公开(公告)号：US08262928B2

公开(公告)日：2012-09-11

申请号：US12777532

申请日：2010-05-11

Applicant: Bong-Kyun Kim ,  Jong-Hyun Choung ,  Byeong-Jin Lee ,  Sun-Young Hong ,  Hong-Sick Park ,  Shi-Yul Kim ,  Ki-Beom Lee ,  Sam-Young Cho ,  Sang-Woo Kim ,  Hyun-Cheol Shin ,  Won-Guk Seo

Inventor： Bong-Kyun Kim ,  Jong-Hyun Choung ,  Byeong-Jin Lee ,  Sun-Young Hong ,  Hong-Sick Park ,  Shi-Yul Kim ,  Ki-Beom Lee ,  Sam-Young Cho ,  Sang-Woo Kim ,  Hyun-Cheol Shin ,  Won-Guk Seo

IPC: H01L33/44 ,  C09K13/08

CPC classification number: C23F1/26 ,  C23F1/18 ,  H01L21/32134 ,  H01L27/124 ,  H01L29/458

Abstract: An etchant includes about 0.1 percent by weight to about 30 percent by weight of ammonium persulfate (NH4)2S2O8, about 0.1 percent by weight to about 10 percent by weight of an inorganic acid, about 0.1 percent by weight to about 10 percent by weight of an acetate salt, about 0.01 percent by weight to about 5 percent by weight of a fluorine-containing compound, about 0.01 percent by weight to about 5 percent by weight of a sulfonic acid compound, about 0.01 percent by weight to about 2 percent by weight of an azole compound, and a remainder of water. Accordingly, the etchant may have high stability to maintain etching ability. Thus, manufacturing margins may be improved so that manufacturing costs may be reduced.

Abstract translation: 蚀刻剂包括约0.1重量％至约30重量％的过硫酸铵（NH 4）2 S 2 O 8，约0.1重量％至约10重量％的无机酸，约0.1重量％至约10重量％的 约0.01重量％至约5重量％的含氟化合物的乙酸盐，约0.01重量％至约5重量％的磺酸化合物，约0.01重量％至约2重量％ 的唑类化合物，剩余的水。 因此，蚀刻剂可能具有高稳定性以保持蚀刻能力。 因此，可以提高制造裕度，从而可以降低制造成本。

公开(公告)号：US08163095B2

公开(公告)日：2012-04-24

申请号：US13101973

申请日：2011-05-05

Applicant: Ji Sun Lee ,  Hong Sick Park ,  Jong Hyun Choung ,  Sun Young Hong ,  Bong Kyun Kim ,  Byeong Jin Lee ,  Byung Uk Kim ,  Jong Hyun Jeong ,  Suk II Yoon ,  Seong Bae Kim ,  Sung Gun Shin ,  Soon Beom Huh ,  Se Hwan Jung ,  Doo Young Jang

Inventor： Ji Sun Lee ,  Hong Sick Park ,  Jong Hyun Choung ,  Sun Young Hong ,  Bong Kyun Kim ,  Byeong Jin Lee ,  Byung Uk Kim ,  Jong Hyun Jeong ,  Suk II Yoon ,  Seong Bae Kim ,  Sung Gun Shin ,  Soon Beom Huh ,  Se Hwan Jung ,  Doo Young Jang

IPC: C11D7/50

CPC classification number: G03F7/425

Abstract: The present invention provides a stripping composition and a stripping method capable of easily stripping a color resist or an organic insulating film formed on a substrate to reuse the substrate when defects are found during a process of forming the color filter or organic insulating film on the substrate. In one embodiment, the stripping composition includes about 0.5 to about 45 wt % of hydroxide compound, about 10 to about 89 wt % of alkyleneglycolalkylether compound, about 5 to about 45 wt % of alkanolamine compound, and about 0.01 to about 5 wt % of inorganic salt compound. Advantageously, the stripping process can be performed without damaging a thin film transistor of a bottom substrate while removing the color resist or organic insulating film.

Abstract translation: 本发明提供了一种剥离组合物和剥离方法，其能够在形成基板上的滤色器或有机绝缘膜的过程中发现缺陷时容易地剥离形成在基板上的着色抗蚀剂或有机绝缘膜，以重新使用基板 。 在一个实施方案中，汽提组合物包含约0.5至约45重量％的氢氧化物化合物，约10至约89重量％的亚烷基二醇烷基醚化合物，约5至约45重量％的烷醇胺化合物和约0.01至约5重量％的 无机盐化合物。 有利地，可以在不损坏底部基板的薄膜晶体管的同时进行剥离处理，同时移除彩色抗蚀剂或有机绝缘膜。

公开(公告)号：US08158470B2

公开(公告)日：2012-04-17

申请号：US13018309

申请日：2011-01-31

Applicant: Jong Hyun Choung ,  Hong Sick Park ,  Sun Young Hong ,  Bong Kyun Kim ,  Bong Kyu Shin ,  Won Suk Shin ,  Byeong Jin Lee

Inventor： Jong Hyun Choung ,  Hong Sick Park ,  Sun Young Hong ,  Bong Kyun Kim ,  Bong Kyu Shin ,  Won Suk Shin ,  Byeong Jin Lee

IPC: H01L21/336

CPC classification number: H01L27/1288 ,  H01L27/124 ,  H01L27/1248

Abstract: A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor.

Abstract translation: 薄膜晶体管基板和制造薄膜晶体管基板的方法包括：形成栅极线和数据线，其中栅极绝缘层相互插入并限定基板上的像素区域，薄膜晶体管电连接到 栅极线和数据线，以及与栅极线和数据线中的至少一个重叠的阶梯结构发生图案; 在所述基板上形成具有由阶梯状结构发生图案形成的台阶状部分的钝化层; 形成具有对应于所述钝化层上的阶梯状结构部分的第二阶梯结构部分的光致抗蚀剂图案; 使用光致抗蚀剂图案作为掩模来图案化钝化层; 在所述基板上形成透明导电层; 以及去除透明导电层被穿透光致抗蚀剂图案的台阶结构部分的剥离剂覆盖的光致抗蚀剂图案，并形成连接到薄膜晶体管的像素电极。

公开(公告)号：US20110256485A1

公开(公告)日：2011-10-20

申请号：US13167587

申请日：2011-06-23

Applicant: Bong-Kyun KIM ,  Hong-Sick Park ,  Jong-Hyun Choung ,  Sun-Young Hong ,  Ji-Sun Lee ,  Byeong-Jin Lee ,  Kui-Jong Baek ,  Tai-Hyung Rhee ,  Yong-Sung Song

Inventor： Bong-Kyun KIM ,  Hong-Sick Park ,  Jong-Hyun Choung ,  Sun-Young Hong ,  Ji-Sun Lee ,  Byeong-Jin Lee ,  Kui-Jong Baek ,  Tai-Hyung Rhee ,  Yong-Sung Song

IPC: G03F7/20 ,  H01L33/62

CPC classification number: C09K13/06 ,  H01L29/458 ,  H01L29/4908

Abstract: An etchant composition that allows simplification and optimization of semiconductor manufacturing process is presented, along with a method of patterning a conductive layer using the etchant and a method of manufacturing a flat panel display using the etchant. The etchant includes nitric acid, phosphoric acid, acetic acid, and an acetate compound in addition to water.

Abstract translation: 提出了允许半导体制造工艺的简化和优化的蚀刻剂组合物，以及使用蚀刻剂图案化导电层的方法和使用蚀刻剂制造平板显示器的方法。 除了水之外，蚀刻剂包括硝酸，磷酸，乙酸和乙酸酯化合物。

公开(公告)号：US07985982B2

公开(公告)日：2011-07-26

申请号：US12391976

申请日：2009-02-24

Applicant: Bong-Kyun Kim ,  Hong-Sick Park ,  Jong-Hyun Choung ,  Sun-Young Hong ,  Ji-Sun Lee ,  Byeong-Jin Lee ,  Kui-Jong Baek ,  Tai-Hyung Rhee ,  Yong-Sung Song

Inventor： Bong-Kyun Kim ,  Hong-Sick Park ,  Jong-Hyun Choung ,  Sun-Young Hong ,  Ji-Sun Lee ,  Byeong-Jin Lee ,  Kui-Jong Baek ,  Tai-Hyung Rhee ,  Yong-Sung Song

IPC: H01L21/84

CPC classification number: C09K13/06 ,  H01L29/458 ,  H01L29/4908

Abstract: An etchant composition that allows simplification and optimization of semiconductor manufacturing process is presented, along with a method of patterning a conductive layer using the etchant and a method of manufacturing a flat panel display using the etchant. The etchant includes nitric acid, phosphoric acid, acetic acid, and an acetate compound in addition to water.

Abstract translation: 提出了允许半导体制造工艺的简化和优化的蚀刻剂组合物，以及使用蚀刻剂图案化导电层的方法和使用蚀刻剂制造平板显示器的方法。 除了水之外，蚀刻剂包括硝酸，磷酸，乙酸和乙酸酯化合物。

公开(公告)号：US07968507B2

公开(公告)日：2011-06-28

申请号：US12214658

申请日：2008-06-20

Applicant: Ji Sun Lee ,  Hong Sick Park ,  Jong Hyun Choung ,  Sun Young Hong ,  Bong Kyun Kim ,  Byeong Jin Lee ,  Byung Uk Kim ,  Jong Hyun Jeong ,  Suk Il Yoon ,  Seong Bae Kim ,  Sung Gun Shin ,  Soon Beom Huh ,  Se Hwan Jung ,  Doo Young Jang

Inventor： Ji Sun Lee ,  Hong Sick Park ,  Jong Hyun Choung ,  Sun Young Hong ,  Bong Kyun Kim ,  Byeong Jin Lee ,  Byung Uk Kim ,  Jong Hyun Jeong ,  Suk Il Yoon ,  Seong Bae Kim ,  Sung Gun Shin ,  Soon Beom Huh ,  Se Hwan Jung ,  Doo Young Jang

IPC: C11D7/06

CPC classification number: G03F7/425

Abstract: The present invention provides a stripping composition and a stripping method capable of easily stripping a color resist or an organic insulating film formed on a substrate to reuse the substrate when defects are found during a process of forming the color filter or organic insulating film on the substrate. In one embodiment, the stripping composition includes about 0.5 to about 45 wt % of hydroxide compound, about 10 to about 89 wt % of alkyleneglycolalkylether compound, about 5 to about 45 wt % of alkanolamine compound, and about 0.01 to about 5 wt % of inorganic salt compound. Advantageously, the stripping process can be performed without damaging a thin film transistor of a bottom substrate while removing the color resist or organic insulating film.

Abstract translation: 本发明提供了一种剥离组合物和剥离方法，其能够在形成基板上的滤色器或有机绝缘膜的过程中发现缺陷时容易地剥离形成在基板上的着色抗蚀剂或有机绝缘膜，以重新使用基板 。 在一个实施方案中，汽提组合物包含约0.5至约45重量％的氢氧化物化合物，约10至约89重量％的亚烷基二醇烷基醚化合物，约5至约45重量％的烷醇胺化合物和约0.01至约5重量％的 无机盐化合物。 有利地，可以在不损坏底部基板的薄膜晶体管的同时进行剥离处理，同时移除彩色抗蚀剂或有机绝缘膜。

公开(公告)号：US07824972B2

公开(公告)日：2010-11-02

申请号：US11985199

申请日：2007-11-13

Applicant: Jong-hyun Choung ,  Byeong-jin Lee ,  Hong-sick Park ,  Sun-young Hong ,  Bong-kyun Kim ,  Won-suk Shin

Inventor： Jong-hyun Choung ,  Byeong-jin Lee ,  Hong-sick Park ,  Sun-young Hong ,  Bong-kyun Kim ,  Won-suk Shin

IPC: H01L21/00 ,  H01L21/84

CPC classification number: H01L27/1288 ,  G02F1/136227 ,  H01L27/1214

Abstract: A thin film transistor substrate that has reduced production cost and defect rate is presented. The thin film transistor substrate includes a gate wiring line formed on an insulating substrate and including a gate electrode, a data wiring line formed on the gate wiring line and including a source electrode and a drain electrode, a passivation layer pattern formed on parts of the data wiring line other than the drain electrode and a pixel region, and a pixel electrode electrically connected to the drain electrode. The pixel electrode includes zinc oxide.

Abstract translation: 介绍了降低生产成本和缺陷率的薄膜晶体管基板。 薄膜晶体管基板包括形成在绝缘基板上并包括栅电极的栅极布线，形成在栅极布线上并包括源电极和漏电极的数据布线，形成在栅极布线的一部分上的钝化层图案 除了漏电极和像素区域之外的数据布线，以及与漏电极电连接的像素电极。 像素电极包括氧化锌。

公开(公告)号：US07776633B2

公开(公告)日：2010-08-17

申请号：US11696097

申请日：2007-04-03

Applicant: Jong-Hyun Choung ,  Hong-Sick Park ,  Joo-Ae Yoon ,  Jeong-Min Park ,  Doo-Hee Jung ,  Sun-Young Hong ,  Bong-Kyun Kim ,  Won-Suk Shin ,  Byeong-Jin Lee

Inventor： Jong-Hyun Choung ,  Hong-Sick Park ,  Joo-Ae Yoon ,  Jeong-Min Park ,  Doo-Hee Jung ,  Sun-Young Hong ,  Bong-Kyun Kim ,  Won-Suk Shin ,  Byeong-Jin Lee

IPC: H01L21/00

CPC classification number: H01L27/1288 ,  H01L27/1214

Abstract: A method of manufacturing a thin film transistor array panel, including: forming gate lines on a substrate; forming a gate insulating layer on the gate lines; forming semiconductor layers on the gate insulating layer; forming data lines and drain electrodes on the semiconductor layers; depositing a passivation layer on the data lines and the drain electrodes; forming a first photoresist layer including a first portion and a second portion that is thinner than the first portion on the passivation layer; forming a first preliminary contact hole exposing the data lines by etching the passivation layer by using the first photoresist layer as a mask; removing the second portion of the first photoresist; forming a first contact hole by expanding the first preliminary contact hole and opening portions by etching the passivation layer by using the first portion of the first photoresist layer as a mask; depositing a conductor layer; and forming pixel electrodes in the opening portions and a first contact assistant member in the first contact hole by removing the first photoresist layer and the conductor layer located thereon.

Abstract translation: 一种制造薄膜晶体管阵列面板的方法，包括：在衬底上形成栅极线; 在栅极线上形成栅极绝缘层; 在所述栅极绝缘层上形成半导体层; 在半导体层上形成数据线和漏电极; 在数据线和漏电极上沉积钝化层; 形成第一光致抗蚀剂层，其包括比钝化层上的第一部分更薄的第一部分和第二部分; 通过使用第一光致抗蚀剂层作为掩模，形成通过蚀刻钝化层而暴露数据线的第一预接触孔; 去除第一光致抗蚀剂的第二部分; 通过使用第一光致抗蚀剂层的第一部分作为掩模，通过蚀刻钝化层来扩展第一预接触孔和开口部来形成第一接触孔; 沉积导体层; 以及通过去除位于其上的第一光致抗蚀剂层和导体层，在开口部分中形成像素电极和第一接触孔中的第一接触辅助部件。

公开(公告)号：US07772021B2

公开(公告)日：2010-08-10

申请号：US11947725

申请日：2007-11-29

Applicant: Je-hun Lee ,  Dong-ju Yang ,  Tae-hyung Ihn ,  Do-hyun Kim ,  Sun-young Hong ,  Seung-jae Jung ,  Chang-oh Jeong ,  Eun-guk Lee

Inventor： Je-hun Lee ,  Dong-ju Yang ,  Tae-hyung Ihn ,  Do-hyun Kim ,  Sun-young Hong ,  Seung-jae Jung ,  Chang-oh Jeong ,  Eun-guk Lee

IPC: H01L21/00 ,  G02F1/136 ,  H01L29/16 ,  H01L31/00

CPC classification number: H01L29/7869

Abstract: Provided is a method of fabricating a semiconductive oxide thin-film transistor (TFT) substrate. The method includes forming gate wiring on an insulation substrate; and forming a structure in which a semiconductive oxide film pattern and data wiring are stacked on the gate wiring, wherein the semiconductive oxide film pattern is selectively patterned to have channel regions of first thickness and source/drain regions of greater second thickness and where image data is coupled to the source regions by data wiring formed on the source regions. According to a 4-mask embodiment, the data wiring and semiconductive oxide film pattern are defined by a shared etch mask.

Abstract translation: 提供一种制造半导体氧化物薄膜晶体管（TFT）衬底的方法。 该方法包括在绝缘基板上形成栅极布线; 并且形成其中半导体氧化物膜图案和数据布线堆叠在栅极布线上的结构，其中半导体氧化物膜图案被选择性地图案化以具有第二厚度的第一厚度的沟道区域和源极/漏极区域，并且其中图像数据 通过形成在源极区域上的数据布线耦合到源极区域。 根据4掩模实施例，数据布线和半导体氧化膜图案由共享蚀刻掩模限定。

公开(公告)号：US20100120209A1

公开(公告)日：2010-05-13

申请号：US12432437

申请日：2009-04-29

Applicant: Young-Joo CHOI ,  Bong-Kyun KIM ,  Byeong-Jin LEE ,  Jong-Hyun CHOUNG ,  Sun-Young HONG ,  Nam-Seok SUH ,  Hong-Sick PARK ,  Ky-Sub KIM ,  Seung-Yong LEE ,  Joon-Woo LEE ,  Young-Chul PARK ,  Young-Jun JIN ,  Seung-Jae YANG ,  Hyun-Kyu LEE ,  Sang-Hoon JANG ,  Min-Ki LIM

Inventor： Young-Joo CHOI ,  Bong-Kyun KIM ,  Byeong-Jin LEE ,  Jong-Hyun CHOUNG ,  Sun-Young HONG ,  Nam-Seok SUH ,  Hong-Sick PARK ,  Ky-Sub KIM ,  Seung-Yong LEE ,  Joon-Woo LEE ,  Young-Chul PARK ,  Young-Jun JIN ,  Seung-Jae YANG ,  Hyun-Kyu LEE ,  Sang-Hoon JANG ,  Min-Ki LIM

IPC: H01L21/336 ,  C09K13/06 ,  G03F7/20

CPC classification number: H01L21/32134 ,  C09K13/06 ,  C23F1/18 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

Abstract: An etchant composition is provided. The etchant composition includes about 40 to about 65 wt % of phosphoric acid, about 2 to about 5 wt % of nitric acid, about 2 to about 20 wt % of acetic acid, about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and a remaining weight percent of water for the total weight of the composition.

Abstract translation: 提供蚀刻剂组合物。 蚀刻剂组合物包括约40至约65重量％的磷酸，约2至约5重量％的硝酸，约2至约20重量％的乙酸，约0.1至约2重量％的含磷酸盐的化合物， 约0.1至约2重量％的同时含有氨基和羧基的化合物，以及组合物总重量的剩余重量百分数。