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公开(公告)号：US09073385B2
公开(公告)日：2015-07-07
申请号：US13823955
申请日：2011-09-29
IPC分类号： H01L21/67 , B44C1/22 , H01L21/687 , H01L33/00
CPC分类号： B44C1/227 , H01L21/67069 , H01L21/68742 , H01L21/68771 , H01L33/005
摘要： A substrate placement process uses a tray in which a plurality of substrate receiving holes are provided to receive substrates and which has substrate support portions protruding from inner walls of the substrate receiving holes. The tray is placed onto a tray support portion of a substrate stage and places substrates onto substrate holding portions, respectively, so that edge portions of the substrates projected beyond end edges of the substrate holding portions and are apart from the substrate support portions. The first plasma processing process reduces internal pressure of a chamber and supplies a process gas thereto to fulfill plasma processing for the individual substrates. A second plasma processing process with the tray and the individual substrates placed on the substrate stage, reduces the internal pressure of the chamber and supplies a process gas to fulfill plasma processing so that by-products stuck to edge portions of the substrates and the substrate support portions due to the first plasma processing process are removed. By the removal of by-products stuck to the edge portions of the substrates and the tray during plasma processing, product quality is improved.
摘要翻译： 衬底放置过程使用其中设置有多个衬底接收孔的托盘来接收衬底，并且具有从衬底接收孔的内壁突出的衬底支撑部分。 托盘被放置在基板台的托盘支撑部分上，并且将基板分别放置在基板保持部分上，使得基板的边缘部分突出超过基板保持部分的端部边缘并且离开基板支撑部分。 第一等离子体处理工艺降低了室的内部压力，并向其提供工艺气体以实现各个衬底的等离子体处理。 第二等离子体处理工艺，其中托盘和单独的基板放置在基板台上，降低了室的内部压力，并提供了处理气体以实现等离子体处理，使得副产物粘附到基板的边缘部分和基板支撑 去除由于第一等离子体处理过程引起的部分。 通过在等离子体处理期间去除粘附到基板和托盘的边缘部分的副产物，提高了产品质量。
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公开(公告)号：US20130168353A1
公开(公告)日：2013-07-04
申请号：US13823955
申请日：2011-09-29
IPC分类号： B44C1/22
CPC分类号： B44C1/227 , H01L21/67069 , H01L21/68742 , H01L21/68771 , H01L33/005
摘要： A process for, with use of a tray in which substrate receiving holes are provided and which has substrate support portions protruding from inner walls of the substrate receiving holes, placing the tray onto a tray support portion of a substrate stage and placing substrates onto the substrate holding portions, so that edge portions of the substrates projected out of end edges of the substrate holding portions and the substrate support portions are separated; a process for reducing pressure in a chamber and supplying a process gas thereto to fulfill plasma processing for the substrates; and a process for, with the tray and the substrates placed on the substrate stage, reducing the pressure in the chamber and supplying a process gas to fulfill plasma processing so that by-products stuck to edge portions of the substrates and the substrate support portions are removed.
摘要翻译： 一种使用托盘的方法，其中设置有基板接收孔，并且具有从基板接收孔的内壁突出的基板支撑部分，将托盘放置在基板台的托盘支撑部分上并将基板放置在基板上 保持部分，使得从基板保持部分和基板支撑部分的端部边缘突出的基板的边缘部分被分离; 用于减小腔室中的压力并向其提供处理气体以实现基底的等离子体处理的方法; 以及用于将托盘和基板放置在基板台上的方法，减小了室中的压力并提供处理气体以实现等离子体处理，使得粘附到基板和基板支撑部分的边缘部分的副产物是 删除。
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公开(公告)号：US08883025B2
公开(公告)日：2014-11-11
申请号：US13701170
申请日：2011-05-25
申请人： Shogo Okita , Yasuhiro Onishi
发明人： Shogo Okita , Yasuhiro Onishi
IPC分类号： H01L21/66 , H01L21/68 , H01L21/683 , H01L21/67 , H01L21/687 , H01L21/677 , H01J37/32 , B44C1/22 , H05H1/46
CPC分类号： B44C1/227 , H01J37/32779 , H01L21/67109 , H01L21/67742 , H01L21/67754 , H01L21/681 , H01L21/6831 , H01L21/68707 , H01L21/68742 , H01L21/68764 , H01L21/68771 , H05H2001/4675 , Y10S438/973
摘要： A plasma processing apparatus includes a stock unit, a processing unit, and an alignment chamber. The stock unit supplies and collects a conveyable tray formed with a plurality of housing holes in each of which a wafer is housed. In the processing chamber, plasma processing is executed on the wafers housed in the tray supplied from the stock unit. The alignment chamber is provided with a rotating table on which the tray before being subjected to the plasma processing is set to perform positioning of the wafers on the rotating table. A housing state determination unit of a control device determines whether or not the wafer is misaligned with respect the housing hole of the tray based on a height detected by height detecting sensors.
摘要翻译： 等离子体处理装置包括库存单元，处理单元和对准室。 库存单元供应和收集形成有多个容纳孔的可输送托盘，每个容纳孔容纳晶片。 在处理室中，在从储存单元供应的托盘中容纳的晶片上执行等离子体处理。 对准室设置有旋转台，其上设置经受等离子体处理之前的托盘，以执行晶片在旋转台上的定位。 控制装置的壳体状态确定单元基于由高度检测传感器检测到的高度来确定晶片是否相对于托盘的容纳孔不对准。
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公开(公告)号：US20140154832A1
公开(公告)日：2014-06-05
申请号：US14233276
申请日：2012-06-29
申请人： Shogo Okita , Syouzou Watanabe
发明人： Shogo Okita , Syouzou Watanabe
CPC分类号： H01L31/18 , H01J37/32715 , H01J37/32724 , H01J2237/201 , H01L21/67069 , H01L21/68764 , H01L21/68785
摘要： A dry etching apparatus includes a tray for conveying substrates. The tray has substrate housing holes as through holes each capable of housing the three substrates. The substrates are supported by a substrate support section protruding from a hole wall of each of the substrate housing holes. A stage is provided in a chamber in which plasma is generated. The stage includes substrate installation sections to be inserted from a lower surface side of the tray to the substrate housing holes so that lower surfaces of the plurality of the substrates transferred from the substrate support section are installed on substrate installation surfaces that are their upper end surfaces. High shape controllability and favorable productivity for the angular substrate can be implemented while preventing increased in size of the apparatus.
摘要翻译： 干蚀刻装置包括用于输送基板的托盘。 托盘具有作为通孔的基板容纳孔，每个孔能够容纳三个基板。 基板由从每个基板容纳孔的孔壁突出的基板支撑部支撑。 在其中产生等离子体的室中提供阶段。 平台包括从托盘的下表面侧插入到基板容纳孔的基板安装部，使得从基板支撑部转移的多个基板的下表面安装在作为其上端面的基板安装面 。 可以在防止装置的尺寸增大的同时实现角形衬底的高形状可控性和良好的生产率。
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公开(公告)号：US08673166B2
公开(公告)日：2014-03-18
申请号：US12994940
申请日：2009-05-28
申请人： Shogo Okita , Hiromi Asakura , Syouzou Watanabe , Toshihiro Wada , Mitsuhiro Okune , Mitsuru Hiroshima
发明人： Shogo Okita , Hiromi Asakura , Syouzou Watanabe , Toshihiro Wada , Mitsuhiro Okune , Mitsuru Hiroshima
IPC分类号： H01L21/683
CPC分类号： H01L21/6831 , H01J37/32431 , H01L21/67069 , H01L21/6833 , H01L21/68742 , Y10S414/137 , Y10T279/23
摘要： In a plasma processing apparatus, thrust-up pins are elevated and a thrust-up force is detected when electrostatic attraction for a substrate by a substrate holding device is ceased after completion of plasma processing, the elevation of the thrust-up pins is ceased upon detection of a detection threshold, and a stepped elevating operation in which the elevation and stoppage of the thrust-up pins are repeated a plurality of times are thereafter commenced on condition that the detected thrust-up force falls to or below the detection threshold and that release of the substrate from a placement surface has not been completed. In the stepped elevating operation, operation timing of the thrust-up device is controlled so that the completion of the release of the substrate from the placement surface is detected when the thrust-up pins are stopped after being elevated and so that the stepped elevating operation is continued on condition that the release has not been completed.
摘要翻译： 在等离子体处理装置中，在等离子体处理完成之后，由于基板保持装置对基板的静电吸引停止，所以上推销被升高，并且检测到上推力，因此停止上推销的升高 检测阈值的检测，并且其中多次加重上推销的升降动作的阶梯式升降动作，在检测到的上推力降至或低于检测阈值的条件下开始，并且 基板从放置表面的释放尚未完成。 在阶梯式升降操作中，控制上推装置的动作正时，使得当升降销在升高后停止时检测到基板从放置面的释放的完成，并且使阶梯式升降操作 在发布尚未完成的情况下继续进行。
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公开(公告)号：US08303765B2
公开(公告)日：2012-11-06
申请号：US12593381
申请日：2008-03-28
申请人： Shogo Okita , Syouzou Watanabe , Hiroyuki Suzuki , Ryuuzou Houtin
发明人： Shogo Okita , Syouzou Watanabe , Hiroyuki Suzuki , Ryuuzou Houtin
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01L21/67069 , H01J37/321
摘要： A plasma etching apparatus includes a pressure-reducible chamber 1, a placement section 3 for supporting an object to be treated within the chamber 1, a dielectric member 5 for sealing an upper opening of the chamber 1, and a coil 4 provided outside the dielectric member 5. The coil 4 generates a plasma 6 in the chamber 1 by inductive coupling so that the object 2 is subjected to etching. The dielectric member 5 has recess portions 5c discontinuous to one another. Portions of the dielectric member 5 form large-thickness portions 5b. A thickness of the dielectric member 5 in the recess portions 5c is smaller than a thickness of the large-thickness portions 5b. The recess portions 5c are placed according to distribution densities of conductors constituting the coil 4.
摘要翻译： 等离子体蚀刻装置包括可压缩室1，用于在室1内支撑待处理物体的放置部3，用于密封室1的上部开口的电介质构件5和设置在电介质外侧的线圈4 线圈4通过电感耦合在腔室1中产生等离子体6，从而对物体2进行蚀刻。 电介质构件5具有彼此不连续的凹部5c。 电介质部件5的一部分形成大厚度部分5b。 凹部5c中的电介质部件5的厚度比大厚度部5b的厚度小。 凹部5c根据构成线圈4的导体的分布密度配置。
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公开(公告)号：US08231798B2
公开(公告)日：2012-07-31
申请号：US12578844
申请日：2009-10-14
IPC分类号： B44C1/22
CPC分类号： F27D5/0068 , H01J37/321 , H01J37/32706 , H01L21/3065 , H01L21/67069
摘要： A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. A dielectric plate includes a tray support surface supporting a lower surface of the tray, substrate placement portions inserted from a lower surface side of the tray into the substrate accommodation holes and having a substrate placement surface at its upper end surface. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement surface. The substrate is retained on the substrate placement surface with high degree of adhesion. Cooling efficiency of the substrate is improved and processing is uniform at the entire region of the substrate surface.
摘要翻译： 用于干蚀刻装置的托盘包括穿透厚度方向的基板容纳孔和支撑基板的下表面的外周边缘部分的基板支撑部。 电介质板包括支撑托盘的下表面的托盘支撑表面，从托盘的下表面侧插入到基板容纳孔中的基板放置部分，并且在其上端表面具有基板放置表面。 直流电压施加机构对静电吸引电极施加直流电压。 导热气体供给机构在基板和基板配置面之间提供导热气体。 基板被保持在基板放置表面上，具有高度的附着力。 提高了基板的冷却效率，并且在基板表面的整个区域处理均匀。
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8.发明申请公开(公告)号：US20100173431A1
公开(公告)日：2010-07-08
申请号：US12676186
申请日：2008-08-25
IPC分类号： H01L21/31 , H01L21/3065
CPC分类号： H01L21/02032 , H01L21/3065
摘要： Provided is a wafer reclamation method for reclaiming a semiconductor wafer, on which a different material layer is formed, by removing the different material layer. The wafer reclamation method includes a physically removing step of physically removing the different material layer, a film forming step of forming a film on a surface of the semiconductor wafer from which the different material layer has been removed in the physically removing step, and a dry etching step of etching the semiconductor wafer by plasma together with the film formed in the film forming step.
摘要翻译： 提供了通过去除不同的材料层来回收其上形成有不同材料层的半导体晶片的晶片回收方法。 晶片回收方法包括物理去除不同材料层的物理去除步骤，在物理去除步骤中在其上除去不同材料层的半导体晶片的表面上形成膜的成膜步骤，以及干燥 蚀刻步骤，通过等离子体与形成在膜形成步骤中的膜一起蚀刻半导体晶片。
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公开(公告)号：US07736528B2
公开(公告)日：2010-06-15
申请号：US12090214
申请日：2006-10-10
CPC分类号： F27D5/0068 , H01J37/321 , H01J37/32706 , H01L21/3065 , H01L21/67069
摘要： A tray 15 for a dry etching apparatus 1 has substrate accommodation holes 19A to 19D penetrating thickness direction and a substrate support portion 21 supporting an outer peripheral edge portion of a lower surface 2a of a substrate 2. A dielectric plate 23 has a tray support surface 28 supporting a lower surface of the tray 15, substrate placement portions 29A through 29D inserted from a lower surface side of the tray 15 into the substrate accommodation holes 19A through 19D and having a substrate placement surface 31 at its upper end surface for placing the substrate 2. A dc voltage applying mechanism 43 applies a dc voltage to an electrostatic attraction electrode 40. A heat conduction gas supply mechanism 45 supplies a heat conduction gas between the substrate 2 and substrate placement surface 31. The substrate 2 can be retained on the substrate placement surface 31 with high degree of adhesion. This results in that the cooling efficiency of the substrate 2 is improved and processing is uniformed at the entire region of the substrate surface including the vicinity of the outer peripheral edge.
摘要翻译： 用于干蚀刻装置1的托盘15具有穿透厚度方向的基板容纳孔19A至19D以及支撑基板2的下表面2a的外周边缘部分的基板支撑部21.电介质板23具有托盘支撑表面 28，支撑托盘15的下表面，从托盘15的下表面侧插入到基板容纳孔19A至19D中的基板放置部分29A至29D，并且在其上端面具有用于放置基板的基板放置表面31 直流电压施加机构43对静电吸引电极40施加直流电压。导热气体供给机构45在基板2和基板配置面31之间供给导热气体。基板2能够保持在基板 放置面31具有高度的粘合力。 这导致基板2的冷却效率提高，并且在包括外周边缘附近的基板表面的整个区域处理均匀。
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公开(公告)号：US08563332B2
公开(公告)日：2013-10-22
申请号：US12676186
申请日：2008-08-25
IPC分类号： H01L21/31 , H01L21/3065
CPC分类号： H01L21/02032 , H01L21/3065
摘要： Provided is a wafer reclamation method for reclaiming a semiconductor wafer, on which a different material layer is formed, by removing the different material layer. The wafer reclamation method includes a physically removing step of physically removing the different material layer, a film forming step of forming a film on a surface of the semiconductor wafer from which the different material layer has been removed in the physically removing step, and a dry etching step of etching the semiconductor wafer by plasma together with the film formed in the film forming step.
摘要翻译： 提供了通过去除不同的材料层来回收其上形成有不同材料层的半导体晶片的晶片回收方法。 晶片回收方法包括物理去除不同材料层的物理去除步骤，在物理去除步骤中在其上除去不同材料层的半导体晶片的表面上形成膜的成膜步骤，以及干燥 蚀刻步骤，通过等离子体与形成在膜形成步骤中的膜一起蚀刻半导体晶片。
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