公开(公告)号：US20110057326A1

公开(公告)日：2011-03-10

申请号：US12991720

申请日：2009-12-01

申请人： Takayuki Kai ,  Kazushi Higashi ,  Takeshi Kita ,  Hitoshi Yamanishi ,  Takafumi Okuma

发明人： Takayuki Kai ,  Kazushi Higashi ,  Takeshi Kita ,  Hitoshi Yamanishi ,  Takafumi Okuma

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L21/31116 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/124 ,  H01L27/1248 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05009 ,  H01L2224/05548 ,  H01L2224/13024

摘要： An electrode on a first surface of a semiconductor substrate and a second surface of the semiconductor substrate are connected with each other by a through electrode. A through hole is formed through the semiconductor substrate from the second surface of the semiconductor substrate to an interlayer insulating film on the first surface, and an insulating film is formed on a side surface and a bottom surface of the through hole as well as on the second surface of the semiconductor substrate, so that by simultaneously etching the insulating film on the bottom surface of the through hole and the interlayer insulating film, thus formed, the through hole is formed so as to reach the electrode on the first surface of the semiconductor substrate.

摘要翻译： 半导体衬底的第一表面上的电极和半导体衬底的第二表面通过通孔彼此连接。 从半导体衬底的第二表面到第一表面的层间绝缘膜通过半导体衬底形成通孔，并且在通孔的侧表面和底表面上形成绝缘膜，并且在 第二表面，从而通过同时蚀刻通孔底面上的绝缘膜和形成的层间绝缘膜，形成通孔以到达半导体的第一表面上的电极 基质。

公开(公告)号：US07994634B2

公开(公告)日：2011-08-09

申请号：US12408829

申请日：2009-03-23

申请人： Takeshi Kita ,  Kazushi Higashi

发明人： Takeshi Kita ,  Kazushi Higashi

IPC分类号： H01L23/48

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L24/12 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/13025 ,  H01L2224/13027 ,  H01L2924/0002 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2224/05552

摘要： A semiconductor element is provided that includes a semiconductor substrate, a circuit element disposed on the substrate, and a through-hole formed in the substrate having a stripe-like concavo-convex structure on its sidewall with stripes formed in the direction of the thickness of the semiconductor substrate.

摘要翻译： 提供一种半导体元件，其包括半导体衬底，设置在衬底上的电路元件和形成在衬底中的通孔，该通孔在其侧壁上具有条状凹凸结构，所述通孔形成在厚度方向上的条纹 半导体衬底。

公开(公告)号：US20080277771A1

公开(公告)日：2008-11-13

申请号：US11883166

申请日：2006-01-26

申请人： Kazushi Higashi ,  Yukihiro Maegawa

发明人： Kazushi Higashi ,  Yukihiro Maegawa

IPC分类号： H01L23/48 ,  H01L21/52

CPC分类号： H03H9/1092 ,  H01L23/04 ,  H01L23/053 ,  H01L2224/92144 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/1461 ,  H01L2924/00

摘要： By joining a lid member to a base member, internal electrodes put in contact with the lid member and an electronic device connected to the internal electrodes are placed in an internal space located in between the base member and the lid member. Then, by performing etching from a surface of the lid member on the side opposite from the base member by a prescribed method, through holes that reach the surface of the internal electrodes are formed. A conductive material is given to the through holes, and external electrodes connected to the internal electrodes are formed in a plane, completing a thin type electronic device package.

摘要翻译： 通过将盖构件接合到基座构件，与盖构件接触的内部电极和连接到内部电极的电子装置被放置在位于基座构件和盖构件之间的内部空间中。 然后，通过利用规定的方法从盖部件的与基部部件相反的一侧的表面进行蚀刻，形成到达内部电极表面的通孔。 向通孔提供导电材料，并且连接到内部电极的外部电极形成在平面中，从而完成薄型电子器件封装。

公开(公告)号：US20050104173A1

公开(公告)日：2005-05-19

申请号：US10946372

申请日：2004-09-21

申请人： Kazushi Higashi ,  Kouichi Yoshida ,  Shinji Ishitani ,  Daido Komyoji

发明人： Kazushi Higashi ,  Kouichi Yoshida ,  Shinji Ishitani ,  Daido Komyoji

IPC分类号： H01L21/56 ,  H01L21/60 ,  H01L23/498 ,  H01L29/06 ,  H01L21/44 ,  H01L21/48

CPC分类号： H01L23/4985 ,  H01L21/563 ,  H01L24/28 ,  H01L24/81 ,  H01L29/0657 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81136 ,  H01L2224/81203 ,  H01L2224/81208 ,  H01L2224/81801 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/3512

摘要： In a semiconductor device of the present invention, in order that the contact of electrodes formed on a film substrate with edge parts of a semiconductor element at the time such as when the semiconductor element is mounted thereon may be reliably prevented, in the semiconductor element mounted on at least one surface of the film substrate having the electrodes, an insulating protection part is formed at a desired position of the surface opposed to the electrodes, and the distance between the semiconductor element and the film substrate is set at not less than 10 μm.

摘要翻译： 在本发明的半导体器件中，为了能够可靠地防止在半导体元件安装时在膜基板上形成的半导体元件的边缘部分与半导体元件的边缘部分的接触， 在具有电极的膜基板的至少一个表面上，在与电极相对的表面的期望位置处形成绝缘保护部，并且将半导体元件和膜基板之间的距离设定为不小于10um 。

公开(公告)号：US06506222B2

公开(公告)日：2003-01-14

申请号：US09873347

申请日：2001-06-05

申请人： Shozo Minamitani ,  Takashi Shimizu ,  Shinji Kanayama ,  Kenji Takahashi ,  Kazushi Higashi ,  Satoshi Shida ,  Naoto Hosotani

发明人： Shozo Minamitani ,  Takashi Shimizu ,  Shinji Kanayama ,  Kenji Takahashi ,  Kazushi Higashi ,  Satoshi Shida ,  Naoto Hosotani

IPC分类号： H01L2100

CPC分类号： H05K13/0417 ,  H01L21/67144 ,  H01L21/6838 ,  H01L24/75 ,  H01L2924/12041 ,  Y10T29/41 ,  H01L2924/00

摘要： A divided component separated individually beforehand is supplied in a state while stored in a storage body, taken outside by a take-out and storage unit, and a component is mounted on the divided component by a mounting unit, and thereby a divided component with the component is produced. A plurality of the produced divided components with the components mounted thereon are collected into the storage body. Since the component is mounted on the already divided component, as compared with the prior art, no trouble is given rise to at a junction part between the divided component and the component, thus contributing to an improvement in product quality.

摘要翻译： 在预先分离的分割部件以存储在存储体中的状态下被供给，由取出和存储单元取出外部，并且通过安装单元将部件安装在分割部件上，从而将分割部件与 组件生产。 多个产生的具有安装在其上的部件的分割部件被收集到存储体中。 由于与现有技术相比，组件安装在已经分离的部件上，所以在分割部件和部件之间的连接部分没有引起麻烦，从而有助于提高产品质量。

公开(公告)号：US06207549B1

公开(公告)日：2001-03-27

申请号：US08940981

申请日：1997-09-30

申请人： Kazushi Higashi ,  Norihito Tsukahara ,  Takahiro Yonezawa ,  Yoshihiko Yagi ,  Yoshifumi Kitayama ,  Hiroyuki Otani

发明人： Kazushi Higashi ,  Norihito Tsukahara ,  Takahiro Yonezawa ,  Yoshihiko Yagi ,  Yoshifumi Kitayama ,  Hiroyuki Otani

IPC分类号： H01L2144

CPC分类号： H01L24/78 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/11003 ,  H01L2224/1134 ,  H01L2224/11822 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13019 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/16225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/78303 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  Y10T29/49179 ,  Y10T29/49181 ,  H01L2224/13099 ,  H01L2224/48 ,  H01L2924/00 ,  H01L2924/20752 ,  H01L2924/00015 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/85399

摘要： A method of forming a bump electrode on an IC electrode includes the steps of forming a ball bond on an IC electrode by a wire bonding apparatus, moving a bonding capillary upward, moving the bonding capillary sideways and then downward, bonding an Au wire to the ball bond portion, and cutting the Au wire. The Au wire is prevented from coming in contact with portions around the ball bond portion other than the ball bond portion by presetting a descent position of the bonding capillary to a position higher than a position in which the ball bond is formed.

摘要翻译： 在IC电极上形成突起电极的方法包括以下步骤：通过引线接合装置在IC电极上形成球接合，向上移动接合毛细管，向上移动接合毛细管然后向下移动接合毛细管，将Au线接合到 球接合部分，并切割Au线。 通过将接合毛细管的下降位置预设为高于形成球形接合位置的位置，可防止Au线与球接合部分以外的球接合部分周围接触。

公开(公告)号：US07790594B2

公开(公告)日：2010-09-07

申请号：US12274768

申请日：2008-11-20

申请人： Kazushi Higashi

发明人： Kazushi Higashi

IPC分类号： H01L23/52

CPC分类号： G01D5/2417 ,  G01L1/142 ,  H01G5/16 ,  H01L24/81

摘要： It is an object of the invention to provide an electronic part capable of forming an accurate gap between opposing substrates while also capable of decreasing the area of the electronic part, and a method of producing the same. A second electrode portion (6), having a core pattern (7) and a bump pattern (8) covering the surface thereof, is provided on a device substrate (1), the core pattern (7) is made of a material having hardness greater than that of the bump pattern (8), a first electrode portion (5) of the same material as the bump pattern (8) is provided on a bonding substrate (2), and a functional portion of the device substrate (1) and the first electrode portion (5) are electrically connected by direct bonding of the first electrode portion (5) and the bump pattern (8).

摘要翻译： 本发明的目的是提供一种能够在相对的基板之间形成精确间隙的电子部件，同时还能够减小电子部件的面积及其制造方法。 具有芯图案（7）和覆盖其表面的凸块图案（8）的第二电极部分（6）设置在器件基板（1）上，芯图案（7）由具有硬度 大于凸起图案（8）的厚度，在接合基板（2）上设置与凸块图案（8）相同材料的第一电极部分（5）和器件基板（1）的功能部分， 并且第一电极部分（5）通过第一电极部分（5）和凸起图案（8）的直接接合而电连接。

公开(公告)号：US07549567B2

公开(公告)日：2009-06-23

申请号：US11668794

申请日：2007-01-30

申请人： Kazushi Higashi ,  Shozo Minamitani ,  Shinji Kanayama ,  Kenji Takahashi

发明人： Kazushi Higashi ,  Shozo Minamitani ,  Shinji Kanayama ,  Kenji Takahashi

IPC分类号： B23K1/06 ,  B23K5/20

CPC分类号： H01L21/67144 ,  H01L21/6838 ,  H01L24/75 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/14 ,  H05K13/0409 ,  Y10T29/4913 ,  Y10T29/49142 ,  Y10T29/49144 ,  Y10T29/53174 ,  Y10T29/53178 ,  H01L2924/00 ,  H01L2224/05599

摘要： Component 3 is pressed onto a circuit board 4 so that their respective metal interconnects 5, 6 are in close contact with each other, and ultrasonic vibration is applied to the suction nozzle 14 holding the component 3. Friction is thereby generated between metal interconnects 5, 6 whereby the component 3 is bonded on circuit substrate. Suction nozzle 14 for handling components is made of stainless steel and has a working face 14a provided with a hardened layer 14b, or alternatively, suction nozzle 14 may have a suction head 14c having a working face 14a made of cemented carbide. Working face 14a of suction nozzle 14 is refined by polishing as required during the mounting operation.

摘要翻译： 部件3被压在电路板4上，使得它们各自的金属互连件5,6彼此紧密接触，并且超声波振动被施加到保持部件3的吸嘴14上。从而在金属互连件5之间产生摩擦， 6，由此将部件3接合在电路基板上。 用于处理部件的吸嘴14由不锈钢制成并具有设置有硬化层14b的工作面14a，或者，吸嘴14可具有具有由硬质合金制成的工作面14a的吸头14c。 吸嘴14的工作面14a在安装操作期间根据需要进行研磨精制。

公开(公告)号：US07071090B2

公开(公告)日：2006-07-04

申请号：US11073714

申请日：2005-03-08

申请人： Kazushi Higashi ,  Norihito Tsukahara ,  Takahiro Yonezawa ,  Yoshihiko Yagi ,  Yoshifumi Kitayama ,  Hiroyuki Otani

发明人： Kazushi Higashi ,  Norihito Tsukahara ,  Takahiro Yonezawa ,  Yoshihiko Yagi ,  Yoshifumi Kitayama ,  Hiroyuki Otani

IPC分类号： H01L21/44

CPC分类号： H01L24/78 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/11003 ,  H01L2224/1134 ,  H01L2224/11822 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13019 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/16225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/78303 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  Y10T29/49179 ,  Y10T29/49181 ,  H01L2224/13099 ,  H01L2224/48 ,  H01L2924/00 ,  H01L2924/20752 ,  H01L2924/00015 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/85399

摘要： A method of forming a bump electrode on an IC electrode includes the steps of forming a ball bond on an IC electrode by a wire bonding apparatus, moving a bonding capillary upward, moving the bonding capillary sideways and then downward, bonding an Au wire to the ball bond portion, and cutting the Au wire. The Au wire is prevented from coming in contact with portions around the ball bond portion other than the ball bond portion by presetting a descent position of the bonding capillary to a position higher than a position in which the ball bond is formed.

摘要翻译： 在IC电极上形成突起电极的方法包括以下步骤：通过引线接合装置在IC电极上形成球接合，向上移动接合毛细管，向上移动接合毛细管然后向下移动接合毛细管，将Au线接合到 球接合部分，并切割Au线。 通过将接合毛细管的下降位置预设为高于形成球形接合位置的位置，可防止Au线与球接合部分以外的球接合部分周围接触。

公开(公告)号：US20050191838A1

公开(公告)日：2005-09-01

申请号：US11114084

申请日：2005-04-26

申请人： Shoriki Narita ,  Koichi Yoshida ,  Masahiko Ikeya ,  Takaharu Mae ,  Shinji Kanayama ,  Makoto Imanishi ,  Kazushi Higashi ,  Kenji Fukumoto ,  Hiroshi Wada

发明人： Shoriki Narita ,  Koichi Yoshida ,  Masahiko Ikeya ,  Takaharu Mae ,  Shinji Kanayama ,  Makoto Imanishi ,  Kazushi Higashi ,  Kenji Fukumoto ,  Hiroshi Wada

IPC分类号： H05K3/34 ,  B23K20/00 ,  H01L21/00 ,  H01L21/60 ,  H01L21/44

CPC分类号： H01L24/742 ,  H01L21/67138 ,  H01L21/67144 ,  H01L21/67248 ,  H01L24/11 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/45144 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/01065 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/10329 ,  H01L2924/351 ,  Y10T29/4921 ,  H01L2924/00 ,  H01L2924/00014

摘要： A preheat device (160) is provided to execute, before forming bumps (16) to electrode parts (15), a pre-formation temperature control for bonding promotion to promote bonding between the electrode parts and the bumps during bump formation. Metal particles of the electrode parts can be changed to an appropriate state before the bump formation. Phenomenally, a bonding state between the electrode parts and the bumps can be improved as compared with the conventional art. In a further arrangement of the present invention, semiconductor components with bumps can be heated under a bonding strength improvement condition by a bonding stage (316) through controlling the heating by a controller (317).

摘要翻译： 提供预热装置（160），用于在形成凸起（16）到电极部件（15）之前执行用于粘接促进的预制温度控制，以促进在凸起形成期间电极部件和凸块之间的接合。 电极部分的金属颗粒可以在凸点形成之前变成适当的状态。 与现有技术相比，现在可以改善电极部分和凸块之间的结合状态。 在本发明的另一方面中，通过控制器（317）的加热来控制加热，可以通过接合台（316）在接合强度改善条件下加热具有凸块的半导体部件。