Plasma processing method for substrates
    1.
    发明授权
    Plasma processing method for substrates 有权
    基板等离子体处理方法

    公开(公告)号:US09073385B2

    公开(公告)日:2015-07-07

    申请号:US13823955

    申请日:2011-09-29

    摘要: A substrate placement process uses a tray in which a plurality of substrate receiving holes are provided to receive substrates and which has substrate support portions protruding from inner walls of the substrate receiving holes. The tray is placed onto a tray support portion of a substrate stage and places substrates onto substrate holding portions, respectively, so that edge portions of the substrates projected beyond end edges of the substrate holding portions and are apart from the substrate support portions. The first plasma processing process reduces internal pressure of a chamber and supplies a process gas thereto to fulfill plasma processing for the individual substrates. A second plasma processing process with the tray and the individual substrates placed on the substrate stage, reduces the internal pressure of the chamber and supplies a process gas to fulfill plasma processing so that by-products stuck to edge portions of the substrates and the substrate support portions due to the first plasma processing process are removed. By the removal of by-products stuck to the edge portions of the substrates and the tray during plasma processing, product quality is improved.

    摘要翻译: 衬底放置过程使用其中设置有多个衬底接收孔的托盘来接收衬底,并且具有从衬底接收孔的内壁突出的衬底支撑部分。 托盘被放置在基板台的托盘支撑部分上,并且将基板分别放置在基板保持部分上,使得基板的边缘部分突出超过基板保持部分的端部边缘并且离开基板支撑部分。 第一等离子体处理工艺降低了室的内部压力,并向其提供工艺气体以实现各个衬底的等离子体处理。 第二等离子体处理工艺,其中托盘和单独的基板放置在基板台上,降低了室的内部压力,并提供了处理气体以实现等离子体处理,使得副产物粘附到基板的边缘部分和基板支撑 去除由于第一等离子体处理过程引起的部分。 通过在等离子体处理期间去除粘附到基板和托盘的边缘部分的副产物,提高了产品质量。

    PLASMA PROCESSING METHOD FOR SUBSTRATES
    2.
    发明申请
    PLASMA PROCESSING METHOD FOR SUBSTRATES 有权
    基板等离子体处理方法

    公开(公告)号:US20130168353A1

    公开(公告)日:2013-07-04

    申请号:US13823955

    申请日:2011-09-29

    IPC分类号: B44C1/22

    摘要: A process for, with use of a tray in which substrate receiving holes are provided and which has substrate support portions protruding from inner walls of the substrate receiving holes, placing the tray onto a tray support portion of a substrate stage and placing substrates onto the substrate holding portions, so that edge portions of the substrates projected out of end edges of the substrate holding portions and the substrate support portions are separated; a process for reducing pressure in a chamber and supplying a process gas thereto to fulfill plasma processing for the substrates; and a process for, with the tray and the substrates placed on the substrate stage, reducing the pressure in the chamber and supplying a process gas to fulfill plasma processing so that by-products stuck to edge portions of the substrates and the substrate support portions are removed.

    摘要翻译: 一种使用托盘的方法,其中设置有基板接收孔,并且具有从基板接收孔的内壁突出的基板支撑部分,将托盘放置在基板台的托盘支撑部分上并将基板放置在基板上 保持部分,使得从基板保持部分和基板支撑部分的端部边缘突出的基板的边缘部分被分离; 用于减小腔室中的压力并向其提供处理气体以实现基底的等离子体处理的方法; 以及用于将托盘和基板放置在基板台上的方法,减小了室中的压力并提供处理气体以实现等离子体处理,使得粘附到基板和基板支撑部分的边缘部分的副产物是 删除。

    PLASMA PROCESSING DEVICE AND PLASMA DISCHARGE STATE MONITORING DEVICE
    3.
    发明申请
    PLASMA PROCESSING DEVICE AND PLASMA DISCHARGE STATE MONITORING DEVICE 有权
    等离子体处理装置和等离子体放电状态监测装置

    公开(公告)号:US20100132890A1

    公开(公告)日:2010-06-03

    申请号:US12598815

    申请日:2008-08-21

    IPC分类号: H01L21/3065

    CPC分类号: H01J37/32935 H01J37/32091

    摘要: An object is to provide a plasma processing device capable of highly accurately monitoring an operation state including whether or not the plasma discharge is executed, whether the discharge is normal or abnormal and whether or not the maintenance work of the vacuum chamber is necessary.A discharge detection sensor 23, in which a dielectric member 21 and a probe electrode unit 22 are combined with each other, is attached to an opening portion 2a provided in a lid portion 2 composing a vacuum chamber. A change in electric potential induced according to a change in plasma discharge in a probe electrode is received by a plurality of wave-form detecting portions and a detection signal is outputted each time a change in electric potential agreeing with a predetermined different condition appears. The detection signal outputted from the corresponding wave-form detecting portion is counted by the plurality of wave-form detecting portions and the counted value is held. According to the counted value, an operation state is highly accurately monitored which includes whether or not the plasma discharge is executed, whether the discharge is normal or abnormal and whether or not the maintenance work of the vacuum chamber is necessary.

    摘要翻译: 本发明的目的是提供一种能够高精度地监视包括是否执行等离子体放电的操作状态,放电是正常还是异常以及是否需要真空室的维护工作的等离子体处理装置。 将其中电介质构件21和探针电极单元22彼此组合的放电检测传感器23附接到设置在构成真空室的盖部分2中的开口部分2a。 通过多个波形检测部分接收根据探针电极中的等离子体放电的变化而引起的电位变化,并且每当出现与预定的不同状态一致的电位变化时,输出检测信号。 由对应的波形检测部分输出的检测信号由多个波形检测部分计数,并保持计数值。 根据计数值,高精度地监视操作状态,其包括是否执行等离子体放电,放电是正常还是异常,以及是否需要真空室的维护工作。

    Plasma processing device
    5.
    发明授权
    Plasma processing device 有权
    等离子处理装置

    公开(公告)号:US08956499B2

    公开(公告)日:2015-02-17

    申请号:US12671358

    申请日:2008-08-21

    IPC分类号: C23F1/08 H01J37/32

    CPC分类号: H01J37/32091 H01J37/32935

    摘要: An object is to provide a plasma processing device capable of accurately judging whether or not the proper maintenance time has come which is necessary for maintaining an operation state of a device in the best condition.A discharge detection sensor 23, in which a dielectric member 21 and a probe electrode unit 22 are combined with each other, is attached to an opening portion 2a provided in a lid portion 2 composing a vacuum chamber. A change in the electric potential induced in the probe electrode 22b according to a change in plasma discharge is received and whether or not the maintenance work is necessary is judged by comparing a counted value, which is obtained when a leak discharge wave-form counter 39 counts the number of times of the detection of detecting a V-type wave form of a V-shaped specific pattern, which is caused by leak discharge correlated with the attachment of foreign object in the vacuum chamber, by a V-type wave-form detecting portion 35, with an allowable value which has been previously set by a maintenance judging portion 44.

    摘要翻译: 本发明的目的是提供一种等离子体处理装置,其能够准确地判断维持设备的运行状态为最佳状态所需的适当的维护时间。 将其中电介质构件21和探针电极单元22彼此组合的放电检测传感器23附接到设置在构成真空室的盖部分2中的开口部分2a。 接收根据等离子体放电的变化而在探针电极22b中感应的电位的变化,并且通过比较当泄漏放电波形计数器39所获得的计数值来判断是否需要维护工作 计数检测V型波形的V型波形的检测的次数,该V型波形由V型波形形成的泄漏放电引起,该泄漏放电与真空室中的异物的附着相关 检测部分35具有由维护判断部分44预先设置的允许值。

    Plasma processing device and method of monitoring plasma discharge state in plasma processing device
    6.
    发明授权
    Plasma processing device and method of monitoring plasma discharge state in plasma processing device 有权
    等离子体处理装置和等离子体处理装置中等离子体放电状态的监测方法

    公开(公告)号:US08668836B2

    公开(公告)日:2014-03-11

    申请号:US12664477

    申请日:2008-08-21

    摘要: An object is to provide a plasma processing device capable of rightly monitoring existence of plasma discharge and also rightly monitoring existence of abnormal discharge. Another object of the present invention is to provide a method of monitoring a state of plasma discharge in the plasma processing device.A discharge detection sensor 23, in which a dielectric member 21 and a probe electrode unit 22 are combined with each other, is attached to an opening portion 2a provided in a lid portion 2 composing a vacuum chamber. A change in the electric potential induced in the probe electrode 22b according to a change in plasma discharge is received, electric potential change wave-forms of specific patterns are respectively detected by an N-type wave-form detecting portion 34 and V-type wave-form detecting 35, and a discharge state judgment including a judgment of whether the electric discharge exists or does not exist and whether the electric discharge is normal or abnormal is made according to a counted value of counting the number of times of appearance of these electric potential change wave forms for each type of wave-form by a discharge ON wave-form counter 36, a discharge OFF wave-form counter 37, an abnormal discharge wave-form counter 38 and a leak discharge wave-form counter 39.

    摘要翻译: 本发明的目的是提供一种能够正确地监视等离子体放电的存在并且正确地监视异常放电的存在的等离子体处理装置。 本发明的另一个目的是提供一种监测等离子体处理装置中的等离子体放电状态的方法。 将其中电介质构件21和探针电极单元22彼此组合的放电检测传感器23附接到设置在构成真空室的盖部分2中的开口部分2a。 接收根据等离子体放电的变化而在探针电极22b中感应的电位的变化,分别通过N型波形检测部34和V型波检测特定图案的电位变化波形 形状检测35,以及包括判断放电存在或不存在以及放电正常或异常的放电状态判断是否根据计数这些电的出现次数的计数值 通过放电ON波形计数器36,放电OFF波形计数器37,异常放电波形计数器38和泄漏放电波形计数器39对于每种波形的电位变化波形成。

    Plasma processing device and plasma discharge state monitoring device
    7.
    发明授权
    Plasma processing device and plasma discharge state monitoring device 有权
    等离子体处理装置和等离子体放电状态监测装置

    公开(公告)号:US08585862B2

    公开(公告)日:2013-11-19

    申请号:US12598815

    申请日:2008-08-21

    CPC分类号: H01J37/32935 H01J37/32091

    摘要: An object is to provide a plasma processing device capable of highly accurately monitoring an operation state including whether or not the plasma discharge is executed, whether the discharge is normal or abnormal and whether or not the maintenance work of the vacuum chamber is necessary.A discharge detection sensor 23, in which a dielectric member 21 and a probe electrode unit 22 are combined with each other, is attached to an opening portion 2a provided in a lid portion 2 composing a vacuum chamber. A change in electric potential induced according to a change in plasma discharge in a probe electrode is received by a plurality of wave-form detecting portions and a detection signal is outputted each time a change in electric potential agreeing with a predetermined different condition appears. The detection signal outputted from the corresponding wave-form detecting portion is counted by the plurality of wave-form detecting portions and the counted value is held. According to the counted value, an operation state is highly accurately monitored which includes whether or not the plasma discharge is executed, whether the discharge is normal or abnormal and whether or not the maintenance work of the vacuum chamber is necessary.

    摘要翻译: 本发明的目的是提供一种能够高精度地监视包括是否执行等离子体放电的操作状态,放电是正常还是异常以及是否需要真空室的维护工作的等离子体处理装置。 将其中电介质构件21和探针电极单元22彼此组合的放电检测传感器23附接到设置在构成真空室的盖部分2中的开口部分2a。 通过多个波形检测部分接收根据探针电极中的等离子体放电的变化而引起的电位变化,并且每当出现与预定的不同状态一致的电位变化时,输出检测信号。 由对应的波形检测部分输出的检测信号由多个波形检测部分计数,并保持计数值。 根据计数值,高精度地监视操作状态,其包括是否执行等离子体放电,放电是正常还是异常,以及是否需要真空室的维护工作。

    Plasma treatment apparatus and plasma treatment method
    8.
    发明授权
    Plasma treatment apparatus and plasma treatment method 有权
    等离子体处理装置和等离子体处理方法

    公开(公告)号:US08237367B2

    公开(公告)日:2012-08-07

    申请号:US12738854

    申请日:2008-11-27

    IPC分类号: H01J7/24

    摘要: According to the plasma treatment on an object accommodated in the processing room, the plasma treatment is carried out as follows. The discharge detecting sensor detects a signal of potential change caused with change in plasma discharge. Receiving the signal, the signal recording section temporarily records the signal as signal data indicating potential change. Referencing the signal data, the signal analysis section extracts index data. The index data shows a condition of plasma discharge, for example, as a count value for discharge-start waves, a count value for abnormal discharge, a count value for feeble arc discharge. The device control section judges a condition of plasma discharge by monitoring the index data and carries out the retry process, the accumulative plasma process, and the maintenance judgment process for performing plasma treatment operations properly.

    摘要翻译: 根据对容纳在处理室内的物体进行等离子体处理,如下进行等离子体处理。 放电检测传感器检测由等离子体放电的变化引起的电位变化的信号。 接收信号时,信号记录部分临时记录信号作为指示电位变化的信号数据。 参考信号数据,信号分析部分提取索引数据。 索引数据表示等离子体放电的条件,例如放电启动波的计数值,异常放电的计数值,微弱电弧放电的计数值。 设备控制部通过监视指标数据来判断等离子体放电的状态,并进行适当的等离子体处理操作的重试处理,累积等离子体处理和维护判断处理。

    PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD
    9.
    发明申请
    PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD 有权
    等离子体处理装置和等离子体处理方法

    公开(公告)号:US20100243470A1

    公开(公告)日:2010-09-30

    申请号:US12738854

    申请日:2008-11-27

    IPC分类号: H01L21/3065

    摘要: According to the plasma treatment on an object accommodated in the processing room, the plasma treatment is carried out as follows. The discharge detecting sensor detects a signal of potential change caused with change in plasma discharge. Receiving the signal, the signal recording section temporarily records the signal as signal data indicating potential change. Referencing the signal data, the signal analysis section extracts index data. The index data shows a condition of plasma discharge, for example, as a count value for discharge-start waves, a count value for abnormal discharge, a count value for feeble arc discharge. The device control section judges a condition of plasma discharge by monitoring the index data and carries out the retry process, the accumulative plasma process, and the maintenance judgment process for performing plasma treatment operations properly.

    摘要翻译: 根据对容纳在处理室内的物体进行等离子体处理,如下进行等离子体处理。 放电检测传感器检测由等离子体放电的变化引起的电位变化的信号。 接收信号时,信号记录部分临时记录信号作为指示电位变化的信号数据。 参考信号数据,信号分析部分提取索引数据。 索引数据表示等离子体放电的条件,例如放电启动波的计数值,异常放电的计数值,微弱电弧放电的计数值。 设备控制部通过监视指标数据来判断等离子体放电的状态,并进行适当的等离子体处理操作的重试处理,累积等离子体处理和维护判断处理。

    PLASMA PROCESSING DEVICE AND METHOD OF MONITORING PLASMA DISCHARGE STATE IN PLASMA PROCESSING DEVICE
    10.
    发明申请
    PLASMA PROCESSING DEVICE AND METHOD OF MONITORING PLASMA DISCHARGE STATE IN PLASMA PROCESSING DEVICE 有权
    等离子体处理装置和等离子体处理装置中等离子体放电状态的监测方法

    公开(公告)号:US20100176085A1

    公开(公告)日:2010-07-15

    申请号:US12664477

    申请日:2008-08-21

    IPC分类号: B44C1/22 C23F1/08

    摘要: An object is to provide a plasma processing device capable of rightly monitoring existence of plasma discharge and also rightly monitoring existence of abnormal discharge. Another object of the present invention is to provide a method of monitoring a state of plasma discharge in the plasma processing device.A discharge detection sensor 23, in which a dielectric member 21 and a probe electrode unit 22 are combined with each other, is attached to an opening portion 2a provided in a lid portion 2 composing a vacuum chamber. A change in the electric potential induced in the probe electrode 22b according to a change in plasma discharge is received, electric potential change wave-forms of specific patterns are respectively detected by an N-type wave-form detecting portion 34 and V-type wave-form detecting 35, and a discharge state judgment including a judgment of whether the electric discharge exists or does not exist and whether the electric discharge is normal or abnormal is made according to a counted value of counting the number of times of appearance of these electric potential change wave forms for each type of wave-form by a discharge ON wave-form counter 36, a discharge OFF wave-form counter 37, an abnormal discharge wave-form counter 38 and a leak discharge wave-form counter 39.

    摘要翻译: 本发明的目的是提供一种能够正确地监视等离子体放电的存在并且正确地监视异常放电的存在的等离子体处理装置。 本发明的另一个目的是提供一种监测等离子体处理装置中的等离子体放电状态的方法。 将其中电介质构件21和探针电极单元22彼此组合的放电检测传感器23附接到设置在构成真空室的盖部分2中的开口部分2a。 接收根据等离子体放电的变化而在探针电极22b中感应的电位的变化,分别通过N型波形检测部34和V型波检测特定图案的电位变化波形 形状检测35,以及包括判断放电存在或不存在以及放电正常或异常的放电状态判断是否根据计数这些电的出现次数的计数值 通过放电ON波形计数器36,放电OFF波形计数器37,异常放电波形计数器38和泄漏放电波形计数器39对于每种波形的电位变化波形成。