公开(公告)号：US07982205B2

公开(公告)日：2011-07-19

申请号：US11651994

申请日：2007-01-11

申请人： Xue-Lun Wang

发明人： Xue-Lun Wang

IPC分类号： H01L29/06

CPC分类号： H01L33/24 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/30

摘要： A III-V group compound semiconductor light-emitting diode, containing a substrate 1 having plural crystal planes, and a grown layer formed on the substrate by epitaxial growth, the grown layer at least including a barrier layer 2 and 3 and an active layer 8, wherein at least the active layer of the grown layer has plural crystal planes each having a different bandgap energy in the in-plane direction, and an Ohmic electrode 4 for current injection is formed on a crystal plane (3) having a higher bandgap energy among the plural crystal planes.

摘要翻译： 包含具有多个晶面的基板1的III-V族化合物半导体发光二极管和通过外延生长在基板上形成的生长层，生长层至少包括阻挡层2和3以及活性层8 其中，所述生长层的至少活性层具有在面内方向上具有不同带隙能的多个晶面，并且在具有较高带隙能量的晶面（3）上形成用于电流注入的欧姆电极4 在多个水晶面中。

公开(公告)号：US6036773A

公开(公告)日：2000-03-14

申请号：US826422

申请日：1997-03-27

申请人： Xue-Lun Wang ,  Mutsuo Ogura

发明人： Xue-Lun Wang ,  Mutsuo Ogura

IPC分类号： B82B3/00 ,  C30B25/02 ,  C30B25/18 ,  H01L21/20 ,  H01L21/205 ,  C30B23/04

CPC分类号： C30B25/02 ,  B82Y10/00 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  Y10S117/913 ,  Y10S977/773 ,  Y10S977/813

摘要： A Group III atomic layer required for fabrication of a semiconductor quantum nanostructure is grown to be properly restricted to a monolayer.A substrate is configured to have a fast-growth surface portion where growth of a Ga atomic layer proceeds at a relatively high rate and a slow-growth surface portion where the growth of the Ga atomic layer proceeds at a relatively low rate. Ga atoms are supplied to the fast-growth surface portion in an amount not less than that which grows one layer of the Group III atoms. Excess Ga atoms on the fast-growth surface portion are allowed to migrate to the slow-growth surface portion by surface migration, thereby growing only one layer of the Ga atoms on the fast-growth surface portion.

摘要翻译： 生长半导体量子纳米结构所需的III族原子层被适当地限制为单层。 衬底被配置为具有以较高速率进行Ga原子层的生长的快速生长表面部分和Ga原子层的生长以较低速率进行的缓慢生长表面部分。 将Ga原子以不小于生长一层III族原子的量供给到快速生长表面部分。 允许快速生长表面部分上的过量Ga原子通过表面迁移迁移到慢生长表面部分，从而在快速生长表面部分上仅生长一层Ga原子。

公开(公告)号：US20070200135A1

公开(公告)日：2007-08-30

申请号：US11651994

申请日：2007-01-11

申请人： Xue-Lun Wang

发明人： Xue-Lun Wang

IPC分类号： H01L33/00

CPC分类号： H01L33/24 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/30

摘要： A III-V group compound semiconductor light-emitting diode, containing a substrate 1 having plural crystal planes, and a grown layer formed on the substrate by epitaxial growth, the grown layer at least including a barrier layer 2 and 3 and an active layer 8, wherein at least the active layer of the grown layer has plural crystal planes each having a different bandgap energy in the in-plane direction, and an Ohmic electrode 4 for current injection is formed on a crystal plane (3) having a higher bandgap energy among the plural crystal planes.

摘要翻译： 包含具有多个晶面的基板1的III-V族化合物半导体发光二极管和通过外延生长在基板上形成的生长层，生长层至少包括阻挡层2和3以及活性层8 其中，所述生长层的至少活性层具有在面内方向上具有不同带隙能的多个晶面，并且在具有较高带隙能量的晶面（3）上形成用于电流注入的欧姆电极4 在多个水晶面中。