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    SEMICONDUCTOR DEVICE AND IMAGING APPARATUS
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND IMAGING APPARATUS 有权
    半导体器件和成像装置

    公开(公告)号：US20130234277A1

    公开(公告)日：2013-09-12

    申请号：US13793445

    申请日：2013-03-11

    Applicant: Takaaki Negoro ,  Hirofumi Watanabe ,  Yutaka Hayashi ,  Toshitaka Ota ,  Yasushi Nagamune

    Inventor： Takaaki Negoro ,  Hirofumi Watanabe ,  Yutaka Hayashi ,  Toshitaka Ota ,  Yasushi Nagamune

    IPC: H01L27/146 ,  H01L29/73

    CPC classification number: H01L27/14681 ,  H01L27/14683 ,  H01L29/73 ,  H01L29/739 ,  H01L31/1105

    Abstract: The invention relates to a semiconductor device having a vertical transistor bipolar structure of emitter, base, and collector formed in this order from a semiconductor substrate surface in a depth direction. The semiconductor device includes an electrode embedded from the semiconductor substrate surface into the inside and insulated by an oxide film. In the surface of the substrate, a first-conductivity-type first semiconductor region, a second-conductivity-type second semiconductor region, and a first-conductivity-type third semiconductor region are arranged, from the surface side, inside a semiconductor device region surrounded by the electrode and along the electrode with the oxide film interposed therebetween, the second semiconductor region located below the first semiconductor region, the third semiconductor region located below the second semiconductor region. The electrode is insulated from the first to third semiconductor regions, and current gain is variable through application of voltage to the electrode.

    Abstract translation: 本发明涉及一种半导体器件，其具有从半导体衬底表面沿深度方向依次形成的发射极，基极和集电极的垂直晶体管双极结构。 半导体器件包括从半导体衬底表面嵌入内部并由氧化物膜绝缘的电极。 在基板的表面中，从第一导电型第一半导体区域，第二导电型第二半导体区域和第一导电型第三半导体区域的表面侧配置在半导体器件区域 被电极围绕并且沿着电极，氧化膜插入其间，位于第一半导体区域下方的第二半导体区域，位于第二半导体区域下方的第三半导体区域。 电极与第一至第三半导体区域绝缘​​，电流增益可通过向电极施加电压而变化。

    Photoelectric converter, photoelectric converter array and imaging device
    2.
    发明授权
    Photoelectric converter, photoelectric converter array and imaging device 有权
    光电转换器，光电转换器阵列和成像装置

    公开(公告)号：US09337234B2

    公开(公告)日：2016-05-10

    申请号：US14349414

    申请日：2012-10-05

    Applicant: Yutaka Hayashi ,  Toshitaka Ota ,  Yasushi Nagamune ,  Hirofumi Watanabe ,  Takaaki Negoro ,  Kazunari Kimino

    Inventor： Yutaka Hayashi ,  Toshitaka Ota ,  Yasushi Nagamune ,  Hirofumi Watanabe ,  Takaaki Negoro ,  Kazunari Kimino

    IPC: H01L27/146 ,  H04N5/3745 ,  H04N5/378 ,  H01L27/144

    CPC classification number: H01L27/14681 ,  H01L27/1443 ,  H01L27/14609 ,  H01L27/14656 ,  H04N5/3745 ,  H04N5/378

    Abstract: A photoelectric converter includes a first pn junction comprised of at least two semiconductor regions of different conductivity types, and a first field-effect transistor including a first source connected with one of the semiconductor regions, a first drain, a first insulated gate and a same conductivity type channel as that of the one of the semiconductor regions. The first drain is supplied with a second potential at which the first pn junction becomes zero-biased or reverse-biased relative to a potential of the other of the semiconductor regions. When the first source turns to a first potential and the one of the semiconductor regions becomes zero-biased or reverse-biased relative to the other semiconductor regions, the first pn junction is controlled not to be biased by a deep forward voltage by supplying a first gate potential to the first insulated gate, even when either of the semiconductor regions is exposed to light.

    Abstract translation: 光电转换器包括由至少两个不同导电类型的半导体区组成的第一pn结，以及包括与半导体区之一连接的第一源的第一场效应晶体管，第一漏极，第一绝缘栅极和 导电型沟道，与半导体区域中的一个相同。 第一漏极被提供有第二电位，在该第二电位处，第一pn结相对于另一个半导体区域的电位变为零偏置或反向偏置。 当第一源极变为第一电位并且半导体区域中的一个相对于其它半导体区域变为零偏置或反向偏置时，通过提供第一源极的第一电位，第一pn结被控制为不被深的正向电压偏置， 即使当半导体区域中的任一个暴露于光时，第一绝缘栅极的栅极电位。

    Photoelectric conversion cell and array, reset circuit and electrical signal sense control circuit therefor
    3.
    发明授权
    Photoelectric conversion cell and array, reset circuit and electrical signal sense control circuit therefor 有权
    光电转换单元和阵列，复位电路和电信号检测控制电路

    公开(公告)号：US09142579B2

    公开(公告)日：2015-09-22

    申请号：US13811623

    申请日：2011-07-22

    Applicant: Yutaka Hayashi ,  Yasushi Nagamune ,  Toshitaka Ota

    Inventor： Yutaka Hayashi ,  Yasushi Nagamune ,  Toshitaka Ota

    IPC: H01J40/14 ,  H01L27/146 ,  H01L27/144 ,  H01L31/103 ,  H04N5/361 ,  H01L31/101

    CPC classification number: H01L27/14609 ,  H01L27/1446 ,  H01L31/101 ,  H01L31/103 ,  H04N5/361

    Abstract: In order to achieve a photoelectric conversion cell and an array of high sensitivity and high dynamic range, there is a need for a photoelectric conversion cell and an array in which combination of an amplified photoelectric conversion element and a selection element are resistant to external noise, and the combination is resistant to effects from address selection pulse noise at array readout time. In the present invention, in order to solve the problem, a photoelectric conversion cell has been configured with a combination of an amplified photoelectric conversion element (100) and a selection element (10 and the like) which are resistant to external noise, and various means of solution of the combination are provided which are resistant to the effects of address selection pulse noise at array readout time. As a result, a dynamic range of 6 to 7 orders of magnitude for light detection has become possible.

    Abstract translation: 为了实现光电转换单元和高灵敏度和高动态范围的阵列，需要一种光电转换单元和阵列，其中放大的光电转换元件和选择元件的组合抵抗外部噪声， 并且该组合抵抗阵列读出时的地址选择脉冲噪声的影响。 在本发明中，为了解决上述问题，光电转换单元已经被配置成具有耐外部噪声的放大光电转换元件（100）和选择元件（10等）的组合，并且各种 提供了组合的解决方案，其抵抗阵列读出时间的地址选择脉冲噪声的影响。 结果，光检测的动态范围为6〜7个数量级成为可能。

    Semiconductor device and imaging apparatus
    6.
    发明授权
    Semiconductor device and imaging apparatus 有权
    半导体装置及成像装置

    公开(公告)号：US09362328B2

    公开(公告)日：2016-06-07

    申请号：US13793445

    申请日：2013-03-11

    Applicant: Takaaki Negoro ,  Hirofumi Watanabe ,  Yutaka Hayashi ,  Toshitaka Ota ,  Yasushi Nagamune

    Inventor： Takaaki Negoro ,  Hirofumi Watanabe ,  Yutaka Hayashi ,  Toshitaka Ota ,  Yasushi Nagamune

    IPC: H01L27/146 ,  H01L29/73 ,  H01L31/11 ,  H01L29/739

    CPC classification number: H01L27/14681 ,  H01L27/14683 ,  H01L29/73 ,  H01L29/739 ,  H01L31/1105

    Abstract: The invention relates to a semiconductor device having a vertical transistor bipolar structure of emitter, base, and collector formed in this order from a semiconductor substrate surface in a depth direction. The semiconductor device includes an electrode embedded from the semiconductor substrate surface into the inside and insulated by an oxide film. In the surface of the substrate, a first-conductivity-type first semiconductor region, a second-conductivity-type second semiconductor region, and a first-conductivity-type third semiconductor region are arranged, from the surface side, inside a semiconductor device region surrounded by the electrode and along the electrode with the oxide film interposed therebetween, the second semiconductor region located below the first semiconductor region, the third semiconductor region located below the second semiconductor region. The electrode is insulated from the first to third semiconductor regions, and current gain is variable through application of voltage to the electrode.

    Abstract translation: 本发明涉及一种半导体器件，其具有从半导体衬底表面沿深度方向依次形成的发射极，基极和集电极的垂直晶体管双极结构。 半导体器件包括从半导体衬底表面嵌入内部并由氧化物膜绝缘的电极。 在基板的表面中，从第一导电型第一半导体区域，第二导电型第二半导体区域和第一导电型第三半导体区域的表面侧配置在半导体器件区域 被电极围绕并且沿着电极，氧化膜插入其间，位于第一半导体区域下方的第二半导体区域，位于第二半导体区域下方的第三半导体区域。 电极与第一至第三半导体区域绝缘​​，电流增益可通过向电极施加电压而变化。

    SENSE CIRCUIT AND METHOD OF OPERATION THEREOF AND PHOTOELECTRIC CONVERSION ARRAY
    8.
    发明申请
    SENSE CIRCUIT AND METHOD OF OPERATION THEREOF AND PHOTOELECTRIC CONVERSION ARRAY 有权
    感应电路及其操作方法和光电转换阵列

    公开(公告)号：US20130187030A1

    公开(公告)日：2013-07-25

    申请号：US13745197

    申请日：2013-01-18

    Applicant: Yutaka Hayashi ,  Toshitaka Ota ,  Yasushi Nagamune ,  Hirofumi Watanabe ,  Kazuhiro Yoneda ,  Katsuhiko Aisu ,  Takaaki Negoro

    Inventor： Yutaka Hayashi ,  Toshitaka Ota ,  Yasushi Nagamune ,  Hirofumi Watanabe ,  Kazuhiro Yoneda ,  Katsuhiko Aisu ,  Takaaki Negoro

    IPC: H01L27/144

    CPC classification number: H04N5/378 ,  H01L27/144

    Abstract: A sense circuit includes a differential amplifier circuit including an inverting input section, a non-inverting input section and an output section, an electrical capacitor connected between the inverting input section and the output section, and a field effect transistor including a source, a drain, and a gate. One of the source and the drain is connected to the inverting input section, and the other of the source and the drain is connected to the output section. A reference potential is supplied to the non-inverting input section, and an output section of a photoelectric conversion cell having an added switching function is connected to the inverting input section.

    Abstract translation: 感测电路包括差分放大器电路，其包括反相输入部分，非反相输入部分和输出部分，连接在反相输入部分和输出部分之间的电容器，以及场效应晶体管，其包括源极，漏极 ，和一个门。 源极和漏极之一连接到反相输入部分，源极和漏极中的另一个连接到输出部分。 参考电位被提供给非反相输入部分，并且具有增加的开关功能的光电转换单元的输出部分连接到反相输入部分。

    PHOTOELECTRIC CONVERSION CELL AND ARRAY, READING METHOD THEREFOR, AND CIRCUIT THEREOF
    9.
    发明申请
    PHOTOELECTRIC CONVERSION CELL AND ARRAY, READING METHOD THEREFOR, AND CIRCUIT THEREOF 有权
    光电转换单元和阵列，其读取方法及其电路

    公开(公告)号：US20130119240A1

    公开(公告)日：2013-05-16

    申请号：US13811623

    申请日：2011-07-22

    Applicant: Yutaka Hayashi ,  Yasushi Nagamune ,  Toshitaka Ota

    Inventor： Yutaka Hayashi ,  Yasushi Nagamune ,  Toshitaka Ota

    IPC: H01L27/146 ,  H01L31/101

    CPC classification number: H01L27/14609 ,  H01L27/1446 ,  H01L31/101 ,  H01L31/103 ,  H04N5/361

    Abstract: In order to achieve a photovoltaic cell and an array of high sensitivity and high dynamic range, there is a need for a photovoltaic cell and an array which are combined so that an amplified photovoltaic element and a selection element are resistant to external noise, and so that the combination is resistant to effects from address selection pulse noise at array readout time. In the present invention, in order to solve the problem, a photovoltaic cell has been configured with a combination of an amplified photovoltaic element (100) and a selection element (10 and the like) which are resistant to external noise, and various means of solution of the combination are provided which are resistant to the effects of address selection pulse noise at array readout time. As a result, a dynamic range of 6 to 7 orders of magnitude for light detection has become possible.

    Abstract translation: 为了实现光电池和高灵敏度和高动态范围的阵列，需要组合光伏电池和阵列，使得放大的光电元件和选择元件抵抗外部噪声，因此 该组合在阵列读出时间内抵抗来自地址选择脉冲噪声的影响。 在本发明中，为了解决这个问题，光电池已经被配置为具有抵抗外部噪声的放大光电元件（100）和选择元件（10等）的组合， 提供了组合的解决方案，其在阵列读出时间内抵抗地址选择脉冲噪声的影响。 结果，光检测的动态范围为6〜7个数量级成为可能。

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