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    Semiconductor devices and methods of forming the same
    4.
    发明授权
    Semiconductor devices and methods of forming the same 有权

    公开(公告)号：US09905468B2

    公开(公告)日：2018-02-27

    申请号：US15061200

    申请日：2016-03-04

    申请人： Sung-Min Kim ,  Sunhom Steve Paak ,  Heon-Jong Shin ,  Dong-Ho Cha

    发明人： Sung-Min Kim ,  Sunhom Steve Paak ,  Heon-Jong Shin ,  Dong-Ho Cha

    IPC分类号： H01L21/8234

    CPC分类号： H01L21/823431 ,  H01L21/823481

    摘要： Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.

    SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME
    5.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME 有权
    半导体器件及其形成方法

    公开(公告)号：US20160336234A1

    公开(公告)日：2016-11-17

    申请号：US15061200

    申请日：2016-03-04

    申请人： Sung-Min KIM ,  Sunhom Steve PAAK ,  Heon-Jong SHIN ,  Dong-Ho CHA

    发明人： Sung-Min KIM ,  Sunhom Steve PAAK ,  Heon-Jong SHIN ,  Dong-Ho CHA

    IPC分类号： H01L21/8234 ,  H01L21/02

    CPC分类号： H01L21/823431 ,  H01L21/823481

    摘要： Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.

    摘要翻译： 提供了形成半导体器件的半导体器件和方法。 所述方法可以包括形成翅片，在翅片的侧面上形成第一器件隔离层，形成延伸穿过第一器件隔离层的第二器件隔离层，形成穿过翅片的第一和第二栅极并形成第三器件隔离层 在第一和第二个门之间。 第一器件隔离层可以包括第一材料和第一深度处的最下表面。 第二装置隔离层可以包括第二材料和在比第一深度大的第二深度的最下表面。 第三装置隔离层可以延伸到翅片中，可以包括在比第一深度小的第三深度处的最下表面和不同于第一和第二材料的第三材料。

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20160307802A1

    公开(公告)日：2016-10-20

    申请号：US15050505

    申请日：2016-02-23

    申请人： Dong Hun LEE ,  Sunhom Steve PAAK

    发明人： Dong Hun LEE ,  Sunhom Steve PAAK

    IPC分类号： H01L21/8234 ,  H01L21/033 ,  H01L27/105

    CPC分类号： H01L21/823431 ,  H01L21/3086 ,  H01L27/1104

    摘要： A semiconductor device fabrication method includes sequentially forming a hard mask layer and a sacrificial layer on a substrate, forming an upper mandrel which includes first to third upper sub-mandrels on the sacrificial layer, the first to third upper sub-mandrels extending in a first direction and being spaced apart from each other in a second direction, a width of the first upper sub-mandrel being smaller than widths of the second and third upper sub-mandrels, forming first spacers on sidewalls of each of the upper sub-mandrels, removing the upper mandrel, etching the sacrificial layer using the first spacers as etching masks to form a lower mandrel that includes a plurality of sub-mandrels, forming second spacers on sidewalls of the lower sub-mandrels, removing the lower mandrel, patterning the hard mask layer and the substrate using the second spacers as etching masks to form first to tenth fins which extend alongside each other in the first direction and are spaced apart from each other in the second direction, removing the first, second, fifth and eighth fins, and forming a first gate electrode that intersects the third, fourth, sixth and seventh fins, and a second gate electrode that intersects the sixth, seventh, ninth and tenth fins while not intersecting the third and fourth fins.

    摘要翻译： 一种半导体器件的制造方法，包括在基板上依次形成硬掩模层和牺牲层，形成在牺牲层上包括第一至第三上部子心轴的上部心轴，第一至第三上部子心轴以第一 方向并且在第二方向上彼此间隔开，第一上部心轴的宽度小于第二和第三上部心轴的宽度，在每个上部心轴的侧壁上形成第一间隔件， 去除上心轴，使用第一间隔件作为蚀刻掩模蚀刻牺牲层，以形成包括多个子心轴的下心轴，在下子心轴的侧壁上形成第二间隔件，移除下心轴， 掩模层和基板，使用第二间隔件作为蚀刻掩模，以形成在第一方向上彼此并列并且与e间隔开的第一至第十个散热片 ach在第二方向上另一个，去除第一，第二，第五和第八鳍片，并且形成与第三，第四，第六和第六鳍片相交的第一栅电极，以及与第六，第七，第九和第九鳍片相交的第二栅电极 第十个翅片，而不与第三和第四个翅片相交。

    METHODS OF THERMAL PROCESSING A SOLAR CELL
    7.
    发明申请
    METHODS OF THERMAL PROCESSING A SOLAR CELL 审中-公开
    热处理方法太阳能电池

    公开(公告)号：US20100304527A1

    公开(公告)日：2010-12-02

    申请号：US12717083

    申请日：2010-03-03

    申请人： Peter BORDEN ,  Sunhom (Steve) Paak

    发明人： Peter BORDEN ,  Sunhom (Steve) Paak

    IPC分类号： H01L31/18 ,  H05H1/24

    CPC分类号： H01L31/1864 ,  H01L21/67196 ,  H01L21/67213 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： Embodiments of the invention contemplate the formation of high efficiency solar cells and novel methods for forming the same. Embodiment of the invention can be used to form a solar cell that has doped regions that act as a back surface field. The methods and apparatus disclosed herein may include the use of a doping source, a rapid annealer and a slow annealer. One embodiment of the methods used to form an improved emitter structure include disposing an amount of a dopant atom in a substrate and performing two or more thermal processing steps to cause the dopant to diffuse deeper into the substrate to achieve a desirable multi-facet doping profile.

    摘要翻译： 本发明的实施例考虑了高效率太阳能电池的形成及其形成方法。 本发明的实施例可用于形成具有充当后表面场的掺杂区域的太阳能电池。 本文公开的方法和装置可以包括使用掺杂源，快速退火炉和慢退火炉。 用于形成改进的发射极结构的方法的一个实施方案包括在衬底中设置一定量的掺杂剂原子并执行两个或更多个热处理步骤以使掺杂剂向衬底中扩散更深以获得期望的多面掺杂分布 。