公开(公告)号：US20150114429A1

公开(公告)日：2015-04-30

申请号：US14401739

申请日：2013-05-17

申请人： Shrane Ning Jenq ,  Karl E. Boggs ,  Jun Liu ,  Nicole Thomas

发明人： Shrane Ning Jenq ,  Karl E. Boggs ,  Jun Liu ,  Nicole Thomas

IPC分类号： C11D11/00 ,  C11D7/32 ,  C25D5/48

CPC分类号： C11D11/0047 ,  C11D3/0073 ,  C11D7/08 ,  C11D7/267 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3245 ,  C11D7/3281 ,  C25D5/48 ,  H01L21/02074

摘要： A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one corrosion inhibitor, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers.

摘要翻译： 一种清洁组合物和用于从具有所述残余物和污染物的微电子装置清洁后化学机械抛光（CMP）残留物和污染物的清洁组合物和方法。 清洁组合物包括至少一种季碱，至少一种胺，至少一种腐蚀抑制剂和至少一种溶剂。 该组合物可与微电子器件的表面高效地清洗后CMP残留物和污染物质，同时与阻挡层相容。

公开(公告)号：US20070128857A1

公开(公告)日：2007-06-07

申请号：US11446205

申请日：2006-06-05

申请人： Shrane-Ning Jenq ,  Hung-Wei Li ,  Min-Sheng Chu ,  Chi-Chao Wan ,  Yung-Yun Wang ,  Po-Tsun Liu

发明人： Shrane-Ning Jenq ,  Hung-Wei Li ,  Min-Sheng Chu ,  Chi-Chao Wan ,  Yung-Yun Wang ,  Po-Tsun Liu

IPC分类号： H01L21/4763

CPC分类号： H01L21/2885 ,  C23C18/1605 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/38 ,  C25D3/38 ,  C25D5/022 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1292

摘要： A method for manufacturing copper wires on a substrate for a flat panel display device is disclosed. The method comprises following steps: providing a substrate; forming a seed layer on the surface; forming a patterned photoresist on the surface of the seed layer to expose a part of the seed layer; and plating a copper layer on the exposed part of the seed layer. As the copper layer is plated, an electrolyte solution comprises a sulfur-containing compound is used. The angle between the surface of the copper layer and the contact surface of the seed layer is greater than 0 degree and less than 90 degree. Through the method illustrated above, the film step-coverage in the following process can be improved, the generated voids in device can be reduced, the manufacturing steps can be simplified, and the complicated etching process can be avoided.

摘要翻译： 公开了一种在平板显示装置用基板上制造铜线的方法。 该方法包括以下步骤：提供衬底; 在表面上形成种子层; 在所述种子层的表面上形成图案化的光致抗蚀剂以暴露所述种子层的一部分; 并在种子层的暴露部分上镀覆铜层。 当铜层被镀覆时，使用包含含硫化合物的电解质溶液。 铜层的表面与种子层的接触面之间的角度大于0度且小于90度。 通过上述方法，可以改善以下工序中的膜阶梯覆盖，可以减少器件中产生的空隙，可以简化制造步骤，可以避免复杂的蚀刻工艺。

公开(公告)号：US07393786B2

公开(公告)日：2008-07-01

申请号：US11446205

申请日：2006-06-05

申请人： Shrane-Ning Jenq ,  Hung-Wei Li ,  Min-Sheng Chu ,  Chi-Chao Wan ,  Yung-Yun Wang ,  Po-Tsun Liu

发明人： Shrane-Ning Jenq ,  Hung-Wei Li ,  Min-Sheng Chu ,  Chi-Chao Wan ,  Yung-Yun Wang ,  Po-Tsun Liu

IPC分类号： H01L21/44

CPC分类号： H01L21/2885 ,  C23C18/1605 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/38 ,  C25D3/38 ,  C25D5/022 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1292

摘要： A method for manufacturing copper wires on a substrate for a flat panel display device is disclosed. The method comprises following steps: providing a substrate; forming a seed layer on the surface; forming a patterned photoresist on the surface of the seed layer to expose a part of the seed layer; and plating a copper layer on the exposed part of the seed layer. As the copper layer is plated, an electrolyte solution comprises a sulfur-containing compound is used. The angle between the surface of the copper layer and the contact surface of the seed layer is greater than 0 degree and less than 90 degree. Through the method illustrated above, the film step-coverage in the following process can be improved, the generated voids in device can be reduced, the manufacturing steps can be simplified, and the complicated etching process can be avoided.

摘要翻译： 公开了一种在平板显示装置用基板上制造铜线的方法。 该方法包括以下步骤：提供衬底; 在表面上形成种子层; 在所述种子层的表面上形成图案化的光致抗蚀剂以暴露所述种子层的一部分; 并在种子层的暴露部分上镀覆铜层。 当铜层被镀覆时，使用包含含硫化合物的电解质溶液。 铜层的表面与种子层的接触面之间的角度大于0度且小于90度。 通过上述方法，可以改善以下工序中的膜阶梯覆盖，可以减少器件中产生的空隙，可以简化制造步骤，可以避免复杂的蚀刻工艺。

公开(公告)号：US10988718B2

公开(公告)日：2021-04-27

申请号：US16308053

申请日：2017-03-09

申请人： ENTEGRIS, INC. ,  Thomas Parson ,  Shrane-Ning Jenq ,  Steven Medd ,  Daniela White ,  Michael White ,  Donald Frye

发明人： Thomas Parson ,  Shrane-Ning Jenq ,  Steven Medd ,  Daniela White ,  Michael White ,  Donald Frye

IPC分类号： C11D7/32 ,  C11D11/00 ,  C11D3/20 ,  C11D3/37 ,  H01L21/02 ,  C11D1/08 ,  C11D1/00 ,  C23F1/26 ,  C23F1/28 ,  B08B3/08 ,  C11D3/04 ,  C11D3/30 ,  C11D3/32 ,  C11D3/33

摘要： A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one at least one organic additive; at least one metal chelating agent; and at least one polyelectrolyte. The composition achieves highly efficacious removal of the particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, and metal containing layers such as tungsten-containing layers.