公开(公告)号：US20160232973A1

公开(公告)日：2016-08-11

申请号：US14994173

申请日：2016-01-13

申请人： WON-TAECK JUNG

发明人： WON-TAECK JUNG

IPC分类号： G11C16/08 ,  G11C16/04 ,  G11C16/34

CPC分类号： G11C16/08 ,  G11C16/0483 ,  G11C16/3427

摘要： A nonvolatile memory includes a plurality of memory blocks and an address decoder. The address decoder is configured to activate a block word line corresponding to the memory blocks in common when one memory block is selected among the memory blocks, supply voltages to word lines of the selected memory block among the memory blocks, and float word lines of an unselected memory block among the memory blocks.

摘要翻译： 非易失性存储器包括多个存储块和地址解码器。 地址解码器被配置为当在存储块中选择一个存储器块时，在存储块中的所选择的存储器块的字线的电源电压以及存储块中的浮动字线之间激活与存储块相对应的块字线 内存块中未选择的内存块。

公开(公告)号：US09190151B2

公开(公告)日：2015-11-17

申请号：US14153164

申请日：2014-01-13

申请人： Sang-Wan Nam ,  Won-Taeck Jung

发明人： Sang-Wan Nam ,  Won-Taeck Jung

IPC分类号： G11C11/34 ,  G11C16/04 ,  G11C16/34

CPC分类号： G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/24 ,  G11C16/26 ,  G11C16/3427

摘要： A nonvolatile memory device performs a read operation comprising first and second intervals. In the first interval the device applies a turn-on voltage to string selection lines and ground selection lines connected to the string selection transistors and the ground selection transistors, respectively. In the second interval, the device applies a turn-off voltage to unselected string selection lines and unselected ground selection lines while continuing to apply the turn-on voltage to a selected string selection line and a selected ground selection line. In both the first and second intervals, the device applies a first read voltage to a selected wordline connected to memory cells to be read by the read operation and applying a second read voltage to unselected wordlines among connected to memory cells not to be read by the read operation.

摘要翻译： 非易失性存储器件执行包括第一和第二间隔的读取操作。 在第一间隔期间，器件分别对串联选择线和连接到串选择晶体管和接地选择晶体管的选择线施加导通电压。 在第二间隔期间，器件对未选择的串选择线和未选择的接地选择线施加关断电压，同时继续对所选择的串选择线和选择的接地选择线施加导通电压。 在第一和第二间隔中，设备将第一读取电压施加到连接到要由读取操作读取的存储器单元的选定字线，并将第二读取电压施加到连接到不被读取的存储器单元读取的未选字线 读操作。

公开(公告)号：US08908431B2

公开(公告)日：2014-12-09

申请号：US13607038

申请日：2012-09-07

申请人： Sunil Shim ,  Jinman Han ,  Sang-Wan Nam ,  Won-Taeck Jung

发明人： Sunil Shim ,  Jinman Han ,  Sang-Wan Nam ,  Won-Taeck Jung

IPC分类号： G11C16/10 ,  H01L27/115 ,  H01L29/792 ,  G11C16/34 ,  G11C16/16

CPC分类号： G11C16/3418 ,  G11C16/10 ,  G11C16/14 ,  G11C16/16 ,  G11C16/349 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/7926

摘要： According to example embodiments, a control method of a nonvolatile memory device, which includes a plurality of memory blocks on a substrate, each memory block including a plurality of sub blocks stacked in a direction perpendicular to the substrate and being configured to be erased independently and each sub block including a plurality of memory cells stacked in the direction perpendicular to the substrate. The control method includes comparing a count value of a first memory block with a reference value, the count value determined according to the number of program, read, or erase operations executed at the first memory block after data is programmed in the first memory block; and if the count value is greater than or equal to the reference value, performing a reprogram operation in which data programmed in first the memory block is read and the read data is programmed in a second memory block.

摘要翻译： 根据示例性实施例，一种非易失性存储器件的控制方法，其包括在衬底上的多个存储块，每个存储块包括沿垂直于衬底的方向堆叠的多个子块，并且被配置为独立擦除， 每个子块包括在垂直于衬底的方向上堆叠的多个存储单元。 控制方法包括将第一存储块的计数值与参考值进行比较，所述计数值根据在第一存储器块中的数据被编程之后在第一存储器块执行的程序，读取或擦除操作的数量确定; 并且如果所述计数值大于或等于所述参考值，则执行重新编程操作，其中在第一存储器块中编程的数据被读取并且所读取的数据被编程在第二存储器块中。

公开(公告)号：US20150009760A1

公开(公告)日：2015-01-08

申请号：US14153164

申请日：2014-01-13

申请人： SANG-WAN NAM ,  WON-TAECK JUNG

发明人： SANG-WAN NAM ,  WON-TAECK JUNG

IPC分类号： G11C16/26 ,  G11C16/04

CPC分类号： G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/24 ,  G11C16/26 ,  G11C16/3427

摘要： A nonvolatile memory device performs a read operation comprising first and second intervals. In the first interval the device applies a turn-on voltage to string selection lines and ground selection lines connected to the string selection transistors and the ground selection transistors, respectively. In the second interval, the device applies a turn-off voltage to unselected string selection lines and unselected ground selection lines while continuing to apply the turn-on voltage to a selected string selection line and a selected ground selection line. In both the first and second intervals, the device applies a first read voltage to a selected wordline connected to memory cells to be read by the read operation and applying a second read voltage to unselected wordlines among connected to memory cells not to be read by the read operation.

摘要翻译： 非易失性存储器件执行包括第一和第二间隔的读取操作。 在第一间隔期间，器件分别对串联选择线和连接到串选择晶体管和接地选择晶体管的选择线施加导通电压。 在第二间隔期间，器件对未选择的串选择线和未选择的接地选择线施加关断电压，同时继续对所选择的串选择线和选择的接地选择线施加导通电压。 在第一和第二间隔中，设备将第一读取电压施加到连接到要由读取操作读取的存储器单元的选定字线，并将第二读取电压施加到连接到不被读取的存储器单元读取的未选字线 读操作。

公开(公告)号：US20130007353A1

公开(公告)日：2013-01-03

申请号：US13607038

申请日：2012-09-07

申请人： Sunil SHIM ,  Jinman HAN ,  Sang-Wan NAM ,  Won-Taeck JUNG

发明人： Sunil SHIM ,  Jinman HAN ,  Sang-Wan NAM ,  Won-Taeck JUNG

IPC分类号： G06F12/02

CPC分类号： G11C16/3418 ,  G11C16/10 ,  G11C16/14 ,  G11C16/16 ,  G11C16/349 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/7926

摘要： According to example embodiments, a control method of a nonvolatile memory device, which includes a plurality of memory blocks on a substrate, each memory block including a plurality of sub blocks stacked in a direction perpendicular to the substrate and being configured to be erased independently and each sub block including a plurality of memory cells stacked in the direction perpendicular to the substrate. The control method includes comparing a count value of a first memory block with a reference value, the count value determined according to the number of program, read, or erase operations executed at the first memory block after data is programmed in the first memory block; and if the count value is greater than or equal to the reference value, performing a reprogram operation in which data programmed in first the memory block is read and the read data is programmed in a second memory block.

公开(公告)号：US08902651B2

公开(公告)日：2014-12-02

申请号：US13648290

申请日：2012-10-10

申请人： DongHun Kwak ,  Sang-Won Park ,  Won-Taeck Jung

发明人： DongHun Kwak ,  Sang-Won Park ,  Won-Taeck Jung

IPC分类号： G11C16/04 ,  H01L27/115 ,  G11C16/34 ,  G11C16/10

CPC分类号： G11C16/10 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/26 ,  G11C16/3459 ,  H01L27/1157 ,  H01L27/11582

摘要： Disclosed are a program method and a nonvolatile memory device. The method includes receiving program data to be programmed in memory cells; reading the memory cells to judge an erase state and at least one program state; performing a state read operation in which the at least one program state is read using a plurality of state read voltages; and programming the program data in the memory cells using a plurality of verification voltages having different levels according to a result of the state read operation. Also disclosed are methods using a plurality of verification voltages selected based on factors which may affect a threshold voltage shift or other characteristic representing the data of a memory cell after programming.

摘要翻译： 公开了一种程序方法和非易失性存储装置。 该方法包括接收要在存储器单元中编程的程序数据; 读取存储单元以判断擦除状态和至少一个程序状态; 执行使用多个状态读取电压读取所述至少一个程序状态的状态读取操作; 以及根据状态读取操作的结果，使用具有不同电平的多个验证电压对存储器单元中的程序数据进行编程。 还公开了使用基于可能影响阈值电压偏移的因素而选择的多个验证电压的方法或者在编程之后表示存储器单元的数据的其他特性的方法。

公开(公告)号：US20130094294A1

公开(公告)日：2013-04-18

申请号：US13648290

申请日：2012-10-10

申请人： DongHun KWAK ,  Sang-Won PARK ,  Won-Taeck JUNG

发明人： DongHun KWAK ,  Sang-Won PARK ,  Won-Taeck JUNG

IPC分类号： G11C16/10

CPC分类号： G11C16/10 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/26 ,  G11C16/3459 ,  H01L27/1157 ,  H01L27/11582

摘要： Disclosed are a program method and a nonvolatile memory device. The method includes receiving program data to be programmed in memory cells; reading the memory cells to judge an erase state and at least one program state; performing a state read operation in which the at least one program state is read using a plurality of state read voltages; and programming the program data in the memory cells using a plurality of verification voltages having different levels according to a result of the state read operation. Also disclosed are methods using a plurality of verification voltages selected based on factors which may affect a threshold voltage shift or other characteristic representing the data of a memory cell after programming.

公开(公告)号：US09978454B2

公开(公告)日：2018-05-22

申请号：US14994173

申请日：2016-01-13

申请人： Won-Taeck Jung

发明人： Won-Taeck Jung

IPC分类号： G11C16/08 ,  G11C16/04 ,  G11C16/34

CPC分类号： G11C16/08 ,  G11C16/0483 ,  G11C16/3427

摘要： A nonvolatile memory includes a plurality of memory blocks and an address decoder. The address decoder is configured to activate a block word line corresponding to the memory blocks in common when one memory block is selected among the memory blocks, supply voltages to word lines of the selected memory block among the memory blocks, and float word lines of an unselected memory block among the memory blocks.

公开(公告)号：US09147492B2

公开(公告)日：2015-09-29

申请号：US14546477

申请日：2014-11-18

申请人： Sunil Shim ,  Jin-Man Han ,  Sang-Wan Nam ,  Won-Taeck Jung

发明人： Sunil Shim ,  Jin-Man Han ,  Sang-Wan Nam ,  Won-Taeck Jung

IPC分类号： G11C16/00 ,  G11C16/34 ,  G11C16/10 ,  G11C16/16 ,  H01L27/115 ,  H01L29/792 ,  G11C16/14

CPC分类号： G11C16/3418 ,  G11C16/10 ,  G11C16/14 ,  G11C16/16 ,  G11C16/349 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/7926

摘要： According to example embodiments, a control method of a nonvolatile memory device, which includes a plurality of memory blocks on a substrate, each memory block including a plurality of sub blocks stacked in a direction perpendicular to the substrate and being configured to be erased independently and each sub block including a plurality of memory cells stacked in the direction perpendicular to the substrate. The control method includes comparing a count value of a first memory block with a reference value, the count value determined according to the number of program, read, or erase operations executed at the first memory block after data is programmed in the first memory block; and if the count value is greater than or equal to the reference value, performing a reprogram operation in which data programmed in first the memory block is read and the read data is programmed in a second memory block.

摘要翻译： 根据示例性实施例，一种非易失性存储器件的控制方法，其包括在衬底上的多个存储块，每个存储块包括沿垂直于衬底的方向堆叠的多个子块，并且被配置为独立擦除， 每个子块包括在垂直于衬底的方向上堆叠的多个存储单元。 控制方法包括将第一存储块的计数值与参考值进行比较，所述计数值根据在第一存储器块中的数据被编程之后在第一存储器块执行的程序，读取或擦除操作的数量确定; 并且如果所述计数值大于或等于所述参考值，则执行重新编程操作，其中在第一存储器块中编程的数据被读取并且所读取的数据被编程在第二存储器块中。

公开(公告)号：US20150078087A1

公开(公告)日：2015-03-19

申请号：US14546477

申请日：2014-11-18

申请人： Sunil SHIM ,  Jin-Man HAN ,  Sang-Wan NAM ,  Won-Taeck JUNG

发明人： Sunil SHIM ,  Jin-Man HAN ,  Sang-Wan NAM ,  Won-Taeck JUNG

IPC分类号： G11C16/34 ,  G11C16/14

CPC分类号： G11C16/3418 ,  G11C16/10 ,  G11C16/14 ,  G11C16/16 ,  G11C16/349 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/7926

摘要： According to example embodiments, a control method of a nonvolatile memory device, which includes a plurality of memory blocks on a substrate, each memory block including a plurality of sub blocks stacked in a direction perpendicular to the substrate and being configured to be erased independently and each sub block including a plurality of memory cells stacked in the direction perpendicular to the substrate. The control method includes comparing a count value of a first memory block with a reference value, the count value determined according to the number of program, read, or erase operations executed at the first memory block after data is programmed in the first memory block; and if the count value is greater than or equal to the reference value, performing a reprogram operation in which data programmed in first the memory block is read and the read data is programmed in a second memory block.

摘要翻译： 根据示例性实施例，一种非易失性存储器件的控制方法，其包括在衬底上的多个存储块，每个存储块包括沿垂直于衬底的方向堆叠的多个子块，并且被配置为独立擦除， 每个子块包括在垂直于衬底的方向上堆叠的多个存储单元。 控制方法包括将第一存储块的计数值与参考值进行比较，所述计数值根据在第一存储器块中的数据被编程之后在第一存储器块执行的程序，读取或擦除操作的数量确定; 并且如果所述计数值大于或等于所述参考值，则执行重新编程操作，其中在第一存储器块中编程的数据被读取并且所读取的数据被编程在第二存储器块中。