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    POLISHING SLURRY FOR SILICON CARBIDE AND POLISHING METHOD THEREFOR
    1.
    发明申请
    POLISHING SLURRY FOR SILICON CARBIDE AND POLISHING METHOD THEREFOR 审中-公开
    碳化硅抛光浆及其抛光方法

    公开(公告)号：US20120240479A1

    公开(公告)日：2012-09-27

    申请号：US13514683

    申请日：2010-11-18

    申请人： Toshiro Doi ,  Syuhei Kurokawa ,  Osamu Ohnishi ,  Tadashi Hasegawa ,  Yasuhiro Kawase ,  Yasuhide Yamaguchi

    发明人： Toshiro Doi ,  Syuhei Kurokawa ,  Osamu Ohnishi ,  Tadashi Hasegawa ,  Yasuhiro Kawase ,  Yasuhide Yamaguchi

    IPC分类号： C09K3/14 ,  H01L21/304

    CPC分类号： C09K3/1463 ,  B24B37/044 ,  C09G1/02 ,  H01L21/02024 ,  H01L29/1608

    摘要： The present invention provides an abrasive treatment technique capable of planarizing at an extremely high rate silicon carbide, which is thermally and chemically extremely stable and for which it is extremely difficult to efficiently perform an abrasive treatment. The present invention is a polishing slurry for silicon carbide wherein the polishing slurry includes a suspension liquid in which the pH thereof is 6.5 or more and manganese dioxide particles are suspended. The polishing slurry for silicon carbide is preferably a suspension in which manganese dioxide particles are suspended in an aqueous solution allowed to have a redox potential falling in a range enabling manganese to be present as manganese dioxide. The redox potential V of the polishing slurry preferably falls within the range specified by the following formula representing a relation between V and pH, pH being a variable: 1.014−0.591 pH≦V≦1.620−0.0743 pH

    摘要翻译： 本发明提供一种能够以极高速率碳化硅平坦化的磨料处理技术，该碳化硅在热和化学上极其稳定，极难有效地进行研磨处理。 本发明是一种用于碳化硅的抛光浆料，其中抛光浆料包括其pH为6.5以上的悬浮液和二氧化锰颗粒悬浮。 用于碳化硅的抛光浆料优选是其中二氧化锰颗粒悬浮在允许氧化还原电位落在使锰以二氧化锰存在的范围内的水溶液中的悬浮液。 抛光浆料的氧化还原电位V优选落在由下式表示的范围内，表示V和pH之间的关系，pH是可变的：1.014-0.591 pH＆NlE; V＆lt; IL; 1.620-0.0743 pH

    Polishing apparatus and method of polishing work piece
    4.
    发明授权
    Polishing apparatus and method of polishing work piece 有权

    公开(公告)号：US07070486B2

    公开(公告)日：2006-07-04

    申请号：US10992283

    申请日：2004-11-18

    申请人： Toshiro Doi ,  Ara Philipossian ,  Darren DeNardis

    发明人： Toshiro Doi ,  Ara Philipossian ,  Darren DeNardis

    IPC分类号： B24B1/00

    CPC分类号： H01L21/3212 ,  B24B37/0056 ,  B24B37/04 ,  B24B57/02 ,  H01L21/31053

    摘要： The polishing apparatus is capable of changing a pH value of slurry to adjust polishing rate and polishing a work piece with high flatness. The polishing apparatus comprises: a pressure vessel; a polishing plate provided in the pressure vessel; a pressing plate pressing a work piece onto the polishing plate; a driving unit relatively moving the polishing plate with respect to the pressing plate so as to polish the work piece; a gas supplying source supplying an alkaline gas or an acid gas into the pressure vessel; a gas discharging section discharging the supplied gas from the pressure vessel; and a slurry supplying unit supplying slurry onto the polishing plate. A pH value of the slurry is adjusted by dissolving the alkaline gas or the acid gas in the slurry.

    Polishing apparatus and method of polishing work piece
    5.
    发明申请
    Polishing apparatus and method of polishing work piece 有权
    抛光设备和抛光工件的方法

    公开(公告)号：US20050113007A1

    公开(公告)日：2005-05-26

    申请号：US10992283

    申请日：2004-11-18

    申请人： Toshiro Doi ,  Ara Philipossian ,  Darren DeNardis

    发明人： Toshiro Doi ,  Ara Philipossian ,  Darren DeNardis

    IPC分类号： B24B37/04 ,  B24B57/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  B24B19/00

    CPC分类号： H01L21/3212 ,  B24B37/0056 ,  B24B37/04 ,  B24B57/02 ,  H01L21/31053

    摘要： The polishing apparatus is capable of changing a pH value of slurry to adjust polishing rate and polishing a work piece with high flatness. The polishing apparatus comprises: a pressure vessel; a polishing plate provided in the pressure vessel; a pressing plate pressing a work piece onto the polishing plate; a driving unit relatively moving the polishing plate with respect to the pressing plate so as to polish the work piece; a gas supplying source supplying an alkaline gas or an acid gas into the pressure vessel; a gas discharging section discharging the supplied gas from the pressure vessel; and a slurry supplying unit supplying slurry onto the polishing plate. A pH value of the slurry is adjusted by dissolving the alkaline gas or the acid gas in the slurry.

    摘要翻译： 抛光装置能够改变浆料的pH值以调节抛光速率并且以高平坦度抛光工件。 抛光装置包括：压力容器; 设置在压力容器中的抛光板; 将工件压在抛光板上的按压板; 驱动单元，相对于所述加压板相对地移动所述抛光板以抛光所述工件; 向压力容器供给碱性气体或酸性气体的气体供给源; 气体排出部，从所述压力容器排出供给气体; 以及将浆料供给到研磨板上的浆料供给单元。 通过将碱性气体或酸性气体溶解在浆料中来调节浆料的pH值。

    Method and apparatus for chemical and mechanical polishing
    6.
    发明授权
    Method and apparatus for chemical and mechanical polishing 失效
    化学和机械抛光的方法和装置

    公开(公告)号：US06969308B2

    公开(公告)日：2005-11-29

    申请号：US10437408

    申请日：2003-05-14

    申请人： Toshiro Doi ,  Takashi Fujita

    发明人： Toshiro Doi ,  Takashi Fujita

    IPC分类号： B24B37/00 ,  H01L21/304 ,  C25D3/38 ,  B24B5/00

    CPC分类号： B24B37/046 ,  B24B37/042

    摘要： A polishing device is hermetically accommodated in a chamber containing an atmosphere having a composition different from the ambient air, so that the atmosphere around the polishing device is altered into the composition different from the ambient air, and voltage is applied between a wafer and a polishing pad to polish the wafer with an electrolytic effect. The polishing device has the atmosphere containing extremely less oxygen, preventing a surface of the wafer from oxidation and thereby providing a constant polishing rate.

    摘要翻译： 抛光装置气密地容纳在包含具有不同于周围空气的组成的气氛的室中，使得抛光装置周围的气氛被改变成与环境空气不同的组成，并且在晶片和抛光之间施加电压 垫片以电解效果抛光晶片。 抛光装置具有含有极少氧的气氛，防止晶片的表面氧化，从而提供恒定的抛光速率。

    Polishing apparatus and method of polishing work piece
    8.
    发明授权
    Polishing apparatus and method of polishing work piece 有权
    抛光设备和抛光工件的方法

    公开(公告)号：US07195546B2

    公开(公告)日：2007-03-27

    申请号：US11443390

    申请日：2006-05-30

    申请人： Toshiro Doi ,  Ara Philipossian ,  Darren DeNardis

    发明人： Toshiro Doi ,  Ara Philipossian ,  Darren DeNardis

    IPC分类号： B24B1/00

    CPC分类号： H01L21/3212 ,  B24B37/0056 ,  B24B37/04 ,  B24B57/02 ,  H01L21/31053

    摘要： The polishing apparatus is capable of changing a pH value of slurry to adjust polishing rate and polishing a work piece with high flatness. The polishing apparatus comprises: a pressure vessel; a polishing plate provided in the pressure vessel; a pressing plate pressing a work piece onto the polishing plate; a driving unit relatively moving the polishing plate with respect to the pressing plate so as to polish the work piece; a gas supplying source supplying an alkaline gas or an acid gas into the pressure vessel; a gas discharging section discharging the supplied gas from the pressure vessel; and a slurry supplying unit supplying slurry onto the polishing plate. A pH value of the slurry is adjusted by dissolving the alkaline gas or the acid gas in the slurry.

    摘要翻译： 抛光装置能够改变浆料的pH值以调节抛光速率并且以高平坦度抛光工件。 抛光装置包括：压力容器; 设置在压力容器中的抛光板; 将工件压在抛光板上的按压板; 驱动单元，相对于所述加压板相对地移动所述抛光板以抛光所述工件; 向压力容器供给碱性气体或酸性气体的气体供给源; 气体排出部，从所述压力容器排出供给气体; 以及将浆料供给到研磨板上的浆料供给单元。 通过将碱性气体或酸性气体溶解在浆料中来调节浆料的pH值。

    Method and apparatus for chemical mechanical polishing
    9.
    发明申请
    Method and apparatus for chemical mechanical polishing 失效
    化学机械抛光方法和装置

    公开(公告)号：US20050205433A1

    公开(公告)日：2005-09-22

    申请号：US11133195

    申请日：2005-05-20

    申请人： Toshiro Doi ,  Takashi Fujita

    发明人： Toshiro Doi ,  Takashi Fujita

    IPC分类号： B24B37/00 ,  H01L21/304 ,  B23H5/06

    CPC分类号： B24B37/046 ,  B24B37/042

    摘要： A polishing device is hermetically accommodated in a chamber containing an atmosphere having a composition different from the ambient air, so that the atmosphere around the polishing device is altered into the composition different from the ambient air, and voltage is applied between a wafer and a polishing pad to polish the wafer with an electrolytic effect. The polishing device has the atmosphere containing extremely less oxygen, preventing a surface of the wafer from oxidation and thereby providing a constant polishing rate.

    摘要翻译： 抛光装置气密地容纳在包含具有不同于周围空气的组成的气氛的室中，使得抛光装置周围的气氛被改变成与环境空气不同的组成，并且在晶片和抛光之间施加电压 垫片以电解效果抛光晶片。 抛光装置具有含有极少氧的气氛，防止晶片的表面氧化，从而提供恒定的抛光速率。

    Method and apparatus for chemical mechanical polishing
    10.
    发明授权
    Method and apparatus for chemical mechanical polishing 失效
    化学机械抛光方法和装置

    公开(公告)号：US07785175B2

    公开(公告)日：2010-08-31

    申请号：US11133195

    申请日：2005-05-20

    申请人： Toshiro Doi ,  Takashi Fujita

    发明人： Toshiro Doi ,  Takashi Fujita

    IPC分类号： B24B1/00

    CPC分类号： B24B37/046 ,  B24B37/042

    摘要： A polishing device is hermetically accommodated in a chamber containing an atmosphere having a composition different from the ambient air, so that the atmosphere around the polishing device is altered into the composition different from the ambient air, and voltage is applied between a wafer and a polishing pad to polish the wafer with an electrolytic effect. The polishing device has the atmosphere containing extremely less oxygen, preventing a surface of the wafer from oxidation and thereby providing a constant polishing rate.

    摘要翻译： 抛光装置气密地容纳在包含具有不同于周围空气的组成的气氛的室中，使得抛光装置周围的气氛被改变成与环境空气不同的组成，并且在晶片和抛光之间施加电压 垫片以电解效果抛光晶片。 抛光装置具有含有极少氧的气氛，防止晶片的表面氧化，从而提供恒定的抛光速率。