公开(公告)号：US09705394B2

公开(公告)日：2017-07-11

申请号：US14397750

申请日：2013-04-30

申请人： Shunzou Ohshima

发明人： Shunzou Ohshima

IPC分类号： H02M1/32 ,  H02M3/158 ,  H03K17/082

CPC分类号： H02M1/32 ,  H02M3/158 ,  H03K17/0822 ,  H03K2217/0027 ,  H03K2217/0063

摘要： In a high voltage power supply apparatus, e.g., for an electric or hybrid vehicle, current is supplied from a high-voltage DC power source to a load via a power FET. A voltage detecting circuit detects the drain-source voltage VDS of the power FET when the current flows through the power FET. A first overcurrent protection signal generating circuit outputs a first overcurrent protection signal based on the detected drain-source voltage VDS of the power FET. A second overcurrent protection signal generating circuit outputs a second overcurrent protection signal based on a detected rate of increase of the drain-source voltage VDS of the power FET. A control circuit protects the components of the power supply apparatus from overcurrents by turning off the FET when the first overcurrent protection signal and/or the second overcurrent protection signal is generated and output to the control circuit.

公开(公告)号：US20120153914A1

公开(公告)日：2012-06-21

申请号：US13393087

申请日：2011-08-03

申请人： Shunzou Ohshima ,  Hiroko Aono

发明人： Shunzou Ohshima ,  Hiroko Aono

IPC分类号： G05F1/46

CPC分类号： H03K17/0822 ,  H03K17/163 ,  H03K17/74

摘要： A load control apparatus is provided in which a circuit of detecting an overcurrent can be correctly operated even if a first capacitor (C1) for noise measures is disposed. Since a second capacitor (C2) is provided between a gate and a drain of an FET (T1), when the voltage (V1) of a point (P1) decreases, a part of the gate current of the FET (T1) bypasses the FET (T1) and flows to the capacitor (C2), and the amount of charge supplied to the gate of the FET (T1) decreases. Therefore, the increase of the drain current of the FET (T1) can be suppressed and a sudden change of the voltage (V1) can be prevented. As a result, the voltage (V1) can be prevented from decreasing to such a degree that the comparator (CMP1) cannot operate, and the comparator (CMP1) can be prevented from malfunctioning.

摘要翻译： 提供了一种负载控制装置，其中即使设置用于噪声测量的第一电容器（C1），也可以正确地操作检测过电流的电路。 由于在FET（T1）的栅极和漏极之间设置第二电容器（C2），所以当点（P1）的电压（V1）减小时，FET（T1）的栅极电流的一部分绕过 FET（T1）并流到电容器（C2），并且提供给FET（T1）的栅极的电荷量减少。 因此，可以抑制FET（T1）的漏极电流的增加，并且可以防止电压（V1）的突然变化。 结果，可以防止电压（V1）降低到比较器（CMP1）不能操作的程度，并且可以防止比较器（CMP1）发生故障。

公开(公告)号：US08089742B2

公开(公告)日：2012-01-03

申请号：US12595332

申请日：2008-04-10

申请人： Shunzou Ohshima

发明人： Shunzou Ohshima

IPC分类号： H02H5/04

CPC分类号： G05F1/573 ,  H02H7/228 ,  H03K17/0822 ,  H03K17/145 ,  H03K17/687

摘要： To provide an overcurrent protection apparatus which can surely protect a load circuit from an overcurrent with a simple configuration. Supposing that the temperature increasing amount of a semiconductor element caused when the semiconductor element is turned on is ΔTch, the on-resistance value of the semiconductor element (T1) is Ron, the thermal resistance value of the semiconductor element (T1) is Rth_f, the temperature increasing amount of a connecting wiring is ΔTw when a current flows into the connecting wiring (WL), the resistance value per unit length of the connecting wiring is Rw, and the thermal resistance value per unit length of the connecting wiring is Rth_w, ΔTch is obtained based on an expression of ΔTW/ΔTch=Rth_w/Rth_f*Rw/Ron with respect to the temperature increasing amount ΔTw not exceeding a difference between the upper limit of the permissible temperature of the connecting wiring (WL) and the upper limit of an operational peripheral temperature, then a voltage Vds is obtained based on an expression of ΔTch=Rth_f*Vds2/Ron with respect to the ΔTch thus obtained, and the voltage Vds thus obtained is set as a determination voltage.

摘要翻译： 提供一种能够以简单的结构可靠地保护负载电路免受过电流的过电流保护装置。 假设半导体元件导通时导致的半导体元件的升温量为＆Dgr; Tch，则半导体元件（T1）的导通电阻值为Ron，半导体元件（T1）的热电阻值为 Rth_f中，当电流流入连接布线（WL）时，连接布线的升温量为＆Dgr; Tw，连接布线的每单位长度的电阻值为Rw，连接单位长度的热阻值 接线为Rth_w，＆Dgr; Tch是基于＆Dgr; TW /＆Dgr; Tch = Rth_w / Rth_f * Rw / Ron的表达式获得的，相对于升温量＆Dgr; Tw不超过允许的上限 连接布线（WL）的温度和操作外围温度的上限，则根据＆Dgr; Tch = Rth_f * Vds2 / Ron的表达相对于所得到的＆Dgr Tch获得电压Vds，并且th 将这样获得的e电压Vds设定为确定电压。

公开(公告)号：US20070139841A1

公开(公告)日：2007-06-21

申请号：US11640216

申请日：2006-12-18

申请人： Shunzou Ohshima

发明人： Shunzou Ohshima

IPC分类号： H02H3/00

CPC分类号： H03K17/08122 ,  H03K17/18

摘要： An ON failure detecting apparatus detects an ON failure of an FET T1 of a power supply circuit which includes the FET T1 disposed between a battery E and a load RL, and controls driving and stopping of the load RL. The ON failure detecting apparatus includes a driver circuit 1 that supplies a driving voltage VD for switching ON and OFF of the FET T1 to a gate of the FET T1, a gate resistor Rg that is provided between the driver circuit 1 and a gate of the FET T1, and an ON failure determining circuit 11 that detects whether a voltage drop in the gate resistor Rg exceeds a predetermined value, and determines that an ON failure occurs in the FET T1, when the voltage drop in the gate resistor Rg exceeds the predetermined value.

摘要翻译： ON故障检测装置检测包括设置在电池E和负载RL之间的FET T 1的电源电路的FET T 1的导通故障，并且控制负载RL的驱动和停止。 ON故障检测装置包括：驱动电路1，其向FET T 1的栅极提供用于切换FET T 1的导通和截止的驱动电压VD;栅极电阻器Rg，其设置在驱动器电路1和栅极 以及ON故障判定电路11，其检测栅极电阻器Rg中的电压降是否超过规定值，并且当栅极电阻器中的电压降下降时，判定为FET T 1中导通故障 Rg超过预定值。

公开(公告)号：US20050088130A1

公开(公告)日：2005-04-28

申请号：US10935071

申请日：2004-09-08

申请人： Shunzou Ohshima

发明人： Shunzou Ohshima

IPC分类号： E05F15/16 ,  B60J1/00 ,  B60J1/17 ,  H02H7/085 ,  H02H11/00 ,  H02P3/08 ,  H02P3/00

CPC分类号： H02H11/002 ,  H02H7/0851

摘要： A power window driving apparatus includes a motor which drives a window by supplying a supply voltage of a power supply, a control circuit which controls the motor so as to stop or reverse a rotation of the motor when a motor current flowing to the motor is increased, a shunt resistance which detects the motor current as a voltage value, and is provided between the motor and a ground and a diode which is provided between a positive side of the power supply and the control circuit for protecting the control circuit.

摘要翻译： 电动窗驱动装置包括通过提供电源的电源电压驱动窗口的电动机，控制电动机的控制电路，以便当流过电动机的电动机电流增加时停止或反转电动机的旋转 检测电动机电流为电压值的分流电阻，并且设置在电动机和接地之间，二极管设置在电源的正极侧和用于保护控制电路的控制电路之间。

公开(公告)号：US06867563B2

公开(公告)日：2005-03-15

申请号：US10473579

申请日：2002-04-02

申请人： Shunzou Ohshima

发明人： Shunzou Ohshima

IPC分类号： E05F15/20 ,  B60J1/00 ,  H02H3/44 ,  H02H7/085 ,  H02P3/08 ,  H02P1/00

CPC分类号： H02H7/0851 ,  E05F15/41 ,  E05Y2400/31 ,  E05Y2400/53 ,  H02H3/44 ,  H02H7/0858

摘要： When abnormal current due to jamming is detected through motor current (ID), the motor current (ID) performs an operation in which an ON/OFF operation and a continuous ON operation are repeated, so that increment of the motor current (ID) is restrained. At this time, determination of jamming is performed based on the ON/OFF operation and the continuous ON operation. When the jamming is determined, the motor current (ID) is stopped, and the motor is reversed.

摘要翻译： 当通过电动机电流（ID）检测到由于卡纸引起的异常电流时，电动机电流（ID）进行重复ON / OFF操作和连续ON操作的操作，使得电动机电流（ID）的增量为 束缚 此时，基于ON / OFF操作和连续ON操作执行干扰的确定。 当确定干扰时，电机电流（ID）停止，电机反转。

公开(公告)号：US06441679B1

公开(公告)日：2002-08-27

申请号：US09619646

申请日：2000-07-19

申请人： Shunzou Ohshima

发明人： Shunzou Ohshima

IPC分类号： G05F110

CPC分类号： H03K17/0822 ,  H03K2017/0806

摘要： A high-voltage semiconductor active fuse has first and second semiconductor elements, a comparator for comparing the voltages of the first and second semiconductor elements with each other, a driver for supplying a control voltage to the control electrodes of the first and second semiconductor elements according to the output of the comparator, a first diode connected between a first input terminal of the comparator and a low-potential power supply terminal of the comparator, and a second diode connected between a second input terminal of the comparator and the low-potential power supply terminal through a resistor. When detecting an abnormal current, the active fuse turns on and off the first semiconductor element to cause current oscillations, which blocks the conduction between an external input terminal and an external output terminal. The active fuse needs no shunt resistor and is capable of quickly responding to an abnormal current caused by an incomplete short circuit failure.

摘要翻译： 高电压半导体有源保险丝具有第一和第二半导体元件，用于比较第一和第二半导体元件的电压的比较器，用于向第一和第二半导体元件的控制电极提供控制电压的驱动器， 连接到比较器的第一输入端和比较器的低电位电源端之间的第一二极管和连接在比较器的第二输入端之间的第二二极管和低电位电源 电源端子通过电阻。 当检测到异常电流时，有源保险丝导通和关闭第一半导体元件，引起电流振荡，阻止外部输入端和外部输出端之间的导通。 有源保险丝不需要分流电阻，能够快速响应不完整短路故障引起的异常电流。

公开(公告)号：US06392859B1

公开(公告)日：2002-05-21

申请号：US09502214

申请日：2000-02-11

申请人： Shunzou Ohshima

发明人： Shunzou Ohshima

IPC分类号： H02H100

CPC分类号： H01L27/0248 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L27/1203 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45124 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/49175 ,  H01L2224/85424 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2224/8546 ,  H01L2224/8547 ,  H01L2924/00014 ,  H01L2924/13055 ,  H01L2924/13091 ,  H03K17/0822 ,  H03K2017/0806 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/01026 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2224/45015 ,  H01L2924/207

摘要： A bidirectional switching device has a first main semiconductor element and a second main semiconductor element. The first main semiconductor element has a first main electrode connected to an ungrounded side of an AC power source, and a second main electrode. The first main semiconductor element contains a first parasitic diode whose cathode region is connected to the first main electrode and whose anode region is connected to the second main electrode. The second main semiconductor element has a third main electrode connected to the second main electrode, and a fourth main electrode connected to a load. The second main semiconductor element contains a second parasitic diode whose anode region is connected to the third main electrode and whose cathode region is connected to the fourth main electrode. A current flowing from the first main semiconductor element toward the second main semiconductor element passes through the second parasitic diode, and a current flowing from the second main semiconductor element toward the first main semiconductor element passes through the first parasitic diode. The bidirectional switching device is used to form a semiconductor active fuse for an AC power system. The semiconductor active fuse is capable of detecting an overcurrent without a shunt resistor, which was connected in series to a power supply cable, thereby minimizing heat dissipation as well as a conduction loss. The semiconductor active fuse is capable of easily and speedily detecting not only an overcurrent caused by a dead short but also an abnormal current caused by an incomplete short circuit failure having a certain extent of short-circuit resistance, and breaking alternating current in an AC power supply cable.

摘要翻译： 双向开关器件具有第一主半导体元件和第二主半导体元件。 第一主要半导体元件具有连接到AC电源的未接地侧的第一主电极和第二主电极。 第一主要半导体元件包括第一寄生二极管，其阴极区域连接到第一主电极并且阳极区域连接到第二主电极。 第二主要半导体元件具有连接到第二主电极的第三主电极和连接到负载的第四主电极。 第二主要半导体元件包含第二寄生二极管，其阳极区域连接到第三主电极，其阴极区域连接到第四主电极。 从第一主半导体元件朝向第二主半导体元件流过的电流通过第二寄生二极管，从第二主半导体元件向第一主半导体元件流过的电流通过第一寄生二极管。 双向开关器件用于形成交流电源系统的半导体有源熔断器。 半导体有源保险丝能够检测到过电流，而没有分流电阻器，其与电源电缆串联连接，从而最小化散热以及导通损耗。 半导体有源保险丝能够容易且快速地检测由短路导致的过电流，而且还能够由具有一定程度的短路电阻的不完全短路故障引起的异常电流以及交流电中断交流电 供电电缆

公开(公告)号：US06269011B1

公开(公告)日：2001-07-31

申请号：US09502007

申请日：2000-02-11

申请人： Shunzou Ohshima

发明人： Shunzou Ohshima

IPC分类号： H02H710

CPC分类号： H02H3/087 ,  H02H7/268 ,  Y10S323/908

摘要： The power supply system of the present invention includes m first semiconductor active fuses arranged in parallel with each other in a forward direction, a first wire having m branches, each branch is connected to one of m input terminals of the m first semiconductor active fuses, m intermediate wires, each of intermediate wires is connected to one of the first end of the m input terminals of the m first semiconductor active fuses, m second semiconductor active fuses arranged in parallel with each other in a reverse direction, each of the second embodiment active fuses having an output terminal connected to one of the second end of the m intermediate wires, and a second wire having m branches, each branch is connected to one of m input terminals of the m second semiconductor active fuses. Each of the reverse configured m second semiconductor active fuses can conduct the main current forwardly through parasitic diode inherently embodied in the structure. Employing this structure, the present invention provides a power supply system with high reliability.

摘要翻译： 本发明的电源系统包括：m个第一半导体有源保险丝，其正向布置成彼此并联;第一导线，具有m个分支;每个支路连接到m个第一半导体有源保险丝的m个输入端中的一个， m个中间线，每个中间线连接到m个第一半导体有源熔丝的m个输入端的第一端中的一个，m个相反方向彼此平行布置的第二半导体有源熔丝，第二实施例 具有连接到m个中间线的第二端之一的输出端子的有源熔丝和具有m个分支的第二导线，每个分支连接到m个第二半导体有源熔丝的m个输入端之一。 每个反向配置的m个第二半导体有源熔丝可以通过固有地体现在结构中的寄生二极管向前导通主电流。 采用这种结构，本发明提供了一种具有高可靠性的电源系统。

公开(公告)号：US08295021B2

公开(公告)日：2012-10-23

申请号：US12995721

申请日：2009-06-02

申请人： Shunzou Ohshima

发明人： Shunzou Ohshima

IPC分类号： H02H3/087 ,  H02H9/02

CPC分类号： H02H3/087 ,  G01R19/16571 ,  H03K17/0822 ,  H03K17/18 ,  H03K2217/0027 ,  H03K2217/0063

摘要： To provide an overcurrent protection apparatus for a load circuit which can detect an overcurrent accurately without being influenced by the offset voltage Voff of an amplifier (AMP1). When the amplifier (AMP1) has the offset voltage Voff which is a positive value (Voff>0), a current obtained by subtracting a current Ia from a current I1 flowing through a resistor R1 by conducting a current source IA is flown into a resistor R3. In contrast, when the amplifier (AMP1) has the offset voltage Voff which is a negative value (Voff

摘要翻译： 为了提供一种可以在不受放大器（AMP1）的偏移电压Voff的影响的情况下精确地检测过电流的负载电路的过电流保护装置。 当放大器（AMP1）具有作为正值（Voff> 0）的偏移电压Voff时，从通过电流源IA流过电阻器R1的电流I1中减去电流Ia而获得的电流被流入电阻器 R3。 相反，当放大器（AMP1）具有作为负值（Voff <0）的偏移电压Voff时，通过传导电流源IB来在电阻器R2产生电压降，从而控制电压Vds变得相同 作为在电阻R1产生的电压。 因此，由于在电阻器R3处产生的电压V3变为消除了偏移电压Voff的影响的电压，因此可以通过消除偏移电压Voff的影响来精确地确定过电流。