公开(公告)号：US20140015108A1

公开(公告)日：2014-01-16

申请号：US13821007

申请日：2012-03-20

申请人： Sang-Hee Kim ,  Jung-Ha Hwang ,  Young-Kyu Choi ,  Bok-Cheol Sim

发明人： Sang-Hee Kim ,  Jung-Ha Hwang ,  Young-Kyu Choi ,  Bok-Cheol Sim

IPC分类号： H01L29/36 ,  H01L21/02

CPC分类号： H01L29/36 ,  C30B15/20 ,  C30B29/06 ,  H01L21/02002

摘要： A method of manufacturing a single crystal ingot, and a single crystal ingot and a wafer manufactured thereby are provided. The method of manufacturing a single crystal ingot according to an embodiment includes forming a silicon melt in a crucible inside a chamber, preparing a seed crystal on the silicon melt, and growing a single crystal ingot from the silicon melt, and pressure of the chamber may be controlled in a range of 90 Torr to 500 Torr.

摘要翻译： 提供了制造单晶锭的方法，以及由此制造的单晶锭和晶片。 根据实施例的制造单晶锭的方法包括在室内的坩埚中形成硅熔体，在硅熔体上制备晶种，并从硅熔体生长单晶锭，并且室的压力可以 控制在90乇至500乇的范围内。

公开(公告)号：US20120141808A1

公开(公告)日：2012-06-07

申请号：US13328158

申请日：2011-12-16

申请人： Do-Won Song ,  Young-Hun Kim ,  Eun-Sang Ji ,  Young-Kyu Choi ,  Hwa-Jin Jo

发明人： Do-Won Song ,  Young-Hun Kim ,  Eun-Sang Ji ,  Young-Kyu Choi ,  Hwa-Jin Jo

IPC分类号： C01B33/02 ,  B32B9/04 ,  B28D5/00 ,  C30B15/22

CPC分类号： C30B15/305 ,  C30B29/06 ,  C30B30/04 ,  C30B35/00 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1068

摘要： The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip.

摘要翻译： 本发明报道了未报道的缺陷，并公开了缺陷控制硅锭，缺陷控制晶片及其制造方法和装置。 新的缺陷是当由施加强水平磁场的HMCZ（Horizo​​ntal Magnetic Czochralski）方法引起的螺旋位错产生于慢跑螺钉位错时产生的晶体缺陷，并且在冷却晶体的热处理期间传播以形成交叉滑移。 本发明改变了布置在硅熔体上方的加热器和锭之间的上部隔热结构的形状和结构，并且控制了硅单晶锭生长过程的初始条件或操作条件以减少由强的 水平磁场，防止螺丝错位传播到十字滑移。

公开(公告)号：US08194635B2

公开(公告)日：2012-06-05

申请号：US12148964

申请日：2008-04-23

申请人： Sunghyun Choi ,  Kwang-Hun Han ,  Young-Kyu Choi ,  Yong-Hwan Lee

发明人： Sunghyun Choi ,  Kwang-Hun Han ,  Young-Kyu Choi ,  Yong-Hwan Lee

IPC分类号： H04J3/00

CPC分类号： H04W72/1268 ,  H04W52/146 ,  H04W52/228

摘要： An UpLink (UL) scheduling method and apparatus considering a characteristic of a power amplifier in a mobile communication terminal are provided. The UL scheduling method includes calculating a packet transmission time, which minimizes energy consumed in packet transmission, by using a Direct Current (DC) voltage used in a power amplifier for signal amplification and by using nonlinear amplification efficiency; and scheduling UL data by using the calculated packet transmission time.

摘要翻译： 提供了考虑移动通信终端中的功率放大器的特性的UpLink（UL）调度方法和装置。 UL调度方法包括通过使用用于信号放大的功率放大器中使用的直流（DC）电压和通过使用非线性放大效率来计算分组传输中消耗的能量最小化的分组传输时间; 并通过使用所计算的分组传输时间调度UL数据。

公开(公告)号：US20050003318A1

公开(公告)日：2005-01-06

申请号：US10482449

申请日：2002-06-28

申请人： Young-Kyu Choi ,  Ki-Tae Kim

发明人： Young-Kyu Choi ,  Ki-Tae Kim

IPC分类号： A61C7/32 ,  A61C7/00 ,  A61C7/08 ,  A61C3/00

CPC分类号： A61C7/00 ,  A61C7/08 ,  A61C2201/007

摘要： Disclosed is an orthodontic appliance for straightening misaligned teeth. The orthodontic appliance is made of a shape memory polymer, and is formed in a cap-shaped tray capable of covering the maxillary or mandibular teeth. An original shape of the tray-type orthodontic appliance made of the shape memory polymer is identical to that of perfectly aligned teeth obtained after orthodontic treatment, and a temporarily formed shape of the tray-type orthodontic appliance is identical to that of the teeth alignment of a patient before orthodontic treatment. The tray-type orthodontic appliance is restored to the original shape memorized at a temperature above a specified glass transition temperature. The orthodontic appliance can be easily manufactured to perform orthodontic treatment, also providing appealing esthetics, in which the orthodontic appliance can be colored to be identical to a tooth with inexpensive manufacturing cost.

摘要翻译： 公开了用于矫正不对准牙齿的矫正矫正器具。 正畸器具由形状记忆聚合物制成，并形成为能够覆盖上颌或下颌牙齿的帽状托盘。 由形状记忆聚合物制成的托盘型正畸装置的原始形状与正畸治疗后获得的完全排列的牙齿相同，并且托盘型正畸矫治器的暂时形成形状与牙齿矫正器 正畸治疗前的病人。 托盘型正畸器具恢复到在高于指定玻璃化转变温度的温度下记忆的原始形状。 正畸矫治器可以容易地制造以进行正畸治疗，还提供吸引人的美学，其中正畸器具可以着色成与牙齿相同，制造成本低廉。

公开(公告)号：US11457405B2

公开(公告)日：2022-09-27

申请号：US13158788

申请日：2011-06-13

申请人： Dong Geun Lee ,  Young Bae Park ,  Young Kyu Choi ,  Ki Back Kim

发明人： Dong Geun Lee ,  Young Bae Park ,  Young Kyu Choi ,  Ki Back Kim

IPC分类号： H04W52/02 ,  H03G3/30 ,  H04W88/08

摘要： A power control method of a base station in a wireless communication system based on Orthogonal Frequency Division Multiple Access (OFDMA) is provided for reducing power consumption by turning off the bias of the power amplifier for the duration of a symbol carrying no user data. The method includes checking scheduling information of radio resources, detecting a symbol carrying no user data, based on the scheduling information, and turning off a bias of the power amplifier for a symbol duration of the symbol carrying no user data. The transmission power control method is capable of reducing power consumption of the base station by turning off the bias of the power amplifier of the base station for the symbol duration in which no user data is transmitted.

公开(公告)号：US20120094662A1

公开(公告)日：2012-04-19

申请号：US13204015

申请日：2011-08-05

申请人： Young Kyu CHOI ,  Ki Back KIM ,  Han Seok KIM

发明人： Young Kyu CHOI ,  Ki Back KIM ,  Han Seok KIM

IPC分类号： H04W4/00

CPC分类号： H04W24/10 ,  H04W36/0088 ,  H04W48/16

摘要： A Base Station (BS) and method of the BS for controlling a scanning process of a mobile station are provided The method of the base station for controlling a scanning process of a mobile station includes receiving, at the base station, a scan request issued in association with the mobile station, determining whether the mobile station has a scan in progress by referencing a scan record table, transmitting a scan response to the mobile station, and recording a scanning status of the mobile station in the scan record table. The method and base station for controlling the scanning process of a mobile station is advantageous to avoid the collision of scanning processes.

摘要翻译： 提供了用于控制移动台的扫描处理的BS的基站（BS）和方法。用于控制移动台的扫描处理的基站的方法包括：在基站处接收发出的扫描请求 与移动站相关联，通过参考扫描记录表来确定移动站是否具有正在进行的扫描，向移动站发送扫描响应，以及在扫描记录表中记录移动台的扫描状态。 用于控制移动台的扫描处理的方法和基站有利于避免扫描过程的冲突。

公开(公告)号：US08391868B2

公开(公告)日：2013-03-05

申请号：US12386783

申请日：2009-04-23

申请人： Ki-Young Han ,  In-Seok Hwang ,  Byoung-Ha Yi ,  Sung-Hyun Choi ,  Young-Kyu Choi ,  Kwang-Hoon Han ,  Min-Soo Na ,  Dong-Myung Kim

发明人： Ki-Young Han ,  In-Seok Hwang ,  Byoung-Ha Yi ,  Sung-Hyun Choi ,  Young-Kyu Choi ,  Kwang-Hoon Han ,  Min-Soo Na ,  Dong-Myung Kim

IPC分类号： H04W36/00

CPC分类号： H04W36/0061

摘要： An apparatus and method for updating a neighbor list in a mobile communication system are provided. The system includes a Mobile Station (MS), a second Base Station (BS), and a first BS. The MS stores first log information, performs a network entry process with the second BS, and generates and transmits second log information to the second BS. The second BS allocates a bandwidth to the MS, receives the second log information, determines if neighbor list update is required using the second log information and, if the neighbor list update is required, updates a neighbor list and transmits the updated neighbor list information to the previous BS.

公开(公告)号：US08349075B2

公开(公告)日：2013-01-08

申请号：US13328132

申请日：2011-12-16

申请人： Do-Won Song ,  Young-Hun Kim ,  Eun-Sang Ji ,  Young-Kyu Choi ,  Hwa-Jin Jo

发明人： Do-Won Song ,  Young-Hun Kim ,  Eun-Sang Ji ,  Young-Kyu Choi ,  Hwa-Jin Jo

IPC分类号： C30B15/14 ,  C30B11/00 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04 ,  C30B35/00

CPC分类号： C30B15/305 ,  C30B29/06 ,  C30B30/04 ,  C30B35/00 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1068

摘要： The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip.

摘要翻译： 本发明报道了未报道的缺陷，并公开了缺陷控制硅锭，缺陷控制晶片及其制造方法和装置。 新的缺陷是当由施加强水平磁场的HMCZ（Horizo​​ntal Magnetic Czochralski）方法引起的螺旋位错产生于慢跑螺钉位错时产生的晶体缺陷，并且在冷却晶体的热处理期间传播以形成交叉滑移。 本发明改变了布置在硅熔体上方的加热器和锭之间的上部隔热结构的形状和结构，并且控制了硅单晶锭生长过程的初始条件或操作条件以减少由强的 水平磁场，防止螺丝错位传播到十字滑移。

公开(公告)号：US08114215B2

公开(公告)日：2012-02-14

申请号：US12256663

申请日：2008-10-23

申请人： Do-Won Song ,  Young-Hun Kim ,  Eun-Sang Ji ,  Young-Kyu Choi ,  Hwa-Jin Jo

发明人： Do-Won Song ,  Young-Hun Kim ,  Eun-Sang Ji ,  Young-Kyu Choi ,  Hwa-Jin Jo

IPC分类号： C30B15/14 ,  C30B11/00 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04 ,  C30B35/00

CPC分类号： C30B15/305 ,  C30B29/06 ,  C30B30/04 ,  C30B35/00 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1068

摘要： The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip.

摘要翻译： 本发明报道了未报道的缺陷，并公开了缺陷控制硅锭，缺陷控制晶片及其制造方法和装置。 新的缺陷是当由施加强水平磁场的HMCZ（Horizo​​ntal Magnetic Czochralski）方法引起的螺旋位错产生于慢跑螺钉位错时产生的晶体缺陷，并且在冷却晶体的热处理期间传播以形成交叉滑移。 本发明改变了布置在硅熔体上方的加热器和锭之间的上部隔热结构的形状和结构，并且控制了硅单晶锭生长过程的初始条件或操作条件以减少由强的 水平磁场，防止螺丝错位传播到十字滑移。

公开(公告)号：US20090169460A1

公开(公告)日：2009-07-02

申请号：US12256663

申请日：2008-10-23

申请人： Do-Won Song ,  Young-Hun Kim ,  Eun-Sang Ji ,  Young-Kyu Choi ,  Hwa-Jin Jo

发明人： Do-Won Song ,  Young-Hun Kim ,  Eun-Sang Ji ,  Young-Kyu Choi ,  Hwa-Jin Jo

IPC分类号： C30B15/06 ,  C01B33/02

CPC分类号： C30B15/305 ,  C30B29/06 ,  C30B30/04 ,  C30B35/00 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1068

摘要： The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip.

摘要翻译： 本发明报道了未报道的缺陷，并公开了缺陷控制硅锭，缺陷控制晶片及其制造方法和装置。 新的缺陷是当由施加强水平磁场的HMCZ（Horizo​​ntal Magnetic Czochralski）方法引起的螺旋位错产生于慢跑螺钉位错时产生的晶体缺陷，并且在冷却晶体的热处理期间传播以形成交叉滑移。 本发明改变了布置在硅熔体上方的加热器和锭之间的上部隔热结构的形状和结构，并且控制了硅单晶锭生长过程的初始条件或操作条件以减少由强的 水平磁场，防止螺丝错位传播到十字滑移。