公开(公告)号：US20150162219A1

公开(公告)日：2015-06-11

申请号：US14412847

申请日：2012-07-11

申请人： Mamoru Terai ,  Shiori Idaka ,  Yoshiyuki Nakaki ,  Yoshiyuki Suehiro

发明人： Mamoru Terai ,  Shiori Idaka ,  Yoshiyuki Nakaki ,  Yoshiyuki Suehiro

IPC分类号： H01L21/56 ,  H01L23/31 ,  H01L29/417 ,  H01L21/78

CPC分类号： H01L21/56 ,  H01L21/78 ,  H01L23/31 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/4334 ,  H01L23/49503 ,  H01L23/49548 ,  H01L23/49568 ,  H01L23/562 ,  H01L24/36 ,  H01L24/37 ,  H01L24/40 ,  H01L29/417 ,  H01L2224/32245 ,  H01L2224/37147 ,  H01L2224/40137 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/84

摘要： A plurality of semiconductor elements for power control are formed on a semiconductor substrate. A stress relaxation resin layer covering a crossing region where band-shaped dicing areas dividing the semiconductor elements adjacent to each other cross is formed. The crossing region is diced to cut the stress relaxation resin layer to obtain the separate semiconductor elements. Accordingly, even with semiconductor elements produced with a compound semiconductor substrate of SiC or the like, a semiconductor device having high adhesive strength with a sealing resin and being less likely to cause cracking or peeling of the sealing resin due to thermal stress during an operation can be obtained.

摘要翻译： 用于功率控制的多个半导体元件形成在半导体衬底上。 覆盖交叉区域的应力松弛树脂层，形成分割相邻的半导体元件交叉的带状切割区域。 切割交叉区域以切割应力松弛树脂层以获得单独的半导体元件。 因此，即使利用SiC等的化合物半导体基板制造的半导体元件，也可以使用与密封树脂相比具有高粘合强度并且不太可能由于操作期间的热应力而引起的密封树脂的破裂或剥离的半导体器件， 得到。

公开(公告)号：US09385007B2

公开(公告)日：2016-07-05

申请号：US14412847

申请日：2012-07-11

申请人： Mamoru Terai ,  Shiori Idaka ,  Yoshiyuki Nakaki ,  Yoshiyuki Suehiro

发明人： Mamoru Terai ,  Shiori Idaka ,  Yoshiyuki Nakaki ,  Yoshiyuki Suehiro

IPC分类号： H01L21/56 ,  H01L23/31 ,  H01L29/417 ,  H01L21/78 ,  H01L23/433 ,  H01L23/00 ,  H01L23/495

CPC分类号： H01L21/56 ,  H01L21/78 ,  H01L23/31 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/4334 ,  H01L23/49503 ,  H01L23/49548 ,  H01L23/49568 ,  H01L23/562 ,  H01L24/36 ,  H01L24/37 ,  H01L24/40 ,  H01L29/417 ,  H01L2224/32245 ,  H01L2224/37147 ,  H01L2224/40137 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/84

摘要： A plurality of semiconductor elements for power control are formed on a semiconductor substrate. A stress relaxation resin layer covering a crossing region where band-shaped dicing areas dividing the semiconductor elements adjacent to each other cross is formed. The crossing region is diced to cut the stress relaxation resin layer to obtain the separate semiconductor elements. Accordingly, even with semiconductor elements produced with a compound semiconductor substrate of SiC or the like, a semiconductor device having high adhesive strength with a sealing resin and being less likely to cause cracking or peeling of the sealing resin due to thermal stress during an operation can be obtained.

摘要翻译： 用于功率控制的多个半导体元件形成在半导体衬底上。 覆盖交叉区域的应力松弛树脂层，形成分割相邻的半导体元件交叉的带状切割区域。 切割交叉区域以切割应力松弛树脂层以获得单独的半导体元件。 因此，即使利用SiC等的化合物半导体基板制造的半导体元件，也可以使用与密封树脂相比具有高粘合强度并且不太可能由于操作期间的热应力而引起的密封树脂的破裂或剥离的半导体器件， 得到。

公开(公告)号：US09543252B2

公开(公告)日：2017-01-10

申请号：US14412778

申请日：2012-07-11

申请人： Mamoru Terai ,  Shiori Idaka ,  Kei Yamamoto ,  Yoshiyuki Nakaki

发明人： Mamoru Terai ,  Shiori Idaka ,  Kei Yamamoto ,  Yoshiyuki Nakaki

IPC分类号： H01L23/00 ,  H01L23/495 ,  H01L23/29 ,  H01L23/373 ,  H01L21/56 ,  H01L21/78 ,  H01L29/16 ,  H01L23/31 ,  H01L23/433 ,  H01L25/07

CPC分类号： H01L23/562 ,  H01L21/56 ,  H01L21/78 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/3171 ,  H01L23/3185 ,  H01L23/3736 ,  H01L23/4334 ,  H01L23/49579 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/072 ,  H01L29/1608 ,  H01L2224/02166 ,  H01L2224/0382 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/29101 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/73265 ,  H01L2924/10272 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A plurality of semiconductor devices provided on a silicon carbide substrate are provided with electrode layers, respectively. The silicon carbide substrate is cut at a region of an exposed surface of the silicon carbide substrate that separates the electrode layers to individually separate the semiconductor devices. A stress relaxation resin is applied to each individually separated semiconductor device to cover the exposed surface at a peripheral end portion of that surface of the semiconductor device which has the electrode layer thereon. A semiconductor apparatus can thus be obtained that also allows a semiconductor device with a silicon carbide or similar compound semiconductor substrate to adhere to a sealant resin via large adhesive strength and thus allows the sealant resin to be less crackable, less peelable and the like by thermal stress caused in operation.

摘要翻译： 设置在碳化硅衬底上的多个半导体器件分别设置有电极层。 在碳化硅衬底的暴露表面的区域处切割碳化硅衬底，其分离电极层以单独地分离半导体器件。 应力松弛树脂被施加到每个单独分离的半导体器件以覆盖其上具有电极层的半导体器件的该表面的外周端部处的暴露表面。 因此，可以获得半导体装置，其也允许具有碳化硅或类似化合物半导体衬底的半导体器件通过大的粘合强度粘附到密封剂树脂，并且因此允许密封剂树脂通过热可靠性更小，可剥离性更差 操作引起的压力。

公开(公告)号：US20150171026A1

公开(公告)日：2015-06-18

申请号：US14412778

申请日：2012-07-11

申请人： Mamoru Terai ,  Shiori Idaka ,  Kei Yamamoto ,  Yoshiyuki Nakaki

发明人： Mamoru Terai ,  Shiori Idaka ,  Kei Yamamoto ,  Yoshiyuki Nakaki

IPC分类号： H01L23/00 ,  H01L21/56 ,  H01L23/495 ,  H01L23/29 ,  H01L23/373 ,  H01L21/78 ,  H01L29/16

CPC分类号： H01L23/562 ,  H01L21/56 ,  H01L21/78 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/3171 ,  H01L23/3185 ,  H01L23/3736 ,  H01L23/4334 ,  H01L23/49579 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/072 ,  H01L29/1608 ,  H01L2224/02166 ,  H01L2224/0382 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/29101 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/73265 ,  H01L2924/10272 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A plurality of semiconductor devices provided on a silicon carbide substrate are provided with electrode layers, respectively. The silicon carbide substrate is cut at a region of an exposed surface of the silicon carbide substrate that separates the electrode layers to individually separate the semiconductor devices. A stress relaxation resin is applied to each individually separated semiconductor device to cover the exposed surface at a peripheral end portion of that surface of the semiconductor device which has the electrode layer thereon. A semiconductor apparatus can thus be obtained that also allows a semiconductor device with a silicon carbide or similar compound semiconductor substrate to adhere to a sealant resin via large adhesive strength and thus allows the sealant resin to be less crackable, less peelable and the like by thermal stress caused in operation.

摘要翻译： 设置在碳化硅衬底上的多个半导体器件分别设置有电极层。 在碳化硅衬底的暴露表面的区域处切割碳化硅衬底，其分离电极层以单独地分离半导体器件。 应力松弛树脂被施加到每个单独分离的半导体器件以覆盖其上具有电极层的半导体器件的该表面的外周端部处的暴露表面。 因此，可以获得半导体装置，其也允许具有碳化硅或类似化合物半导体衬底的半导体器件通过大的粘合强度粘附到密封剂树脂，并且因此允许密封剂树脂通过热可靠性更小，可剥离性更差 操作引起的压力。

公开(公告)号：US20110221077A1

公开(公告)日：2011-09-15

申请号：US12867670

申请日：2009-02-20

申请人： Takeo Ishibashi ,  Miwako Ishibashi ,  Mamoru Terai ,  Takuya Hagiwara ,  Osamu Yokokoji ,  Yoko Takebe

发明人： Takeo Ishibashi ,  Miwako Ishibashi ,  Mamoru Terai ,  Takuya Hagiwara ,  Osamu Yokokoji ,  Yoko Takebe

IPC分类号： H01L23/00 ,  C09D5/00 ,  G03F7/20

CPC分类号： G03F7/16 ,  G03F7/11 ,  G03F7/2041

摘要： It is an object of the present invention to provide a water repellant composition for a substrate to be exposed which inhibits the back side of a substrate to be exposed from being contaminated by an immersion liquid, can improve adhesion between a film to be processed and an organic film directly overlying that film to inhibit film peeling, and has excellent workability, a method for forming a resist pattern, an electronic device produced by the formation method, a treatment method for imparting water repellency to a substrate to be exposed, a water repellent set for a substrate to be exposed, and a treatment method for imparting water repellency to a substrate to be exposed using the same. A water repellent composition for a substrate to be exposed including at least an organosilicon compound represented by the following general formula (1) and a solvent is used. In the formula, R1 is a monovalent organic group having 14 to 30 carbon atoms, each R2, R3, and R4 is independently a monovalent organic group or a hydrolyzable group having 1 to 10 carbon atoms, and at least one of R2, R3, and R4 is a hydrolyzable group.

摘要翻译： 本发明的目的是提供一种抑制待暴露基板的背面被浸没液体污染的待曝光基材的防水组合物，可提高被处理膜与 有机膜直接覆盖该膜以抑制膜剥离，并且具有优异的可加工性，形成抗蚀剂图案的方法，通过形成方法制造的电子器件，对待暴露的基底赋予拒水性的处理方法，防水剂 设置为要暴露的基底，以及用于使用其进行曝光的基底赋予拒水性的处理方法。 使用至少包含由以下通式（1）表示的有机硅化合物和溶剂的待曝光底物用防水组合物。 式中，R1为碳原子数为14〜30的一价有机基团，R2，R3，R4分别独立为1价有机基团或碳原子数1〜10的可水解基团，R2，R3， R4是可水解基团。

公开(公告)号：US20080241489A1

公开(公告)日：2008-10-02

申请号：US12078098

申请日：2008-03-27

申请人： Takeo Ishibashi ,  Mamoru Terai ,  Takuya Hagiwara ,  Atsumi Yamaguchi

发明人： Takeo Ishibashi ,  Mamoru Terai ,  Takuya Hagiwara ,  Atsumi Yamaguchi

IPC分类号： H01L23/00 ,  B32B3/00 ,  G03F7/207

CPC分类号： G03F7/2041 ,  G03F7/11 ,  Y10T428/24835

摘要： A method of forming a resist pattern through liquid immersion exposure in which exposure is performed such that a liquid film is formed between a substrate for a semiconductor device on which a processed film is formed and an objective lens arranged above the substrate is provided, and the substrate treated with a water-repellent agent solution composed of at least a water-repellent agent and a solvent is exposed to light.

摘要翻译： 提供了一种通过液浸曝光形成抗蚀剂图案的方法，其中进行曝光，使得在其上形成有处理膜的半导体器件的基板和布置在基板上方的物镜之间形成液膜，并且 用至少由拒水剂和溶剂组成的拒水剂溶液处理的基材曝光。

公开(公告)号：US20070128559A1

公开(公告)日：2007-06-07

申请号：US11561168

申请日：2006-11-17

申请人： Takeo ISHIBASHI ,  Tetsuro Hanawa ,  Mamoru Terai ,  Teruhiko Kumada

发明人： Takeo ISHIBASHI ,  Tetsuro Hanawa ,  Mamoru Terai ,  Teruhiko Kumada

IPC分类号： G03F7/00

CPC分类号： G03F7/40

摘要： A raw material of a cover layer as a material for forming a fine pattern is applied as to cover a resist pattern. Then, a component in the cover layer permeates into the resist pattern. Thereby, a mixed layer having a lower softening point than that of the resist pattern is formed. Then, a heat treatment is performed at a temperature lower than the softening point of the resist pattern and higher than that of the mixed layer. Thereby, the mixed layer is softened and a width of the mixed layer becomes large. As a result, a space of the resist pattern is narrowed. Therefore, a fine pattern is formed having a smaller size than the size limit due to the exposure wavelength.

摘要翻译： 涂覆作为形成精细图案的材料的覆盖层的原料以覆盖抗蚀剂图案。 然后，覆盖层中的成分渗透到抗蚀剂图案中。 由此，形成软化点低于抗蚀剂图案的混合层。 然后，在低于抗蚀剂图案的软化点的温度下进行热处理，并且高于混合层的温度。 由此，混合层软化，混合层的宽度变大。 结果，抗蚀剂图案的空间变窄。 因此，形成由于曝光波长而具有比尺寸限制小的尺寸的精细图案。

公开(公告)号：US09082707B2

公开(公告)日：2015-07-14

申请号：US13880584

申请日：2011-05-09

申请人： Seiki Hiramatsu ,  Mamoru Terai

发明人： Seiki Hiramatsu ,  Mamoru Terai

IPC分类号： H01L23/29 ,  H01L23/24 ,  H01L23/31 ,  H01L23/00 ,  H01L25/07 ,  H01L21/56 ,  H01L29/16 ,  H01L23/373

CPC分类号： H01L23/29 ,  H01L21/56 ,  H01L23/24 ,  H01L23/293 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/3735 ,  H01L23/562 ,  H01L24/73 ,  H01L25/072 ,  H01L29/1602 ,  H01L29/1608 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor element substrate, wherein an electrode pattern is formed on one surface of an insulating substrate and a back-surface electrode is formed on the other surface of the insulating substrate; a stress-relaxation adhesive layer made of resin that covers at least a part of a portion of the surface of the insulating substrate where the electrode pattern and the back-surface electrode are not formed; and a semiconductor element affixed, using a bonding material, to the surface of the electrode pattern opposite the insulating substrate, and a first sealing resin member which covers the semiconductor element and the semiconductor element substrate, and a modulus of elasticity of the stress-relaxation adhesive layer is lower than that of the first sealing resin member.

摘要翻译： 半导体器件包括半导体元件衬底，其中在绝缘衬底的一个表面上形成电极图案，并且在绝缘衬底的另一个表面上形成背面电极; 由树脂制成的应力松弛粘合剂层​​，其覆盖绝缘基板的未形成电极图案和背面电极的部分表面的至少一部分; 以及半导体元件，使用接合材料固定在与绝缘基板相对的电极图案的表面上，以及覆盖半导体元件和半导体元件基板的第一密封树脂部件和应力松弛的弹性模量 粘合剂层比第一密封树脂构件低。

公开(公告)号：US08679727B2

公开(公告)日：2014-03-25

申请号：US12490934

申请日：2009-06-24

申请人： Mamoru Terai ,  Takuya Hagiwara ,  Miwako Ishibashi

发明人： Mamoru Terai ,  Takuya Hagiwara ,  Takeo Ishibashi

IPC分类号： G03F7/00 ,  G03F7/11 ,  G03F7/20 ,  G03F7/26 ,  G03F7/32

CPC分类号： G03F7/322 ,  G03F7/2041 ,  G03F7/38 ,  G03F7/40 ,  G03F7/42

摘要： A developing method for immersion lithography is provided, realizing a process that is simple and low-cost and enables high repellency sufficient to allow high-speed scanning. The developing method for immersion lithography improved by inexpensive material without introducing any new facility, a solution to be used in the developing method, and an electronic device formed by using the developing method are provided. The developing method for immersion lithography is a method of developing for immersion lithography of an electronic device with a resist containing a surface segregation agent and chemically-amplified resist, including the step of development with alkali immersion, characterized by the dissolving and removing step, conducted using a dissolving and removing solution that selectively dissolves and removes the surface segregation agent of the resist.

摘要翻译： 提供了一种浸没式光刻技术的开发方法，实现了简单且低成本的方法，并且具有足够高的排斥性以允许高速扫描。 提供了通过便宜的材料改进的浸没式光刻的显影方法，而不引入任何新设备，用于显影方法的解决方案以及通过使用显影方法形成的电子设备。 浸渍光刻的显影方法是一种用含有表面偏析剂和化学增幅抗蚀剂的抗蚀剂的电子器件的浸没式光刻技术开发的方法，包括用碱浸渍显影的步骤，其特征在于溶解和除去步骤，进行 使用选择性溶解和除去抗蚀剂的表面分离剂的溶解和去除溶液。

公开(公告)号：US20130240909A1

公开(公告)日：2013-09-19

申请号：US13880584

申请日：2011-05-09

申请人： Seiki Hiramatsu ,  Mamoru Terai

发明人： Seiki Hiramatsu ,  Mamoru Terai

IPC分类号： H01L23/29 ,  H01L21/56 ,  H01L29/16

CPC分类号： H01L23/29 ,  H01L21/56 ,  H01L23/24 ,  H01L23/293 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/3735 ,  H01L23/562 ,  H01L24/73 ,  H01L25/072 ,  H01L29/1602 ,  H01L29/1608 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor element substrate, wherein an electrode pattern is formed on one surface of an insulating substrate and a back-surface electrode is formed on the other surface of the insulating substrate; a stress-relaxation adhesive layer made of resin that covers at least a part of a portion of the surface of the insulating substrate where the electrode pattern and the back-surface electrode are not formed; and a semiconductor element affixed, using a bonding material, to the surface of the electrode pattern opposite the insulating substrate, and a first sealing resin member which covers the semiconductor element and the semiconductor element substrate, and a modulus of elasticity of the stress-relaxation adhesive layer is lower than that of the first sealing resin member.

摘要翻译： 半导体器件包括半导体元件衬底，其中在绝缘衬底的一个表面上形成电极图案，并且在绝缘衬底的另一个表面上形成背面电极; 由树脂制成的应力松弛粘合剂层​​，其覆盖绝缘基板的未形成电极图案和背面电极的部分表面的至少一部分; 以及半导体元件，使用接合材料固定在与绝缘基板相对的电极图案的表面上，以及覆盖半导体元件和半导体元件基板的第一密封树脂部件和应力松弛的弹性模量 粘合剂层比第一密封树脂构件低。