利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

25 条记录 (耗时 0.017 秒)

    PROCESS FOR PREPARING DIPHENYLMETHANEDIAMINE
    3.
    发明申请
    PROCESS FOR PREPARING DIPHENYLMETHANEDIAMINE 有权
    制备二苯基甲烷胺的方法

    公开(公告)号：US20100105951A1

    公开(公告)日：2010-04-29

    申请号：US12521873

    申请日：2008-01-02

    申请人： Veronika Wloka ,  Torsten Mattke ,  Daniel Breuninger

    发明人： Veronika Wloka ,  Torsten Mattke ,  Daniel Breuninger

    IPC分类号： C07C211/09

    CPC分类号： C07C209/78 ,  C07C209/84 ,  C07C211/50

    摘要： The invention provides a process for preparing diphenylmethanediamine, comprising the steps of a) reacting aniline with formaldehyde in the presence of an acid, b) neutralizing the acid with ammonia, c) separating the reaction mixture from step b) into an aqueous phase and an organic phase, d) treating the aqueous phase obtained in step c) with an oxide or hydroxide of an alkaline earth metal, e) separating off the ammonia obtained in step d).

    摘要翻译： 本发明提供一种制备二苯基甲烷二胺的方法，包括以下步骤：a）在酸存在下使苯胺与甲醛反应，b）用氨中和酸，c）将反应混合物从步骤b）分离成水相， 有机相，d）用碱土金属的氧化物或氢氧化物处理步骤c）中获得的水相，e）分离步骤d）中得到的氨。

    Process for producing semiconductive layers
    5.
    发明授权
    Process for producing semiconductive layers 有权
    生产半导体层的工艺

    公开(公告)号：US08877657B2

    公开(公告)日：2014-11-04

    申请号：US13266935

    申请日：2010-04-26

    申请人： Andrey Karpov ,  Friederike Fleischhaker ,  Imme Domke ,  Marcel Kastler ,  Veronika Wloka ,  Lothar Weber

    发明人： Andrey Karpov ,  Friederike Fleischhaker ,  Imme Domke ,  Marcel Kastler ,  Veronika Wloka ,  Lothar Weber

    IPC分类号： H01L21/31 ,  H01L29/786 ,  C23C18/12 ,  H01L21/02 ,  H01L29/66

    CPC分类号： C23C18/1216 ,  C23C18/1245 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02628 ,  H01L27/1292 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

    摘要： The present invention relates to a process for producing a layer comprising at least one semiconductive metal oxide on a substrate, comprising at least the steps of: (A) preparing a solution comprising at least one precursor compound of the at least one metal oxide selected from the group consisting of carboxylates of mono-, di- or polycarboxylic acids having at least three carbon atoms, or derivatives of mono-, di- or polycarboxylic acids, alkoxides, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidrazones, urea derivatives, hydroxylamines, oximes, urethanes, ammonia, amines, phosphines, ammonium compounds, azides of the corresponding metal and mixtures thereof, in at least one solvent, (B) applying the solution from step (A) to the substrate and (C) thermally treating the substrate from step (B) at a temperature of 20 to 200° C., in order to convert the at least one precursor compound to at least one semiconductive metal oxide, where, if electrically neutral [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10 is used as the precursor compound in step (A), it is obtained by reacting zinc oxide or zinc hydroxide with ammonia, to a substrate which has been coated with at least one semiconductive metal oxide and is obtainable by this process, to the use of this substrate in electronic components, and to a process for preparing electrically neutral [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10, by reacting zinc oxide and/or zinc hydroxide with ammonia.

    摘要翻译： 本发明涉及一种在基材上制备包含至少一种半导体金属氧化物的层的方法，至少包括以下步骤：（A）制备包含至少一种选自以下的金属氧化物的至少一种前体化合物的溶液： 由具有至少三个碳原子的单羧酸，二羧酸或多羧酸的羧酸盐组成的组，或单羧酸，二羧酸或多元羧酸，醇盐，氢氧化物，氨基脲，氨基甲酸酯，异羟肟酸酯，异氰酸酯，脒，氨基腙，脲 衍生物，羟胺，肟，氨基甲酸酯，氨，胺，膦，铵化合物，相应金属的叠氮化物及其混合物，在至少一种溶剂中，（B）将来自步骤（A）的溶液施加到基材上，（C） 在20至200℃的温度下对来自步骤（B）的基底进行热处理，以将至少一种前体化合物转化为至少一种半导体金属氧化物，其中如果电 中性[（OH）x（NH3）yZn] z其中x，y和z各自独立地为0.01〜10作为步骤（A）中的前体化合物，通过使氧化锌或氢氧化锌与氨反应得到 已经涂覆有至少一种半导体金属氧化物并且可以通过该方法获得的衬底，用于电子部件中的该衬底以及制备电中性[（OH）x（NH 3）y Zn] z的方法​​，其中 x，y和z各自独立地为0.01〜10，通过使氧化锌和/或氢氧化锌与氨反应。

    PROCESS FOR PRODUCING SEMICONDUCTIVE LAYERS
    7.
    发明申请
    PROCESS FOR PRODUCING SEMICONDUCTIVE LAYERS 有权
    生产半导体层的工艺

    公开(公告)号：US20120043537A1

    公开(公告)日：2012-02-23

    申请号：US13266935

    申请日：2010-04-26

    申请人： Andrey Karpov ,  Friederike Fleischhaker ,  Imme Domke ,  Marcel Kastler ,  Veronika Wloka ,  Lothar Weber

    发明人： Andrey Karpov ,  Friederike Fleischhaker ,  Imme Domke ,  Marcel Kastler ,  Veronika Wloka ,  Lothar Weber

    IPC分类号： H01L29/22 ,  H01L21/16 ,  C01B21/00

    CPC分类号： C23C18/1216 ,  C23C18/1245 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02628 ,  H01L27/1292 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

    摘要： The present invention relates to a process for producing a layer comprising at least one semiconductive metal oxide on a substrate, comprising at least the steps of: (A) preparing a solution comprising at least one precursor compound of the at least one metal oxide selected from the group consisting of carboxylates of mono-, di- or polycarboxylic acids having at least three carbon atoms, or derivatives of mono-, di- or polycarboxylic acids, alkoxides, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidrazones, urea derivatives, hydroxylamines, oximes, urethanes, ammonia, amines, phosphines, ammonium compounds, azides of the corresponding metal and mixtures thereof, in at least one solvent, (B) applying the solution from step (A) to the substrate and (C) thermally treating the substrate from step (B) at a temperature of 20 to 200° C., in order to convert the at least one precursor compound to at least one semiconductive metal oxide, where, if electrically neutral [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10 is used as the precursor compound in step (A), it is obtained by reacting zinc oxide or zinc hydroxide with ammonia, to a substrate which has been coated with at least one semiconductive metal oxide and is obtainable by this process, to the use of this substrate in electronic components, and to a process for preparing electrically neutral [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10, by reacting zinc oxide and/or zinc hydroxide with ammonia.

    摘要翻译： 本发明涉及一种在基材上制备包含至少一种半导体金属氧化物的层的方法，至少包括以下步骤：（A）制备包含至少一种选自以下的金属氧化物的至少一种前体化合物的溶液： 由具有至少三个碳原子的单羧酸，二羧酸或多羧酸的羧酸盐组成的组，或单羧酸，二羧酸或多元羧酸，醇盐，氢氧化物，氨基脲，氨基甲酸酯，异羟肟酸酯，异氰酸酯，脒，氨基腙，脲 衍生物，羟胺，肟，氨基甲酸酯，氨，胺，膦，铵化合物，相应金属的叠氮化物及其混合物，在至少一种溶剂中，（B）将来自步骤（A）的溶液施加到基材上，（C） 在20至200℃的温度下对来自步骤（B）的基底进行热处理，以将至少一种前体化合物转化为至少一种半导体金属氧化物，其中如果电 中性[（OH）x（NH3）yZn] z其中x，y和z各自独立地为0.01〜10作为步骤（A）中的前体化合物，通过使氧化锌或氢氧化锌与氨反应得到 已经涂覆有至少一种半导体金属氧化物并且可以通过该方法获得的衬底，用于电子部件中的该衬底以及制备电中性[（OH）x（NH 3）y Zn] z的方法​​，其中 x，y和z各自独立地为0.01〜10，通过使氧化锌和/或氢氧化锌与氨反应。