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公开(公告)号:US12080637B2
公开(公告)日:2024-09-03
申请号:US17725627
申请日:2022-04-21
Applicant: Dai Nippon Printing Co., Ltd.
Inventor: Satoru Kuramochi , Sumio Koiwa , Hidenori Yoshioka
IPC: H01L23/498 , H01L23/48 , H01L25/065 , H01L25/18 , H05K1/11 , H05K3/28 , H05K3/44 , H01L23/00 , H01L23/13 , H01L23/15
CPC classification number: H01L23/49827 , H01L23/481 , H01L23/49894 , H01L25/065 , H01L25/18 , H05K1/115 , H05K3/28 , H05K3/445 , H01L23/13 , H01L23/15 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L2224/0401 , H01L2224/04042 , H01L2224/13109 , H01L2224/13144 , H01L2224/13147 , H01L2224/16145 , H01L2224/16146 , H01L2224/16165 , H01L2224/16227 , H01L2224/2919 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73257 , H01L2224/81805 , H01L2224/8385 , H01L2225/0651 , H01L2225/06517 , H01L2225/06572 , H01L2924/14 , H01L2924/1432 , H01L2924/1434 , H01L2924/1461 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/381 , H05K2201/09154 , H05K2201/09563 , H05K2201/09581 , H05K2201/0959 , H05K2201/09854 , H05K2203/0594 , H01L2224/48091 , H01L2924/00014 , H01L2924/15788 , H01L2924/00014 , H01L2924/15787 , H01L2924/05432 , H01L2924/1579 , H01L2924/00014 , H01L2224/13109 , H01L2924/00014 , H01L2224/13147 , H01L2924/00014 , H01L2224/13144 , H01L2924/00014 , H01L2224/81805 , H01L2924/00014 , H01L2224/8385 , H01L2924/00014 , H01L2224/2919 , H01L2924/0665 , H01L2224/2919 , H01L2924/07025
Abstract: A through-hole electrode substrate includes a substrate including a through-hole extending from a first aperture of a first surface to a second aperture of a second surface, an area of the second aperture being larger than that of the first aperture, the through-hole having a minimum aperture part between the first aperture and the second aperture, wherein an area of the minimum aperture part in a planer view is smallest among a plurality of areas of the through-hole in a planer view, a filler arranged within the through-hole, and at least one gas discharge member contacting the filler exposed to one of the first surface and the second surface.
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公开(公告)号:US11923335B2
公开(公告)日:2024-03-05
申请号:US17472883
申请日:2021-09-13
Applicant: DEXERIALS CORPORATION
Inventor: Seiichiro Shinohara
CPC classification number: H01L24/83 , C09J7/20 , C09J9/02 , H01L24/27 , H01L24/29 , H01L24/73 , H01L24/81 , H01L24/92 , C08K3/08 , C08K2201/001 , C09J2203/326 , C09J2301/314 , C09J2301/408 , C09J2463/00 , C09J2467/006 , H01L24/13 , H01L24/16 , H01L2224/13144 , H01L2224/271 , H01L2224/2929 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29357 , H01L2224/29364 , H01L2224/29387 , H01L2224/2939 , H01L2224/294 , H01L2224/29499 , H01L2224/73204 , H01L2224/81903 , H01L2224/83101 , H01L2224/83203 , H01L2224/83851 , H01L2224/9211 , H05K3/323 , H01L2224/29355 , H01L2924/00014 , H01L2224/29357 , H01L2924/00014 , H01L2224/29339 , H01L2924/00014 , H01L2224/29347 , H01L2924/00014 , H01L2224/29344 , H01L2924/00014 , H01L2224/29364 , H01L2924/00014 , H01L2224/294 , H01L2924/00014 , H01L2224/2939 , H01L2924/00014 , H01L2224/2929 , H01L2924/0635 , H01L2224/2929 , H01L2924/0665 , H01L2224/29387 , H01L2924/05442 , H01L2224/29387 , H01L2924/05432 , H01L2224/29387 , H01L2924/05432 , H01L2924/01001 , H01L2224/271 , H01L2924/00012 , H01L2224/83203 , H01L2924/00012 , H01L2224/83101 , H01L2924/00012 , H01L2224/13144 , H01L2924/00014 , H01L2224/9211 , H01L2224/81 , H01L2224/83
Abstract: Anisotropic conductive films, each including an insulating adhesive layer and conductive particles insulating adhesive layer in a lattice-like manner. Among center distances between an arbitrary conductive particle and conductive particles adjacent to the conductive particle, the shortest distance to the conductive particle is a first center distance; the next shortest distance is a second center distance. These center distances are 1.5 to 5 times the conductive particles' diameter. The arbitrary conductive particle, conductive particle spaced apart from the conductive particle by the first center distance, conductive particle spaced apart from the conductive particle by first center distance or second center distance form an acute triangle. Regarding this acute triangle, an acute angle formed between a straight line orthogonal to a first array direction passing through the conductive particles and second array direction passing through conductive particles being 18 to 35°. These anisotropic conductive films have stable connection reliability in COG connection.
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公开(公告)号:US11798863B2
公开(公告)日:2023-10-24
申请号:US16770186
申请日:2018-12-07
Applicant: SEKISUI CHEMICAL CO., LTD.
Inventor: Kouji Ashiba , Keigo Oowashi , Aki Koukami , Rui Zhang
IPC: B32B15/08 , B32B27/20 , B32B15/092 , H01L23/373 , B32B3/10 , H01L21/48 , H01L23/00
CPC classification number: H01L23/3735 , B32B3/10 , B32B15/08 , B32B15/092 , B32B27/20 , H01L21/4882 , H01L24/73 , B32B2264/10 , B32B2264/102 , B32B2264/107 , B32B2307/206 , B32B2307/304 , B32B2457/00 , H01L2224/32225 , H01L2224/73265 , H01L2924/0503 , H01L2924/05032 , H01L2924/0532 , H01L2924/05432 , H01L2924/15787 , H01L2924/15798
Abstract: The problem to be solved by the invention is to provide a laminate capable of effectively enhancing thermal conductivity and adhesiveness, in spite of the relatively large thickness of a patterned metal layer. The laminate (1) according to the present invention includes a metal substrate (4), an insulating layer (2) laminated on one surface of the metal substrate (4), and a patterned metal layer (3) laminated on the surface of the insulating layer (2) on the side opposite to the metal substrate (4), the metal layer (3) is 300 μm or more in thickness, and the insulating layer (2) includes boron nitride (12) and an inorganic filler (13) other than boron nitride.
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公开(公告)号:US20180200840A1
公开(公告)日:2018-07-19
申请号:US15746536
申请日:2016-07-19
Applicant: Northeastem University , University of North Florida
Inventor: Stephen Peter Stagon , Hanchen Huang , Paul Robert Elliott
CPC classification number: B23K35/264 , B23K35/02 , B23K35/0227 , B23K35/0261 , B23K35/26 , B23K2101/40 , B23K2101/42 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/0345 , H01L2224/03462 , H01L2224/04026 , H01L2224/05082 , H01L2224/05124 , H01L2224/05144 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05171 , H01L2224/05178 , H01L2224/05181 , H01L2224/05184 , H01L2224/05186 , H01L2224/05583 , H01L2224/05618 , H01L2224/05624 , H01L2224/05639 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/27418 , H01L2224/27444 , H01L2224/2745 , H01L2224/27452 , H01L2224/2782 , H01L2224/29005 , H01L2224/29109 , H01L2224/29111 , H01L2224/29116 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/2919 , H01L2224/29205 , H01L2224/29209 , H01L2224/29211 , H01L2224/29213 , H01L2224/2929 , H01L2224/29299 , H01L2224/293 , H01L2224/29309 , H01L2224/29311 , H01L2224/29313 , H01L2224/29316 , H01L2224/29318 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/3201 , H01L2224/32012 , H01L2224/32501 , H01L2224/32506 , H01L2224/83099 , H01L2224/83193 , H01L2224/83203 , H01L2224/83805 , H01L2224/8385 , H01L2924/01014 , H01L2924/01322 , H01L2924/00014 , H01L2924/05341 , H01L2924/05432 , H01L2924/05442 , H01L2924/00012 , H01L2924/0102
Abstract: Bonded surfaces are formed by adhering first nanorods and second nanorods to respective first and second surfaces. The first shell is formed on the first nanorods and the second shell is formed on the second nanorods, wherein at least one of the first nanorods and second nanorods, and the first shell and the second shell are formed of distinct metals. The surfaces are then exposed to at least one condition that causes the distinct metals to form an alloy, such as eutectic alloy having a melting point below the temperature at which the alloy is formed, thereby bonding the surfaces upon which solidification of the alloy.
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公开(公告)号:US20180191328A1
公开(公告)日:2018-07-05
申请号:US15789629
申请日:2017-10-20
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor: Yeong Gyu LEE , Sung Won IM , Dong Woon CHANG , Hyung Goo BAEK
IPC: H03H9/05 , H03H9/02 , H03H9/54 , H03H9/10 , H03H9/17 , H03H3/04 , H01L23/00 , H01L41/047 , H01L41/29
CPC classification number: H03H9/0514 , H01L24/03 , H01L24/05 , H01L41/0475 , H01L41/29 , H01L2224/02206 , H01L2224/02215 , H01L2224/03424 , H01L2224/03464 , H01L2224/05144 , H01L2224/05147 , H01L2224/05564 , H01L2224/05582 , H01L2224/05644 , H01L2224/05655 , H01L2924/05042 , H01L2924/05432 , H01L2924/05442 , H01L2924/35121 , H03H3/02 , H03H3/04 , H03H9/0211 , H03H9/02133 , H03H9/1014 , H03H9/105 , H03H9/173 , H03H9/174 , H03H9/547 , H03H2003/021 , H03H2003/023
Abstract: An acoustic wave resonator includes: a substrate; a resonating portion formed on a first surface of the substrate; a metal pad connected to the resonating portion through a via hole formed in the substrate; and a protective layer disposed on a second surface of the substrate and including a plurality of layers, wherein the plurality of layers includes an internal protective layer directly in contact with the second surface of the substrate and formed of an insulating material including an adhesion that is stronger than an adhesion of other layers, among the plurality of layers.
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公开(公告)号:US09960107B2
公开(公告)日:2018-05-01
申请号:US15385062
申请日:2016-12-20
Applicant: Samsung Electronics Co., Ltd.
Inventor: Soojae Park , Kyujin Lee
IPC: H01L23/498 , H01L21/48 , H01L23/00
CPC classification number: H01L23/49838 , H01L21/4857 , H01L21/486 , H01L23/49822 , H01L23/49827 , H01L23/49866 , H01L23/49894 , H01L24/48 , H01L2224/05599 , H01L2224/32225 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48106 , H01L2224/48227 , H01L2224/48624 , H01L2224/48824 , H01L2224/73265 , H01L2224/85423 , H01L2924/00014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/04941 , H01L2924/04953 , H01L2924/05432 , H01L2924/15724 , H01L2924/15747 , H01L2924/00 , H01L2924/00012
Abstract: A package substrate including an insulating layer having a top surface and a bottom surface opposite to the top surface, at least one first copper pattern disposed in the insulating layer and adjacent to the top surface of the insulating layer, at least one second copper pattern disposed on the bottom surface of the insulating layer, and at least one embedded aluminum pad disposed on the at least one first copper pattern, the at least one embedded aluminum pad disposed in the insulating layer such that a top surface of the at least one embedded aluminum pad is exposed by the insulating layer may be provided.
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公开(公告)号:US20180096941A1
公开(公告)日:2018-04-05
申请号:US15716301
申请日:2017-09-26
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor: Hyoung Joon KIM , Doo Hwan LEE
IPC: H01L23/538 , H01L23/00 , H01L23/31 , H01L23/29
CPC classification number: H01L23/5389 , H01L23/145 , H01L23/16 , H01L23/295 , H01L23/3114 , H01L23/3128 , H01L23/3135 , H01L23/49816 , H01L23/5384 , H01L23/5386 , H01L23/562 , H01L24/05 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/25 , H01L2224/02377 , H01L2224/02379 , H01L2224/04105 , H01L2224/05096 , H01L2224/05124 , H01L2224/05557 , H01L2224/05559 , H01L2224/05572 , H01L2224/05647 , H01L2224/12105 , H01L2224/13006 , H01L2224/13023 , H01L2224/18 , H01L2224/211 , H01L2224/215 , H01L2224/221 , H01L2224/24101 , H01L2224/24155 , H01L2924/01013 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/05432 , H01L2924/05442 , H01L2924/0665 , H01L2924/07025 , H01L2924/10252 , H01L2924/10253 , H01L2924/10329 , H01L2924/15153 , H01L2924/186 , H01L2924/19105 , H01L2924/3511
Abstract: A fan-out semiconductor package is provided. A semiconductor chip is disposed in a through hole of a first connection member. At least a portion of the semiconductor chip is encapsulated by an encapsulant. A second connection member including a redistribution layer is formed on an active surface of the semiconductor chip. An external connection terminal having excellent reliability is formed on the encapsulant.
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公开(公告)号:US20180096940A1
公开(公告)日:2018-04-05
申请号:US15441655
申请日:2017-02-24
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor: Hyoung Joon KIM , Doo Hwan LEE
IPC: H01L23/538 , H01L23/31 , H01L23/00 , H01L23/29
CPC classification number: H01L23/5389 , H01L23/145 , H01L23/16 , H01L23/295 , H01L23/3114 , H01L23/3128 , H01L23/3135 , H01L23/49816 , H01L23/5384 , H01L23/5386 , H01L23/562 , H01L24/05 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/25 , H01L2224/02377 , H01L2224/02379 , H01L2224/04105 , H01L2224/05096 , H01L2224/05124 , H01L2224/05557 , H01L2224/05559 , H01L2224/05572 , H01L2224/05647 , H01L2224/12105 , H01L2224/13006 , H01L2224/13023 , H01L2224/18 , H01L2224/211 , H01L2224/215 , H01L2224/221 , H01L2224/24101 , H01L2224/24155 , H01L2924/01013 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/05432 , H01L2924/05442 , H01L2924/0665 , H01L2924/07025 , H01L2924/10252 , H01L2924/10253 , H01L2924/10329 , H01L2924/15153 , H01L2924/186 , H01L2924/19105 , H01L2924/3511
Abstract: A fan-out semiconductor package is provided. A semiconductor chip is disposed in a through hole of a first connection member. At least a portion of the semiconductor chip is encapsulated by an encapsulant. A second connection member including a redistribution layer is formed on an active surface of the semiconductor chip. An external connection terminal having excellent reliability is formed on the encapsulant.
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公开(公告)号:US09837372B1
公开(公告)日:2017-12-05
申请号:US15169591
申请日:2016-05-31
Applicant: HRL LABORATORIES LLC
Inventor: Florian G. Herrault , Melanie S. Yajima , Alexandros Margomenos , Miroslav Micovic
IPC: H01L23/10 , H01L21/00 , H05K7/20 , H01L23/00 , H01L23/367 , H01L21/288 , H01L21/027 , H01L21/683 , H01L25/00 , H01L25/18 , H01L25/16 , H01L23/373
CPC classification number: H01L24/70 , H01L21/0273 , H01L21/2885 , H01L21/568 , H01L21/6835 , H01L23/147 , H01L23/367 , H01L23/3675 , H01L23/3736 , H01L23/49822 , H01L23/5389 , H01L24/16 , H01L24/17 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/64 , H01L24/82 , H01L24/89 , H01L24/96 , H01L25/105 , H01L25/16 , H01L25/18 , H01L25/50 , H01L2224/04105 , H01L2224/12105 , H01L2224/13023 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/16227 , H01L2224/24137 , H01L2225/1035 , H01L2225/1058 , H01L2225/1094 , H01L2924/01022 , H01L2924/01079 , H01L2924/014 , H01L2924/05042 , H01L2924/05432 , H01L2924/06 , H01L2924/10253 , H01L2924/10271 , H01L2924/1033 , H01L2924/10335 , H01L2924/13064 , H01L2924/13091 , H01L2924/14 , H01L2924/15153 , H01L2924/15311 , H05K7/20154
Abstract: An interconnect for electrically coupling pads formed on adjacent chips or on packaging material adjacent the chips, with an electrically conductive heat sink being disposed between the pads, the interconnect comprising a metallic membrane layer disposed between two adjacent pads and disposed or bridging over the electrically conductive heat sink so as to avoid making electrical contact with the electrically conductive heat sink. An electroplated metallic layer is disposed on the metallic membrane layer. Fabrication of interconnect permits multiple interconnects to be formed in parallel using fabrication techniques compatible with wafer level fabrication of the interconnects. The interconnects preferably follow a smooth curve to electrically connect adjacent pads and following that smooth curve they bridge over the intervening electrically conductive heat sink material in a predictable fashion.
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公开(公告)号:US09799623B2
公开(公告)日:2017-10-24
申请号:US15190466
申请日:2016-06-23
Applicant: Infineon Technologies Americas Corp.
Inventor: Martin Standing
IPC: H01L23/12 , H01L23/00 , H01L23/13 , H01L23/492 , H01L23/498 , H01L25/16 , H01L23/04 , H01L23/06 , H01L23/14 , H01L23/495
CPC classification number: H01L24/40 , H01L23/04 , H01L23/06 , H01L23/13 , H01L23/14 , H01L23/492 , H01L23/4924 , H01L23/49548 , H01L23/49558 , H01L23/49582 , H01L23/4985 , H01L24/24 , H01L24/34 , H01L24/36 , H01L24/37 , H01L24/82 , H01L24/83 , H01L24/84 , H01L25/165 , H01L2224/24227 , H01L2224/32245 , H01L2224/37012 , H01L2224/37147 , H01L2224/37639 , H01L2224/37644 , H01L2224/40225 , H01L2224/73153 , H01L2224/73253 , H01L2224/76155 , H01L2224/82102 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/01004 , H01L2924/01005 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/05432 , H01L2924/0635 , H01L2924/0665 , H01L2924/07025 , H01L2924/0715 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , Y10T29/49117 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49147 , Y10T29/49155 , Y10T29/49174 , H01L2924/00 , H01L2924/00014
Abstract: A semiconductor package that includes a conductive can, a power semiconductor device electrically and mechanically attached to the inside surface of the can, and an IC semiconductor device copackaged with the power semiconductor device inside the can.
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