摘要:
A process for, with use of a tray in which substrate receiving holes are provided and which has substrate support portions protruding from inner walls of the substrate receiving holes, placing the tray onto a tray support portion of a substrate stage and placing substrates onto the substrate holding portions, so that edge portions of the substrates projected out of end edges of the substrate holding portions and the substrate support portions are separated; a process for reducing pressure in a chamber and supplying a process gas thereto to fulfill plasma processing for the substrates; and a process for, with the tray and the substrates placed on the substrate stage, reducing the pressure in the chamber and supplying a process gas to fulfill plasma processing so that by-products stuck to edge portions of the substrates and the substrate support portions are removed.
摘要:
A substrate placement process uses a tray in which a plurality of substrate receiving holes are provided to receive substrates and which has substrate support portions protruding from inner walls of the substrate receiving holes. The tray is placed onto a tray support portion of a substrate stage and places substrates onto substrate holding portions, respectively, so that edge portions of the substrates projected beyond end edges of the substrate holding portions and are apart from the substrate support portions. The first plasma processing process reduces internal pressure of a chamber and supplies a process gas thereto to fulfill plasma processing for the individual substrates. A second plasma processing process with the tray and the individual substrates placed on the substrate stage, reduces the internal pressure of the chamber and supplies a process gas to fulfill plasma processing so that by-products stuck to edge portions of the substrates and the substrate support portions due to the first plasma processing process are removed. By the removal of by-products stuck to the edge portions of the substrates and the tray during plasma processing, product quality is improved.
摘要:
A plasma processing apparatus and a method of plasma processing using the same obviate a problem in which an excessive amount of processing gas is supplied momentarily during an initial stage of the gas supply. In the process of supplying gas, a main controller outputs to a mass flow controller a flow-rate setting command signal preset for “zero flow” prior to opening a gas shut-off valve, which opens/closes a gas supply passage, and another flow-rate setting command signal set for “a specific flow rate” only after the gas shut-off valve is opened.
摘要:
A bare chip is mounted on a land of a substrate, and electrodes on an upper surface of the bare chip are connected with pads by means of wires. The pads are formed in lines so as to face the land, and electrodes for the soldering of electrodes of rectangular electronic parts are formed in the empty spaces between the vertical and horizontal lines of pads. After soldering the rectangular electronic parts, the bare chip is mounted and then sealed with resin. The rectangular electronic parts soldered between the lines of pads are entirely or partly sealed with the resin as well as the bare chip. The rectangular electronic parts are mounted in the spaces between the lines of pads, and therefore the bare chip and the rectangular electronic parts can be mounted at a higher density so that the substrate can be made smaller and more compact.
摘要:
A plasma-processing apparatus providing a resin mold domed enough to allow no bonding wires to be exposed is presented. The plasma-processing apparatus cleans a board including a chip mounted thereon and a disposing area for a pad formed around the chip. The apparatus includes a chamber for accommodating the board; an electrode mounted to the chamber for generating plasma in the chamber with a voltage applied thereto, a table for supporting the board in the chamber, and a masking member which is provided above the board. The masking member has an opening for exposing the chip and the disposing area to the plasma.