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公开(公告)号：US4630237A
公开(公告)日：1986-12-16
申请号：US759009
申请日：1985-07-24
申请人： Kenji Miura , Shigeru Nakajima , Kazushige Minegishi , Toshifumi Somatani , Takashi Morie , Tatsuo Baba
发明人： Kenji Miura , Shigeru Nakajima , Kazushige Minegishi , Toshifumi Somatani , Takashi Morie , Tatsuo Baba
IPC分类号： G11C17/08 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/112 , H01L27/115 , H01L29/78 , G11C11/40 , G11C13/00
CPC分类号： H01L29/7827 , H01L2924/0002 , Y10S257/903
摘要： A read-only memory has memory cells each with a vertical metal oxide semiconductor field effect transistor and a bit line. The vertical metal oxide semiconductor field effect transistor has a gate electrode serving as a word line, a source, a drain, and a vertical channel region between the source and drain constituted by first and second diffusion layers. The gate electrode is formed on a side wall of a trench, which has a pair of side walls substantially perpendicular to a major surface of a semiconductor substrate of a first conductivity type and an interconnecting bottom surface substantially perpendicular to the side wall surfaces. The first and second diffusion layers of a second conductivity type are formed in an upper portion of the semiconductor substrate and in a bottom of the trench, respectively. The bit lines are formed in a predetermined pattern. One of the first and second diffusion layers is connected to the bit line through a contact hole and the other of the first and second diffusion layers is used as a common current line. A method of manufacturing the read-only memory is also proposed.
摘要翻译： 只读存储器具有各自具有垂直金属氧化物半导体场效应晶体管和位线的存储单元。 垂直金属氧化物半导体场效应晶体管具有用作由第一和第二扩散层构成的源极和漏极之间的字线，源极，漏极和垂直沟道区的栅电极。 栅电极形成在沟槽的侧壁上，沟槽的侧壁具有基本上垂直于第一导电类型的半导体衬底的主表面的一对侧壁和基本上垂直于侧壁表面的互连底表面。 第二导电类型的第一和第二扩散层分别形成在半导体衬底的上部和沟槽的底部。 位线以预定图案形成。 第一和第二扩散层中的一个通过接触孔连接到位线，并且第一和第二扩散层中的另一个用作公共电流线。 还提出了制造只读存储器的方法。
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2.发明授权
公开(公告)号：US4683643A
公开(公告)日：1987-08-04
申请号：US756135
申请日：1985-07-16
IPC分类号： H01L29/417 , H01L29/78 , H01L21/385 , H01L21/388 , H01L21/40
CPC分类号： H01L29/7827 , Y10S148/168
摘要： A vertical metal oxide semiconductor field effect transistor has a trench substantially vertically formed in a major surface of a semiconductor substrate, a first conductive layer formed in a predetermined region including a side wall surface of the trench on a gate insulating film, lower and upper diffusion layers formed in the bottom of the trench and a surface layer of the semiconductor substrate, preferably a channel doped region formed in the semiconductor substrate between the upper and lower diffusion layers, and a second conductive layer formed in contact with the lower diffusion layer in the bottom of the trench and insulated from the first conductive layer so as to fill the trench. The first conductive layer serves as a gate electrode, and the diffusion layers serves as source/drain regions, respectively. A method of manufacturing the vertical MOSFET is also proposed.
摘要翻译： 垂直金属氧化物半导体场效应晶体管具有在半导体衬底的主表面上基本上垂直形成的沟槽，形成在包括栅极绝缘膜上的沟槽的侧壁表面的预定区域中的第一导电层，下部和上部扩散 形成在沟槽的底部的层和半导体衬底的表面层，优选地形成在上部和下部扩散层之间的半导体衬底中的沟道掺杂区域，以及形成在第二导电层中的下部扩散层 并且与第一导电层绝缘以便填充沟槽。 第一导电层用作栅电极，扩散层分别用作源/漏区。 还提出了制造垂直MOSFET的方法。
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3.发明授权
公开(公告)号：US4672410A
公开(公告)日：1987-06-09
申请号：US753283
申请日：1985-07-09
IPC分类号： H01L21/20 , H01L21/225 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L29/78 , H01L29/94 , H01L27/02 , H01L29/04 , H01L29/06
CPC分类号： H01L27/10864 , H01L21/2257 , H01L27/10841 , H01L29/7827 , H01L29/945
摘要： A semiconductor device has memory cells respectively located at intersections of bit and word lines arranged in a matrix form, each of the memory cells being constituted by a single insulated gate transistor and a single capacitor. One memory cell is formed in an element formation region defined by each of trenches arranged in a matrix form. The capacitor has an insulating film formed along part of a side wall surface of a trench formed in at least a direction of thickness of a semiconductor substrate and a conductive layer formed along the insulating film. The transistor has a gate insulating film adjacent to the capacitor and formed along a remaining portion of the side wall surface of the trench, a gate electrode formed along the gate insulating film, and a diffusion region formed in a major surface of the semiconductor substrate which is adjacent to the gate insulating film. The semicondcutor memory device further has an isolation region between two adjacent ones of the memory cells along two adjacent ones of the bit or word lines. A method of manufacturing the semiconductor is also proposed.
摘要翻译： 半导体器件具有分别位于以矩阵形式布置的位和字线的交点处的存储器单元，每个存储器单元由单个绝缘栅晶体管和单个电容器构成。 一个存储单元形成在由以矩阵形式布置的每个沟槽限定的元件形成区域中。 电容器具有沿至少沿着半导体衬底的厚度方向形成的沟槽的侧壁表面的一部分和沿绝缘膜形成的导电层形成的绝缘膜。 晶体管具有与电容器相邻的栅极绝缘膜，沿着沟槽的侧壁表面的剩余部分形成，沿着栅极绝缘膜形成的栅电极和形成在半导体衬底的主表面中的扩散区域 与栅极绝缘膜相邻。 半切割器存储器件还沿着位或字线中的两个相邻的存储器单元中的两个相邻存储单元之间具有隔离区。 还提出了制造半导体的方法。
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公开(公告)号：US4786953A
公开(公告)日：1988-11-22
申请号：US48702
申请日：1987-05-12
CPC分类号： H01L29/7827
摘要： A vertical metal oxide semiconductor field effect transistor has a trench substantially vertically formed in a major surface of a semiconductor substrate, a first conductive layer formed in a predetermined region including a side wall surface of the trench on a gate insulating film, lower and upper diffusion layers formed in the bottom of the trench and a surface layer of the semiconductor substrate, preferably a channel doped region formed in the semiconductor substrate between the upper and lower diffusion layers, and a second conductive layer formed in contact with the lower diffusion layer in the bottom of the trench and insulated from the first conductive layer so as to fill the trench. The first conductive layer serves as a gate electrode, and the diffusion layers serves as source/drain regions, respectively. A method of manufacturing the vertical MOSFET is also proposed.
摘要翻译： 垂直金属氧化物半导体场效应晶体管具有在半导体衬底的主表面上基本上垂直形成的沟槽，形成在包括栅极绝缘膜上的沟槽的侧壁表面的预定区域中的第一导电层，下部和上部扩散 形成在沟槽的底部的层和半导体衬底的表面层，优选地形成在上部和下部扩散层之间的半导体衬底中的沟道掺杂区域，以及形成在第二导电层中的下部扩散层 并且与第一导电层绝缘以便填充沟槽。 第一导电层用作栅电极，扩散层分别用作源/漏区。 还提出了制造垂直MOSFET的方法。
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