PLASMA PROCESSING METHOD FOR SUBSTRATES
    1.
    发明申请
    PLASMA PROCESSING METHOD FOR SUBSTRATES 有权
    基板等离子体处理方法

    公开(公告)号:US20130168353A1

    公开(公告)日:2013-07-04

    申请号:US13823955

    申请日:2011-09-29

    IPC分类号: B44C1/22

    摘要: A process for, with use of a tray in which substrate receiving holes are provided and which has substrate support portions protruding from inner walls of the substrate receiving holes, placing the tray onto a tray support portion of a substrate stage and placing substrates onto the substrate holding portions, so that edge portions of the substrates projected out of end edges of the substrate holding portions and the substrate support portions are separated; a process for reducing pressure in a chamber and supplying a process gas thereto to fulfill plasma processing for the substrates; and a process for, with the tray and the substrates placed on the substrate stage, reducing the pressure in the chamber and supplying a process gas to fulfill plasma processing so that by-products stuck to edge portions of the substrates and the substrate support portions are removed.

    摘要翻译: 一种使用托盘的方法,其中设置有基板接收孔,并且具有从基板接收孔的内壁突出的基板支撑部分,将托盘放置在基板台的托盘支撑部分上并将基板放置在基板上 保持部分,使得从基板保持部分和基板支撑部分的端部边缘突出的基板的边缘部分被分离; 用于减小腔室中的压力并向其提供处理气体以实现基底的等离子体处理的方法; 以及用于将托盘和基板放置在基板台上的方法,减小了室中的压力并提供处理气体以实现等离子体处理,使得粘附到基板和基板支撑部分的边缘部分的副产物是 删除。

    Plasma processing method for substrates
    2.
    发明授权
    Plasma processing method for substrates 有权
    基板等离子体处理方法

    公开(公告)号:US09073385B2

    公开(公告)日:2015-07-07

    申请号:US13823955

    申请日:2011-09-29

    摘要: A substrate placement process uses a tray in which a plurality of substrate receiving holes are provided to receive substrates and which has substrate support portions protruding from inner walls of the substrate receiving holes. The tray is placed onto a tray support portion of a substrate stage and places substrates onto substrate holding portions, respectively, so that edge portions of the substrates projected beyond end edges of the substrate holding portions and are apart from the substrate support portions. The first plasma processing process reduces internal pressure of a chamber and supplies a process gas thereto to fulfill plasma processing for the individual substrates. A second plasma processing process with the tray and the individual substrates placed on the substrate stage, reduces the internal pressure of the chamber and supplies a process gas to fulfill plasma processing so that by-products stuck to edge portions of the substrates and the substrate support portions due to the first plasma processing process are removed. By the removal of by-products stuck to the edge portions of the substrates and the tray during plasma processing, product quality is improved.

    摘要翻译: 衬底放置过程使用其中设置有多个衬底接收孔的托盘来接收衬底,并且具有从衬底接收孔的内壁突出的衬底支撑部分。 托盘被放置在基板台的托盘支撑部分上,并且将基板分别放置在基板保持部分上,使得基板的边缘部分突出超过基板保持部分的端部边缘并且离开基板支撑部分。 第一等离子体处理工艺降低了室的内部压力,并向其提供工艺气体以实现各个衬底的等离子体处理。 第二等离子体处理工艺,其中托盘和单独的基板放置在基板台上,降低了室的内部压力,并提供了处理气体以实现等离子体处理,使得副产物粘附到基板的边缘部分和基板支撑 去除由于第一等离子体处理过程引起的部分。 通过在等离子体处理期间去除粘附到基板和托盘的边缘部分的副产物,提高了产品质量。

    Plasma processing apparatus and method of processing

    公开(公告)号:US06551444B2

    公开(公告)日:2003-04-22

    申请号:US10118244

    申请日:2002-04-09

    IPC分类号: H01L2100

    摘要: A plasma processing apparatus and a method of plasma processing using the same obviate a problem in which an excessive amount of processing gas is supplied momentarily during an initial stage of the gas supply. In the process of supplying gas, a main controller outputs to a mass flow controller a flow-rate setting command signal preset for “zero flow” prior to opening a gas shut-off valve, which opens/closes a gas supply passage, and another flow-rate setting command signal set for “a specific flow rate” only after the gas shut-off valve is opened.