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公开(公告)号：US08262928B2
公开(公告)日：2012-09-11
申请号：US12777532
申请日：2010-05-11
Applicant: Bong-Kyun Kim , Jong-Hyun Choung , Byeong-Jin Lee , Sun-Young Hong , Hong-Sick Park , Shi-Yul Kim , Ki-Beom Lee , Sam-Young Cho , Sang-Woo Kim , Hyun-Cheol Shin , Won-Guk Seo
Inventor： Bong-Kyun Kim , Jong-Hyun Choung , Byeong-Jin Lee , Sun-Young Hong , Hong-Sick Park , Shi-Yul Kim , Ki-Beom Lee , Sam-Young Cho , Sang-Woo Kim , Hyun-Cheol Shin , Won-Guk Seo
CPC classification number: C23F1/26 , C23F1/18 , H01L21/32134 , H01L27/124 , H01L29/458
Abstract: An etchant includes about 0.1 percent by weight to about 30 percent by weight of ammonium persulfate (NH4)2S2O8, about 0.1 percent by weight to about 10 percent by weight of an inorganic acid, about 0.1 percent by weight to about 10 percent by weight of an acetate salt, about 0.01 percent by weight to about 5 percent by weight of a fluorine-containing compound, about 0.01 percent by weight to about 5 percent by weight of a sulfonic acid compound, about 0.01 percent by weight to about 2 percent by weight of an azole compound, and a remainder of water. Accordingly, the etchant may have high stability to maintain etching ability. Thus, manufacturing margins may be improved so that manufacturing costs may be reduced.
Abstract translation: 蚀刻剂包括约0.1重量％至约30重量％的过硫酸铵（NH 4）2 S 2 O 8，约0.1重量％至约10重量％的无机酸，约0.1重量％至约10重量％的 约0.01重量％至约5重量％的含氟化合物的乙酸盐，约0.01重量％至约5重量％的磺酸化合物，约0.01重量％至约2重量％ 的唑类化合物，剩余的水。 因此，蚀刻剂可能具有高稳定性以保持蚀刻能力。 因此，可以提高制造裕度，从而可以降低制造成本。
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公开(公告)号：US08354288B2
公开(公告)日：2013-01-15
申请号：US13566239
申请日：2012-08-03
Applicant: Bong-Kyun Kim , Jong-Hyun Choung , Byeong-Jin Lee , Sun-Young Hong , Hong-Sick Park , Shi-Yul Kim , Ki-Beom Lee , Sam-Young Cho , Sang-Woo Kim , Hyun-Cheol Shin , Won-Guk Seo
Inventor： Bong-Kyun Kim , Jong-Hyun Choung , Byeong-Jin Lee , Sun-Young Hong , Hong-Sick Park , Shi-Yul Kim , Ki-Beom Lee , Sam-Young Cho , Sang-Woo Kim , Hyun-Cheol Shin , Won-Guk Seo
IPC: H01L21/461
CPC classification number: C23F1/26 , C23F1/18 , H01L21/32134 , H01L27/124 , H01L29/458
Abstract: An etchant includes about 0.1 percent by weight to about 30 percent by weight of ammonium persulfate (NH4)2S2O8, about 0.1 percent by weight to about 10 percent by weight of an inorganic acid, about 0.1 percent by weight to about 10 percent by weight of an acetate salt, about 0.01 percent by weight to about 5 percent by weight of a fluorine-containing compound, about 0.01 percent by weight to about 5 percent by weight of a sulfonic acid compound, about 0.01 percent by weight to about 2 percent by weight of an azole compound, and a remainder of water. Accordingly, the etchant may have high stability to maintain etching ability. Thus, manufacturing margins may be improved so that manufacturing costs may be reduced.
Abstract translation: 蚀刻剂包括约0.1重量％至约30重量％的过硫酸铵（NH 4）2 S 2 O 8，约0.1重量％至约10重量％的无机酸，约0.1重量％至约10重量％ 约0.01重量％至约5重量％的含氟化合物的乙酸盐，约0.01重量％至约5重量％的磺酸化合物，约0.01重量％至约2重量％ 的唑类化合物，剩余的水。 因此，蚀刻剂可能具有高稳定性以保持蚀刻能力。 因此，可以提高制造裕度，从而可以降低制造成本。
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3.发明申请ETCHANT FOR METAL WIRING AND METHOD FOR MANUFACTURING METAL WIRING USING THE SAME 有权金属接线用金属接头及其制造金属接线方法公开(公告)号：US20110226727A1
公开(公告)日：2011-09-22
申请号：US13032563
申请日：2011-02-22
Applicant: Nam-Seok SUH , Sun-Young HONG , Jong-Hyun CHOUNG , Bong-Kyun KIM , Hong-Sick PARK , Jean-Ho SONG , Wang-Woo LEE , Do-Won KIM , Sang-Woo KIM , Won-Guk SEO , Hyun-Cheol SHIN , Ki-Beom LEE , Sam-Young CHO
Inventor： Nam-Seok SUH , Sun-Young HONG , Jong-Hyun CHOUNG , Bong-Kyun KIM , Hong-Sick PARK , Jean-Ho SONG , Wang-Woo LEE , Do-Won KIM , Sang-Woo KIM , Won-Guk SEO , Hyun-Cheol SHIN , Ki-Beom LEE , Sam-Young CHO
CPC classification number: C09K13/08 , C23F1/18 , C23F1/26 , C23F1/44 , H01L21/28088 , H01L21/32134 , H01L27/1214 , H01L27/124 , H05K3/067
Abstract: Exemplary embodiments of the present invention provide a metal wiring etchant. A metal wiring etchant according to an exemplary embodiment of the present invention includes ammonium persulfate, an organic acid, an ammonium salt, a fluorine-containing compound, a glycol-based compound, and an azole-based compound.
Abstract translation: 本发明的示例性实施方案提供金属线路蚀刻剂。 根据本发明的示例性实施方式的金属线蚀刻剂包括过硫酸铵，有机酸，铵盐，含氟化合物，二醇类化合物和唑类化合物。
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4.发明授权Etchant for metal wiring and method for manufacturing metal wiring using the same 有权金属布线用蚀刻剂及使用其的金属布线的制造方法公开(公告)号：US08377325B2
公开(公告)日：2013-02-19
申请号：US13032563
申请日：2011-02-22
Applicant: Nam-Seok Suh , Sun-Young Hong , Jong-Hyun Choung , Bong-Kyun Kim , Hong-Sick Park , Jean-Ho Song , Wang-Woo Lee , Do-Won Kim , Sang-Woo Kim , Won-Guk Seo , Hyun-Cheol Shin , Ki-Beom Lee , Sam-Young Cho
Inventor： Nam-Seok Suh , Sun-Young Hong , Jong-Hyun Choung , Bong-Kyun Kim , Hong-Sick Park , Jean-Ho Song , Wang-Woo Lee , Do-Won Kim , Sang-Woo Kim , Won-Guk Seo , Hyun-Cheol Shin , Ki-Beom Lee , Sam-Young Cho
CPC classification number: C09K13/08 , C23F1/18 , C23F1/26 , C23F1/44 , H01L21/28088 , H01L21/32134 , H01L27/1214 , H01L27/124 , H05K3/067
Abstract: Exemplary embodiments of the present invention provide a metal wiring etchant. A metal wiring etchant according to an exemplary embodiment of the present invention includes ammonium persulfate, an organic acid, an ammonium salt, a fluorine-containing compound, a glycol-based compound, and an azole-based compound.
Abstract translation: 本发明的示例性实施方案提供金属线路蚀刻剂。 根据本发明的示例性实施方式的金属线蚀刻剂包括过硫酸铵，有机酸，铵盐，含氟化合物，二醇类化合物和唑类化合物。
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Patent Agency Ranking
公开(公告)号：US20100291722A1
公开(公告)日：2010-11-18
申请号：US12777532
申请日：2010-05-11
Applicant: Bong-Kyun Kim , Jong-Hyun Choung , Byeong-Jin Lee , Sun-Young Hong , Hong-Sick Park , Shi-Yul Kim , Ki-Beom Lee , Sam-Young Cho , Sang-Woo Kim , Hyun-Cheol Shin , Won-Guk Seo
Inventor： Bong-Kyun Kim , Jong-Hyun Choung , Byeong-Jin Lee , Sun-Young Hong , Hong-Sick Park , Shi-Yul Kim , Ki-Beom Lee , Sam-Young Cho , Sang-Woo Kim , Hyun-Cheol Shin , Won-Guk Seo
CPC classification number: C23F1/26 , C23F1/18 , H01L21/32134 , H01L27/124 , H01L29/458
Abstract: An etchant includes about 0.1 percent by weight to about 30 percent by weight of ammonium persulfate (NH4)2S2O8, about 0.1 percent by weight to about 10 percent by weight of an inorganic acid, about 0.1 percent by weight to about 10 percent by weight of an acetate salt, about 0.01 percent by weight to about 5 percent by weight of a fluorine-containing compound, about 0.01 percent by weight to about 5 percent by weight of a sulfonic acid compound, about 0.01 percent by weight to about 2 percent by weight of an azole compound, and a remainder of water. Accordingly, the etchant may have high stability to maintain etching ability. Thus, manufacturing margins may be improved so that manufacturing costs may be reduced.
Abstract translation: 蚀刻剂包括约0.1重量％至约30重量％的过硫酸铵（NH 4）2 S 2 O 8，约0.1重量％至约10重量％的无机酸，约0.1重量％至约10重量％的 约0.01重量％至约5重量％的含氟化合物的乙酸盐，约0.01重量％至约5重量％的磺酸化合物，约0.01重量％至约2重量％ 的唑类化合物，剩余的水。 因此，蚀刻剂可能具有高稳定性以保持蚀刻能力。 因此，可以提高制造裕度，从而可以降低制造成本。
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公开(公告)号：US20120295380A1
公开(公告)日：2012-11-22
申请号：US13566239
申请日：2012-08-03
Applicant: Bong-Kyun Kim , Jong-Hyun Choung , Byeong-Jin Lee , Sun-Young Hong , Hong-Sick Park , Shi-Yul Kim , Ki-Beom Lee , Sam-Young Cho , Sang-Woo Kim , Hyun-Cheol Shin , Won-Guk Seo
Inventor： Bong-Kyun Kim , Jong-Hyun Choung , Byeong-Jin Lee , Sun-Young Hong , Hong-Sick Park , Shi-Yul Kim , Ki-Beom Lee , Sam-Young Cho , Sang-Woo Kim , Hyun-Cheol Shin , Won-Guk Seo
IPC: H01L33/08
CPC classification number: C23F1/26 , C23F1/18 , H01L21/32134 , H01L27/124 , H01L29/458
Abstract: An etchant includes about 0.1 percent by weight to about 30 percent by weight of ammonium persulfate (NH4)2S2O8, about 0.1 percent by weight to about 10 percent by weight of an inorganic acid, about 0.1 percent by weight to about 10 percent by weight of an acetate salt, about 0.01 percent by weight to about 5 percent by weight of a fluorine-containing compound, about 0.01 percent by weight to about 5 percent by weight of a sulfonic acid compound, about 0.01 percent by weight to about 2 percent by weight of an azole compound, and a remainder of water. Accordingly, the etchant may have high stability to maintain etching ability. Thus, manufacturing margins may be improved so that manufacturing costs may be reduced.
Abstract translation: 蚀刻剂包括约0.1重量％至约30重量％的过硫酸铵（NH 4）2 S 2 O 8，约0.1重量％至约10重量％的无机酸，约0.1重量％至约10重量％的 约0.01重量％至约5重量％的含氟化合物的乙酸盐，约0.01重量％至约5重量％的磺酸化合物，约0.01重量％至约2重量％ 的唑类化合物，剩余的水。 因此，蚀刻剂可能具有高稳定性以保持蚀刻能力。 因此，可以提高制造裕度，从而可以降低制造成本。
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7.发明授权Etching composition, method of forming a metal pattern and method of manufacturing a display substrate 有权蚀刻组合物，形成金属图案的方法和制造显示基板的方法公开(公告)号：US08637399B2
公开(公告)日：2014-01-28
申请号：US13600392
申请日：2012-08-31
Applicant: Hong-Sick Park , Bong-Kyun Kim , Wang-Woo Lee , Ki-Beom Lee , Sam-Young Cho , Won-Guk Seo , Gyu-Po Kim
Inventor： Hong-Sick Park , Bong-Kyun Kim , Wang-Woo Lee , Ki-Beom Lee , Sam-Young Cho , Won-Guk Seo , Gyu-Po Kim
IPC: H01L21/311
CPC classification number: C09K13/06 , C23F1/18 , C23F1/34 , H01L21/32134
Abstract: An etching composition for a copper-containing layer includes about 0.1% to about 30% by weight of ammonium persulfate, about 0.1% to about 10% by weight of a sulfate, about 0.01% to about 5% by weight of an acetate and about 55% to about 99.79% by weight of water. The etching composition having improved stability during storage and an increased capacity for etching.
Abstract translation: 含铜层的蚀刻组合物包含约0.1％至约30％重量的过硫酸铵，约0.1％至约10％重量的硫酸盐，约0.01％至约5％重量的乙酸盐和约 55％至约99.79％的水。 蚀刻组合物在储存期间具有改进的稳定性和增加的蚀刻能力。
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8.发明申请ETCHING COMPOSITION, METHOD OF FORMING A METAL PATTERN AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE 有权蚀刻组合物，形成金属图案的方法和制造显示基板的方法公开(公告)号：US20130115770A1
公开(公告)日：2013-05-09
申请号：US13600392
申请日：2012-08-31
Applicant: Hong-Sick Park , Bong-Kyun Kim , Wang-Woo Lee , Ki-Beom Lee , Sam-Young Cho , Won-Guk Seo , Gyu-Po Kim
Inventor： Hong-Sick Park , Bong-Kyun Kim , Wang-Woo Lee , Ki-Beom Lee , Sam-Young Cho , Won-Guk Seo , Gyu-Po Kim
IPC: C09K13/00 , H01L21/302
CPC classification number: C09K13/06 , C23F1/18 , C23F1/34 , H01L21/32134
Abstract: An etching composition for a copper-containing layer includes about 0.1% to about 30% by weight of ammonium persulfate, about 0.1% to about 10% by weight of a sulfate, about 0.01% to about 5% by weight of an acetate and about 55% to about 99.79% by weight of water. The etching composition having improved stability during storage and an increased capacity for etching
Abstract translation: 含铜层的蚀刻组合物包含约0.1％至约30％重量的过硫酸铵，约0.1％至约10％重量的硫酸盐，约0.01％至约5％重量的乙酸盐和约 55％至约99.79％的水。 蚀刻组合物在储存期间具有改进的稳定性和增加的蚀刻能力
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公开(公告)号：US20080224092A1
公开(公告)日：2008-09-18
申请号：US12075966
申请日：2008-03-14
Applicant: Jong-Hyun CHOUNG , Hong-Sick PARK , Sun-Young HONG , Bong-Kyun KIM , Byeong-Jin LEE , Ji-Sun LEE , Ki-Beom LEE , Sam-Young CHO , Byung-Soo KU , Hyun-Cheol SHIN , Kwi-Hong PARK , Won-Guk SEO
Inventor： Jong-Hyun CHOUNG , Hong-Sick PARK , Sun-Young HONG , Bong-Kyun KIM , Byeong-Jin LEE , Ji-Sun LEE , Ki-Beom LEE , Sam-Young CHO , Byung-Soo KU , Hyun-Cheol SHIN , Kwi-Hong PARK , Won-Guk SEO
CPC classification number: C23F1/14 , H01L21/32134
Abstract: An etchant for a metal is described. In one example, the etchant includes ammonium persulfate ((NH4)2S2O8), an azole compound and water. The etchant does not include hydrogen peroxide. Thus, the etchant may etch a metal layer including copper so that an etched copper layer has a tapered profile. Furthermore, the etchant may have a high stability to maintain etching ability for a longer time. Thus, manufacturing margins may be improved so that manufacturing costs may be reduced.
Abstract translation: 描述了金属的蚀刻剂。 在一个实例中，蚀刻剂包括过硫酸铵（（NH 3）2 S 2 O 2 O 8）， 唑化合物和水。 蚀刻剂不包括过氧化氢。 因此，蚀刻剂可以蚀刻包括铜的金属层，使得蚀刻的铜层具有锥形轮廓。 此外，蚀刻剂可能具有高的稳定性，以保持较长时间的蚀刻能力。 因此，可以提高制造裕度，从而可以降低制造成本。
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