公开(公告)号：US20130330910A1

公开(公告)日：2013-12-12

申请号：US13876199

申请日：2011-09-21

申请人： Shumpei Tanaka ,  Takeshi Matsumura

发明人： Shumpei Tanaka ,  Takeshi Matsumura

IPC分类号： H01L21/78

CPC分类号： H01L21/78 ,  H01L21/6836 ,  H01L23/3121 ,  H01L24/27 ,  H01L24/45 ,  H01L24/48 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/85207 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3025 ,  Y10T428/24331 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The present invention provides a dicing die bond film in which yielding and breaking of the dicing film are prevented and in which the die bond film can be suitably broken with a tensile force. In the dicing die bond film of the present invention, the tensile strength of the contact part in which the outer circumference of the push-up jig contacts the dicing film at 25° C. is 15 N or more and 80 N or less and the yield point elongation is 80% or more, the tensile strength of the wafer bonding part of the dicing film at 25° C. is 10 N or more and 70 N or less and the yield point elongation is 30% or more, [(the tensile strength of the contact part)−(the tensile strength of the wafer bonding part)] is 0 N or more and 60 N or less, and the breaking elongation rate of the die bond film at 25° C. is more than 40% and 500% or less.

摘要翻译： 本发明提供了一种切割芯片接合膜，其中可以防止切割膜的屈服和断裂，并且其中模具接合膜可以用拉力适当地断裂。 在本发明的切割模片接合薄膜中，上推夹具的外周在25℃下与切割薄膜接触的接触部的拉伸强度为15N以上且80N以下， 屈服点伸长率为80％以上时，切割膜的晶片接合部在25℃下的拉伸强度为10N以上且70N以下，屈服点伸长率为30％以上，[（ 接触部的拉伸强度） - （晶片接合部的拉伸强度）]为0N以上且60N以下，并且在25℃下的模片接合膜的断裂伸长率大于40％ 和500％以下。

公开(公告)号：US20110256666A1

公开(公告)日：2011-10-20

申请号：US13087617

申请日：2011-04-15

申请人： Yuki SUGO ,  Shumpei TANAKA ,  Kouichi INOUE

发明人： Yuki SUGO ,  Shumpei TANAKA ,  Kouichi INOUE

IPC分类号： H01L21/50 ,  B32B7/12

CPC分类号： H01L24/83 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/6836 ,  H01L24/27 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2221/68336 ,  H01L2221/68359 ,  H01L2224/27436 ,  H01L2224/29 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83855 ,  H01L2224/85207 ,  H01L2224/92247 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/0106 ,  H01L2924/01072 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/3025 ,  Y10T428/28 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/0532 ,  H01L2924/05432 ,  H01L2924/05032 ,  H01L2924/0503 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： The present invention provides a thermosetting type die bond film that can be preferably broken by tensile force. It is a thermosetting type die bond film used for a method of obtaining a semiconductor element from a semiconductor wafer by forming a reforming region by irradiating the semiconductor wafer with a laser beam and then breaking the semiconductor wafer in the reforming region or a method of obtaining a semiconductor element from a semiconductor wafer by forming grooves that do not reach the backside of the semiconductor wafer on a surface thereof and then exposing the grooves from the backside by grinding the backside of the semiconductor wafer, wherein the elongation rate at break at 25° C. before thermal curing is larger than 40% and 500% or less.

摘要翻译： 本发明提供一种可以优选地通过拉伸力断裂的热固型型模接合膜。 用于通过用激光束照射半导体晶片，然后在重整区域中破坏半导体晶片，通过形成重整区域，从半导体晶片获得半导体元件的方法中使用的热固型型芯片接合膜或获得半导体元件的方法 半导体晶片的半导体元件，通过在其表面上形成不到达半导体晶片的背面的槽，然后通过研磨半导体晶片的背面，从背面露出槽，其中在25°的断裂伸长率 热固化前大于40％和500％以下。

公开(公告)号：US20110189835A1

公开(公告)日：2011-08-04

申请号：US13017218

申请日：2011-01-31

申请人： Yuki Sugo ,  Shumpei Tanaka ,  Takeshi Matsumura ,  Yasushi Inoue

发明人： Yuki Sugo ,  Shumpei Tanaka ,  Takeshi Matsumura ,  Yasushi Inoue

IPC分类号： H01L21/78 ,  B32B7/12

CPC分类号： B32B7/12 ,  H01L21/6836 ,  H01L21/78 ,  Y10T428/263 ,  Y10T428/2809

摘要： There is provided a new film for manufacturing a semiconductor device that is superior to prevent contamination of a semiconductor chip having an excellent balance of holding power during dicing a semiconductor wafer even where the semiconductor wafer is thin, peeling property when peeling the semiconductor chip that is obtained by dicing together with its adhesive layer, and low contamination property in which there is no attachment of cutting debris to the semiconductor chip. A film for manufacturing a semiconductor device that is used when manufacturing a semiconductor device has a base layer, a first pressure-sensitive adhesive layer that is provided on the base layer, a radiation curing-type second pressure-sensitive adhesive layer that is provided on the first pressure-sensitive adhesive layer and cured by radiation irradiation in advance, and an adhesive layer that is provided on the second pressure-sensitive adhesive layer.

摘要翻译： 提供了一种用于制造半导体器件的新膜，即使在半导体晶片较薄时也能够防止在半导体晶片切割期间具有优异的保持平衡的半导体芯片的污染，并且剥离半导体芯片时的剥离性 通过与其粘合剂层一起切割获得的低污染特性，其中没有将切屑附着到半导体芯片。 制造半导体器件时使用的半导体器件用薄膜，具有基底层，设置在基底层上的第一粘合剂层，设置在基底层上的辐射固化型第二压敏粘合剂层 预先通过辐射照射固化的第一粘合剂层和设置在第二压敏粘合剂层上的粘合剂层。

公开(公告)号：US09142457B2

公开(公告)日：2015-09-22

申请号：US13876199

申请日：2011-09-21

申请人： Shumpei Tanaka ,  Takeshi Matsumura

发明人： Shumpei Tanaka ,  Takeshi Matsumura

IPC分类号： H01L21/78 ,  H01L21/683 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L21/78 ,  H01L21/6836 ,  H01L23/3121 ,  H01L24/27 ,  H01L24/45 ,  H01L24/48 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/85207 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3025 ,  Y10T428/24331 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The present invention provides a dicing die bond film in which yielding and breaking of the dicing film are prevented and in which the die bond film can be suitably broken with a tensile force. In the dicing die bond film of the present invention, the tensile strength of the contact part in which the outer circumference of the push-up jig contacts the dicing film at 25° C. is 15 N or more and 80 N or less and the yield point elongation is 80% or more, the tensile strength of the wafer bonding part of the dicing film at 25° C. is 10 N or more and 70 N or less and the yield point elongation is 30% or more, [(the tensile strength of the contact part)−(the tensile strength of the wafer bonding part)] is 0 N or more and 60 N or less, and the breaking elongation rate of the die bond film at 25° C. is more than 40% and 500% or less.

摘要翻译： 本发明提供了一种切割芯片接合膜，其中可以防止切割膜的屈服和断裂，并且其中模具接合膜可以用拉力适当地断裂。 在本发明的切割模片接合薄膜中，上推夹具的外周在25℃下与切割薄膜接触的接触部的拉伸强度为15N以上且80N以下， 屈服点伸长率为80％以上时，切割膜的晶片接合部在25℃下的拉伸强度为10N以上且70N以下，屈服点伸长率为30％以上，[（ 接触部的拉伸强度） - （晶片接合部的拉伸强度）]为0N以上且60N以下，并且在25℃下的模片接合膜的断裂伸长率大于40％ 和500％以下。

公开(公告)号：US20110057331A1

公开(公告)日：2011-03-10

申请号：US12875383

申请日：2010-09-03

申请人： Miki Hayashi ,  Shumpei Tanaka ,  Kenji Oonishi ,  Yuuichirou Shishido ,  Kouichi Inoue

发明人： Miki Hayashi ,  Shumpei Tanaka ,  Kenji Oonishi ,  Yuuichirou Shishido ,  Kouichi Inoue

IPC分类号： H01L23/52

CPC分类号： H01L21/6836 ,  C09J7/22 ,  C09J7/38 ,  C09J2203/326 ,  C09J2433/00 ,  C09J2461/00 ,  C09J2463/00 ,  H01L24/45 ,  H01L24/73 ,  H01L2221/68336 ,  H01L2221/68381 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/85207 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/00014

摘要： An object of the present invention is to provide a thermosetting die-bonding film with which a die-bonding film is suitably broken with a tensile force. The object is achieved by a thermosetting die-bonding, film at least having an adhesive layer that is used to fix a semiconductor chip to an adherend, in which the breaking energy per unit area is 1 J/mm2 or less and the elongation at break is 40% or more to 500% or less at room temperature before thermal setting.

摘要翻译： 本发明的一个目的是提供一种热塑性芯片接合薄膜，通过该热固性芯片接合薄膜，该拉伸粘合薄膜被适当地断裂。 该目的通过热固性芯片接合来实现，其中至少具有用于将半导体芯片固定到被粘物上的粘合剂层，其中每单位面积的断裂能为1J / mm 2或更小，断裂伸长率 在热固化之前的室温下为40％以上至500％以下。