公开(公告)号：US5945008A

公开(公告)日：1999-08-31

申请号：US534042

申请日：1995-09-26

申请人： Toshiro Kisakibaru ,  Akira Kojima ,  Yasushi Kato ,  Isao Honbori ,  Satoshi Bannai ,  Tomohiro Chiba ,  Toshitaka Kawashima

发明人： Toshiro Kisakibaru ,  Akira Kojima ,  Yasushi Kato ,  Isao Honbori ,  Satoshi Bannai ,  Tomohiro Chiba ,  Toshitaka Kawashima

IPC分类号： H01J37/32 ,  H05H1/00

CPC分类号： H01J37/32623 ,  H01J37/32697

摘要： The present invention provides a method for plasma control, in which an electric field is generated in the direction perpendicular to the surface of an object to be processed in plasma atmosphere generated in a processing chamber and another electric field is generated in the direction parallel to the surface, and the direction of ion or electron in plasma atmosphere is controlled by controlling the composite electric field composed of both the electric fields. The invention provides also an apparatus for plasma control provided with a perpendicular electric field generating means for generating an electric field in the direction perpendicular to the surface of the object, and a parallel electric field generating means for generating an electric field in the direction parallel to the surface of the object.

摘要翻译： 本发明提供了一种等离子体控制方法，其中在与处理室中产生的等离子体气氛中的待处理物体的表面垂直的方向上产生电场，并且在平行于该处理室的方向上产生另一个电场 表面，并且通过控制由两个电场组成的复合电场来控制等离子体气氛中的离子或电子的方向。 本发明还提供了一种用于等离子体控制的装置，其具有用于在垂直于物体表面的方向上产生电场的垂直电场产生装置，以及平行电场产生装置，用于在平行于该物体的方向上产生电场 对象的表面。

公开(公告)号：US4720661A

公开(公告)日：1988-01-19

申请号：US776971

申请日：1985-09-12

申请人： Toshiro Kisakibaru ,  Tsuguo Gotoh ,  Kazunori Ohuchi ,  Hirosuke Ohho

发明人： Toshiro Kisakibaru ,  Tsuguo Gotoh ,  Kazunori Ohuchi ,  Hirosuke Ohho

IPC分类号： H02P27/06 ,  B65H23/195 ,  B65H23/198 ,  B65H59/38 ,  H02P7/298 ,  H02P7/06

CPC分类号： B65H23/1955

摘要： Hitherto, in the tension control for a reel, it has been impossible to exceed the tension controlling range of about 1:10 which is determined by the tension controlling range of a single DC motor, so that for the reel which requires a tension controlling range over 1:10, a plurality of DC motors have been combined and used or the gear ratio between the reel and the DC motor has been changed to date.In this invention, attention is paid to the fact that undesirable phenomena such as a change in characteristic due to an armature reaction, and deterioration of rectification which are caused by setting the field system to a low level can be sufficiently suppressed by limiting the setting and controlling range to the low region of an armature current. The field system is set to a low level so that the ratio of the field magnetic flux to the diameter of the coil becomes a value lower than the maximum value and also so that the upper limit of the operating armature current which is practically applied is set low, thereby making it possible to perform stable tension control within a low tension range which has not been possible heretofore by a single DC motor.

摘要翻译： PCT No.PCT / JP85 / 00012 Sec。 371日期：1985年9月12日 102（e）1985年9月12日PCT PCT 1月14日，PCT PCT。 第WO85 / 03061号公报 1985年7月18日。迄今为止，在卷轴的张力控制中，不可能超过由单个DC电机的张力控制范围确定的约1:10的张力控制范围，使得对于 卷筒需要1：10以上的张力控制范围，已经组合使用多个直流电动机，或者直到现在已经改变了卷轴和直流电动机之间的传动比。 在本发明中，注意到通过限制设定和充分的抑制来充分地抑制诸如由于电枢反应引起的特性变化和整流的恶化等不良现象， 控制到电枢电流低区域的范围。 励磁系统设定为低电平，使得励磁磁通与线圈直径的比值成为低于最大值的值，并且使得实际应用的工作电枢电流的上限被设定 低，从而可以在单个DC电动机以前无法实现的低张力范围内进行稳定的张力控制。

公开(公告)号：US06670290B2

公开(公告)日：2003-12-30

申请号：US09978614

申请日：2001-10-16

申请人： Toshiro Kisakibaru ,  Isao Honbori ,  Yasushi Kato ,  Toshikazu Suzuki ,  Hirohisa Koriyama ,  Hayato Iwamoto ,  Hitoshi Abe

发明人： Toshiro Kisakibaru ,  Isao Honbori ,  Yasushi Kato ,  Toshikazu Suzuki ,  Hirohisa Koriyama ,  Hayato Iwamoto ,  Hitoshi Abe

IPC分类号： H01L2131

CPC分类号： H01L21/67017 ,  Y10S438/907

摘要： A manufacturing apparatus for a semiconductor device comprises: a clean room for installing a plurality of semiconductor manufacturing and processing apparatuses; an external air cleaning device connected to a supply port of the clean room for supplying a cleaned-up outside air into the clean room; a common air duct section installed in the clean room; a first air cleaning and ventilating means connected to said common air duct section for cleaning and ventilating a part of the cleaned-up outside air to the common air duct section; individual air duct section branched off from the common air duct section and connected to each of said semiconductor manufacturing and processing apparatuses; and a second air cleaning and ventilating means interposed between the individual air duct section and each of the semiconductor manufacturing and processing apparatuses for cleaning and ventilating the air to be supplied to each of the semiconductor manufacturing and processing apparatuses.

公开(公告)号：US4947088A

公开(公告)日：1990-08-07

申请号：US143807

申请日：1988-01-14

申请人： Toshiro Kisakibaru ,  Tsuguo Gotoh ,  Kazunori Ohuchi

发明人： Toshiro Kisakibaru ,  Tsuguo Gotoh ,  Kazunori Ohuchi

IPC分类号： H02P27/06 ,  B65H23/195 ,  B65H23/198 ,  B65H59/38 ,  H02P7/298

CPC分类号： B65H23/1955

摘要： Hitherto, in the tension control for a reel, it is impossible to exceed the tension controlling range of about 1:10 which is determined by the tension controlling range of a single DC motor, so that for the reel which requires a tension controlling range over 1:10, a plurality of DC motors have been combined and used or a gear ratio between the reel and the DC motor has been changed for many years so far.In this invention an attention is paid to the fact such that the unpreferable phenomena such as a change in characteristic due to an armature reaction, and deterioration of rectification or the like which are caused by setting the field system to a low level can be fairly suppressed by limiting the setting and controlling range to a low region of an armature current. The field system is set to a low level so that a ratio of a field magnetic flux to a diameter of a coil becomes a value lower than the maximum value and also the upper limit of an operating armature current which is practically applied is set to be low, thereby making it possible to perform the stable tension control within a low tension range which could not be realized so far by a single DC motor.

公开(公告)号：US06777355B2

公开(公告)日：2004-08-17

申请号：US10718392

申请日：2003-11-20

申请人： Toshiro Kisakibaru ,  Isao Honbori ,  Yasushi Kato ,  Toshikazu Suzuki ,  Hirohisa Koriyama ,  Hayato Iwamoto ,  Hitoshi Abe

发明人： Toshiro Kisakibaru ,  Isao Honbori ,  Yasushi Kato ,  Toshikazu Suzuki ,  Hirohisa Koriyama ,  Hayato Iwamoto ,  Hitoshi Abe

IPC分类号： H01L2131

CPC分类号： H01L21/67017 ,  Y10S438/907

摘要： A manufacturing apparatus for a semiconductor device comprises: a clean room for installing a plurality of semiconductor manufacturing and processing apparatuses; an external air cleaning device connected to a supply port of the clean room for supplying a cleaned-up outside air into the clean room; a common air duct section installed in the clean room; a first air cleaning and ventilating means connected to said common air duct section for cleaning and ventilating a part of the cleaned-up outside air to the common air duct section; individual air duct section branched off from the common air duct section and connected to each of said semiconductor manufacturing and processing apparatuses; and a second air cleaning and ventilating means interposed between the individual air duct section and each of the semiconductor manufacturing and processing apparatuses for cleaning and ventilating the air to be supplied to each of the semiconductor manufacturing and processing apparatuses.

摘要翻译： 一种用于半导体器件的制造设备，包括：用于安装多个半导体制造和处理设备的洁净室; 连接到洁净室的供给口的外部空气净化装置，用于将净化后的外部空气供给到净化室内; 安装在洁净室内的通风道; 连接到所述公共空气管道部分的第一空气净化和通风装置，用于将一部分净化的外部空气清洁和通风到共用空气管道部分; 单独的空气管道部分从公共空气管道部分分支并连接到每个所述半导体制造和处理装置; 以及第二空气净化和通风装置，其插入在单独的空气管道部分和用于清洁和通风供给到每个半导体制造和处理设备的空气的每个半导体制造和处理设备之间。

公开(公告)号：US06255220B1

公开(公告)日：2001-07-03

申请号：US09348923

申请日：1999-07-06

申请人： Toshiro Kisakibaru ,  Akira Kojima ,  Yasushi Kato ,  Isao Honbori ,  Satoshi Bannai ,  Tomohiro Chiba ,  Toshitaka Kawashima

发明人： Toshiro Kisakibaru ,  Akira Kojima ,  Yasushi Kato ,  Isao Honbori ,  Satoshi Bannai ,  Tomohiro Chiba ,  Toshitaka Kawashima

IPC分类号： H01L21302

CPC分类号： H01J37/32623 ,  H01J37/32697

摘要： The present invention provides a method for plasma control, in which an electric field is generated in the direction perpendicular to the surface of an object to be processed in plasma atmosphere generated in a processing chamber and another electric field is generated in the direction parallel to the surface, and the direction of ion or electron in plasma atmosphere is controlled by controlling the composite electric field composed of both the electric fields. The invention provides also an apparatus for plasma control provided with a perpendicular electric field generating means for generating an electric field in the direction perpendicular to the surface of the object, and a parallel electric field generating means for generating an electric field in the direction parallel to the surface of the object.

摘要翻译： 本发明提供了一种等离子体控制方法，其中在与处理室中产生的等离子体气氛中的待处理物体的表面垂直的方向上产生电场，并且在平行于该处理室的方向上产生另一个电场 表面，并且通过控制由两个电场组成的复合电场来控制等离子体气氛中的离子或电子的方向。 本发明还提供了一种用于等离子体控制的装置，其具有用于在垂直于物体表面的方向上产生电场的垂直电场产生装置，以及平行电场产生装置，用于在平行于该物体的方向上产生电场 对象的表面。

公开(公告)号：US5928077A

公开(公告)日：1999-07-27

申请号：US918061

申请日：1997-08-25

申请人： Toshiro Kisakibaru

发明人： Toshiro Kisakibaru

IPC分类号： F24F7/06 ,  F24F3/16 ,  H01L21/02 ,  H01L21/677

CPC分类号： H01L21/67727 ,  F24F3/161 ,  Y10S414/14

摘要： There is provided a clean room for manufacturing of semiconductor device which has further enhanced the transferring capability responding to the request for short Turn Around Time. In this clean room for manufacturing of semiconductor device, a manufacturing facility comprising various manufacturing apparatuses and measuring apparatuses for manufacturing semiconductor device is arranged in the manufacturing space on the floor, the clean air is blown from the ceiling side of the manufacturing space, the air is then returned to the area under the floor via the ventilating aperture formed at the floor for circulating the air. The transfer route of the transferring system for transferring precursors of semiconductor device between each manufacturing facility is provided in the air returning area under the floor provided to return the air in the manufacturing space. Feeding of the precursors between the transferring system and manufacturing space can be executed through the aperture formed on the floor.

摘要翻译： 提供了一种用于制造半导体器件的洁净室，其进一步增强了响应于短周转时间的请求的传送能力。 在这种用于制造半导体器件的洁净室中，包括各种制造装置的制造设备和用于制造半导体器件的测量装置布置在地板上的制造空间中，清洁空气从制造空间的天花板侧吹送，空气 然后通过形成在地板上的通风孔返回到地板下面的区域以使空气循环。 用于在每个制造设备之间传送半导体器件的前体的传送系统的传送路径设置在设置在返回制造空间中的空气的地板下方的返回空气区域中。 通过形成在地板上的孔可以在转印系统和制造空间之间进给前体。

公开(公告)号：US5431769A

公开(公告)日：1995-07-11

申请号：US140455

申请日：1993-10-25

申请人： Toshiro Kisakibaru ,  Akira Kojima ,  Takayuki Fukunaga ,  Yoshinori Hata ,  Yasushi Kato ,  Isao Honbori ,  Tomohide Jozaki ,  Hirohisa Kooriyama

发明人： Toshiro Kisakibaru ,  Akira Kojima ,  Takayuki Fukunaga ,  Yoshinori Hata ,  Yasushi Kato ,  Isao Honbori ,  Tomohide Jozaki ,  Hirohisa Kooriyama

IPC分类号： C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/00

CPC分类号： H01J37/32862 ,  H01J37/32623 ,  H01J37/32678 ,  H01J37/32688

摘要： A plasma treatment method and system allowing the plasma intensity to be controllably distributed perpendicularly to the inner wall and ensuring effective and uniform treatment in the case of executing plasma cleaning, plasma CVD, RIE or the like. In the plasma treatment where plasma is generated within a chamber 1 for plasma treatment, magnetic field 31 is applied perpendicularly to the inner wall of the chamber to produce plasma whose intensity is directed perpendicularly to the inner wall of the chamber or in parallel with the surface to be treated. Further, the magnetic filed 31 rendered into a revolving field 32 may be applied to rotate the plasma to accomplish a uniform and effective treatment.

摘要翻译： 在等离子体清洗，等离子体CVD，RIE等的情况下，等离子体处理方法和等离子体强度可以与内壁垂直地可控制地分布，确保有效且均匀的处理。 在用于等离子体处理的室1内产生等离子体的等离子体处理中，垂直于室的内壁施加磁场31，产生强度垂直于室内壁或与表面平行的等离子体 待处理 此外，可以施加提供到旋转场32中的磁场31以旋转等离子体以实现均匀且有效的处理。