公开(公告)号：US06777355B2

公开(公告)日：2004-08-17

申请号：US10718392

申请日：2003-11-20

申请人： Toshiro Kisakibaru ,  Isao Honbori ,  Yasushi Kato ,  Toshikazu Suzuki ,  Hirohisa Koriyama ,  Hayato Iwamoto ,  Hitoshi Abe

发明人： Toshiro Kisakibaru ,  Isao Honbori ,  Yasushi Kato ,  Toshikazu Suzuki ,  Hirohisa Koriyama ,  Hayato Iwamoto ,  Hitoshi Abe

IPC分类号： H01L2131

CPC分类号： H01L21/67017 ,  Y10S438/907

摘要： A manufacturing apparatus for a semiconductor device comprises: a clean room for installing a plurality of semiconductor manufacturing and processing apparatuses; an external air cleaning device connected to a supply port of the clean room for supplying a cleaned-up outside air into the clean room; a common air duct section installed in the clean room; a first air cleaning and ventilating means connected to said common air duct section for cleaning and ventilating a part of the cleaned-up outside air to the common air duct section; individual air duct section branched off from the common air duct section and connected to each of said semiconductor manufacturing and processing apparatuses; and a second air cleaning and ventilating means interposed between the individual air duct section and each of the semiconductor manufacturing and processing apparatuses for cleaning and ventilating the air to be supplied to each of the semiconductor manufacturing and processing apparatuses.

摘要翻译： 一种用于半导体器件的制造设备，包括：用于安装多个半导体制造和处理设备的洁净室; 连接到洁净室的供给口的外部空气净化装置，用于将净化后的外部空气供给到净化室内; 安装在洁净室内的通风道; 连接到所述公共空气管道部分的第一空气净化和通风装置，用于将一部分净化的外部空气清洁和通风到共用空气管道部分; 单独的空气管道部分从公共空气管道部分分支并连接到每个所述半导体制造和处理装置; 以及第二空气净化和通风装置，其插入在单独的空气管道部分和用于清洁和通风供给到每个半导体制造和处理设备的空气的每个半导体制造和处理设备之间。

公开(公告)号：US06670290B2

公开(公告)日：2003-12-30

申请号：US09978614

申请日：2001-10-16

申请人： Toshiro Kisakibaru ,  Isao Honbori ,  Yasushi Kato ,  Toshikazu Suzuki ,  Hirohisa Koriyama ,  Hayato Iwamoto ,  Hitoshi Abe

发明人： Toshiro Kisakibaru ,  Isao Honbori ,  Yasushi Kato ,  Toshikazu Suzuki ,  Hirohisa Koriyama ,  Hayato Iwamoto ,  Hitoshi Abe

IPC分类号： H01L2131

CPC分类号： H01L21/67017 ,  Y10S438/907

摘要： A manufacturing apparatus for a semiconductor device comprises: a clean room for installing a plurality of semiconductor manufacturing and processing apparatuses; an external air cleaning device connected to a supply port of the clean room for supplying a cleaned-up outside air into the clean room; a common air duct section installed in the clean room; a first air cleaning and ventilating means connected to said common air duct section for cleaning and ventilating a part of the cleaned-up outside air to the common air duct section; individual air duct section branched off from the common air duct section and connected to each of said semiconductor manufacturing and processing apparatuses; and a second air cleaning and ventilating means interposed between the individual air duct section and each of the semiconductor manufacturing and processing apparatuses for cleaning and ventilating the air to be supplied to each of the semiconductor manufacturing and processing apparatuses.

公开(公告)号：US20090211610A1

公开(公告)日：2009-08-27

申请号：US12368662

申请日：2009-02-10

申请人： Yasushi Honbe ,  Hitoshi Abe ,  Hayato Iwamoto

发明人： Yasushi Honbe ,  Hitoshi Abe ,  Hayato Iwamoto

IPC分类号： B08B3/08

CPC分类号： B08B3/08 ,  C11D7/08 ,  C11D11/0047 ,  G03F7/423 ,  H01L21/02057 ,  H01L21/31138

摘要： Disclosed herein is a method for treating a substrate wherein a chemical is fed to a surface of the substrate, the method including the steps of: initially feeding a liquid whose electric conductivity is lower than the chemical to a surface of the substrate so as to wet at least a region where the chemical is to be discharged, and discharging the chemical to the region to treat the surface of the substrate with the discharged chemical.

摘要翻译： 本文公开了一种处理基材的方法，其中将化学品进料到基材的表面，该方法包括以下步骤：首先将导电性低于化学品的液体供给到基材的表面以使其湿润 至少要排出化学品的区域，并且将化学品排放到该区域以用排出的化学品处理衬底的表面。

公开(公告)号：US08038798B2

公开(公告)日：2011-10-18

申请号：US12124555

申请日：2008-05-21

申请人： Hayato Iwamoto ,  Noriaki Adachi

发明人： Hayato Iwamoto ,  Noriaki Adachi

IPC分类号： C23G1/02

CPC分类号： H01L21/67057 ,  C11D7/06 ,  C11D7/08 ,  C11D11/0047 ,  C11D11/0064 ,  H01L21/02052 ,  H01L21/67253 ,  H01L22/14 ,  Y10S134/902

摘要： A substrate cleaning apparatus is capable of individually setting a threshold value for use in making a check of a resistivity during a rinsing process on a recipe setting screen in each process step. Thus, by setting each threshold value depending on the type of liquid chemical to be used immediately before the rinsing process, the substrate cleaning apparatus can use an optimum threshold value during the rinsing process in each process step to make a check of the resistivity. This allows the proper completion of the rinsing process in each process step.

摘要翻译： 基板清洁装置能够在每个处理步骤中在配方设置屏幕上单独设置用于在冲洗过程中检查电阻率的阈值。 因此，通过根据在冲洗处理之前立即使用的液体化学品的类型设定每个阈值，基板清洁装置可以在每个处理步骤中的漂洗处理期间使用最佳阈值来检查电阻率。 这允许在每个处理步骤中适当地完成漂洗过程。

公开(公告)号：US20100301439A1

公开(公告)日：2010-12-02

申请号：US12805090

申请日：2010-07-12

申请人： Yuichi Yamamoto ,  Hayato Iwamoto

发明人： Yuichi Yamamoto ,  Hayato Iwamoto

IPC分类号： H01L31/0216 ,  H01L31/02 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L27/14627 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14601 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

摘要： A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup region, with the insulating layer being buried around a contact layer that connects an electrode layer of a pad portion and an interconnection layer of the surface side. A method of manufacturing such a solid-state imaging device is also provided.

公开(公告)号：US20100137527A1

公开(公告)日：2010-06-03

申请号：US12596160

申请日：2007-04-18

申请人： Hayato Iwamoto ,  Yoshitomo Hara ,  Hideo Ueda ,  Masaharu Saito

发明人： Hayato Iwamoto ,  Yoshitomo Hara ,  Hideo Ueda ,  Masaharu Saito

IPC分类号： C08L77/12

CPC分类号： D01F6/90 ,  C08L77/02 ,  C08L77/06 ,  C08L2205/02 ,  Y10T428/29 ,  Y10T428/2913 ,  Y10T428/2915 ,  Y10T428/2929 ,  Y10T428/2931 ,  C08L2666/20

摘要： A highly shrinkable fiber composed of nylon-MXD6 polymer and nylon-6 polymer, characterized in that a weight ratio therebetween is in the range of 35:65 to 70:30, and that each thereof exhibits a breaking strength of 4.00 cN/dtex or greater. Preferably, the weight ratio between nylon-MXD6 polymer and nylon-6 polymer of the highly shrinkable fiber is in the range of 45.55 to 55:45. The highly shrinkable fiber exhibits a high shrinkage ratio in boiling water, so that when the highly shrinkable fiber is used in a woven fabric, there can be realized a high density.

摘要翻译： 由尼龙-MDD6聚合物和尼龙-6聚合物组成的高收缩纤维，其特征在于它们之间的重量比在35:65至70:30的范围内，并且它们各自表现出4.00cN / dtex的断裂强度或 更大 优选地，高收缩纤维的尼龙-MDD6聚合物和尼龙-6聚合物之间的重量比在45.55至55:45的范围内。 高收缩性纤维在沸水中表现出高的收缩率，因此当将高收缩性纤维用于纺织物时，可以实现高密度。

公开(公告)号：US20060244078A1

公开(公告)日：2006-11-02

申请号：US11457289

申请日：2006-07-13

申请人： Hayato Iwamoto ,  Kei Kinoshita ,  Hajime Ugajin

发明人： Hayato Iwamoto ,  Kei Kinoshita ,  Hajime Ugajin

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/00

CPC分类号： H01L21/31111

摘要： An etching method and etching device are provided, enabling uniform rendering of the thickness of a film for processing on a wafer regardless of the film thickness profile thereof, and thereby enabling global planarizing of the wafer surface. In an etching method, the film thickness profile of the film for processing formed on the wafer is ascertained in advance, and wet etching is performed by discharging an etchant liquid L1 at a thick portion of the film for processing; simultaneously with the discharge of the etchant liquid L1, a diluting liquid L2 for the etchant liquid L1 is discharged at a thin portion of the film for processing.

摘要翻译： 提供了一种蚀刻方法和蚀刻装置，能够均匀地渲染用于在晶片上进行处理的膜的厚度，而与其膜厚轮廓无关，从而使得晶片表面能够全局平坦化。 在蚀刻方法中，预先确定在晶片上形成的用于加工的膜的膜厚分布，并且通过在用于处理的膜的厚部排出蚀刻剂液体L 1来进行湿蚀刻; 与蚀刻剂液体L 1的排出同时，用于蚀刻剂液体L 1的稀释液体L 2在薄膜的一部分被排出以进行处理。

公开(公告)号：US6158141A

公开(公告)日：2000-12-12

申请号：US304039

申请日：1999-05-04

申请人： Kazumi Asada ,  Hayato Iwamoto ,  Teruomi Minami

发明人： Kazumi Asada ,  Hayato Iwamoto ,  Teruomi Minami

IPC分类号： H01L21/00 ,  F26B21/00

CPC分类号： H01L21/67034 ,  Y10S134/902

摘要： An apparatus and method for drying semiconductor substrates to dry about 50 semiconductor wafers by evaporating an organic solvent and blowing the evaporated organic solvent onto these semiconductor wafers through a nozzle, comprises the evaporate organic solvent being blown onto the semiconductor wafers from a direction aslant by an angle from 20.degree. to 50.degree. from a vertical direction toward the semiconductor wafers. At this time, the initial spray amount of the evaporated organic solvent is not less than 0.8 cc/second and not more than 1.5 cc/second, additionally, the amount of the organic solvent used for drying is not less than 70 cc/batch and not more than 200 cc/batch.

摘要翻译： 一种干燥半导体衬底以通过蒸发有机溶剂并通过喷嘴将蒸发的有机溶剂吹送到这些半导体晶片上的半导体衬底来干燥半导体衬底的装置和方法，包括将蒸发的有机溶剂从倾斜的方向吹到半导体晶片上 从垂直方向向半导体晶片的角度为20°至50°。 此时，蒸发的有机溶剂的初始喷雾量不小于0.8cc /秒且不超过1.5cc /秒，另外用于干燥的有机溶剂的量不小于70cc /批， 不超过200cc /批。

公开(公告)号：US6156153A

公开(公告)日：2000-12-05

申请号：US158572

申请日：1998-09-22

申请人： Hayato Iwamoto ,  Kiyoshi Kurosawa

发明人： Hayato Iwamoto ,  Kiyoshi Kurosawa

IPC分类号： H01L21/306 ,  B08B3/10 ,  H01L21/00 ,  H01L21/304 ,  C23F1/02 ,  H01L21/302

CPC分类号： H01L21/67086 ,  B08B3/102 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708

摘要： A chemical treatment apparatus including a treatment tank filled with chemical with which wafers are treated, and a jet pipe having chemical jetting holes which is provided at the bottom portion of the treatment tank and jets the chemical from the jetting holes thereof, the jetting holes containing at least first jetting holes for jetting the chemical upwardly and second jetting holes for jetting the chemical in a direction different from that of the first holes. The second direction is set to a direction within the range from the horizontal direction of the jet pipe to the obliquely downward direction at 45 degrees with respect to the horizontal direction.

摘要翻译： 一种化学处理设备，其包括填充有待处理晶片的化学品的处理槽，以及设置在处理槽底部的化学喷射孔的喷射管，并且喷射来自其喷射孔的化学物质，喷射孔包含 至少第一喷射孔用于喷射化学物向上和第二喷射孔，用于沿与第一孔不同的方向喷射化学物质。 第二方向设定为相对于水平方向成45度的从喷射管的水平方向向斜下方的范围内的方向。

公开(公告)号：US08088693B2

公开(公告)日：2012-01-03

申请号：US11542138

申请日：2006-10-04

申请人： Yoshimichi Shiki ,  Seiji Oda ,  Hayato Iwamoto ,  Yoshiya Hagimoto

发明人： Yoshimichi Shiki ,  Seiji Oda ,  Hayato Iwamoto ,  Yoshiya Hagimoto

IPC分类号： H01L21/302

CPC分类号： H01L21/02052 ,  H01L21/31133

摘要： There is provided a substrate treatment method for performing treatment by feeding a chemical liquid to a surface of a substrate, in which, before feeding the chemical liquid to a predetermined area of the substrate, a liquid substance having a resistivity lower than that of the chemical liquid is fed to the surface of the substrate so that the liquid substance wets at least the predetermined area, and then, the chemical liquid is fed to the predetermined area so that the treatment is performed on the substrate with the chemical liquid fed to the surface of the substrate.

摘要翻译： 提供了一种基板处理方法，用于通过将药液供给到基板的表面进行处理，其中在将化学液体供给到基板的预定区域之前，具有低于化学品的电阻率的液体物质 将液体供给到基板的表面，使得液体物质至少润湿预定面积，然后将化学液体供给到预定区域，使得在基板上进行处理，并将化学液体供给到表面 的基底。