公开(公告)号：US08940104B2

公开(公告)日：2015-01-27

申请号：US13196679

申请日：2011-08-02

Applicant: Xing-Fu Zhong ,  John Moore

Inventor： Xing-Fu Zhong ,  John Moore

IPC: B08B3/04 ,  C11D1/22 ,  C11D3/20 ,  C11D3/43 ,  B08B3/02

CPC classification number: C11D3/2003 ,  B08B3/024 ,  B08B3/04 ,  B08B3/041 ,  C11D1/22 ,  C11D3/43 ,  C11D11/0047 ,  Y10T156/1116

Abstract: A cleaning composition for removing temporary wafer bonding material is provided. The cleaning composition comprises an alkylarylsulfonic acid and an aliphatic alcohol dispersed or dissolved in a hydrocarbon solvent system. Methods of separating bonded substrates and cleaning debonded substrates using the cleaning composition are also provided. The invention is particularly useful for temporary bonding materials and adhesives. The methods generally comprise contacting the bonding material with the cleaning solution for time periods sufficient to dissolve the desired amount of bonding material for separation and/or cleaning of the substrates.

Abstract translation: 提供一种用于去除临时晶片接合材料的清洁组合物。 清洁组合物包含分散或溶解在烃溶剂系统中的烷基芳基磺酸和脂族醇。 还提供了使用清洁组合物分离粘合的基材和清洁脱粘的基材的方法。 本发明对临时粘合材料和粘合剂特别有用。 所述方法通常包括使结合材料与清洁溶液接触足以溶解所需量的粘合材料以用于分离和/或清洁基底的时间。

公开(公告)号：US07695890B2

公开(公告)日：2010-04-13

申请号：US11470520

申请日：2006-09-06

Applicant: Xing-Fu Zhong ,  Jyoti K. Malhotra ,  Chenghong Li

Inventor： Xing-Fu Zhong ,  Jyoti K. Malhotra ,  Chenghong Li

IPC: G03F7/00 ,  G03F7/004

CPC classification number: G03F7/0382 ,  G03F7/0752 ,  H01L21/3081 ,  Y10S430/108 ,  Y10S430/115

Abstract: New photoresists for use during the production of semiconductor and MEMS devices are provided. The primer layer preferably comprises a silane dissolved or dispersed in a solvent system. The photoresist layer includes copolymers prepared from styrene, acrylonitrile, and epoxy-containing monomers. The photoresist layer comprises a photoacid generator, and is preferably negative-acting.

Abstract translation: 提供了在制造半导体和MEMS器件期间使用的新型光致抗蚀剂。 底漆层优选包含溶解或分散在溶剂体系中的硅烷。 光致抗蚀剂层包括由苯乙烯，丙烯腈和含环氧基的单体制备的共聚物。 光致抗蚀剂层包括光致酸发生剂，并且优选为负性作用。

公开(公告)号：US20090270300A1

公开(公告)日：2009-10-29

申请号：US12289206

申请日：2008-10-22

Applicant: Hiroyuki Uehara ,  Kazuhiro Aoba ,  Gu Xu ,  Xing-Fu Zhong

Inventor： Hiroyuki Uehara ,  Kazuhiro Aoba ,  Gu Xu ,  Xing-Fu Zhong

IPC: C11D7/32

CPC classification number: C11D11/0047 ,  C11D7/08 ,  C11D7/5004 ,  G03F7/423 ,  G03F7/425

Abstract: There is provided a composition that can effectively remove a protective coating and a primer coating that have a resistance to etching solutions and are rendered unnecessary after wet-etching treatment in MEMS fabrication processes, and a method for removing the protective layer. The composition contains (A) at least one organic solvent selected from the group consisting of amides, lactones, pyrrolidones and ketones, (B) water, and (C) a fluoride, in an amount of 80.00 to 99.90 mass %, 0.05 to 12.00 mass %, and 0.05 to 8.00 mass %, respectively. The composition may further contain (D) phosphoric acid, phosphonic acid or phosphinic acid in an amount over 0 mass part to 5.5 mass parts, or (E) an organic amine in an amount over 0 mass part to 45 mass parts, based on 100 mass parts of the composition.

Abstract translation: 提供了一种可以有效地去除在MEMS制造工艺中在湿蚀刻处理之后具有耐蚀刻溶液并且不需要的保护涂层和底漆涂层的组合物，以及用于去除保护层的方法。 组合物含有（A）至少一种选自酰胺，内酯，吡咯烷酮和酮的有机溶剂，（B）水和（C）氟化物，其含量为80.00-99.90质量％，0.05至12.00 质量％，0.05〜8.00质量％。 组合物还可以含有（D）0质量份〜5.5质量份的磷酸，膦酸或次膦酸，或（E）0质量份〜45质量份的有机胺，基于100 大部分组成。

公开(公告)号：US20080261145A1

公开(公告)日：2008-10-23

申请号：US11736429

申请日：2007-04-17

Applicant: Xing-Fu Zhong ,  Tony D. Flaim ,  Jyoti Malhotra

Inventor： Xing-Fu Zhong ,  Tony D. Flaim ,  Jyoti Malhotra

IPC: G03C1/043 ,  G03C5/00

CPC classification number: G03F7/0752 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0751 ,  Y10S430/108 ,  Y10S430/115

Abstract: New photoresists for use during the production of semiconductor and MEMS devices are provided. The primer layer preferably comprises a silane dissolved or dispersed in a solvent system. The photoresist layer includes a first polymer prepared from a styrene and an acrylonitrile, and a second polymer comprising epoxy-containing monomers (and preferably phenolic-containing monomers). The photoresist layer comprises a photoacid generator, and is preferably negative-acting.

Abstract translation: 提供了在制造半导体和MEMS器件期间使用的新型光致抗蚀剂。 底漆层优选包含溶解或分散在溶剂体系中的硅烷。 光致抗蚀剂层包括由苯乙烯和丙烯腈制备的第一聚合物，以及包含含环氧单体（优选含酚单体）的第二聚合物。 光致抗蚀剂层包括光致酸发生剂，并且优选为负性作用。

公开(公告)号：US06899992B2

公开(公告)日：2005-05-31

申请号：US10290623

申请日：2002-11-08

Applicant: Jianbing Huang ,  Shashikant Saraiya ,  Xing-Fu Zhong

Inventor： Jianbing Huang ,  Shashikant Saraiya ,  Xing-Fu Zhong

IPC: B41C1/10 ,  B41M5/36 ,  C07D239/46 ,  C07D487/04 ,  G03F7/027 ,  G03F7/035 ,  G03F7/038 ,  G03F7/004

CPC classification number: G03F7/0388 ,  B41C1/1008 ,  B41C1/1016 ,  B41C2201/02 ,  B41C2201/14 ,  B41C2210/04 ,  B41C2210/06 ,  B41C2210/22 ,  B41C2210/24 ,  C07D239/47 ,  C07D487/04 ,  G03F7/027 ,  G03F7/035

Abstract: QHB-Modified free radical polymerizable compounds and free radical polymerizable compositions that comprise these compounds are disclosed. A QBH-modified free radical polymerizable compound has at least one moiety that comprises at least one free radical polymerizable group; a supporting backbone, and at least one and preferably at least two moieties capable of forming four or more, typically four, hydrogen bonds with similar or complementary units on other molecules or portions of molecules. Free radical polymerizable compositions that contain these compounds may be used in any of the well-known applications for free radical polymerizable compositions. They are especially useful for the formation of imageable elements useful as lithographic printing plate precursors.

Abstract translation: 公开了QHB改性的可自由基聚合的化合物和包含这些化合物的自由基可聚合组合物。 QBH改性的自由基聚合性化合物具有至少一个包含至少一个可自由基聚合基团的部分; 支链骨架，以及能与其他分子或分子部分上的相似或互补单元形成四个或更多，通常四个氢键的至少一个，优选至少两个部分。 含有这些化合物的自由基可聚合组合物可用于任何用于自由基可聚合组合物的众所周知的应用。 它们对于形成可用作平版印刷版前体的可成像元件特别有用。

公开(公告)号：US06821583B2

公开(公告)日：2004-11-23

申请号：US10189169

申请日：2002-07-03

Applicant: Grant Thomas Donald Shouldice ,  Shashikant Saraiya ,  Xing-Fu Zhong ,  Richard R. Durand, Jr. ,  Jianbing Huang ,  Patrick Friedman

Inventor： Grant Thomas Donald Shouldice ,  Shashikant Saraiya ,  Xing-Fu Zhong ,  Richard R. Durand, Jr. ,  Jianbing Huang ,  Patrick Friedman

IPC: B32B2730

CPC classification number: B41M5/506 ,  B41C1/1016 ,  B41C2210/02 ,  B41C2210/04 ,  B41C2210/06 ,  B41C2210/14 ,  B41C2210/22 ,  B41C2210/24 ,  B41C2210/262 ,  B41M5/52 ,  B41M5/5227 ,  B41M2205/12 ,  B41M2205/38 ,  Y10T428/24802 ,  Y10T428/31699 ,  Y10T428/31855 ,  Y10T428/31928 ,  Y10T428/31935 ,  Y10T428/31938

Abstract: The present invention provides an imageable element, which includes: a substrate; a crosslinked layer disposed on the substrate; and an imageable ink-receptive layer disposed on the crosslinked layer, the imageable ink-receptive layer including an ablation free imageable composition. The present invention provides methods of producing the above imaged element.

Abstract translation: 本发明提供一种可成像元件，其包括：基板; 设置在所述基板上的交联层; 以及设置在所述交联层上的可成像的油墨接收层，所述可成像的墨接受层包括无消融成像的组合物。 本发明提供了制造上述成像元件的方法。

公开(公告)号：US06555283B1

公开(公告)日：2003-04-29

申请号：US09589334

申请日：2000-06-07

Applicant: Xing-Fu Zhong ,  Jianbing Huang ,  S. Peter Pappas

Inventor： Xing-Fu Zhong ,  Jianbing Huang ,  S. Peter Pappas

IPC: G03F7021

CPC classification number: B41C1/1016 ,  B41C2201/02 ,  B41C2201/14 ,  B41C2210/02 ,  B41C2210/04 ,  B41C2210/12 ,  B41C2210/14 ,  B41C2210/16 ,  B41C2210/22 ,  B41C2210/24 ,  B41M5/368 ,  G03F7/016 ,  G03F7/021 ,  G03F7/031 ,  G03F7/0752

Abstract: This invention relates to an imageable element that can be imaged and developed to produce a printing plate. The imageable element comprises a substrate and a radiation-sensitive imageable composition applied to the substrate. The imageable composition comprises (a) a first layer having (i) a photosensitive composition which undergoes a decrease in solubility in developer upon absorption of actinic radiation and (ii) an inhibitor, and (b) a second layer comprising an ink-repellent polymeric material. In one embodiment, the inhibitor is activated by heat or radiation of longer wavelength than actinic radiation. Upon activation, the inhibitor retards the solubility decrease of the photosensitive composition upon absorption of actinic radiation. In another embodiment, the inhibitor initially retards the solubility decrease of the photosensitive composition upon absorption of actinic radiation. However, the inhibitor is deactivated by heat or radiation of longer wavelength than actinic radiation, and upon deactivation the inhibitor no longer retards the solubility decrease of the photosensitive composition.

Abstract translation: 本发明涉及可成像和显影以产生印版的可成像元件。 可成像元件包括施加到基底的基底和辐射敏感可成像组合物。 可成像组合物包含（a）第一层，其具有（i）在吸收光化辐射时在显影剂中溶解度降低的光敏组合物和（ii）抑制剂，和（b）包含拒油聚合物 材料。 在一个实施方案中，抑制剂通过比光化辐射更长波长的热或辐射活化。 激活时，抑制剂在吸收光化辐射时阻碍光敏组合物的溶解度降低。 在另一个实施方案中，抑制剂最初延迟光敏组合物在吸收光化辐射时的溶解度降低。 然而，抑制剂通过比光化辐射更长波长的热或辐射而失活，并且在失活时，抑制剂不再延迟感光组合物的溶解度降低。

公开(公告)号：US09263314B2

公开(公告)日：2016-02-16

申请号：US13198294

申请日：2011-08-04

Applicant: Rama Puligadda ,  Xing-Fu Zhong ,  Tony D. Flaim ,  Jeremy McCutcheon

Inventor： Rama Puligadda ,  Xing-Fu Zhong ,  Tony D. Flaim ,  Jeremy McCutcheon

IPC: H01L21/00 ,  H01L21/683 ,  H01L21/20 ,  H01L23/00 ,  B32B38/00 ,  B32B38/10 ,  B32B43/00

CPC classification number: H01L21/6835 ,  B32B38/0008 ,  B32B38/10 ,  B32B43/006 ,  H01L21/2007 ,  H01L21/6836 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/351 ,  Y10T156/10 ,  Y10T156/11 ,  Y10T156/1126 ,  Y10T428/24942 ,  Y10T428/26 ,  Y10T428/31511 ,  Y10T428/31551 ,  Y10T428/31663 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31935 ,  Y10T428/31938 ,  H01L2924/00

Abstract: Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.

公开(公告)号：US20140162034A2

公开(公告)日：2014-06-12

申请号：US13198294

申请日：2011-08-04

Applicant: Rama Puligadda ,  Xing-Fu Zhong ,  Tony D. Flaim ,  Jeremy McCutcheon

Inventor： Rama Puligadda ,  Xing-Fu Zhong ,  Tony D. Flaim ,  Jeremy McCutcheon

IPC: B32B27/32 ,  B32B7/02 ,  B32B27/40 ,  B32B27/36 ,  B32B27/00 ,  H01L21/30 ,  B32B27/38

CPC classification number: H01L21/6835 ,  B32B38/0008 ,  B32B38/10 ,  B32B43/006 ,  H01L21/2007 ,  H01L21/6836 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/351 ,  Y10T156/10 ,  Y10T156/11 ,  Y10T156/1126 ,  Y10T428/24942 ,  Y10T428/26 ,  Y10T428/31511 ,  Y10T428/31551 ,  Y10T428/31663 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31935 ,  Y10T428/31938 ,  H01L2924/00

Abstract: Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.

公开(公告)号：US20120034437A1

公开(公告)日：2012-02-09

申请号：US13198294

申请日：2011-08-04

Applicant: Rama Puligadda ,  Xing-Fu Zhong ,  Tony D. Flaim ,  Jeremy McCutcheon

Inventor： Rama Puligadda ,  Xing-Fu Zhong ,  Tony D. Flaim ,  Jeremy McCutcheon

IPC: B32B27/32 ,  B32B7/02 ,  B32B27/40 ,  B32B27/36 ,  B32B27/00 ,  H01L21/30 ,  B32B27/38

CPC classification number: H01L21/6835 ,  B32B38/0008 ,  B32B38/10 ,  B32B43/006 ,  H01L21/2007 ,  H01L21/6836 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/351 ,  Y10T156/10 ,  Y10T156/11 ,  Y10T156/1126 ,  Y10T428/24942 ,  Y10T428/26 ,  Y10T428/31511 ,  Y10T428/31551 ,  Y10T428/31663 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31935 ,  Y10T428/31938 ,  H01L2924/00

Abstract: Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.

Abstract translation: 提供临时连接半导体衬底的多个结合层方案。 在本发明的接合方案中，至少一个层直接与半导体衬底接触，且该方案中的至少两个层彼此直接接触。 本发明提供了多个处理选择，因为多层结构内的不同层执行特定的功能。 更重要的是，它将通过提供更高的热稳定性，与苛刻的背面处理步骤的更大兼容性，通过封装保护晶片正面的凸块，在脱粘步骤中降低应力和减少剥离步骤来提高薄晶片处理解决方案的性能 正面的缺陷。