公开(公告)号：US09181633B2

公开(公告)日：2015-11-10

申请号：US12251754

申请日：2008-10-15

申请人： Manfred Jurisch ,  Stefan Eichler ,  Thomas Bünger ,  Berndt Weinert ,  Frank Börner

发明人： Manfred Jurisch ,  Stefan Eichler ,  Thomas Bünger ,  Berndt Weinert ,  Frank Börner

IPC分类号： H01L21/8252 ,  C30B33/02 ,  C30B11/00 ,  H01L21/02 ,  C30B29/40 ,  C30B29/42 ,  C30B35/00

CPC分类号： C30B33/02 ,  C30B11/00 ,  C30B29/40 ,  C30B29/42 ,  C30B35/00 ,  H01L21/02395 ,  H01L21/3245 ,  H01L21/67346 ,  H01L2924/10329 ,  Y10T117/10 ,  Y10T428/21 ,  Y10T428/24479 ,  Y10T428/24612 ,  Y10T428/31

摘要： A device for heat treating (annealing) a III-V semiconductor wafer comprises at least one wafer support unit which is dimensioned such that a cover provided above the wafer surface is either spaced without any distance or with a distance of maximally about 2 mm to the wafer surface. A process for heat treating III-V semiconductor wafers having diameters larger than 100 mm and a dislocation density below 1×104 cm−2 is carried out in the device of the invention. SI GaAs wafers produced have an at least 25% increased characteristic fracture strength (Weibull distribution), an improved radial macroscopic and mesoscopic homogeneity and an improved quality of the mechano-chemically polished surface. The characteristic fracture strength is higher than 1900 MPa.

摘要翻译： 用于热处理（退火）III-V半导体晶片的装置包括至少一个晶片支撑单元，该晶片支撑单元的尺寸被设计成使得设置在晶片表面上方的盖子间隔开距离或距离最远不超过约2mm的距离 晶圆表面。 在本发明的装置中进行热处理直径大于100mm，位错密度低于1×104cm-2的III-V半导体晶片的方法。 生产的SI GaAs晶片具有至少25％的特征断裂强度（威布尔分布），改进的径向宏观和介观均匀性以及机械化学抛光表面的改进质量。 特征断裂强度高于1900 MPa。

公开(公告)号：US08025729B2

公开(公告)日：2011-09-27

申请号：US11478449

申请日：2006-06-30

申请人： Manfred Jurisch ,  Stefan Eichler ,  Thomas Bünger ,  Berndt Weinert ,  Frank Börner

发明人： Manfred Jurisch ,  Stefan Eichler ,  Thomas Bünger ,  Berndt Weinert ,  Frank Börner

IPC分类号： C30B23/00 ,  C30B25/00 ,  B32B3/00 ,  B32B17/10

CPC分类号： C30B33/02 ,  C30B11/00 ,  C30B29/40 ,  C30B29/42 ,  C30B35/00 ,  H01L21/02395 ,  H01L21/3245 ,  H01L21/67346 ,  H01L2924/10329 ,  Y10T117/10 ,  Y10T428/21 ,  Y10T428/24479 ,  Y10T428/24612 ,  Y10T428/31

摘要： A device for heat treating (annealing) a III-V semiconductor wafer comprises at least one wafer support unit which is dimensioned such that a cover provided above the wafer surface is either spaced without any distance or with a distance of maximally about 2 mm to the wafer surface. A process for heat treating III-V semiconductor wafers having diameters larger than 100 mm and a dislocation density below 1×104 cm−2 is carried out in the device of the invention. SI GaAs wafers produced have an at least 25% increased characteristic fracture strength (Weibull distribution), an improved radial macroscopic and mesoscopic homogeneity and an improved quality of the mechano-chemically polished surface. The characteristic fracture strength is higher than 1900 MPa.

摘要翻译： 用于热处理（退火）III-V半导体晶片的装置包括至少一个晶片支撑单元，该晶片支撑单元的尺寸被设计成使得设置在晶片表面上方的盖子间隔开距离或距离最远不超过约2mm的距离 晶圆表面。 在本发明的装置中进行热处理直径大于100mm，位错密度低于1×104cm-2的III-V半导体晶片的方法。 生产的SI GaAs晶片具有至少25％的特征断裂强度（威布尔分布），改进的径向宏观和介观均匀性以及机械化学抛光表面的改进质量。 特征断裂强度高于1900 MPa。

公开(公告)号：US08652253B2

公开(公告)日：2014-02-18

申请号：US12133870

申请日：2008-06-05

申请人： Stefan Eichler ,  Thomas Bünger ,  Michael Butter ,  Rico Rühmann ,  Max Scheffer-Czygan

发明人： Stefan Eichler ,  Thomas Bünger ,  Michael Butter ,  Rico Rühmann ,  Max Scheffer-Czygan

IPC分类号： C30B11/00 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04 ,  C30B35/00

CPC分类号： H01L29/36 ,  C30B11/002 ,  C30B11/003 ,  C30B11/007 ,  C30B29/42 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1092 ,  Y10T428/12

摘要： An arrangement for manufacturing a crystal of the melt of a raw material comprises: a furnace having a heating device with one or more heating elements, which are configured to generate a gradient temperature field directed along a first direction, a plurality of crucibles for receiving the melt, which are arranged within the gradient temperature field side by side, and a device for homogenizing the temperature field within a plane perpendicular to the first direction in the at least two crucibles. The arrangement further has a filling material inserted within a space between the crucibles wherein the filling shows an anisotropic heat conductivity. Additionally or alternatively, the arrangement may comprise a device for generating magnetic migration fields, both the filling material having the anisotropic heat conductivity and the device for generating magnetic migration fields being suited to compensate or prevent the formation of asymmetric phase interfaces upon freezing of the raw melt.

摘要翻译： 用于制造原料熔体的晶体的装置包括：具有加热装置的炉子，该加热装置具有一个或多个加热元件，其被配置成产生沿着第一方向定向的梯度温度场，多个坩埚，用于接收 熔融物，它们并排设置在梯度温度场内，以及用于在至少两个坩埚内垂直于第一方向的平面内使温度场均匀化的装置。 该布置还具有插入在坩埚之间的空间内的填充材料，其中填充物显示各向异性热导率。 附加地或替代地，该装置可以包括用于产生磁性迁移场的装置，具有各向异性热导率的填充材料和用于产生磁性迁移场的装置适于补偿或防止在生坯的冷冻时形成不对称相界面 熔化。

公开(公告)号：US06358315B1

公开(公告)日：2002-03-19

申请号：US09526768

申请日：2000-03-16

申请人： Eckhard Küssel ,  Thomas Bünger ,  Tilo Flade ,  Berndt Weinert ,  Klaus Sonnenberg

发明人： Eckhard Küssel ,  Thomas Bünger ,  Tilo Flade ,  Berndt Weinert ,  Klaus Sonnenberg

IPC分类号： C30B1302

CPC分类号： C30B29/42 ,  C30B11/14 ,  C30B29/40

摘要： In a method and an apparatus for producing monocrystals, in particular of gallium arsenide monocrystals, the crystal growth is carried out with a thermal shock resistant nucleus which is freely standing within a nucleus channel and the interspace in the nucleus channel between the nucleus and the crucible is filled with liquid boric oxide.

摘要翻译： 在用于生产单晶，特别是砷化镓单晶的方法和装置中，晶体生长是用耐热冲击核进行的，该核可自由站立在细胞核通道内，并且细胞核和坩埚之间的细胞核通道中的间隙 填充有液体氧化硼。

公开(公告)号：US08771560B2

公开(公告)日：2014-07-08

申请号：US12034345

申请日：2008-02-20

申请人： Ulrich Kretzer ,  Stefan Eichler ,  Thomas Bünger

发明人： Ulrich Kretzer ,  Stefan Eichler ,  Thomas Bünger

IPC分类号： H01B1/02 ,  H01B1/08 ,  H01B1/06 ,  C30B9/00 ,  C30B11/00 ,  C30B17/00 ,  C30B21/02 ,  C30B28/06

CPC分类号： C30B11/04 ,  C30B11/00 ,  C30B11/002 ,  C30B11/14 ,  C30B29/40 ,  C30B29/42

摘要： In a process for manufacturing doped semiconductor single crystal comprises solidifying in a crucible, the amount of dopant is added into the semiconductor melt after the beginning of the crystal growth onto the seed crystal, or after at least partial solidification of the semiconductor single crystal in a conical or tapered portion of the crucible. Dopant may be partially added in advance into the crucible, with the remainder added into the semiconductor melt as described. Type III-V semiconductor single crystals or wafers having a diameter of at least about 100 mm, can be prepared having an electrical conductivity of at least about 250 Siemens/cm, and/or an electric resistivity of at most about 4×10−3 Ωcm, and/or a significantly improved ratio of hall mobility to charge carrier concentration.

摘要翻译： 在制造掺杂半导体单晶的工艺中包括在坩埚中固化，在晶体生长开始到晶种之后，或在半导体单晶的至少部分固化之后，将掺杂剂的量添加到半导体熔体中 坩埚的锥形或锥形部分。 掺杂剂可以预先部分地添加到坩埚中，其余部分如上所述加入到半导体熔体中。 可以制备具有至少约100mm直径的III-V族半导体单晶或晶片，其电导率至少为约250西门子/厘米，和/或至多约4×10-3的电阻率 ＆OHgr; cm，和/或显着改善霍尔迁移率与载流子浓度的比率。

公开(公告)号：US06712904B1

公开(公告)日：2004-03-30

申请号：US09937107

申请日：2001-09-19

申请人： Klaus Sonnenberg ,  Eckhard Küssel ,  Thomas Bünger ,  Tilo Flade ,  Berndt Weinert

发明人： Klaus Sonnenberg ,  Eckhard Küssel ,  Thomas Bünger ,  Tilo Flade ,  Berndt Weinert

IPC分类号： C30B1100

CPC分类号： C30B29/40 ,  C30B11/003 ,  C30B29/42 ,  Y10T117/1068 ,  Y10T117/1076 ,  Y10T117/1088

摘要： A device is made available for producing monocrystals, for example large-diameter gallium arsenide monocrystals, that has a cylindrical heating appliance with a floor heater (2) and a cover heater (3). The heating surfaces of the floor and the cover heater are considerably larger than the cross-sectional area of the monocrystal to be produced. In addition, an insulator (6) is planned for the reaction space that is designed to prevent a radial heat flow and the guarantee a strictly axial heat flow over the complete height of the reaction space between the cover heater (3) and the floor heater (2).

摘要翻译： 一种器件可用于生产单晶体，例如大直径砷化镓单晶，其具有带有地板加热器（2）和盖加热器（3）的圆柱形加热器具。 地板和盖加热器的加热表面比要制造的单晶的横截面积大得多。 此外，为了防止径向热流而设计的反应空间的绝缘体（6）被设计，并且确保在盖加热器（3）和地板加热器（3）之间的反应空间的整个高度上的严格的轴向热流 （2）。

公开(公告)号：US07410540B2

公开(公告)日：2008-08-12

申请号：US11478450

申请日：2006-06-30

申请人： Ulrich Kretzer ,  Stefan Eichler ,  Thomas Bünger

发明人： Ulrich Kretzer ,  Stefan Eichler ,  Thomas Bünger

IPC分类号： C30B15/20

CPC分类号： C30B11/04 ,  C30B11/00 ,  C30B11/002 ,  C30B11/14 ,  C30B29/40 ,  C30B29/42

摘要： In a process for manufacturing doped semiconductor single crystal comprises solidifying in a crucible, the amount of dopant is added into the semiconductor melt after the beginning of the crystal growth onto the seed crystal, or after at least partial solidification of the semiconductor single crystal in a conical or tapered portion of the crucible. Dopant may be partially added in advance into the crucible, with the remainder added into the semiconductor melt as described. Type III-V semiconductor single crystals or wafers having a diameter of at least about 100 mm, can be prepared having an electrical conductivity of at least about 250 Siemens/cm, and/or an electric resistivity of at most about 4×10−3 Ωcm, and/or a significantly improved ratio of hall mobility to charge carrier concentration.

摘要翻译： 在制造掺杂半导体单晶的工艺中包括在坩埚中固化，在晶体生长开始到晶种之后，或在半导体单晶的至少部分固化之后，将掺杂剂的量添加到半导体熔体中 坩埚的锥形或锥形部分。 掺杂剂可以预先部分地添加到坩埚中，其余部分如上所述加入到半导体熔体中。 可以制备具有至少约100mm直径的III-V族半导体单晶或晶片，其电导率至少为约250西门子/厘米2，和/或至多约4×10 -6的电阻率。 3ωgmm，和/或显着改善霍尔迁移率与载流子浓度的比率。