公开(公告)号：US20050008976A1

公开(公告)日：2005-01-13

申请号：US10869892

申请日：2004-06-18

申请人： Toshio Sakamizu ,  Hiroshi Fukuda ,  Hiroshi Shiraishi

发明人： Toshio Sakamizu ,  Hiroshi Fukuda ,  Hiroshi Shiraishi

IPC分类号： G03F7/032 ,  B08B3/00 ,  G03C5/00 ,  G03F7/004 ,  G03F7/32 ,  H01L21/027 ,  H01L21/32 ,  H01L21/3213

CPC分类号： H01L21/0273 ,  G03F7/0046 ,  G03F7/325 ,  H01L21/32 ,  H01L21/32139

摘要： To form a fine resist pattern without collapse, the invention patterns a resist by applying a resist composition to a substrate to form a resist film, exposing the resist film to radiation in a desired pattern, and developing the exposed resist film using supercritical carbon dioxide at 200 atm or lower. The resist composition mainly includes a polymer having a solubility parameter equal to or lower than that of supercritical carbon dioxide.

摘要翻译： 为了形成没有崩溃的精细抗蚀剂图案，本发明通过将抗蚀剂组合物施加到基底上以形成抗蚀剂膜来形成抗蚀剂，将抗蚀剂膜暴露于所需图案的辐射，并且使用超临界二氧化碳显影曝光的抗蚀剂膜 200 atm以下。 抗蚀剂组合物主要包括溶解度参数等于或低于超临界二氧化碳的聚合物。

公开(公告)号：US20060105273A1

公开(公告)日：2006-05-18

申请号：US10523247

申请日：2002-07-30

申请人： Hiroshi Fukuda ,  Yoshiyuki Yokoyama ,  Takashi Hattori ,  Toshio Sakamizu ,  Tadashi Arai ,  Hiroshi Shiraishi

发明人： Hiroshi Fukuda ,  Yoshiyuki Yokoyama ,  Takashi Hattori ,  Toshio Sakamizu ,  Tadashi Arai ,  Hiroshi Shiraishi

IPC分类号： G03C5/00

CPC分类号： G03F7/0382 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/0755 ,  G03F7/0757 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76808 ,  H01L27/10

摘要： There is a problem in that when the demand accuracy with respect to a semiconductor pattern dimension comes close to a resist molecule size with miniaturization, the device performance is deteriorated due to edge roughness of a resist pattern to exert a bad influence on the system performance. The present invention overcomes the problem by the procedure in which super-molecules which are small in dimension as compared with the conventional polymers are used as main components, the reaction number required for the change of molecule solubility is made constant and as large as possible, and an acid generator is made clathrate or combinatory n super molecules to make an acid catalyst concentration large. As a result, it is possible to form a pattern of molecular accuracy with high productivity even with respect to the pattern dimension less than 50 nm, thereby realizing the high performance system.

摘要翻译： 存在的问题在于，当半导体图案尺寸的需求精度接近于小型化的抗蚀剂分子尺寸时，由于抗蚀剂图案的边缘粗糙度而导致器件性能劣化，从而对系统性能产生不良影响。 本发明通过使用与常规聚合物相比尺寸小的超分子作为主要成分的方法克服了该问题，使分子溶解度变化所需的反应数量保持恒定且尽可能大， 使酸发生剂成为包合物或组合的超分子，使酸催化剂浓度变大。 结果，即使相对于图案尺寸小于50nm，也可以以高生产率形成分子精度图案，从而实现高性能系统。

公开(公告)号：US07642145B2

公开(公告)日：2010-01-05

申请号：US10523247

申请日：2002-07-30

申请人： Hiroshi Fukuda ,  Yoshiyuki Yokoyama ,  Takashi Hattori ,  Toshio Sakamizu ,  Tadashi Arai ,  Hiroshi Shiraishi

发明人： Hiroshi Fukuda ,  Yoshiyuki Yokoyama ,  Takashi Hattori ,  Toshio Sakamizu ,  Tadashi Arai ,  Hiroshi Shiraishi

IPC分类号： H01L21/8238

CPC分类号： G03F7/0382 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/0755 ,  G03F7/0757 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76808 ,  H01L27/10

摘要： There is a problem in that when the demand accuracy with respect to a semiconductor pattern dimension comes close to a resist molecule size with miniaturization, the device performance is deteriorated due to edge roughness of a resist pattern to exert a bad influence on the system performance. The present invention overcomes the problem by the procedure in which super-molecules which are small in dimension as compared with the conventional polymers are used as main components, the reaction number required for the change of molecule solubility is made constant and as large as possible, and an acid generator is made clathrate or combinatory n super molecules to make an acid catalyst concentration large. As a result, it is possible to form a pattern of molecular accuracy with high productivity even with respect to the pattern dimension less than 50 nm, thereby realizing the high performance system.

摘要翻译： 存在的问题在于，当半导体图案尺寸的需求精度接近于小型化的抗蚀剂分子尺寸时，由于抗蚀剂图案的边缘粗糙度而导致的器件性能劣化，从而对系统性能产生不良影响。 本发明通过使用与常规聚合物相比尺寸小的超分子作为主要成分的方法克服了该问题，使分子溶解度变化所需的反应数量保持恒定且尽可能大， 使酸发生剂成为包合物或组合的超分子，使酸催化剂浓度变大。 结果，即使相对于图案尺寸小于50nm，也可以以高生产率形成分子精度图案，从而实现高性能系统。

公开(公告)号：US06319649B1

公开(公告)日：2001-11-20

申请号：US09024873

申请日：1998-02-17

申请人： Koji Kato ,  Masahiro Hashimoto ,  Michiaki Hashimoto ,  Toshio Sakamizu ,  Hiroshi Shiraishi

发明人： Koji Kato ,  Masahiro Hashimoto ,  Michiaki Hashimoto ,  Toshio Sakamizu ,  Hiroshi Shiraishi

IPC分类号： G03F7021

CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/106 ,  Y10S430/111

摘要： A chemically amplified photosensitive resin composition containing a first compound forming an acid by irradiation of actinic ray and a second compound that changes the solubility to an aqueous alkali solution with acid-catalyzed reaction wherein an ion dissociative compound having the composition represented by the general formula (1) or (2), as well a method of forming a resist pattern using the composition are disclosed, the formulae being expressed by: where each of R2, R3 and R4 represents hydrogen, and an alkyl or aryl group of 1 to 7 carbon atoms, at least one of R1, R2, R3 and R4 represents hydrogen, Y1 represents chlorine, bromine, iodine, carbonate group of 1 to 7 carbon atoms or sulfonate group of 1 to 7 carbon atoms, and

摘要翻译： 一种化学放大型光敏树脂组合物，其含有通过光化射线照射形成酸的第一化合物和通过酸催化反应改变其对碱性水溶液的溶解度的第二化合物，其中具有由通式表示的组成的离子解离化合物（ 1）或（2），以及使用该组合物形成抗蚀剂图案的方法，其公式表示为：其中R2，R3和R4各自表示氢，并且具有1至7个碳原子的烷基或芳基 R1，R2，R3和R4中的至少一个表示氢，Y1表示氯，溴，碘，1〜7个碳原子的碳酸酯基或1〜7个碳原子的磺酸酯基，

公开(公告)号：US07005216B2

公开(公告)日：2006-02-28

申请号：US10299692

申请日：2002-11-20

申请人： Hiroshi Shiraishi ,  Sonoko Migitaka ,  Takashi Hattori ,  Tadashi Arai ,  Toshio Sakamizu

发明人： Hiroshi Shiraishi ,  Sonoko Migitaka ,  Takashi Hattori ,  Tadashi Arai ,  Toshio Sakamizu

IPC分类号： G03F9/00

CPC分类号： G03F1/56

摘要： Providing a photo mask for KrF excimer laser lithography, which can be produced with high accuracy and low defects in a smaller number of steps. A photo mask for KrF excimer laser lithography according to the present invention is one in which a resist pattern 18 efficiently absorbing a KrF excimer laser light (wavelength: about 248 nm) is formed directly on a quartz substrate 10. The resist pattern 18 comprises: an aqueous alkali-soluble resin having a high light shielding property, which incorporates a naphthol structure having at least one hydroxyl group bound to a naphthalene nucleus; or a radiation sensitive resist having, as a main component, an aqueous alkali-soluble resin containing a derivative of the above-mentioned aqueous alkali-soluble resin as a resin matrix.

摘要翻译： 提供KrF准分子激光光刻的光掩模，可以在较小数量的步骤中以高精度和低缺陷生产。 根据本发明的用于KrF准分子激光光刻的光掩模是其中直接在石英衬底10上形成有效吸收KrF准分子激光（波长：约248nm）的抗蚀剂图案18的光掩模。 抗蚀剂图案18包括：具有高遮光性的碱性水溶性树脂，其包含具有至少一个与萘核结合的羟基的萘酚结构; 或具有作为主要成分的含有上述碱溶性水溶性树脂的衍生物的碱溶性树脂作为树脂基质的辐射敏感性抗蚀剂。

公开(公告)号：US5324550A

公开(公告)日：1994-06-28

申请号：US929196

申请日：1992-08-12

申请人： Hidenori Yamaguchi ,  Fumio Murai ,  Norio Hasegawa ,  Toshio Sakamizu ,  Hiroshi Shiraishi

发明人： Hidenori Yamaguchi ,  Fumio Murai ,  Norio Hasegawa ,  Toshio Sakamizu ,  Hiroshi Shiraishi

IPC分类号： G03F7/004 ,  G03F7/022 ,  G03F7/09 ,  G03F7/11 ,  B05D3/06 ,  G03C5/00 ,  G03C5/18 ,  G03C5/26

CPC分类号： G03F7/11 ,  G03F7/09 ,  G03F7/0045 ,  G03F7/022

摘要： In forming a resist pattern by forming a resist film containing an acid generator on a spin on glass film or a silicon resin film and subsequent exposure of light, an inhomogeneous distribution of an acid in the resist film caused by the spin on glass film or the silicon resin film is remedied by adding an acid generator beforehand into the spin on glass film or the silicon resin film or by using an organic polymer containing an acid generator. As a result, a profile defect in a cross section of the resist pattern caused by inhomogeneous acid distribution is prevented and the resist pattern has a rectangular cross-sectional shape.

摘要翻译： 在通过在玻璃膜或硅树脂膜上的自旋上形成含有酸发生剂的抗蚀剂膜并随后曝光的方式形成抗蚀剂图案时，由于在玻璃膜上旋转引起的抗蚀剂膜中的酸不均匀分布 通过预先将酸产生剂添加到玻璃膜或硅树脂膜上的旋涂中或通过使用含有酸发生剂的有机聚合物来补救硅树脂膜。 结果，防止由不均匀的酸分布引起的抗蚀剂图案的横截面中的轮廓缺陷，并且抗蚀剂图案具有矩形横截面形状。

公开(公告)号：US5350485A

公开(公告)日：1994-09-27

申请号：US9012

申请日：1993-01-26

申请人： Hiroshi Shiraishi ,  Takashi Soga ,  Fumio Murai ,  Toshio Sakamizu ,  Nobuaki Hayashi

发明人： Hiroshi Shiraishi ,  Takashi Soga ,  Fumio Murai ,  Toshio Sakamizu ,  Nobuaki Hayashi

IPC分类号： G03F7/038 ,  G03F7/039 ,  G03F7/26 ,  G03F7/38 ,  H01L21/027 ,  H01L21/3213 ,  H01L21/00

CPC分类号： G03F7/26 ,  G03F7/38 ,  H01L21/0277 ,  H01L21/0278 ,  H01L21/32139

摘要： A lithographic method for forming a mask pattern is useful for etching wiring or insulator layers on a substrate. A catalyst generation layer and a latent image formation layer are formed on the target layer prior to application of actinic radiation to activate a catalyst in the catalyst generation layer in accordance with a predetermined pattern. The activated catalyst diffuses into the latent image formation layer to form a latent image, which then serves as a mask pattern for etching the catalyst generation layer, latent image formation layer and target layer. The catalyst generation layer may be formed prior to the latent image formation layer, or vice versa. In another embodiment, the catalyst generation layer is formed prior to the radiation step, but the latent image formation layer is formed after application of the actinic radiation.

摘要翻译： 用于形成掩模图案的光刻方法对于蚀刻衬底上的布线或绝缘体层是有用的。 在施加光化辐射之前，在靶层上形成催化剂生成层和潜像形成层，以根据预定图案活化催化剂生成层中的催化剂。 活化的催化剂扩散到潜像形成层中以形成潜像，然后用作蚀刻催化剂生成层，潜像形成层和目标层的掩模图案。 催化剂生成层可以在潜像形成层之前形成，反之亦然。 在另一个实施方案中，在辐射步骤之前形成催化剂生成层，但是在施加光化辐射之后形成潜像形成层。

公开(公告)号：US5328807A

公开(公告)日：1994-07-12

申请号：US711954

申请日：1991-06-07

申请人： Toshihiko Tanaka ,  Norio Hasegawa ,  Toshiaki Yamanaka ,  Akira Imai ,  Hiroshi Shiraishi ,  Takumi Ueno ,  Hiroshi Fukuda

发明人： Toshihiko Tanaka ,  Norio Hasegawa ,  Toshiaki Yamanaka ,  Akira Imai ,  Hiroshi Shiraishi ,  Takumi Ueno ,  Hiroshi Fukuda

IPC分类号： G03F1/34 ,  G03F7/20 ,  G03C5/00 ,  G03F9/00

CPC分类号： G03F1/34 ,  G03F7/2022

摘要： A comb-like or dot-like phase shifter pattern is added to a phase shifter used in phase shifting mask technology, which is then exposed onto a wafer. This enables the formation of extremely fine line patterns or space patterns having widths different from each other simultaneously. Further, when two reticles are disposed such that phase shifter patterns disposed therein intersect each other and are exposed consecutively onto a wafer, a fine hole pattern or dot pattern can be formed at a position where the phase shifter patterns intersect each other.

摘要翻译： 将梳状或点状移相器图案添加到用于相移掩模技术的移相器中，然后将其暴露在晶片上。 这使得能够同时形成彼此宽度不同的极细线图案或空间图案。 此外，当两个掩模版被布置成使得设置在其中的移相器图案彼此相交并且连续地暴露在晶片上时，可以在移相器图案彼此相交的位置处形成细孔图案或点图案。

公开(公告)号：US20140308685A1

公开(公告)日：2014-10-16

申请号：US14342996

申请日：2012-09-06

申请人： Kenji Izuhara ,  Shoichiro Ohta ,  Kazuhiko Arima ,  Hiroshi Shiraishi ,  Shoichi Suzuki ,  Tomoaki Hoshino ,  Yoshinori Azuma ,  Junya Ono

发明人： Kenji Izuhara ,  Shoichiro Ohta ,  Kazuhiko Arima ,  Hiroshi Shiraishi ,  Shoichi Suzuki ,  Tomoaki Hoshino ,  Yoshinori Azuma ,  Junya Ono

IPC分类号： G01N33/68 ,  C07K16/18

CPC分类号： G01N33/6893 ,  C07K16/18 ,  C07K2317/14 ,  C07K2317/33 ,  G01N2333/47 ,  G01N2800/12

摘要： The present invention provides a method and a reagent for measuring periostin contained in a sample with improved accuracy, a method for improving accuracy in measurement of periostin, and a method of testing for pulmonary fibrosis or interstitial pneumonia with improved accuracy. The antibody of the present invention binds to at least one region selected from the group consisting of an EMI region, an R1 region, an R2 region, and an R3 region of periostin or a cleavage product thereof. The method and the reagent for measuring periostin and the method for improving accuracy in periostin measurement of the present invention is characterized by detecting at least one region selected from the group consisting of an EMI region, an R1 region, an R2 region, and an R3 region of periostin. The method of testing for pulmonary fibrosis or interstitial pneumonia of the present invention includes the steps of a) measuring the amount or concentration of periostin in a sample derived from a subject, which measuring includes detecting at least one region selected from the group consisting of an EMI region, an R1 region, an R2 region, and an R3 region of periostin and b) comparing the amount or concentration of the periostin in the sample derived from the subject with an amount or concentration of periostin in a sample derived from a living body not suffering from pulmonary fibrosis and interstitial pneumonia.

摘要翻译： 本发明提供了一种精度更高的用于测定样品中的骨膜素的方法和试剂，提高骨膜素测定精度的方法以及以更高的精度测定肺纤维化或间质性肺炎的方法。 本发明的抗体与选自由EMI区域，R1区域，R2区域和骨膜素的R3区域或其切割产物组成的组中的至少一个区域结合。 用于测定骨膜素的方法和试剂以及本发明的骨膜素测定精度的提高方法的特征在于，检测从由EMI区域，R1区域，R2区域和R3组成的组中选择的至少一个区域 骨膜素的区域 本发明的肺纤维化或间质性肺炎的检测方法包括以下步骤：a）测量衍生自受试者的样品中骨膜素的量或浓度，所述测量包括检测至少一个选自以下的区域： EMI区域，R1区域，R2区域和骨膜素的R3区域，以及b）将源自受试者的样品中骨膜素的量或浓度与衍生自活体的样品中骨膜素的量或浓度进行比较 不患肺纤维化和间质性肺炎。

公开(公告)号：US07659747B2

公开(公告)日：2010-02-09

申请号：US12178219

申请日：2008-07-23

申请人： Hiroshi Shiraishi ,  Tetsuya Hayashi ,  Tomokazu Higuchi

发明人： Hiroshi Shiraishi ,  Tetsuya Hayashi ,  Tomokazu Higuchi

IPC分类号： H03K19/094

CPC分类号： H03K19/00384

摘要： A transmission device including: a driver unit which generates an output signal having an amplitude by a resistance division of a power-supply voltage; and an output-amplitude correction unit which generates current according to variation in the power-supply voltage, and corrects the amplitude by using the current.

摘要翻译： 一种传输装置，包括：驱动器单元，其通过电源电压的电阻划分产生具有振幅的输出信号; 以及输出幅度校正单元，其根据电源电压的变化产生电流，并且通过使用电流来校正振幅。