公开(公告)号：US20080014369A1

公开(公告)日：2008-01-17

申请号：US11781632

申请日：2007-07-23

申请人： Hui-Lin Chang ,  Chung-Chi Ko ,  Tien Bao ,  Yun-Chen Lu

发明人： Hui-Lin Chang ,  Chung-Chi Ko ,  Tien Bao ,  Yun-Chen Lu

IPC分类号： H05H1/00

CPC分类号： H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3124 ,  H01L21/31633 ,  H01L21/76819 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76835

摘要： A method of lowering the dielectric constant of an organosilicon low k dielectric layer while improving the hardness and thermal stability is provided. A deposited layer of carbon doped oxide, HSQ, or MSQ is cured and treated with a He plasma which improves hardness for a subsequent CMP step and lowers the dielectric constant. There is no loss of H2O or CH4 during the He treatment. The low k dielectric layer is then treated with a H2 plasma which converts some of the Si—O and Si—CH3 bonds near the surface to Si—H bonds, thereby further lowering the dielectric constant and increasing thermal stability that improves breakdown resistance. Moisture uptake is also reduced. The method is especially useful for interconnect schemes with deep sub-micron ground rules. Surprisingly, the k value obtained from two different plasma treatments is lower than when two He treatments or two H2 treatment are performed.

摘要翻译： 提供降低有机硅低k电介质层的介电常数同时提高硬度和热稳定性的方法。 掺杂碳的氧化物，HSQ或MSQ的沉积层用He等离子体固化和处理，其提高后续CMP步骤的硬度并降低介电常数。 在He处理期间，没有H 2 O 2或CH 4 O 3的损失。 然后用H 2 O 2等离子体处理低k电介质层，其将表面附近的一些Si-O和Si-CH 3键转化为Si-H键， 从而进一步降低介电常数并增加热稳定性，从而提高耐击穿性。 吸湿也减少。 该方法对于具有深亚微米基准规则的互连方案特别有用。 令人惊讶的是，从两种不同的等离子体处理获得的k值低于当执行两个He处理或两个H 2 N 2处理时。

公开(公告)号：US20060084279A1

公开(公告)日：2006-04-20

申请号：US10968199

申请日：2004-10-18

申请人： Hui Chang ,  Yung Lu ,  Li Li ,  Tien Bao ,  Chih Lin

发明人： Hui Chang ,  Yung Lu ,  Li Li ,  Tien Bao ,  Chih Lin

IPC分类号： H01L21/31

CPC分类号： H01L21/76835 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/31612 ,  H01L21/76807 ,  H01L21/76822

摘要： A damascene structure and method for forming the same in a multi-density dielectric insulating layer the method including providing a substrate; forming at least a first layer comprising silicon oxide according to a first process having a first density; forming at least a second layer comprising silicon oxide according to a second process over the first layer having a second density less than the first density; etching a damascene opening through a thickness portion of the at least a first and the at least a second layer; and, filling the damascene opening to form a metal filled damascene.

摘要翻译： 一种镶嵌结构及其在多密度介电绝缘层中的形成方法，所述方法包括提供基板; 根据具有第一密度的第一工艺形成至少包含氧化硅的第一层; 在所述第一层上形成至少包含根据第二工艺的氧化硅的第二层，所述第二层具有小于所述第一密度的第二密度; 蚀刻通过所述至少第一和所述至少第二层的厚度部分的镶嵌开口; 并填充镶嵌开口以形成金属填充的镶嵌。

公开(公告)号：US20050064698A1

公开(公告)日：2005-03-24

申请号：US10666354

申请日：2003-09-19

申请人： Hui-Lin Chang ,  Chung-Chi Ko ,  Tien Bao ,  Yun-Chen Lu

发明人： Hui-Lin Chang ,  Chung-Chi Ko ,  Tien Bao ,  Yun-Chen Lu

IPC分类号： H01L21/3105 ,  H01L21/312 ,  H01L21/316 ,  H01L21/4763 ,  H01L21/768 ,  H05H1/00 ,  H05H1/24

CPC分类号： H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3124 ,  H01L21/31633 ,  H01L21/76819 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76835

摘要： A method of lowering the dielectric constant of an organosilicon low k dielectric layer while improving the hardness and thermal stability is provided. A deposited layer of carbon doped oxide, HSQ, or MSQ is cured and treated with a He plasma which improves hardness for a subsequent CMP step and lowers the dielectric constant. There is no loss of H2O or CH4 during the He treatment. The low k dielectric layer is then treated with a H2 plasma which converts some of the Si—O and Si—CH3 bonds near the surface to Si—H bonds, thereby further lowering the dielectric constant and increasing thermal stability that improves breakdown resistance. Moisture uptake is also reduced. The method is especially useful for interconnect schemes with deep sub-micron ground rules. Surprisingly, the k value obtained from two different plasma treatments is lower than when two He treatments or two H2 treatment are performed.

摘要翻译： 提供降低有机硅低k电介质层的介电常数同时提高硬度和热稳定性的方法。 掺杂碳的氧化物，HSQ或MSQ的沉积层用He等离子体固化和处理，其提高后续CMP步骤的硬度并降低介电常数。 在他治疗期间，没有H2O或CH4的损失。 然后用H 2等离子体处理低k电介质层，其将表面附近的一些Si-O和Si-CH 3键转化为Si-H键，从而进一步降低介电常数并增加热稳定性，从而提高耐击穿性。 吸湿也减少。 该方法对于具有深亚微米基准规则的互连方案特别有用。 令人惊讶的是，从两种不同的等离子体处理获得的k值低于执行两个He处理或两个H2处理时。

公开(公告)号：US20100021294A1

公开(公告)日：2010-01-28

申请号：US12173157

申请日：2008-07-28

申请人： Tien-Bao YEH

发明人： Tien-Bao YEH

IPC分类号： F01D25/28 ,  F04D13/06 ,  F01D25/24

CPC分类号： F04D25/12

摘要： A fan structure is disclosed to include a fan holder holding a fan motor and a fan blade, a bottom cover frame, which has smoothly arched bottom wall, a horizontal mounting flange extending around the smoothly arched bottom wall and mounted in one frame sash of a light steel structure of a ceiling, a vertical connection flange connected to the top cover shell of the fan holder, a circular center opening corresponding to the fan blade, ventilation holes spaced around the circular center opening and a fence disposed above the circular center opening and surrounding the fan blade defining with the top cover shell of the fan holder a space for causing a gate effect during rotation of the fan blade, and a grille mounted in the circular center opening of the bottom cover shell for output of currents of air caused by the fan blade.

摘要翻译： 公开了一种风扇结构，其包括保持风扇电动机和风扇叶片的风扇架，底盖框架，其具有平滑的拱形底壁;围绕平滑拱形的底壁延伸的水平安装凸缘，并安装在一个框架框架中 天花板的轻钢结构，连接到风扇支架的顶盖壳体的垂直连接法兰，对应于风扇叶片的圆形中心开口，围绕圆形中心开口间隔开的通风孔和设置在圆形中心开口上方的围栏， 围绕与风扇保持架的顶盖壳体形成的风扇叶片，用于在风扇叶片旋转期间引起闸门效应的空间，以及安装在底盖壳体的圆形中心开口中的格栅，用于输出由 风扇叶片。

公开(公告)号：USD672449S1

公开(公告)日：2012-12-11

申请号：US29393816

申请日：2011-06-09

申请人： Tien-Bao Yeh

设计人： Tien-Bao Yeh