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公开(公告)号：US4797895A
公开(公告)日：1989-01-10
申请号：US881260
申请日：1986-07-02
申请人： Yoshihiro Kokubo , Wataru Susaki
发明人： Yoshihiro Kokubo , Wataru Susaki
CPC分类号： H01S5/02248 , H01L2224/48091 , H01S5/005 , H01S5/0071 , H01S5/0683
摘要： A semiconductor laser apparatus in accordance with the present invention comprise: a semiconductor laser chip including a resonator with a couple of opposite end faces of which one is provided with an antireflective coating and the other with a highly reflective coating; a stem having a main surface to which the chip is attached with the end faces being vertical to the main surface; and a photoelectric conversion device, a major surface of which absorbs a part of a laser beam emitted from said one end face thereby to monitor intensity of the beam and reflects the remaining part of the beam for practical use.
摘要翻译： 根据本发明的半导体激光装置包括：半导体激光芯片，其包括具有两个相对端面的谐振器，其中一个具有抗反射涂层，另一个具有高反射涂层; 具有主表面的杆，所述芯片附接有所述端面，所述主表面垂直于所述主表面; 以及光电转换装置，其主表面吸收从所述一个端面发射的激光束的一部分，从而监测光束的强度并反射出实际使用的光束的剩余部分。
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公开(公告)号：US4504328A
公开(公告)日：1985-03-12
申请号：US534113
申请日：1983-09-20
IPC分类号： C30B19/06 , C30B19/10 , H01L21/208 , H01S5/00
CPC分类号： C30B19/063 , C30B19/10 , H01L21/02546 , H01L21/02625 , H01L21/02628
摘要： A first growth melting solution which has been used for the growth of a first layer is first replaced with a third melting solution and then with a second growth melting solution for the growth of a second layer. Using the third melting solution of a composition intermediate the first and second melting solutions effectively suppresses supersaturate or unsaturation of the solute during replacement of the melting solutions.
摘要翻译： 用于第一层生长的第一生长熔解溶液首先被第三熔解溶液替代，然后用第二生长熔解溶液代替第二层生长。 使用第一和第二熔融溶液中间的组合物的第三熔融溶液在更换熔融溶液期间有效地抑制溶质的过饱和或不饱和。
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公开(公告)号：US4277759A
公开(公告)日：1981-07-07
申请号：US40085
申请日：1979-05-17
CPC分类号： H01L33/24 , H01S5/2203 , H01S5/021 , H01S5/0224 , H01S5/024 , H01S5/0422 , H01S5/2238 , H01S5/3203
摘要： A first N-AlGaAs and a second N-GaAs layer are successively grown on an I-GaAs substrate. A third N-AlGaAs, a fourth P-AlGaAs and a fifth N-GaAs layer superpose one another on the second layer except for one lateral portion. Those portions of the five layers remote from the exposed second layer portion are changed into a P.sup.+ type and surrounded by a P zone. A positive and a negative electrode are located on the fifth layer and the exposed second layer portion respectively. The negative electrode is nearest to a laser region located in the second layer and can be secured to a heat sink.
摘要翻译： 在I-GaAs衬底上依次生长第一N-AlGaAs和第二N-GaAs层。 除了一个侧面部分之外，第三个N-AlGaAs，第四个P-AlGaAs和第五个N-GaAs层彼此叠置在第二层上。 远离曝光的第二层部分的五层的那些部分被改变为P +型并被P区包围。 正极和负极分别位于第五层和暴露的第二层部分上。 负极最靠近位于第二层的激光区域，并且可以固定到散热器。
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公开(公告)号：US4757509A
公开(公告)日：1988-07-12
申请号：US888398
申请日：1986-07-23
申请人： Kunihiko Isshiki , Wataru Susaki
发明人： Kunihiko Isshiki , Wataru Susaki
CPC分类号： H01S5/16
摘要： Laser light guided by a coupled waveguide (formed by difference in refractive index between n-type and p-type AlGaAs clad layers (2) and (4) and an undoped AlGaAs active layer (3) and difference in refractive index between the p-type AlGaAs clad layers (4) and (7) and a p-type AlGaAs waveguide layer (6)) is guided only by the p-type AlGaAs waveguide layer (6) in the vicinity of end surfaces (40, 42), not to be coupled with the undoped AlGaAs active layer (3). Therefore, surface regions of the end surfaces (40, 42) reflecting the laser light are formed by the p-type AlGaAs clad layers (4, 7) and the p-type AlGaAs waveguide layer (6) being larger in forbidden bandwidth.
摘要翻译： 由耦合波导引导的激光（由n型和p型AlGaAs覆盖层（2）和（4）之间的折射率差异和未掺杂的AlGaAs有源层（3）形成的折射率差异， （4）和（7）和p型AlGaAs波导层（6））仅在端面（40,42）附近由p型AlGaAs波导层（6）引导，而不是由p型AlGaAs波导层 与未掺杂的AlGaAs活性层（3）耦合。 因此，反射激光的端面（40,42）的表面区域由p型AlGaAs覆层（4,7）形成，p型AlGaAs波导层（6）的禁带宽度较大。
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公开(公告)号：US5394417A
公开(公告)日：1995-02-28
申请号：US150884
申请日：1993-11-12
申请人： Masayoshi Takemi , Norio Hayafuji , Wataru Susaki
发明人： Masayoshi Takemi , Norio Hayafuji , Wataru Susaki
CPC分类号： B82Y20/00 , H01S5/32308 , H01S5/343 , H01S2302/00 , H01S5/2207 , H01S5/32333 , H01S5/34313 , H01S5/3434
摘要： A semiconductor laser for producing visible light includes a first conductivity type semiconductor substrate; a first conductivity type semiconductor first cladding layer, a semiconductor active layer of GaAs.sub.1-y P.sub.y (y.ltoreq.0.45), and a second conductivity type second cladding layer, the first cladding layer, the active layer, and the second cladding layer being successively disposed on the semiconductor substrate, the first and second cladding layers having substantially the same composition and a different composition from the active layer, thereby forming heterojunctions with the active layer, and having a lattice constant different from the lattice constant of the active layer and introducing stress into the active layer without producing dislocations in the active layer; and first and second electrodes electrically connected to the substrate and the second cladding layer, respectively.
摘要翻译： 一种用于产生可见光的半导体激光器包括第一导电型半导体衬底; 第一导电型半导体第一包层，GaAs1-yPy（y <0.45）的半导体有源层和第二导电型第二包覆层，第一包层，有源层和第二包层依次 所述第一和第二包覆层具有与所述有源层基本上相同的组成和不同的组成，由此与所述有源层形成异质结，并且具有不同于所述有源层的晶格常数的晶格常数并引入 施加到活性层中而不会在活性层中产生位错; 以及分别与基板和第二覆层电连接的第一和第二电极。
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公开(公告)号：US4841532A
公开(公告)日：1989-06-20
申请号：US119340
申请日：1987-11-10
申请人： Hisao Kumabe , Wataru Susaki
发明人： Hisao Kumabe , Wataru Susaki
CPC分类号： H01S5/164 , Y10S148/095 , Y10S148/168
摘要： A method for producing a semiconductor laser which comprises sequentially depositing a lower cladding layer, an active layer, and an upper cladding layer on a substrate, forming a V shaped groove in the deposited layers at least reaching the lower cladding layer, the groove extending in a direction perpendicular to the direction between the surfaces that are to become resonator end surfaces, growing a semiconductor layer having a larger energy band gap than that of the active layer in the groove while retaining the V shaped groove, and cleaving the substrate and layers along the V shaped groove.
摘要翻译： 一种制造半导体激光器的方法，包括在基板上依次沉积下包层，有源层和上包层，在沉积层中形成至少到达下包层的V形槽，所述凹槽在 垂直于要成为谐振器端面的表面之间的方向的方向，在保持V形槽的同时生长具有比沟槽中的有源层的能带隙更大的能带隙的半导体层，并且沿着 V形槽。
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公开(公告)号：US4815082A
公开(公告)日：1989-03-21
申请号：US870327
申请日：1986-06-03
CPC分类号： H01S5/16 , H01S5/2232 , H01S5/106 , H01S5/2235
摘要： A semiconductor laser device in which the thickness of an active layer is made smaller than or equal to 0.04 .mu.m only in regions near the laser light emitting facets and the active layer in the other inner region is made to have a sufficient thickness not to cause a conspicuous deterioration in quality of the layer, that is, a thickness larger than 0.04 .mu.m.
摘要翻译： 仅在激光发射小面附近的区域和其他内部区域中的有源层的有源层的厚度小于或等于0.04μm的半导体激光器件被制成具有足够的厚度，不会导致 层的质量明显恶化，即厚度大于0.04μm。
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公开(公告)号：US4813050A
公开(公告)日：1989-03-14
申请号：US54764
申请日：1987-05-27
申请人： Akihiro Shima , Wataru Susaki
发明人： Akihiro Shima , Wataru Susaki
CPC分类号： H01S5/16 , H01S5/1064 , H01S5/2201 , H01S5/2232 , H01S5/2235
摘要： A high-power AlGaAs/GaAs laser device comprises: a ridge formed on the top surface of a substrate from one end thereof to the opposite end, wherein the width of the ridge is made narrower in regions near both the ends and wider in a middle region; a depression is formed in the wider region of the ridge; a clad layer is grown epitaxially over the top surface of the substrate; and an active layer is grown epitaxially on the clad layer, wherein the thickness of the active layer is thinner in portions just above the narrower ridge regions and relatively thicker in a portion just above the wider ridge region.
摘要翻译： 高功率AlGaAs / GaAs激光器件包括：从其一端到另一端形成在衬底的顶表面上的脊，其中脊的宽度在两个端部附近的区域中较窄，并且在中间较宽 地区; 在山脊的较宽区域形成凹陷; 包覆层在衬底的顶表面上外延生长; 并且在包覆层上外延生长活性层，其中有源层的厚度在较窄脊区域正上方的部分更薄，并且在较宽脊区域正上方的部分中相对较厚。
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公开(公告)号：US4166278A
公开(公告)日：1979-08-28
申请号：US892406
申请日：1978-03-29
申请人： Wataru Susaki , Hirofumi Namizaki
发明人： Wataru Susaki , Hirofumi Namizaki
CPC分类号： H01S5/2203 , H01L33/0025 , Y10S438/912
摘要： N type CaAlAs, GaAs and GaAlAs layers are successively grown on a semi-insulating GaAs substrate doped with Cr to form a semiconductor chip. Predetermined portions of those layers are selectively etched away to a depth reaching the substrate. Then a P type GaAlAs layer is epitaxially grown on the etched portions to restore the original shape of the chip. The chip is heated to form a pn junction in at least the GaAs layer serving as a light emitting region.
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公开(公告)号：US4183038A
公开(公告)日：1980-01-08
申请号：US892407
申请日：1978-03-29
申请人： Hirofumi Namizaki , Wataru Susaki , Hirofumi Kan
发明人： Hirofumi Namizaki , Wataru Susaki , Hirofumi Kan
CPC分类号： H01S5/2203 , H01L33/0025
摘要： N type GaAlAs, GaAs and GaAlAs layers are successively grown on a semi-insulating GaAs substrate doped with Cr. Zn is diffused into predetermined portions of those layers to a depth reaching the substrate to form pn junctions between the original n type regions of the layers and their regions are converted to the p from the n type conductivity. The pn junction formed in the GaAs layer serves as a light emitting region.
摘要翻译： 在掺杂有Cr的半绝缘GaAs衬底上连续生长N型GaAlAs，GaAs和GaAlAs层。 Zn扩散到这些层的预定部分到到达衬底的深度，以在层的原始n型区域之间形成pn结，并且它们的区域从n型导电率转换成p。 形成在GaAs层中的pn结用作发光区域。
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