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    Lateral flow atomic layer deposition device
    1.
    发明授权
    Lateral flow atomic layer deposition device 有权
    侧流原子层沉积装置

    公开(公告)号：US09145609B2

    公开(公告)日：2015-09-29

    申请号：US13439178

    申请日：2012-04-04

    申请人： Young-Seok Choi ,  Dae-Youn Kim ,  Seung Woo Choi ,  Yong Min Yoo ,  Jung Soo Kim

    发明人： Young-Seok Choi ,  Dae-Youn Kim ,  Seung Woo Choi ,  Yong Min Yoo ,  Jung Soo Kim

    IPC分类号： C23C16/455

    CPC分类号： C23C16/45591 ,  C23C16/45502 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45587

    摘要： A lateral flow atomic layer deposition device according to an exemplary embodiment of the present invention eliminates a gas flow control plate in a conventional lateral flow atomic layer deposition device and controls shapes of a gas input part and a gas output part in a reactor cover to make a gas flow path to a center of a substrate shorter than a gas flow path to an edge of the substrate and thereby increase the amount of gas per unit area flowing to the center of the substrate. Therefore, film thickness in the center of the substrate in the lateral flow reactor increases.

    摘要翻译： 根据本发明的示例性实施例的侧流原子层沉积装置消除了常规横流原子层沉积装置中的气流控制板，并控制反应器盖中的气体输入部分和气体输出部分的形状，以使 通向基板中心的气体流动通道，该气体流动通道短于通向基板边缘的气体流动路径，从而增加每单位面积流到基板中心的气体量。 因此，侧流反应器中的基板中心的膜厚度增加。

    Method of forming metal oxide
    4.
    发明授权
    Method of forming metal oxide 有权
    形成金属氧化物的方法

    公开(公告)号：US07708969B2

    公开(公告)日：2010-05-04

    申请号：US11775111

    申请日：2007-07-09

    申请人： Seok-Jun Won ,  Yong-Min Yoo ,  Min-Woo Song ,  Dae-Youn Kim ,  Young-Hoon Kim ,  Weon-Hong Kim ,  Jung-Min Park ,  Sun-Mi Song

    发明人： Seok-Jun Won ,  Yong-Min Yoo ,  Min-Woo Song ,  Dae-Youn Kim ,  Young-Hoon Kim ,  Weon-Hong Kim ,  Jung-Min Park ,  Sun-Mi Song

    IPC分类号： C01F17/00 ,  C25D17/00

    CPC分类号： C01G25/02 ,  C01G23/047 ,  C01G27/02 ,  C01G35/00 ,  C01P2006/40

    摘要： In a method and an apparatus for forming metal oxide on a substrate, a source gas including metal precursor flows along a surface of the substrate to form a metal precursor layer on the substrate. An oxidizing gas including ozone flows along a surface of the metal precursor layer to oxidize the metal precursor layer so that the metal oxide is formed on the substrate. A radio frequency power is applied to the oxidizing gas flowing along the surface of the metal precursor layer to accelerate a reaction between the metal precursor layer and the oxidizing gas. Acceleration of the oxidation reaction may improve electrical characteristics and uniformity of the metal oxide.

    摘要翻译： 在基板上形成金属氧化物的方法和装置中，包括金属前体的源气体沿着基板的表面流动，以在基板上形成金属前体层。 包括臭氧的氧化气体沿着金属前体层的表面流动，以氧化金属前体层，从而在基板上形成金属氧化物。 对沿着金属前体层的表面流动的氧化气体施加射频功率，以加速金属前体层与氧化气体的反应。 氧化反应的加速可以改善金属氧化物的电特性和均匀性。

    Methods of forming an amorphous silicon thin film
    5.
    发明授权
    Methods of forming an amorphous silicon thin film 有权
    形成非晶硅薄膜的方法

    公开(公告)号：US08076242B2

    公开(公告)日：2011-12-13

    申请号：US12433629

    申请日：2009-04-30

    申请人： Jong Su Kim ,  Hyung Sang Park ,  Yong Min Yoo ,  Hak Yong Kwon ,  Tae Ho Yoon

    发明人： Jong Su Kim ,  Hyung Sang Park ,  Yong Min Yoo ,  Hak Yong Kwon ,  Tae Ho Yoon

    IPC分类号： H01L21/44

    CPC分类号： H01L21/02592 ,  H01L21/02532 ,  H01L21/0262

    摘要： A method for forming an amorphous silicon thin film is disclosed. In some embodiments, a method includes loading a substrate into a reaction chamber; and conducting a plurality of deposition cycles on the substrate. Each of at least two of the cycles includes: supplying a silicon precursor to the reaction chamber during a first time period; applying radio frequency power to the reaction chamber at least partly during the first time period; stopping supplying of the silicon precursor and applying of the radio frequency power during a second time period between the first time period and an immediately subsequent deposition cycle; and supplying hydrogen plasma to the reaction chamber during a third time period between the second time period and the immediately subsequent deposition cycle. The method allows formation of an amorphous silicon film having an excellent step-coverage and a low roughness at a relatively low deposition temperature.

    摘要翻译： 公开了一种形成非晶硅薄膜的方法。 在一些实施例中，一种方法包括将基底装载到反应室中; 以及在所述衬底上进行多个沉积循环。 至少两个循环中的每一个包括：在第一时间段内将硅前体供应到反应室; 至少部分地在第一时间段内向反应室施加射频功率; 在第一时间段和紧随其后的沉积循环之间的第二时间段期间，停止供应硅前体和施加射频功率; 以及在第二时间段和紧随其后的沉积循环之间的第三时间段期间向反应室供应氢等离子体。 该方法允许在相对低的沉积温度下形成具有优异的阶梯覆盖和低粗糙度的非晶硅膜。

    LATERAL FLOW ATOMIC LAYER DEPOSITION DEVICE
    7.
    发明申请
    LATERAL FLOW ATOMIC LAYER DEPOSITION DEVICE 有权
    横向流动原子层沉积装置

    公开(公告)号：US20120272900A1

    公开(公告)日：2012-11-01

    申请号：US13439178

    申请日：2012-04-04

    申请人： Young-Seok CHOI ,  Dae-Youn KIM ,  Seung Woo CHOI ,  Yong Min YOO ,  Jung Soo KIM

    发明人： Young-Seok CHOI ,  Dae-Youn KIM ,  Seung Woo CHOI ,  Yong Min YOO ,  Jung Soo KIM

    IPC分类号： C23C16/455

    CPC分类号： C23C16/45591 ,  C23C16/45502 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45587

    摘要： A lateral flow atomic layer deposition device according to an exemplary embodiment of the present invention eliminates a gas flow control plate in a conventional lateral flow atomic layer deposition device and controls shapes of a gas input part and a gas output part in a reactor cover to make a gas flow path to a center of a substrate shorter than a gas flow path to an edge of the substrate and thereby increase the amount of gas per unit area flowing to the center of the substrate. Therefore, film thickness in the center of the substrate in the lateral flow reactor increases.

    摘要翻译： 根据本发明的示例性实施例的侧流原子层沉积装置消除了常规横流原子层沉积装置中的气流控制板，并控制反应器盖中的气体输入部分和气体输出部分的形状，以使 通向基板中心的气体流动通道，该气体流动通道短于通向基板边缘的气体流动路径，从而增加每单位面积流到基板中心的气体量。 因此，侧流反应器中的基板中心的膜厚度增加。

    Method of Forming Metal Oxide and Apparatus for Performing the Same
    8.
    发明申请
    Method of Forming Metal Oxide and Apparatus for Performing the Same 审中-公开
    形成金属氧化物的方法及其执行装置

    公开(公告)号：US20100170441A1

    公开(公告)日：2010-07-08

    申请号：US12729973

    申请日：2010-03-23

    申请人： Seok-Jun Won ,  Yong-Min Yoo ,  Min-Woo Song ,  Dae-Youn Kim ,  Young-Hoon Kim ,  Weon-Hong Kim ,  Jung-Min Park ,  Sun-Mi Song

    发明人： Seok-Jun Won ,  Yong-Min Yoo ,  Min-Woo Song ,  Dae-Youn Kim ,  Young-Hoon Kim ,  Weon-Hong Kim ,  Jung-Min Park ,  Sun-Mi Song

    IPC分类号： H01L21/46

    CPC分类号： C01G25/02 ,  C01G23/047 ,  C01G27/02 ,  C01G35/00 ,  C01P2006/40

    摘要： In a method and an apparatus for forming metal oxide on a substrate, a source gas including metal precursor flows along a surface of the substrate to form a metal precursor layer on the substrate. An oxidizing gas including ozone flows along a surface of the metal precursor layer to oxidize the metal precursor layer so that the metal oxide is formed on the substrate. A radio frequency power is applied to the oxidizing gas flowing along the surface of the metal precursor layer to accelerate a reaction between the metal precursor layer and the oxidizing gas. Acceleration of the oxidation reaction may improve electrical characteristics and uniformity of the metal oxide.

    摘要翻译： 在基板上形成金属氧化物的方法和装置中，包括金属前体的源气体沿着基板的表面流动，以在基板上形成金属前体层。 包括臭氧的氧化气体沿着金属前体层的表面流动，以氧化金属前体层，从而在基板上形成金属氧化物。 对沿着金属前体层的表面流动的氧化气体施加射频功率，以加速金属前体层与氧化气体的反应。 氧化反应的加速可以改善金属氧化物的电特性和均匀性。

    METHODS OF FORMING AN AMORPHOUS SILICON THIN FILM
    9.
    发明申请
    METHODS OF FORMING AN AMORPHOUS SILICON THIN FILM 有权
    形成非晶硅薄膜的方法

    公开(公告)号：US20090278224A1

    公开(公告)日：2009-11-12

    申请号：US12433629

    申请日：2009-04-30

    申请人： Jong Su Kim ,  Hyung Sang Park ,  Yong Min Yoo ,  Hak Yong Kwon ,  Tae Ho Yoon

    发明人： Jong Su Kim ,  Hyung Sang Park ,  Yong Min Yoo ,  Hak Yong Kwon ,  Tae Ho Yoon

    IPC分类号： H01L29/06 ,  H01L21/314 ,  H01L21/316

    CPC分类号： H01L21/02592 ,  H01L21/02532 ,  H01L21/0262

    摘要： A method for forming an amorphous silicon thin film is disclosed. In some embodiments, a method includes loading a substrate into a reaction chamber; and conducting a plurality of deposition cycles on the substrate. Each of at least two of the cycles includes: supplying a silicon precursor to the reaction chamber during a first time period; applying radio frequency power to the reaction chamber at least partly during the first time period; stopping supplying of the silicon precursor and applying of the radio frequency power during a second time period between the first time period and an immediately subsequent deposition cycle; and supplying hydrogen plasma to the reaction chamber during a third time period between the second time period and the immediately subsequent deposition cycle. The method allows formation of an amorphous silicon film having an excellent step-coverage and a low roughness at a relatively low deposition temperature.

    摘要翻译： 公开了一种形成非晶硅薄膜的方法。 在一些实施例中，一种方法包括将基底装载到反应室中; 以及在所述衬底上进行多个沉积循环。 至少两个循环中的每一个包括：在第一时间段内将硅前体供应到反应室; 至少部分地在第一时间段内向反应室施加射频功率; 在第一时间段和紧随其后的沉积循环之间的第二时间段期间，停止供应硅前体和施加射频功率; 以及在第二时间段和紧随其后的沉积循环之间的第三时间段期间向反应室供应氢等离子体。 该方法允许在相对低的沉积温度下形成具有优异的阶梯覆盖和低粗糙度的非晶硅膜。

    METHOD OF DEPOSITING SILICON OXIDE FILMS
    10.
    发明申请
    METHOD OF DEPOSITING SILICON OXIDE FILMS 审中-公开
    沉积氧化硅膜的方法

    公开(公告)号：US20090041952A1

    公开(公告)日：2009-02-12

    申请号：US12178300

    申请日：2008-07-23

    申请人： Tae Ho Yoon ,  Hyung Sang Park ,  Yong Min Yoo

    发明人： Tae Ho Yoon ,  Hyung Sang Park ,  Yong Min Yoo

    IPC分类号： H05H1/24

    CPC分类号： C23C16/402 ,  C23C16/45542

    摘要： Methods of depositing a silicon oxide film are disclosed. One embodiment is a plasma enhanced atomic layer deposition (PEALD) process that includes supplying a vapor phase silicon precursor, such as a diaminosilane compound, to a substrate, and supplying oxygen plasma to the substrate. Another embodiment is a pulsed hybrid method between atomic layer deposition (ALD) and chemical vapor deposition (CVD). In the other embodiment, a vapor phase silicon precursor, such as a diaminosilane compound, is supplied to a substrate while ozone gas is continuously or discontinuously supplied to the substrate.

    摘要翻译： 公开了沉积氧化硅膜的方法。 一个实施例是等离子体增强原子层沉积（PEALD）工艺，其包括将诸如二氨基硅烷化合物的气相硅前体供应到基底，并将氧等离子体供应到基底。 另一个实施例是在原子层沉积（ALD）和化学气相沉积（CVD）之间的脉冲混合方法。 在另一个实施方案中，将诸如二氨基硅烷化合物的气相硅前体供给到基板，同时将臭氧气体连续地或不连续地供应到基板。