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公开(公告)号：US20150376776A1
公开(公告)日：2015-12-31
申请号：US14768027
申请日：2014-02-13
Applicant: Veeco Instruments, Inc.
Inventor： Arindom Datta , Frank M. Cerio , Sandeep Kohli , Boris L. Druz
IPC: C23C14/54
CPC classification number: C23C14/541 , C23C14/0617 , C23C14/34
Abstract: A thin film of material on a substrate is formed in a continuous process of a physical vapor deposition system, in which material is deposited during a variable temperature growth stage having a first phase conducted below a temperature of about 500° C., and material is continuously deposited as the temperature changes for the second phase to above about 800° C.
Abstract translation: 在物理气相沉积系统的连续过程中形成衬底上的材料薄膜，其中材料在具有在约500℃的温度以下进行的第一相的可变温度生长阶段期间沉积，并且材料是 随着第二相温度的变化，连续沉积到大约800℃以上
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Patent Agency Ranking
公开(公告)号：US11466360B2
公开(公告)日：2022-10-11
申请号：US16997782
申请日：2020-08-19
Applicant: Veeco Instruments Inc.
Inventor： Boris L. Druz , Viktor Kanarov , Yuriy N. Yevtukhov , Sandeep Kohli , Xingjie Fang
Abstract: An improved cathodic arc source and method of DLC film deposition with a carbon containing directional-jet plasma flow produced inside of cylindrical graphite cavity with depth of the cavity approximately equal to the cathode diameter. The generated carbon plasma expands through the orifice into ambient vacuum resulting in plasma flow strong self-constriction. The method represents a repetitive process that includes two steps: the described above plasma generation/deposition step that alternates with a recovery step. This step provides periodical removal of excessive amount of carbon accumulated on the cavity wall by motion of the cathode rod inside of the cavity in direction of the orifice. The cathode rod protrudes above the orifice, and moves back to the initial cathode tip position. The said steps periodically can be reproduced until the film with target thickness is deposited. Technical advantages include the film hardness, density, and transparency improvement, high reproducibility, long duration operation, and particulate reduction.
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公开(公告)号：US20210172053A1
公开(公告)日：2021-06-10
申请号：US16997782
申请日：2020-08-19
Applicant: Veeco Instruments Inc.
Inventor： Boris L. Druz , Viktor Kanarov , Yuriy N. Yevtukhov , Sandeep Kohli , Xingjie Fang
Abstract: An improved cathodic arc source and method of DLC film deposition with a carbon containing directional-jet plasma flow produced inside of cylindrical graphite cavity with depth s of the cavity approximately equal to the cathode diameter. The generated carbon plasma expands through the orifice into ambient vacuum resulting in plasma flow strong self-constriction. The method represents a repetitive process that includes two steps: the described above plasma generation/ deposition step that alternates with a recovery step. This step provides periodical removal of excessive amount of carbon accumulated on the cavity wall by motion of l o the cathode rod inside of the cavity in direction of the orifice. The cathode rod protrudes above the orifice, and moves back to the initial cathode tip position. The said steps periodically can be reproduced until the film with target thickness is deposited. Technical advantages include the film hardness, density, and transparency improvement, high reproducibility, long duration operation, and particulate reduction.
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公开(公告)号：US20170369984A1
公开(公告)日：2017-12-28
申请号：US15631627
申请日：2017-06-23
Applicant: Veeco Instruments Inc.
Inventor： Boris L. Druz , Viktor Kanarov , Yuriy N. Yevtukhov , Sandeep Kohli , Xingjie Fang
Abstract: An improved cathodic arc source and method of DLC film deposition with a carbon containing directional-jet plasma flow produced inside of cylindrical graphite cavity with depth of the cavity approximately equal to the cathode diameter. The generated carbon plasma expands through the orifice into ambient vacuum resulting in plasma flow strong self-constriction. The method represents a repetitive process that includes two steps: the described above plasma generation/deposition step that alternates with a recovery step. This step provides periodical removal of excessive amount of carbon accumulated on the cavity wall by motion of the cathode rod inside of the cavity in direction of the orifice. The cathode rod protrudes above the orifice, and moves back to the initial cathode tip position. The said steps periodically can be reproduced until the film with target thickness is deposited. Technical advantages include the film hardness, density, and transparency improvement, high reproducibility, long duration operation, and particulate reduction.
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公开(公告)号：US20160230268A1
公开(公告)日：2016-08-11
申请号：US15133961
申请日：2016-04-20
Applicant: Veeco Instruments, Inc.
Inventor： Boris L. Druz , Vincent Ip , Adrian Devasahayam
CPC classification number: C23C14/3442 , C23C14/081 , C23C14/083 , C23C14/10 , C23C14/14 , C23C14/16 , C23C14/225 , C23C14/35 , C23C14/354 , H01J37/3053
Abstract: An ion etch assisted deposition apparatus deposits a thin film upon a substrate having a three dimensional feature, using an ion etching source and deposition source arranged at similar angles relative to the substrate and at an angle α relative to each other. The angle α is selected to be substantially equal the supplement of the angle α′ formed between the three dimensional feature on the substrate and the substrate surface. In this configuration the relative flux of energetic etch ions and deposition atoms is adjusted to prevent the growth of poor quality deposited material.
Abstract translation: 离子蚀刻辅助沉积设备使用离子蚀刻源和沉积源以相对于衬底相似的角度相对于彼此成角度α将薄膜沉积在具有三维特征的衬底上。 角度α选择为基本上等于在基板上的三维特征与基板表面之间形成的角度α'的补充。 在该配置中，调节能量蚀刻离子和沉积原子的相对通量以防止劣质沉积材料的生长。
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6.发明申请公开(公告)号：US20130206583A1
公开(公告)日：2013-08-15
申请号：US13802828
申请日：2013-03-14
Applicant: Veeco Instruments, Inc.
Inventor： Boris L. Druz , Viktor Kanarov , Hariharakeshave S. Hegde , Alan V. Hayes , Emmanuel Lakios , Mario Roque
CPC classification number: C23C14/505 , C23C14/044 , C23C14/221 , C23C14/225 , C23C14/46 , C23C14/542 , H01J37/08 , H01J37/20 , H01J37/3053 , H01J37/3178 , H01J2237/20207 , H01J2237/20214 , H01J2237/20221
Abstract: Method and apparatus for processing a substrate with an energetic particle beam. Features on the substrate are oriented relative to the energetic particle beam and the substrate is scanned through the energetic particle beam. The substrate is periodically indexed about its azimuthal axis of symmetry, while shielded from exposure to the energetic particle beam, to reorient the features relative to the major dimension of the beam.
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