CERAMICS FOR PLASMA TREATMENT APPARATUS
    7.
    发明申请
    CERAMICS FOR PLASMA TREATMENT APPARATUS 审中-公开
    等离子体处理设备的陶瓷

    公开(公告)号:US20100069227A1

    公开(公告)日:2010-03-18

    申请号:US12557656

    申请日:2009-09-11

    Abstract: The present invention provides ceramics for a plasma-treatment apparatus which are excellent in corrosion resistance against a halogen-type corrosive gas, plasma, etc., attain reduction in resistance, and inhibit impurity metal contamination caused by composition materials of these ceramics even in a halogen plasma process, and which can be used suitably for the component of the plasma-treatment apparatus for manufacturing a semiconductor, a liquid crystal, etc. The ceramics are used which are prepared in such a way that 3% by weight to 30% by weight of a cerium oxide relative to yttria and 3% by weight to 50% by weight of niobium pentoxide relative to yttria are added to yttria, which are fired in a reducing atmosphere to have an open porosity of 1.0% or less.

    Abstract translation: 本发明提供了一种用于等离子体处理装置的陶瓷,其对于卤素型腐蚀性气体,等离子体等的耐腐蚀性优异,电阻降低,并且抑制由这些陶瓷的组成材料引起的杂质金属污染,即使在 卤素等离子体工艺,其可以适用于半导体制造用等离子体处理装置的部件,液晶等。使用这样的陶瓷,其制造方法为将3重量%〜30重量% 将氧化钇相对于氧化钇的重量和相对于氧化钇的3重量%〜50重量%的五氧化二铌添加到氧化钇中,氧化钇在还原气氛中烧成,开放孔隙率为1.0%以下。

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