公开(公告)号：US09076738B2

公开(公告)日：2015-07-07

申请号：US13183175

申请日：2011-07-14

Applicant: Takeru Watanabe ,  Toshihiko Fujii ,  Takeshi Kinsho ,  Tsutomu Ogihara

Inventor： Takeru Watanabe ,  Toshihiko Fujii ,  Takeshi Kinsho ,  Tsutomu Ogihara

IPC: H01L21/311 ,  C07C69/753 ,  G03F7/11 ,  H01L21/027

CPC classification number: H01L21/31144 ,  C07C69/753 ,  C07C2604/00 ,  G03F7/11 ,  H01L21/0271 ,  H01L21/31116

Abstract: The invention provides a composition for a resist underlayer film, the composition for a resist underlayer film to form a resist underlayer film of a multilayer resist film used in lithography, wherein the composition comprises at least (A) a fullerene derivative that is a reaction product of a substance having a fullerene skeleton with a 1,3-diene compound derivative having an electron-withdrawing group and (B) an organic solvent. There can be a composition for a resist underlayer film for a multilayer resist film used in lithography, the composition giving a resist underlayer film having excellent high dry etching resistance, capable of suppressing wiggling during substrate etching with high effectiveness, and capable of avoiding a poisoning problem in upperlayer patterning that uses a chemical amplification resist; a process for forming a resist underlayer film; a patterning process; and a fullerene derivative.

Abstract translation: 本发明提供了一种用于抗蚀剂下层膜的组合物，用于形成抗蚀剂下层膜的组合物，用于形成用于光刻的多层抗蚀剂膜的抗蚀剂下层膜，其中所述组合物至少包含（A）富勒烯衍生物，其为反应产物 具有富勒烯骨架的物质与具有吸电子基团的1,3-二烯化合物衍生物和（B）有机溶剂。 可以使用用于光刻中的多层抗蚀剂膜的抗蚀剂下层膜的组合物，该组合物赋予抗蚀剂下层膜，其具有优异的耐干蚀刻性，能够高效地抑制基板蚀刻期间的扭曲，并且能够避免中毒 使用化学增幅抗蚀剂的上层图案化问题; 形成抗蚀剂下层膜的工序; 图案化过程; 和富勒烯衍生物。

公开(公告)号：US08932953B2

公开(公告)日：2015-01-13

申请号：US13570403

申请日：2012-08-09

Applicant: Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano ,  Yoshinori Taneda

Inventor： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano ,  Yoshinori Taneda

IPC: C08K5/5419 ,  C08L43/04

CPC classification number: G03F7/091 ,  G03F7/0751 ,  G03F7/094 ,  G03F7/11 ,  G03F7/322 ,  G03F7/325 ,  G03F7/40

Abstract: A composition for forming a silicon-containing resist underlayer film that contains: a component (A) including at least one or more compounds selected from the group consisting of a polymer having repeating units shown by the following general formulae (1-1a) and (1-1b) and being capable of generating a phenolic hydroxyl group, a hydrolysate of the polymer, and a hydrolysis-condensate of the polymer, and a component (B) which is a silicon-containing compound obtained by hydrolysis-condensation of a mixture containing, at least, one or more hydrolysable silicon compounds represented by the following general formula (2) and one or more hydrolysable silicon compounds represented by the following general formula (3). R11m11R12m12R13m13Si(OR14)(4−m11−m12−m13)  (2) Si(OR15)4  (3)

Abstract translation: 一种用于形成含硅抗蚀剂下层膜的组合物，其含有：包含至少一种或多种选自下列通式（1-1a）和（ 1-1b），并且能够产生酚羟基，聚合物的水解产物和聚合物的水解 - 缩合物，以及通过混合物的水解缩合获得的作为含硅化合物的组分（B） 含有至少一种或多种由以下通式（2）表示的可水解硅化合物和由以下通式（3）表示的一种或多种可水解硅化合物。 R11m11R12m12R13m13Si（OR14）（4-m11-m12-m13）（2）Si（OR15）4（3）

公开(公告)号：US08835697B2

公开(公告)日：2014-09-16

申请号：US13424455

申请日：2012-03-20

Applicant: Daisuke Kori ,  Takeshi Kinsho ,  Katsuya Takemura ,  Tsutomu Ogihara ,  Takeru Watanabe ,  Hiroyuki Urano

Inventor： Daisuke Kori ,  Takeshi Kinsho ,  Katsuya Takemura ,  Tsutomu Ogihara ,  Takeru Watanabe ,  Hiroyuki Urano

IPC: C07C39/17 ,  G03F7/09 ,  C09D161/12

CPC classification number: C07C39/17 ,  C09D161/12 ,  G03F7/091 ,  G03F7/094

Abstract: A biphenyl derivative having formula (1) is provided wherein Ar1 and Ar2 denote a benzene or naphthalene ring, and x and z each are 0 or 1. A material comprising the biphenyl derivative or a polymer comprising recurring units of the biphenyl derivative is spin coated and heat treated to form a resist bottom layer having improved properties, optimum values of n and k, step coverage, etch resistance, heat resistance, solvent resistance, and minimized outgassing.

Abstract translation: 提供具有式（1）的联苯衍生物，其中Ar1和Ar2表示苯或萘环，x和z各自为0或1.包含联苯衍生物或包含联苯衍生物的重复单元的聚合物的材料是旋涂 并进行热处理以形成具有改进性能，n和k的最佳值，台阶覆盖率，耐蚀刻性，耐热性，耐溶剂性和最小化除气的抗蚀剂底层。

公开(公告)号：US08835102B2

公开(公告)日：2014-09-16

申请号：US13416842

申请日：2012-03-09

Applicant: Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano

Inventor： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano

IPC: G03F7/26 ,  G03F7/075 ,  C08L83/14 ,  C09D183/04 ,  C08L83/04 ,  G03F7/09 ,  G03F7/11 ,  G03F7/32

CPC classification number: G03F7/0757 ,  C08L83/04 ,  C08L83/14 ,  C09D183/04 ,  G03F7/0397 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  G03F7/325 ,  C08G77/04

Abstract: The invention provides a patterning process for forming a negative pattern by lithography, comprising at least the steps of: using a composition for forming silicon-containing film, containing specific silicon-containing compound (A) and an organic solvent (B), to form a silicon-containing film; using a silicon-free resist composition to form a photoresist film on the silicon-containing film; heat-treating the photoresist film, and subsequently exposing the photoresist film to a high energy beam; and using a developer comprising an organic solvent to dissolve an unexposed area of the photoresist film, thereby obtaining a negative pattern. There can be a patterning process, which is optimum as a patterning process of a negative resist to be formed by adopting organic solvent-based development, and a composition for forming silicon-containing film to be used in the process.

Abstract translation: 本发明提供一种用于通过光刻形成负型图案的图案化工艺，其至少包括以下步骤：使用含有特定含硅化合物（A）和有机溶剂（B）的含硅膜形成用组合物以形成 含硅膜; 使用无硅抗蚀剂组合物在含硅膜上形成光致抗蚀剂膜; 热处理光致抗蚀剂膜，然后将光致抗蚀剂膜暴露于高能量束; 并使用包含有机溶剂的显影剂来溶解光致抗蚀剂膜的未曝光区域，由此获得负图案。 可以存在作为通过采用有机溶剂型显影形成的负型抗蚀剂的图案化工艺的最佳方案，以及用于形成所述工艺中使用的含硅膜的组合物。

公开(公告)号：US08663898B2

公开(公告)日：2014-03-04

申请号：US13311137

申请日：2011-12-05

Applicant: Tsutomu Ogihara ,  Takeru Watanabe ,  Yusuke Biyajima ,  Daisuke Kori ,  Takeshi Kinsho ,  Toshihiko Fujii

Inventor： Tsutomu Ogihara ,  Takeru Watanabe ,  Yusuke Biyajima ,  Daisuke Kori ,  Takeshi Kinsho ,  Toshihiko Fujii

IPC: G03F7/00 ,  G03F7/11 ,  G03F7/26 ,  G03F7/40

CPC classification number: G03F7/091 ,  G03F7/094

Abstract: There is disclosed A resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), one or more kinds of a compound represented by the following general formula (2), and one or more kinds of a compound, represented by the following general formula (3), and/or an equivalent body thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.

Abstract translation: 公开了抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种下列通式（1-1）和/或（1-2）表示的化合物的缩合得到的聚合物：一种或多种 由以下通式（2）表示的化合物的种类以及由以下通式（3）表示的化合物和/或其等同体的一种或多种。 可以提供能够形成具有降低的反射率的下层膜（即，具有最佳n值和k值作为抗反射膜的下层膜）的三层抗蚀剂工艺的下层膜组合物， 特别是在60nm以上的高方位线上，特别是在蚀刻后，不会引起线下落或翘曲，以及使用其的图案化处理。

公开(公告)号：US08652750B2

公开(公告)日：2014-02-18

申请号：US12163795

申请日：2008-06-27

Applicant: Tsutomu Ogihara ,  Toshiharu Yano ,  Koji Hasegawa

Inventor： Tsutomu Ogihara ,  Toshiharu Yano ,  Koji Hasegawa

IPC: G03F7/09 ,  G03F7/20 ,  G03F7/30 ,  G03F7/36 ,  G03F7/039

CPC classification number: C08L83/04 ,  C09D183/04 ,  G03F7/091

Abstract: A silicon-containing film is formed from a heat curable composition comprising (A) a silicon-containing compound obtained through hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Ce, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, (D) a cyclic ether-substituted alcohol, and (E) an organic solvent. The silicon-containing film ensures effective pattern formation, effective transfer of a photoresist pattern, and accurate processing of a substrate.

Abstract translation: 由含有（A）通过水解性硅化合物在酸性催化剂的存在下水解缩合得到的含硅化合物，（B）Li的氢氧化物或有机酸盐的热固性组合物形成含硅膜， Na，K，Rb或Ce，或锍，碘鎓或铵化合物，（C）有机酸，（D）环醚取代醇和（E）有机溶剂。 含硅膜确保有效的图案形成，光致抗蚀剂图案的有效转印以及基板的精确加工。

公开(公告)号：US08592956B2

公开(公告)日：2013-11-26

申请号：US13292696

申请日：2011-11-09

Applicant: Tsutomu Ogihara ,  Daisuke Kori ,  Yusuke Biyajima ,  Takeru Watanabe ,  Toshihiko Fujii ,  Takeshi Kinsho

Inventor： Tsutomu Ogihara ,  Daisuke Kori ,  Yusuke Biyajima ,  Takeru Watanabe ,  Toshihiko Fujii ,  Takeshi Kinsho

IPC: H01L23/58 ,  H01L21/469

CPC classification number: G03F7/11 ,  G03F7/091 ,  G03F7/095

Abstract: There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or general formula (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2). There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.

Abstract translation: 公开了一种抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种下列通式（1-1）和/或通式（1-2）表示的化合物的缩合得到的聚合物，和 一种或多种由以下通式（2）表示的化合物和/或其等同体。 可以提供能够形成具有降低的反射率的下层膜（即，具有最佳n值和k值的下层膜）的三层抗蚀剂工艺的下层膜组合物，优异的填充性，高 图案抗菌性，特别是在薄于60nm的高纵横线上，特别是在蚀刻后不会引起线下落或摆动，以及使用其的图案化处理。

公开(公告)号：US08450048B2

公开(公告)日：2013-05-28

申请号：US12585387

申请日：2009-09-14

Applicant: Jun Hatakeyama ,  Toshihiko Fujii ,  Tsutomu Ogihara

Inventor： Jun Hatakeyama ,  Toshihiko Fujii ,  Tsutomu Ogihara

IPC: G03F7/40 ,  G03F7/11

CPC classification number: G03F7/091 ,  G03F7/095

Abstract: There is disclosed a method for forming a resist underlayer film of a multilayer resist film having at least three layers used in a lithography, comprising at least; a step of coating a composition for resist underlayer film containing a novolak resin represented by the following general formula (1) obtained by treating a compound having a bisnaphthol group on a substrate; and a step of curing the coated composition for the resist underlayer film by a heat treatment at a temperature above 300° C. and 600° C. or lower for 10 to 600 seconds. There can be provided a method for forming a resist underlayer film, and a patterning process using the method to form a resist underlayer film in a multilayer resist film having at least three layers used in a lithography, gives a resist underlayer film having a lowered reflectance, a high etching resistance, and a high heat and solvent resistances, especially without wiggling during substrate etching.

Abstract translation: 公开了一种形成多层抗蚀剂膜的抗蚀剂下层膜的方法，所述多层抗蚀剂膜具有至少三层，其至​​少包括： 涂布含有下述通式（1）表示的酚醛清漆树脂的抗蚀剂下层膜用组合物的工序，所述酚醛清漆树脂通过在基材上处理具有双萘酚基的化合物而得到; 以及通过在高于300℃和600℃或更低的温度下热处理10至600秒来固化抗蚀剂下层膜的涂覆组合物的步骤。 可以提供一种形成抗蚀剂下层膜的方法，并且使用在具有至少三层的平版印刷用的多层抗蚀剂膜中形成抗蚀剂下层膜的方法的图案化工艺，得到具有降低的反射率的抗蚀剂下层膜 ，耐腐蚀性高，耐热和耐溶剂性高，特别是在基板蚀刻期间无晃动。

公开(公告)号：US20130108957A1

公开(公告)日：2013-05-02

申请号：US13604270

申请日：2012-09-05

Applicant: Motoaki Iwabuchi ,  Tsutomu Ogihara

Inventor： Motoaki Iwabuchi ,  Tsutomu Ogihara

IPC: G03F7/004 ,  G03F7/075

CPC classification number: G03F7/004 ,  B01D37/025 ,  G03F7/075 ,  G03F7/16

Abstract: The present invention provides a production method of a resist composition for lithography, comprising, at least: a filtering step for filtering a resist composition for lithography by a filter therethrough, wherein in the filtering step, a colloidal, sol is passed through the filter from upstream thereof to adsorb colloidal particles to the filter, and then the resist composition for lithography is passed through the filter, thereby removing fine particles in the resist composition for lithography therefrom. There can be provided a resist composition for lithography capable of decreasing occurrences of defects such as coating defects and pattern defects.

Abstract translation: 本发明提供了一种用于光刻的抗蚀剂组合物的制备方法，至少包括：通过过滤器过滤用于光刻的抗蚀剂组合物的过滤步骤，其中在过滤步骤中，将胶态溶胶从 上游，将胶体粒子吸附到过滤器上，然后将光刻用抗蚀剂组合物通过过滤器，从而除去抗蚀剂组合物中的微细颗粒，以进行光刻。 可以提供一种用于光刻的抗蚀剂组合物，其能够减少诸如涂层缺陷和图案缺陷等缺陷的发生。

公开(公告)号：US20130045601A1

公开(公告)日：2013-02-21

申请号：US13570403

申请日：2012-08-09

Applicant: Tsutomu OGIHARA ,  Takafumi UEDA ,  Toshiharu YANO ,  Yoshinori TANEDA

Inventor： Tsutomu OGIHARA ,  Takafumi UEDA ,  Toshiharu YANO ,  Yoshinori TANEDA

IPC: H01L21/308 ,  C08K5/5419 ,  C08L43/04

CPC classification number: G03F7/091 ,  G03F7/0751 ,  G03F7/094 ,  G03F7/11 ,  G03F7/322 ,  G03F7/325 ,  G03F7/40

Abstract: A composition for forming a silicon-containing resist underlayer film that contains: a component (A) including at least one or more compounds selected from the group consisting of a polymer having repeating units shown by the following general formulae (1-1a) and (1-1b) and being capable of generating a phenolic hydroxyl group, a hydrolysate of the polymer, and a hydrolysis-condensate of the polymer, and a component (B) which is a silicon-containing compound obtained by hydrolysis-condensation of a mixture containing, at least, one or more hydrolysable silicon compounds represented by the following general formula (2) and one or more hydrolysable silicon compounds represented by the following general formula (3). R11m11R12m12R13m13Si(OR14)(4-m11-m12-m13)  (2) Si(OR15)4  (3)

Abstract translation: 一种用于形成含硅抗蚀剂下层膜的组合物，其含有：包含至少一种或多种选自下列通式（1-1a）和（ 1-1b），并且能够产生酚羟基，聚合物的水解产物和聚合物的水解 - 缩合物，以及通过混合物的水解缩合获得的作为含硅化合物的组分（B） 含有至少一种或多种由以下通式（2）表示的可水解硅化合物和由以下通式（3）表示的一种或多种可水解硅化合物。 R11m11R12m12R13m13Si（OR14）（4-m11-m12-m13）（2）Si（OR15）4（3）