POLISHING SLURRY FOR SILICON CARBIDE AND POLISHING METHOD THEREFOR
    2.
    发明申请
    POLISHING SLURRY FOR SILICON CARBIDE AND POLISHING METHOD THEREFOR 审中-公开
    碳化硅抛光浆及其抛光方法

    公开(公告)号:US20120240479A1

    公开(公告)日:2012-09-27

    申请号:US13514683

    申请日:2010-11-18

    IPC分类号: C09K3/14 H01L21/304

    摘要: The present invention provides an abrasive treatment technique capable of planarizing at an extremely high rate silicon carbide, which is thermally and chemically extremely stable and for which it is extremely difficult to efficiently perform an abrasive treatment. The present invention is a polishing slurry for silicon carbide wherein the polishing slurry includes a suspension liquid in which the pH thereof is 6.5 or more and manganese dioxide particles are suspended. The polishing slurry for silicon carbide is preferably a suspension in which manganese dioxide particles are suspended in an aqueous solution allowed to have a redox potential falling in a range enabling manganese to be present as manganese dioxide. The redox potential V of the polishing slurry preferably falls within the range specified by the following formula representing a relation between V and pH, pH being a variable: 1.014−0.591 pH≦V≦1.620−0.0743 pH

    摘要翻译: 本发明提供一种能够以极高速率碳化硅平坦化的磨料处理技术,该碳化硅在热和化学上极其稳定,极难有效地进行研磨处理。 本发明是一种用于碳化硅的抛光浆料,其中抛光浆料包括其pH为6.5以上的悬浮液和二氧化锰颗粒悬浮。 用于碳化硅的抛光浆料优选是其中二氧化锰颗粒悬浮在允许氧化还原电位落在使锰以二氧化锰存在的范围内的水溶液中的悬浮液。 抛光浆料的氧化还原电位V优选落在由下式表示的范围内,表示V和pH之间的关系,pH是可变的:1.014-0.591 pH&NlE; V< IL; 1.620-0.0743 pH