲层上生长III族氮化物半导体层15。 改性缓冲层包括例如空隙。 III族氮化物半导体层15可以由GaN和AlGaN构成。 当由这些材料形成III族氮化物半导体层15时，在改性缓冲层14上获得优异的晶体质量。

    METHOD FOR FORMING EPITAXIAL WAFER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
    5.
    发明申请
    METHOD FOR FORMING EPITAXIAL WAFER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权
    用于形成外延晶体的方法和用于制造半导体器件的方法

    公开(公告)号：US20120003770A1

    公开(公告)日：2012-01-05

    申请号：US13202419

    申请日：2010-02-10

    申请人： Shin Hashimoto ,  Katsushi Akita ,  Kensaku Motoki ,  Hideaki Nakahata ,  Shinsuke Fujiwara

    发明人： Shin Hashimoto ,  Katsushi Akita ,  Kensaku Motoki ,  Hideaki Nakahata ,  Shinsuke Fujiwara

    IPC分类号： H01L21/20 ,  H01L33/32 ,  B82Y40/00

    CPC分类号： H01L21/0262 ,  C30B25/02 ,  C30B29/16 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007

    摘要： A method for forming an epitaxial wafer is provided as one enabling growth of a gallium nitride based semiconductor with good crystal quality on a gallium oxide region. In step S107, an AlN buffer layer 13 is grown. In step S108, at a time t5, a source gas G1 containing hydrogen, trimethylaluminum, and ammonia, in addition to nitrogen, is supplied into a growth reactor 10 to grow the AlN buffer layer 13 on a primary surface 11a. The AlN buffer layer 13 is so called a low-temperature buffer layer. After a start of film formation of the buffer layer 13, in step S109 supply of hydrogen (H2) is started at a time t6. At the time t6, H2, N2, TMA, and NH3 are supplied into the growth reactor 10. A supply amount of hydrogen is increased between times t6 and t7, and at the time t7 the increase of hydrogen is terminated to supply a constant amount of hydrogen. At the time t7, H2, TMA, and NH3 are supplied into the growth reactor 10.

    摘要翻译： 提供了一种用于形成外延晶片的方法，其可以在氧化镓区域上使得能够以良好的晶体质量生长氮化镓基半导体。 在步骤S107中，生长AlN缓冲层13。 在步骤S108中，在时刻t5，将除了氮以外的氢，三甲基铝和氨的原料气G1供给到生长反应器10中，以在主面11a上生长AlN缓冲层13。 AlN缓冲层13被称为低温缓冲层。 在开始形成缓冲层13之后，在步骤S109中，在时刻t6开始供给氢（H2）。 在时间t6，H2，N2，TMA和NH3被供应到生长反应器10中。在时间t6和t7之间，氢的供应量增加，而在时间t7，氢的增加被终止以提供恒定的量 的氢。 在时间t7，将H2，TMA和NH3供应到生长反应器10中。

    EPITAXIAL WAFER, METHOD FOR MANUFACTURING GALLIUM NITRIDE SEMICONDUCTOR DEVICE, GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND GALLIUM OXIDE WAFER
    6.
    发明申请
    EPITAXIAL WAFER, METHOD FOR MANUFACTURING GALLIUM NITRIDE SEMICONDUCTOR DEVICE, GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND GALLIUM OXIDE WAFER 失效
    外延膜，制造氮化镓半导体器件的方法，氮化镓半导体器件和氧化铝膜

    公开(公告)号：US20110315998A1

    公开(公告)日：2011-12-29

    申请号：US13148543

    申请日：2010-02-04

    申请人： Shin Hashimoto ,  Katsushi Akita ,  Shinsuke Fujiwara ,  Hideaki Nakahata ,  Kensaku Motoki

    发明人： Shin Hashimoto ,  Katsushi Akita ,  Shinsuke Fujiwara ,  Hideaki Nakahata ,  Kensaku Motoki

    IPC分类号： H01L29/20 ,  C01G15/00 ,  H01L21/20

    CPC分类号： H01L21/0242 ,  C30B25/18 ,  C30B29/16 ,  C30B29/403 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L33/007 ,  H01L33/16

    摘要： A gallium nitride based semiconductor device is provided which includes a gallium nitride based semiconductor film with a flat c-plane surface provided on a gallium oxide wafer. A light emitting diode LED includes a gallium oxide support base 32 having a primary surface 32a of monoclinic gallium oxide, and a laminate structure 33 of Group III nitride. A semiconductor mesa of the laminate structure 33 includes a low-temperature GaN buffer layer 35, an n-type GaN layer 37, an active layer 39 of a quantum well structure, and a p-type gallium nitride based semiconductor layer 37. The p-type gallium nitride based semiconductor layer 37 includes, for example, a p-type AlGaN electron block layer and a p-type GaN contact layer. The primary surface 32a of the gallium oxide support base 32 is inclined at an angle of not less than 2 degrees and not more than 4 degrees relative to a (100) plane of monoclinic gallium oxide. Owing to this inclination, the gallium nitride based semiconductor epitaxially grown on the primary surface 32a of the gallium oxide support base has a flat surface.

    摘要翻译： 提供了一种氮化镓基半导体器件，其包括在氧化镓晶片上设置有平坦c面的氮化镓基半导体膜。 发光二极管LED包括具有单斜氧化镓的主表面32a的氧化镓载体基底32和III族氮化物的叠层结构33。 层压结构33的半导体台面包括低温GaN缓冲层35，n型GaN层37，量子阱结构的有源层39和p型氮化镓基半导体层37. p 型氮化镓系半导体层37例如包括p型AlGaN电子阻挡层和p型GaN接触层。 氧化镓载体基体32的主表面32a相对于单斜晶系氧化镓的（100）面倾斜2度以上4度以下。 由于该倾斜，在氧化镓载体基体的主表面32a上外延生长的氮化镓基半导体具有平坦的表面。

    GROUP III NITRIDE LAMINATED SEMICONDUCTOR WAFER AND GROUP III NITRIDE SEMICONDUCTOR DEVICE
    8.
    发明申请
    GROUP III NITRIDE LAMINATED SEMICONDUCTOR WAFER AND GROUP III NITRIDE SEMICONDUCTOR DEVICE 审中-公开
    第III组氮化物层叠半导体晶体管和III族氮化物半导体器件

    公开(公告)号：US20120211801A1

    公开(公告)日：2012-08-23

    申请号：US13392998

    申请日：2010-08-23

    申请人： Shin Hashimoto ,  Katsushi Akita ,  Hideaki Nakahata ,  Hiroshi Amano

    发明人： Shin Hashimoto ,  Katsushi Akita ,  Hideaki Nakahata ,  Hiroshi Amano

    IPC分类号： H01L29/778 ,  H01L29/205

    CPC分类号： H01L29/7785 ,  H01L29/2003

    摘要： There is provided a normally-off group III nitride semiconductor device having a high breakdown field strength and minimal crystal defects, and a group III nitride laminated semiconductor wafer used to make the group III nitride semiconductor device. The group III nitride laminated semiconductor wafer 10 includes a substrate 27 which is made of AlN and has a main surface 27a along the c-axis of the AlN crystal, a first AlX1InY1Ga1-X1-Y1N layer 13 which is made of a group III nitride-based semiconductor containing Al and is provided on the main surface 27a, and a second AlX2InY2Ga1-X2-Y2N layer 15 which is provided on the main surface 27a, is made of a group III nitride-based semiconductor having a larger bandgap than the first AlX1InY1Ga1-X1-Y1N layer 13, and forms a heterojunction with the first AlX1InY1Ga1-X1-Y1N layer 13.

    摘要翻译： 提供了具有高击穿场强度和最小晶体缺陷的常规III族氮化物半导体器件，以及用于制造III族氮化物半导体器件的III族氮化物层压半导体晶片。 III族氮化物层叠半导体晶片10包括由AlN制成并具有沿AlN晶体的c轴的主表面27a的基板27，由III族氮化物制成的第一AlX1InY1Ga1-X1-Y1N层13 包含Al并且设置在主表面27a上，并且设置在主表面27a上的第二AlX2InY2Ga1-X2-Y2N层15由具有比第一个更大的带隙的III族氮化物基半导体制成 AlX1InY1Ga1-X1-Y1N层13，与第一AlX1InY1Ga1-X1-Y1N层13形成异质结。