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    Phase-change memory and fabrication method thereof
    2.
    发明授权
    Phase-change memory and fabrication method thereof 有权
    相变存储器及其制造方法

    公开(公告)号：US07569845B2

    公开(公告)日：2009-08-04

    申请号：US11552492

    申请日：2006-10-24

    申请人： Yi-Chan Chen ,  Wen-Han Wang

    发明人： Yi-Chan Chen ,  Wen-Han Wang

    IPC分类号： H01L47/00

    CPC分类号： H01L45/124 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1691

    摘要： A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first phase-change material is formed in the first isolation layer, wherein the top electrode and the bottom electrode are electrically connected via the first phase-change material. Since the phase-change material can have a diameter less than the resolution limit of the photolithography process, an operating current for a state conversion of the phase-change material pattern may be reduced so as to decrease a power dissipation of the phase-change memory device.

    摘要翻译： 相变存储器包括形成在基板上的底部电极。 在底部电极上形成第一隔离层。 顶部电极形成在隔离层上。 第一相变材料形成在第一隔离层中，其中顶部电极和底部电极经由第一相变材料电连接。 由于相变材料的直径可以小于光刻工艺的分辨率极限，所以可以减小相变材料图案的状态转换的工作电流，从而降低相变存储器的功耗 设备。

    PHASE CHANGE MEMORY DEVICES AND FABRICATION METHODS THEREOF
    3.
    发明申请
    PHASE CHANGE MEMORY DEVICES AND FABRICATION METHODS THEREOF 审中-公开
    相变存储器件及其制造方法

    公开(公告)号：US20080237562A1

    公开(公告)日：2008-10-02

    申请号：US11955293

    申请日：2007-12-12

    申请人： Yi-Chan Chen ,  Chih-Wei Chen ,  Hong-Hui Hsu ,  Chien-Min Lee

    发明人： Yi-Chan Chen ,  Chih-Wei Chen ,  Hong-Hui Hsu ,  Chien-Min Lee

    IPC分类号： H01L45/00

    CPC分类号： H01L45/16 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

    摘要： Phase change memory devices and fabrication methods thereof. A phase change memory device comprises a stacked heating element with a conductive portion and a relatively high resistive portion, wherein the relatively high resistive portion includes a nitrogen-containing metal silicide part. The heating stacked element such as a highly resistive nitrogen-containing metal silicide (MSixNy) is formed by a self-aligned silicidizing and nitrifying process. Self-aligned silicidization can be achieved by nitrogen ion implantation or nitrogen-containing plasma treatment. The resistance of the heating element can be regulated by adjusting the content of nitrogen or degree of nitrification.

    摘要翻译： 相变存储器件及其制造方法。 相变存储器件包括具有导电部分和相对较高电阻部分的堆叠加热元件，其中相对较高的电阻部分包括含氮金属硅化物部分。 通过自对准的硅化和硝化工艺形成诸如高阻值含氮金属硅化物（MSi x N N y）的加热层叠元件。 自对准硅化可以通过氮离子注入或含氮等离子体处理来实现。 可以通过调节氮的含量或硝化程度来调节加热元件的电阻。

    Class AB operational buffer
    4.
    发明授权
    Class AB operational buffer 有权
    AB类操作缓冲区

    公开(公告)号：US07358812B2

    公开(公告)日：2008-04-15

    申请号：US11318876

    申请日：2005-12-28

    申请人： Lionel Portmann ,  Yi-Chan Chen

    发明人： Lionel Portmann ,  Yi-Chan Chen

    IPC分类号： H03F3/45

    CPC分类号： H03F3/45192

    摘要： A class AB operational buffer comprises an output stage, a voltage supply circuit to provide a first voltage and a second voltage to drive the output stage, a first current source to provide a first current, a second current source to provide a second current, a first current mirror having a first reference branch coupled with the first current and a first mirror branch coupled with the second current through the voltage supply circuit, and a second current mirror having a second reference branch coupled between the second current source and first mirror branch and a second mirror branch coupled between the first current source and first reference branch.

    摘要翻译： AB类运算缓冲器包括输出级，提供第一电压和第二电压以驱动输出级的电压供应电路，提供第一电流的第一电流源，提供第二电流的第二电流源， 第一电流镜，具有与第一电流耦合的第一参考支路和与第二电流耦合的第一反射镜分支通过电压供应电路;以及第二电流镜，具有耦合在第二电流源和第一镜分支之间的第二参考支路， 耦合在第一电流源和第一参考分支之间的第二镜分支。

    Phase change memory device and fabricating method therefor
    5.
    发明申请
    Phase change memory device and fabricating method therefor 失效
    相变存储器件及其制造方法

    公开(公告)号：US20070148855A1

    公开(公告)日：2007-06-28

    申请号：US11479497

    申请日：2006-06-30

    申请人： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

    发明人： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

    IPC分类号： H01L21/8244 ,  H01L21/8238 ,  H01L21/00 ,  H01L21/20

    CPC分类号： H01L45/06 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

    摘要： A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

    摘要翻译： 提供了一种相变存储器件及其制造方法。 盘状相变层被埋在绝缘材料内。 通过光刻形成中心通孔和环形通孔。 中心通孔位于相变层的中心，通过相变层，环形通孔以中心通孔为中心。 中心通孔内的加热电极进行相变层的焦耳加热，通过控制相变层的厚度来降低相变层与加热电极之间的接触面积。 此外，环通孔内的第二电极耗散了传递到相变层之间的接触界面的热量，以避免将热量传递到相变层周围的蚀刻边界。

    Phase change memory device and method for fabricating the same
    7.
    发明授权
    Phase change memory device and method for fabricating the same 有权
    相变存储器件及其制造方法

    公开(公告)号：US07989795B2

    公开(公告)日：2011-08-02

    申请号：US11857396

    申请日：2007-09-18

    申请人： Wei-Su Chen ,  Yi-Chan Chen ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Der-Sheng Chao ,  Chih Wei Chen ,  Ming-Jinn Tsai

    发明人： Wei-Su Chen ,  Yi-Chan Chen ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Der-Sheng Chao ,  Chih Wei Chen ,  Ming-Jinn Tsai

    IPC分类号： H01L29/04

    CPC分类号： H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/124 ,  H01L45/126 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1691

    摘要： A phase change memory device is provided. The phase change memory device comprises a substrate. An electrode layer is on the substrate. A phase change memory structure is on the electrode layer and electrically connected to the electrode layer, wherein the phase change memory structure comprises a cup-shaped heating electrode on the electrode layer. An insulating layer is on the cup-shaped heating electrode along a first direction covering a portion of the cup-shaped heating electrode. An electrode structure is on the cup-shaped heating electrode along a second direction covering a portion of the insulating layer and the cup-shaped heating electrode. A pair of double spacers is on a pair of sidewalls of the electrode structure covering a portion of the cup-shaped heating electrode, wherein the double spacer comprises a phase change material spacer and an insulating material spacer on a sidewall of the phase change material spacer.

    摘要翻译： 提供了相变存储器件。 相变存储器件包括衬底。 电极层位于基板上。 相变存储器结构在电极层上并电连接到电极层，其中相变存储器结构包括在电极层上的杯形加热电极。 绝缘层沿着覆盖杯状加热电极的一部分的第一方向位于杯状加热电极上。 电极结构沿着覆盖绝缘层和杯状加热电极的一部分的第二方向位于杯状加热电极上。 一对双间隔物位于电极结构的一对侧壁上，覆盖杯状加热电极的一部分，其中双间隔物包括相变材料间隔物和在相变材料间隔物的侧壁上的绝缘材料间隔物 。

    Phase change memory device and fabricating method therefor
    8.
    发明授权
    Phase change memory device and fabricating method therefor 有权
    相变存储器件及其制造方法

    公开(公告)号：US07868314B2

    公开(公告)日：2011-01-11

    申请号：US12547744

    申请日：2009-08-26

    申请人： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

    发明人： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

    IPC分类号： H01L47/00

    CPC分类号： H01L45/06 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

    摘要： A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

    摘要翻译： 提供了一种相变存储器件及其制造方法。 盘状相变层被埋在绝缘材料内。 通过光刻形成中心通孔和环形通孔。 中心通孔位于相变层的中心，通过相变层，环形通孔以中心通孔为中心。 中心通孔内的加热电极进行相变层的焦耳加热，通过控制相变层的厚度来降低相变层与加热电极之间的接触面积。 此外，环通孔内的第二电极耗散了传递到相变层之间的接触界面的热量，以避免将热量传递到相变层周围的蚀刻边界。

    PHASE CHANGE MEMORY DEVICE AND FABRICATING METHOD THEREFOR
    9.
    发明申请
    PHASE CHANGE MEMORY DEVICE AND FABRICATING METHOD THEREFOR 有权
    相变记忆装置及其制作方法

    公开(公告)号：US20100140583A1

    公开(公告)日：2010-06-10

    申请号：US12547744

    申请日：2009-08-26

    申请人： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

    发明人： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

    IPC分类号： H01L45/00

    CPC分类号： H01L45/06 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

    摘要： A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

    摘要翻译： 提供了一种相变存储器件及其制造方法。 盘状相变层被埋在绝缘材料内。 通过光刻形成中心通孔和环形通孔。 中心通孔位于相变层的中心，通过相变层，环形通孔以中心通孔为中心。 中心通孔内的加热电极进行相变层的焦耳加热，通过控制相变层的厚度来降低相变层与加热电极之间的接触面积。 此外，环通孔内的第二电极耗散了传递到相变层之间的接触界面的热量，以避免将热量传递到相变层周围的蚀刻边界。

    Phase change memory device and fabricating method therefor
    10.
    发明授权
    Phase change memory device and fabricating method therefor 失效
    相变存储器件及其制造方法

    公开(公告)号：US07598113B2

    公开(公告)日：2009-10-06

    申请号：US11479497

    申请日：2006-06-30

    申请人： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

    发明人： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

    IPC分类号： H01L21/00 ,  H01L45/00

    CPC分类号： H01L45/06 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

    摘要： A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

    摘要翻译： 提供了一种相变存储器件及其制造方法。 盘状相变层被埋在绝缘材料内。 通过光刻形成中心通孔和环形通孔。 中心通孔位于相变层的中心，通过相变层，环形通孔以中心通孔为中心。 中心通孔内的加热电极进行相变层的焦耳加热，通过控制相变层的厚度来降低相变层与加热电极之间的接触面积。 此外，环通孔内的第二电极耗散了传递到相变层之间的接触界面的热量，以避免将热量传递到相变层周围的蚀刻边界。