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    PLASMA PROCESSING METHOD FOR SUBSTRATES
    1.
    发明申请
    PLASMA PROCESSING METHOD FOR SUBSTRATES 有权
    基板等离子体处理方法

    公开(公告)号：US20130168353A1

    公开(公告)日：2013-07-04

    申请号：US13823955

    申请日：2011-09-29

    申请人： Shogo Okita ,  Ryota Furukawa ,  Yoshimasa Inamoto ,  Tatsuhiro Mizukami

    发明人： Shogo Okita ,  Ryota Furukawa ,  Yoshimasa Inamoto ,  Tatsuhiro Mizukami

    IPC分类号： B44C1/22

    CPC分类号： B44C1/227 ,  H01L21/67069 ,  H01L21/68742 ,  H01L21/68771 ,  H01L33/005

    摘要： A process for, with use of a tray in which substrate receiving holes are provided and which has substrate support portions protruding from inner walls of the substrate receiving holes, placing the tray onto a tray support portion of a substrate stage and placing substrates onto the substrate holding portions, so that edge portions of the substrates projected out of end edges of the substrate holding portions and the substrate support portions are separated; a process for reducing pressure in a chamber and supplying a process gas thereto to fulfill plasma processing for the substrates; and a process for, with the tray and the substrates placed on the substrate stage, reducing the pressure in the chamber and supplying a process gas to fulfill plasma processing so that by-products stuck to edge portions of the substrates and the substrate support portions are removed.

    摘要翻译： 一种使用托盘的方法，其中设置有基板接收孔，并且具有从基板接收孔的内壁突出的基板支撑部分，将托盘放置在基板台的托盘支撑部分上并将基板放置在基板上 保持部分，使得从基板保持部分和基板支撑部分的端部边缘突出的基板的边缘部分被分离; 用于减小腔室中的压力并向其提供处理气体以实现基底的等离子体处理的方法; 以及用于将托盘和基板放置在基板台上的方法，减小了室中的压力并提供处理气体以实现等离子体处理，使得粘附到基板和基板支撑部分的边缘部分的副产物是 删除。

    Plasma processing method for substrates
    3.
    发明授权
    Plasma processing method for substrates 有权
    基板等离子体处理方法

    公开(公告)号：US09073385B2

    公开(公告)日：2015-07-07

    申请号：US13823955

    申请日：2011-09-29

    申请人： Shogo Okita ,  Ryota Furukawa ,  Yoshimasa Inamoto ,  Tatsuhiro Mizukami

    发明人： Shogo Okita ,  Ryota Furukawa ,  Yoshimasa Inamoto ,  Tatsuhiro Mizukami

    IPC分类号： H01L21/67 ,  B44C1/22 ,  H01L21/687 ,  H01L33/00

    CPC分类号： B44C1/227 ,  H01L21/67069 ,  H01L21/68742 ,  H01L21/68771 ,  H01L33/005

    摘要： A substrate placement process uses a tray in which a plurality of substrate receiving holes are provided to receive substrates and which has substrate support portions protruding from inner walls of the substrate receiving holes. The tray is placed onto a tray support portion of a substrate stage and places substrates onto substrate holding portions, respectively, so that edge portions of the substrates projected beyond end edges of the substrate holding portions and are apart from the substrate support portions. The first plasma processing process reduces internal pressure of a chamber and supplies a process gas thereto to fulfill plasma processing for the individual substrates. A second plasma processing process with the tray and the individual substrates placed on the substrate stage, reduces the internal pressure of the chamber and supplies a process gas to fulfill plasma processing so that by-products stuck to edge portions of the substrates and the substrate support portions due to the first plasma processing process are removed. By the removal of by-products stuck to the edge portions of the substrates and the tray during plasma processing, product quality is improved.

    摘要翻译： 衬底放置过程使用其中设置有多个衬底接收孔的托盘来接收衬底，并且具有从衬底接收孔的内壁突出的衬底支撑部分。 托盘被放置在基板台的托盘支撑部分上，并且将基板分别放置在基板保持部分上，使得基板的边缘部分突出超过基板保持部分的端部边缘并且离开基板支撑部分。 第一等离子体处理工艺降低了室的内部压力，并向其提供工艺气体以实现各个衬底的等离子体处理。 第二等离子体处理工艺，其中托盘和单独的基板放置在基板台上，降低了室的内部压力，并提供了处理气体以实现等离子体处理，使得副产物粘附到基板的边缘部分和基板支撑 去除由于第一等离子体处理过程引起的部分。 通过在等离子体处理期间去除粘附到基板和托盘的边缘部分的副产物，提高了产品质量。

    Dry etching method
    4.
    发明授权
    Dry etching method 失效
    干蚀刻法

    公开(公告)号：US5318668A

    公开(公告)日：1994-06-07

    申请号：US963637

    申请日：1992-10-20

    申请人： Tokuhiko Tamaki ,  Shinichi Imai ,  Tadashi Kimura ,  Yoshimasa Inamoto

    发明人： Tokuhiko Tamaki ,  Shinichi Imai ,  Tadashi Kimura ,  Yoshimasa Inamoto

    IPC分类号： H01L21/311 ,  H01L21/00

    CPC分类号： H01L21/31116

    摘要： The invention provides an improved dry etching method for selectively etching a silicon nitride layer 3 formed on the surface of a SiO.sub.2 layer 2 formed on a p-type semiconductor substrate, the method comprising the steps of supplying a mixed gas of HBr and ClF.sub.3 to a reaction chamber wherein SiBr.sub.4, caused, during the dry etching, by a reaction of the silicon nitride layer 3 and the HBr contained in the mixed gas, partly deposits on an etching wall of the p-type semiconductor substrate 1 while at the same time an excess of the SiBr.sub.4 reacts, between the p-type semiconductor substrate 1 and a wall of the reaction chamber, with the ClF.sub.3 contained in the mixed gas to produce a fluoride. The fluoride thus produced can be easily discharged to the outside, since it is more volatile.

    摘要翻译： 本发明提供了一种改进的干蚀刻方法，用于选择性地蚀刻形成在p型半导体衬底上形成的SiO 2层2的表面上的氮化硅层3，该方法包括以下步骤：将HBr和ClF 3的混合气体供应到 反应室，其中SiBr 4在干蚀刻期间，通过氮化硅层3和混合气体中所含的HBr的反应而部分沉积在p型半导体衬底1的蚀刻壁上，同时， 过量的SiBr 4在p型半导体衬底1和反应室的壁之间与混合气体中包含的ClF 3反应以产生氟化物。 由此产生的氟化物更容易排出到外部，因为它更易挥发。