摘要:
An electrode on a first surface of a semiconductor substrate and a second surface of the semiconductor substrate are connected with each other by a through electrode. A through hole is formed through the semiconductor substrate from the second surface of the semiconductor substrate to an interlayer insulating film on the first surface, and an insulating film is formed on a side surface and a bottom surface of the through hole as well as on the second surface of the semiconductor substrate, so that by simultaneously etching the insulating film on the bottom surface of the through hole and the interlayer insulating film, thus formed, the through hole is formed so as to reach the electrode on the first surface of the semiconductor substrate.
摘要:
Silicon carbide-based fine particles containing an electrically conducting inorganic substance and a electromagnetic wave absorbing material, which are fine particles comprising a particle inner portion of a silicon carbide-based material and a surface layer formed of an electrically conducting inorganic substance mainly comprising carbon, wherein a gradient layer with the compositional ratio of the electrically conducting inorganic substance gradiently increasing toward the particle surface is present and the thickness of the electrically conducting inorganic substance gradient layer is from 1 to 500 nm. The electromagnetic wave absorbing material of the present invention can selectively absorb a electromagnetic wave of 1 to 300 GHz in a wide band.
摘要:
A semiconductor element is provided that includes a semiconductor substrate, a circuit element disposed on the substrate, and a through-hole formed in the substrate having a stripe-like concavo-convex structure on its sidewall with stripes formed in the direction of the thickness of the semiconductor substrate.
摘要:
Silicon carbide-based fine particles containing an electrically conducting inorganic substance and a electromagnetic wave absorbing material, which are fine particles comprising a particle inner portion of a silicon carbide-based material and a surface layer formed of an electrically conducting inorganic substance mainly comprising carbon, wherein a gradient layer with the compositional ratio of the electrically conducting inorganic substance gradiently increasing toward the particle surface is present and the thickness of the electrically conducting inorganic substance gradient layer is from 1 to 500 nm. The electromagnetic wave absorbing material of the present invention can selectively absorb a electromagnetic wave of 1 to 300 GHz in a wide band.
摘要:
In a process for forming a resin body, the thickness of the body is altered by altering the feed rate of raw material to an extruder and the screw rate of the extruder screw in such a relationship to alter the quantity extrusion rate without altering the amount of resin within the extruder.
摘要:
Resin tubes having thick walled portions and thin walled portions are formed by providing a specially configured orifice on an extruder and varying the rate at which the extruded resin tube is pulled from the extruder. The orifice is shaped to form a thin tubular opening and a thick tubular opening communicating with one another, the thick tubular opening being adjacent and down-stream of the thin opening. When the extruded resin tube is pulled at a high speed the thin tubular opening is filled with resin that passes through but does not fill the thick tubular opening. At the slow pulling speed the resin fills at least the open-end portion of the thick tubular opening thereby forming a thick walled portion of the resin tube.
摘要:
A semiconductor element is provided that includes a semiconductor substrate, a circuit element disposed on the substrate, and a through-hole formed in the substrate having a stripe-like concavo-convex structure on its sidewall with stripes formed in the direction of the thickness of the semiconductor substrate.
摘要:
Resin tubes having thick walled portions and thin walled portions are formed by providing a specially configured orifice on an extruder and varying the rate at which the extruded resin tube is pulled from the extruder. The orifice is shaped to form a thin tubular opening and a thick tubular opening communicating with one another, the thick tubular opening being adjacent and down-stream of the thin opening. When the extruded resin tube is pulled at a high speed the thin tubular opening is filled with resin that passes through but does not fill the thick tubular opening. At the slow pulling speed the resin fills at least the open-end portion of the thick tubular opening thereby forming a thick walled portion of the resin tube.