公开(公告)号：US20080124827A1

公开(公告)日：2008-05-29

申请号：US11819520

申请日：2007-06-28

申请人： Chi-Feng Huang ,  Tsung-Yi Tang ,  Jeng-Jie Huang ,  Wen-Yu Shiao ,  Horng-Shyang Chen ,  Chih-Feng Lu ,  Jian-Jang Huang ,  Chih-Chung Yang

发明人： Chi-Feng Huang ,  Tsung-Yi Tang ,  Jeng-Jie Huang ,  Wen-Yu Shiao ,  Horng-Shyang Chen ,  Chih-Feng Lu ,  Jian-Jang Huang ,  Chih-Chung Yang

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/32

摘要： A method and structure for manufacturing long-wavelength visible light-emitting diode (LED) using the prestrained growth effect comprises the following steps: Growing a strained low-indium-content InGaN layer on the N-type GaN layer, and then growing a high-indium-content InGaN/GaN single- or multiple-quantum-well light-emitting structure on the low-indium-content InGaN layer to enhance the indium content of the high-indium quantum wells and hence to elongate the emission wavelength of the LED. The method of the invention can elongate emission wavelength of the LED by more than 50 nm (nanometer) such that an originally designated green LED can emit red light or orange light without influencing other electrical properties.

摘要翻译： 使用预制生长效应制造长波长可见发光二极管（LED）的方法和结构包括以下步骤：在N型GaN层上生长应变低铟含量InGaN层，然后生长高 在铟含量低的InGaN层上的InGaN / GaN单或多量子阱发光结构，以增强高铟量子阱的铟含量，从而延长LED的发射波长 。 本发明的方法可以使LED的发射波长可以超过50nm（纳米），使得原始指定的绿色LED可以发射红光或橙光而不影响其他电性能。

公开(公告)号：US20080035909A1

公开(公告)日：2008-02-14

申请号：US11819175

申请日：2007-06-26

申请人： Chih-Feng Lu ,  Horng-Shyang Chen ,  Dong-Ming Yeh ,  Chi-Feng Huang ,  Tsung-Yi Tang ,  Jian-Jang Huang ,  Yen-Cheng Lu ,  Chih-Chung Yang ,  Jeng-Jie Huang ,  Yung-Sheng Chen

发明人： Chih-Feng Lu ,  Horng-Shyang Chen ,  Dong-Ming Yeh ,  Chi-Feng Huang ,  Tsung-Yi Tang ,  Jian-Jang Huang ,  Yen-Cheng Lu ,  Chih-Chung Yang ,  Jeng-Jie Huang ,  Yung-Sheng Chen

IPC分类号： H01L31/024 ,  H01L21/22 ,  H01L21/302

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/32

摘要： A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.

摘要翻译： 公开了一种用于控制根据本发明制造的多波长发光二极管（LED）的颜色对比度的方法。 本发明至少包括提高多量子阱LED的结温的步骤，使得空穴分布在LED的较深量子阱层中以增加较深量子阱层的发光强度，由此 控制由LED发射的多个波长的相对强度比。 通过调节LED的p型电极层的厚度或通过改变台面面积尺寸来控制其相对的热辐射表面积来实现增加多量子阱LED的结温的步骤。

公开(公告)号：US07875478B2

公开(公告)日：2011-01-25

申请号：US11819175

申请日：2007-06-26

申请人： Dong-Ming Yeh ,  Horng-Shyang Chen ,  Chih-Feng Lu ,  Chi-Feng Huang ,  Tsung-Yi Tang ,  Jian-Jang Huang ,  Yen-Cheng Lu ,  Chih-Chung Yang ,  Jeng-Jie Huang ,  Yung-Sheng Chen

发明人： Dong-Ming Yeh ,  Horng-Shyang Chen ,  Chih-Feng Lu ,  Chi-Feng Huang ,  Tsung-Yi Tang ,  Jian-Jang Huang ,  Yen-Cheng Lu ,  Chih-Chung Yang ,  Jeng-Jie Huang ,  Yung-Sheng Chen

IPC分类号： H01L21/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/32

摘要： A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.

摘要翻译： 公开了一种用于控制根据本发明制造的多波长发光二极管（LED）的颜色对比度的方法。 本发明至少包括提高多量子阱LED的结温的步骤，使得空穴分布在LED的较深量子阱层中以增加较深量子阱层的发光强度，由此 控制由LED发射的多个波长的相对强度比。 通过调节LED的p型电极层的厚度或通过改变台面面积尺寸来控制其相对的热辐射表面积来实现增加多量子阱LED的结温的步骤。

公开(公告)号：US20080157056A1

公开(公告)日：2008-07-03

申请号：US11819169

申请日：2007-06-26

申请人： Dong-Ming Yeh ,  Horng-Shyang Chen ,  Chih-Feng Lu ,  Chi-Feng Huang ,  Wen-Yu Shiao ,  Jian-Jang Huang ,  Yen-Cheng Lu ,  Chih-Chung Yang

发明人： Dong-Ming Yeh ,  Horng-Shyang Chen ,  Chih-Feng Lu ,  Chi-Feng Huang ,  Wen-Yu Shiao ,  Jian-Jang Huang ,  Yen-Cheng Lu ,  Chih-Chung Yang

IPC分类号： H01L33/00

CPC分类号： H01L33/26 ,  H01L33/08 ,  H01L33/16

摘要： A producing method of poly-wavelength light-emitting diode of utilizing nano-crystals and the light-emitting device thereof includes growing and processing a multiple-quantum-well layer based on stacking the mixture of at least two kinds of quantum wells to produce a two-wavelength light-emitting diode. Then, attaching nano-crystals on the two-wavelength light-emitting diode to transfer one of the wavelengths of the two-wavelength light-emitting diode to produce a poly-wavelength light-emitting diode. The device of the present invention can emit blue, green and red lights to produce white light.

摘要翻译： 利用纳米晶体的多波长发光二极管的制造方法及其发光装置包括：通过堆叠至少两种量子阱的混合物来生长和处理多量子阱层，以产生 双波长发光二极管。 然后，将纳米晶体附着在双波长发光二极管上，以传输双波长发光二极管的波长之一，以产生多波长发光二极管。 本发明的装置可以发出蓝色，绿色和红色的光以产生白光。

公开(公告)号：US20060215063A1

公开(公告)日：2006-09-28

申请号：US11087497

申请日：2005-03-24

申请人： Jian-Jang Huang ,  Yuan-Kai Chu

发明人： Jian-Jang Huang ,  Yuan-Kai Chu

IPC分类号： H04N5/00

CPC分类号： H04B1/28 ,  H03D7/18 ,  H04N5/211 ,  H04N5/50

摘要： A circuit and a method for eliminating interference introduced from an image channel into a desired channel is described. The circuit includes a splitter and an adder. The splitter generates signals split from a received signal having frequency components within the desired and image channel. The adder adds together the signals output from the splitter. The circuit can be used in an TV tuner.

摘要翻译： 描述用于消除从图像信道引入到期望信道中的干扰的电路和方法。 该电路包括分路器和加法器。 分离器产生从具有期望和图像通道内的频率分量的接收信号分离的信号。 加法器将分离器输出的信号相加。 该电路可用于电视调谐器。

公开(公告)号：US08053836B2

公开(公告)日：2011-11-08

申请号：US12475711

申请日：2009-06-01

申请人： Yung-Hui Yeh ,  Chun-Cheng Cheng ,  Jian-Jang Huang ,  Shih-Hua Hsiao ,  Kuang-Chung Liu

发明人： Yung-Hui Yeh ,  Chun-Cheng Cheng ,  Jian-Jang Huang ,  Shih-Hua Hsiao ,  Kuang-Chung Liu

IPC分类号： H04L29/02

CPC分类号： H01L29/7869 ,  H01L29/78609 ,  H01L29/78696

摘要： An oxide semiconductor thin-film transistor, comprising: a source electrode and a drain electrode formed on a substrate; a composite semiconductor active layer formed between the source electrode and the drain electrode; a gate dielectric layer formed on the source electrode, the composite semiconductor active layer and the drain electrode; and a gate electrode formed on the gate dielectric layer and corresponding to the composite semiconductor active layer; wherein the composite semiconductor active layer comprises a low carrier-concentration first oxide semiconductor layer and a high carrier-concentration second oxide semiconductor layer.

摘要翻译： 一种氧化物半导体薄膜晶体管，包括：在基板上形成的源电极和漏电极; 形成在所述源电极和所述漏电极之间的复合半导体有源层; 形成在源电极上的栅介电层，复合半导体有源层和漏电极; 以及形成在所述栅极电介质层上并对应于所述复合半导体有源层的栅电极; 其中所述复合半导体有源层包括低载流子浓度第一氧化物半导体层和高载流子浓度第二氧化物半导体层。

公开(公告)号：US20110100442A1

公开(公告)日：2011-05-05

申请号：US12870248

申请日：2010-08-27

申请人： Jian-Jang Huang ,  Cheng-Pin Chen ,  Pei-Hsuan Lin

发明人： Jian-Jang Huang ,  Cheng-Pin Chen ,  Pei-Hsuan Lin

IPC分类号： H01L31/04

CPC分类号： H01L31/065 ,  B82Y20/00 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/0324 ,  H01L31/035236 ,  Y02E10/50

摘要： A structure of a solar cell. The structure of the solar cell includes a substrate, a graded layer and a semiconductor layer. The graded layer is disposed on the substrate. The graded layer is made from materials including the first material and the second material, and includes at least one thin film. One of the at least one thin film includes a mixture of at least the first material and the second material at a mixture ratio. The mixture forms a bandgap of the at least one thin film. The semiconductor layer is disposed on the graded layer.

摘要翻译： 太阳能电池的结构。 太阳能电池的结构包括基板，梯度层和半导体层。 分级层设置在基板上。 分级层由包括第一材料和第二材料的材料制成，并且包括至少一个薄膜。 所述至少一个薄膜中的一个以混合比包括至少第一材料和第二材料的混合物。 混合物形成至少一个薄膜的带隙。 半导体层设置在分级层上。