公开(公告)号：US20160329242A1

公开(公告)日：2016-11-10

申请号：US15048993

申请日：2016-02-19

Applicant: Thomas OSZINDA ,  Tae-Jin YIM ,  Sang-Hoon AHN ,  Nae-In LEE

Inventor： Thomas OSZINDA ,  Tae-Jin YIM ,  Sang-Hoon AHN ,  Nae-In LEE

IPC: H01L21/768

CPC classification number: H01L21/76831 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2221/1047

Abstract: In a method of forming a wiring structure, an insulating interlayer is formed on a substrate. The insulating interlayer includes an opening and has pores distributed therein and exposed at a surface thereof. The insulating interlayer is exposed to a silane compound to form a pore sealing layer on the surface of the insulating interlayer and a sidewall of the opening. A conductive pattern filling the opening is formed on the pore sealing layer.

Abstract translation: 在形成布线结构的方法中，在基板上形成绝缘中间层。 绝缘中间层包括开口，并且其中分布有孔并在其表面露出。 将绝缘中间层暴露于硅烷化合物以在绝缘中间层的表面和开口的侧壁上形成孔密封层。 填充开口的导电图案形成在孔密封层上。

公开(公告)号：US08575041B2

公开(公告)日：2013-11-05

申请号：US13233590

申请日：2011-09-15

Applicant: Matthias Schaller ,  Daniel Fischer ,  Thomas Oszinda

Inventor： Matthias Schaller ,  Daniel Fischer ,  Thomas Oszinda

IPC: H01L21/469

CPC classification number: H01L21/3105 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/31116 ,  H01L21/76814 ,  H01L21/76826

Abstract: Damaged surface areas of low-k dielectric materials may be efficiently repaired by avoiding the saturation of dangling silicon bonds after a reactive plasma treatment on the basis of OH groups, as is typically applied in conventional process strategies. The saturation of the dangling bond may be accomplished by directly initiating a chemical reaction with appropriate organic species, thereby providing superior reaction conditions, which in turn results in a more efficient restoration of the dielectric characteristics.

Abstract translation: 通过在常规工艺策略中通常应用的反应性等离子体处理后，通过避免在反应等离子体处理之后的悬挂硅键的饱和，可以有效地修复低k电介质材料的损坏的表面积。 悬挂键的饱和可以通过直接引发与合适的有机物质的化学反应来实现，从而提供优异的反应条件，这又导致更有效的电介质特性的恢复。

公开(公告)号：US08423320B2

公开(公告)日：2013-04-16

申请号：US12417787

申请日：2009-04-03

Applicant: Matthias Schaller ,  Thomas Oszinda ,  Christin Bartsch ,  Daniel Fischer

Inventor： Matthias Schaller ,  Thomas Oszinda ,  Christin Bartsch ,  Daniel Fischer

IPC: G01B11/00

CPC classification number: G01N21/84 ,  G01N21/3563 ,  G01N2021/3595 ,  G01N2021/8416 ,  H01L22/12

Abstract: By using powerful data analysis techniques, such as PCR, PLS, CLS and the like, in combination with measurement techniques providing structural information, gradually varying material characteristics may be determined during semiconductor fabrication, thereby also enabling the monitoring of complex manufacturing sequences. For instance, the material characteristics of sensitive dielectric materials, such as ULK material, may be detected, for instance with respect to an extension of a damage zone, in order to monitor the quality of metallization systems of sophisticated semiconductor devices. The inline measurement data may be obtained on the basis of infrared spectroscopy, for instance using FTIR and the like, which may even allow directly obtaining the measurement data at process chambers, substantially without affecting the overall process throughput.

Abstract translation: 通过使用强大的数据分析技术，例如PCR，PLS，CLS等，结合提供结构信息的测量技术，可以在半导体制造期间确定逐渐变化的材料特性，从而也可以监测复杂的制造顺序。 例如，为了监测复杂半导体器件的金属化系统的质量，可以例如相对于损伤区域的延伸部分来检测诸如ULK材料的敏感电介质材料的材料特性。 可以基于红外光谱法获得在线测量数据，例如使用FTIR等，其甚至可以允许在处理室处直接获得测量数据，基本上不影响整个工艺处理量。

公开(公告)号：US20120049383A1

公开(公告)日：2012-03-01

申请号：US13178587

申请日：2011-07-08

Applicant: Matthias Schaller ,  Daniel Fischer ,  Thomas Oszinda

Inventor： Matthias Schaller ,  Daniel Fischer ,  Thomas Oszinda

IPC: H01L23/48 ,  H01L21/302

CPC classification number: H01L21/3105 ,  H01L21/02126 ,  H01L21/76814 ,  H01L21/76826

Abstract: Patterning-induced damage of sensitive low-k dielectric materials in semiconductors devices may be restored to a certain degree on the basis of a surface treatment that is performed prior to exposing the device to ambient atmosphere. To this end, the dangling silicon bonds of the silicon oxide-based low-k dielectric material may be saturated in a confined process environment, thereby providing superior surface conditions for the subsequent application of an appropriate repair chemistry.

Abstract translation: 基于在将装置暴露于环境气氛之前执行的表面处理，半导体器件中敏感的低k介电材料的图案化诱导的损伤可以恢复到一定程度。 为此，基于氧化硅的低k介电材料的悬挂硅键可在受限制的工艺环境中饱和，从而为后续应用适当的修复化学品提供优异的表面条件。

公开(公告)号：US20100301494A1

公开(公告)日：2010-12-02

申请号：US12786117

申请日：2010-05-24

Applicant: Matthias Schaller ,  Thomas Oszinda ,  Susanne Leppack ,  Daniel Fischer

Inventor： Matthias Schaller ,  Thomas Oszinda ,  Susanne Leppack ,  Daniel Fischer

IPC: H01L23/48 ,  H01L21/71 ,  H01L21/02

CPC classification number: H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

Abstract: Silicon oxide based low-k dielectric materials may be provided with a hydrophobic low-k surface area, even after exposure to a reactive process ambient, by performing a surface treatment on the basis of hexamethylcyclotrisilazane and/or octamethylcyclotetrasilazane. In addition to the surface treatment, a polymerization may be initiated on the basis of a hydrophobic surface nature of the silicon-based dielectric material, thereby increasing the chemical stability during the further processing.

Abstract translation: 通过基于六甲基环三硅氮烷和/或八甲基环四硅氮烷进行表面处理，即使在暴露于反应性工艺环境中之后，也可以提供基于氧化硅的低k电介质材料的疏水性低k表面积。 除了表面处理之外，可以基于硅基介电材料的疏水表面性质开始聚合，从而在进一步加工期间增加化学稳定性。

公开(公告)号：US09666478B2

公开(公告)日：2017-05-30

申请号：US15048993

申请日：2016-02-19

Applicant: Thomas Oszinda ,  Tae-Jin Yim ,  Sang-Hoon Ahn ,  Nae-In Lee

Inventor： Thomas Oszinda ,  Tae-Jin Yim ,  Sang-Hoon Ahn ,  Nae-In Lee

IPC: H01L21/76 ,  H01L21/768

CPC classification number: H01L21/76831 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2221/1047

Abstract: In a method of forming a wiring structure, an insulating interlayer is formed on a substrate. The insulating interlayer includes an opening and has pores distributed therein and exposed at a surface thereof. The insulating interlayer is exposed to a silane compound to form a pore sealing layer on the surface of the insulating interlayer and a sidewall of the opening. A conductive pattern filling the opening is formed on the pore sealing layer.

公开(公告)号：US08440579B2

公开(公告)日：2013-05-14

申请号：US13178587

申请日：2011-07-08

Applicant: Matthias Schaller ,  Daniel Fischer ,  Thomas Oszinda

Inventor： Matthias Schaller ,  Daniel Fischer ,  Thomas Oszinda

IPC: H01L21/31

CPC classification number: H01L21/3105 ,  H01L21/02126 ,  H01L21/76814 ,  H01L21/76826

Abstract: Patterning-induced damage of sensitive low-k dielectric materials in semiconductors devices may be restored to a certain degree on the basis of a surface treatment that is performed prior to exposing the device to ambient atmosphere. To this end, the dangling silicon bonds of the silicon oxide-based low-k dielectric material may be saturated in a confined process environment, thereby providing superior surface conditions for the subsequent application of an appropriate repair chemistry.

Abstract translation: 基于在将装置暴露于环境气氛之前执行的表面处理，半导体器件中敏感的低k介电材料的图案化诱导的损伤可以恢复到一定程度。 为此，基于氧化硅的低k介电材料的悬挂硅键可在受限制的工艺环境中饱和，从而为后续应用适当的修复化学品提供优异的表面条件。

公开(公告)号：US20130072018A1

公开(公告)日：2013-03-21

申请号：US13233590

申请日：2011-09-15

Applicant: Matthias Schaller ,  Daniel Fischer ,  Thomas Oszinda

Inventor： Matthias Schaller ,  Daniel Fischer ,  Thomas Oszinda

IPC: H01L21/768 ,  H01L21/3105

CPC classification number: H01L21/3105 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/31116 ,  H01L21/76814 ,  H01L21/76826

Abstract: Damaged surface areas of low-k dielectric materials may be efficiently repaired by avoiding the saturation of dangling silicon bonds after a reactive plasma treatment on the basis of OH groups, as is typically applied in conventional process strategies. The saturation of the dangling bond may be accomplished by directly initiating a chemical reaction with appropriate organic species, thereby providing superior reaction conditions, which in turn results in a more efficient restoration of the dielectric characteristics.

Abstract translation: 通过在常规工艺策略中通常应用的反应性等离子体处理后，通过避免在反应等离子体处理之后的悬挂硅键的饱和，可以有效地修复低k电介质材料的损坏的表面积。 悬挂键的饱和可以通过直接引发与合适的有机物质的化学反应来实现，从而提供优异的反应条件，这又导致更有效的电介质特性的恢复。

公开(公告)号：US20090319196A1

公开(公告)日：2009-12-24

申请号：US12417787

申请日：2009-04-03

Applicant: Matthias Schaller ,  Thomas Oszinda ,  Christin Bartsch ,  Daniel Fischer

Inventor： Matthias Schaller ,  Thomas Oszinda ,  Christin Bartsch ,  Daniel Fischer

IPC: G06F19/00 ,  H01L21/66 ,  H01L21/00

CPC classification number: G01N21/84 ,  G01N21/3563 ,  G01N2021/3595 ,  G01N2021/8416 ,  H01L22/12

Abstract: By using powerful data analysis techniques, such as PCR, PLS, CLS and the like, in combination with measurement techniques providing structural information, gradually varying material characteristics may be determined during semiconductor fabrication, thereby also enabling the monitoring of complex manufacturing sequences. For instance, the material characteristics of sensitive dielectric materials, such as ULK material, may be detected, for instance with respect to an extension of a damage zone, in order to monitor the quality of metallization systems of sophisticated semiconductor devices. The inline measurement data may be obtained on the basis of infrared spectroscopy, for instance using FTIR and the like, which may even allow directly obtaining the measurement data at process chambers, substantially without affecting the overall process throughput.

Abstract translation: 通过使用强大的数据分析技术，例如PCR，PLS，CLS等，结合提供结构信息的测量技术，可以在半导体制造期间确定逐渐变化的材料特性，从而也可以监测复杂的制造顺序。 例如，为了监测复杂半导体器件的金属化系统的质量，可以例如相对于损伤区域的延伸部分来检测诸如ULK材料的敏感电介质材料的材料特性。 可以基于红外光谱法获得在线测量数据，例如使用FTIR等，其甚至可以允许在处理室处直接获得测量数据，基本上不影响整个工艺处理量。