Process for Preparing Barium Titanate
    1.
    发明申请
    Process for Preparing Barium Titanate 失效
    制备钛酸钡的方法

    公开(公告)号:US20090202425A1

    公开(公告)日:2009-08-13

    申请号:US11989856

    申请日:2006-08-01

    IPC分类号: C01G23/00

    摘要: The present invention relates to a hydrothermal synthesis for preparing barium titanate powder as the essential material for a multi-layer ceramic capacitor. The object of the invention is to prepare barium titanate powder having high purity, particle size of submicron order, uniform particle distribution and excellent crys tallinity , by reacting hydrous titanic acid compound prepared via sulfuric acid process with crystalline titanium oxide and barium hydroxide, as the starting material, at a temperature between 60° C. and 300° C. under a pressure between 5 Kgf/cm2 and 50 Kgf/cm2. The process for preparing barium titanate according to the present invention provides barium titanate powder having Ba/Ti molar ratio of 1.000±0.002 and high purity by applying calcination under reductive condition to the solid product obtained from hydrous titanic acid compound prepared via sulfuric acid process with crystalline titanium oxide and barium hydroxide, as the starting substances, to convert barium sulfate, which was produced from residual sulfide in the raw material, to barium titanate.

    摘要翻译: 本发明涉及一种制备钛酸钡粉末作为多层陶瓷电容器的基本材料的水热合成方法。 本发明的目的是通过使通过硫酸方法制备的含水钛酸化合物与结晶二氧化钛和氢氧化钡反应,制备具有高纯度,亚微米级数,粒子分布均匀和优异的结晶度的钛酸钡粉末,作为 起始材料,温度为60℃至300℃,压力为5Kgf / cm2至50Kgf / cm2。 根据本发明的制备钛酸钡的方法通过在还原条件下对从通过硫酸方法制备的含水钛酸化合物获得的固体产物进行煅烧,提供具有1.000±0.002的Ba / Ti摩尔比的钛酸钡粉末和高纯度, 结晶二氧化钛和氢氧化钡作为起始物质,将由原料中的残留硫化物生成的硫酸钡转化为钛酸钡。

    BiDMOS semiconductor device and method of fabricating the same
    2.
    发明授权
    BiDMOS semiconductor device and method of fabricating the same 失效
    BiDMOS半导体器件及其制造方法

    公开(公告)号:US5882966A

    公开(公告)日:1999-03-16

    申请号:US721093

    申请日:1996-09-27

    申请人: Young-Soo Jang

    发明人: Young-Soo Jang

    CPC分类号: H01L27/0623 H01L21/8249

    摘要: A BiDMOS device in which a bipolar transistor and a DMOS transistor are formed on the same substrate, thereby resulting in a high degree of integration, and a method of fabricating the same using a reduced number of process steps. A high voltage operating characteristic is achieved because the gate of the DMOS transistor isolates the base and collector of the bipolar transistor. In addition, the junction capacitance between the bipolar base and collector regions is considerably reduced due to the isolation provided by the DMOS gate polysilicon.

    摘要翻译: 在同一衬底上形成双极晶体管和DMOS晶体管的BiDMOS器件,从而导致高集成度,以及使用减少数量的工艺步骤制造该BiDMOS器件的方法。 由于DMOS晶体管的栅极隔离双极型晶体管的基极和集电极,因此实现了高电压工作特性。 此外,由于DMOS栅极多晶硅提供的隔离,双极基极和集电极区域之间的结电容显着降低。

    Method and apparatus for encoding/decoding data, and method and apparatus for recording/reproducing data
    3.
    发明授权
    Method and apparatus for encoding/decoding data, and method and apparatus for recording/reproducing data 有权
    用于对数据进行编码/解码的方法和装置,以及用于记录/再现数据的方法和装置

    公开(公告)号:US08130606B2

    公开(公告)日:2012-03-06

    申请号:US11907656

    申请日:2007-10-16

    IPC分类号: G11B20/10

    CPC分类号: G11B20/1833 G11B7/0065

    摘要: A method and apparatus for stably encoding/decoding data, and a method and apparatus for recording/reproducing data are disclosed. The method inserts decoding information into a data section including several predetermined-bit data, determines encoding values of the data according to a transition state of the data and a value of corresponding data, and generates the decoding information and the determined encoding values in units of the data section.

    摘要翻译: 公开了用于数据的稳定编码/解码的方法和装置,以及用于记录/再现数据的方法和装置。 该方法将解码信息插入到包括若干预定位数据的数据部分中,根据数据的转换状态和相应数据的值确定数据的编码值,并生成解码信息和确定的编码值,单位为 数据部分。

    MONOBLOCK DIELECTRIC MULTIPLEXER CAPABLE OF PROCESSING MULTI-BAND SIGNALS
    4.
    发明申请
    MONOBLOCK DIELECTRIC MULTIPLEXER CAPABLE OF PROCESSING MULTI-BAND SIGNALS 有权
    能够处理多条信号的单脉冲电介质多路复用器

    公开(公告)号:US20100231324A1

    公开(公告)日:2010-09-16

    申请号:US12561727

    申请日:2009-09-17

    IPC分类号: H01P5/12

    CPC分类号: H01P1/2136 H01P1/2056

    摘要: Disclosed herein is a monoblock dielectric multiplexer capable of processing multi-band signals. The monoblock dielectric multiplexer includes a dielectric block implemented as a hexahedral dielectric forming a body of the monoblock dielectric multiplexer. An external electrode is applied to an external surface of the dielectric block except for to a top surface. Resonant holes are each formed in a cylindrical shape and formed through the top surface and a bottom surface of the dielectric block. Internal electrodes are respectively formed on inner walls of the resonant holes. A plurality of capacitance patterns is formed on the top surface of the dielectric block and is configured to surround corresponding resonant holes. Input/output electrode units are formed and spaced apart from the capacitance patterns and configured to form capacitance coupling to the capacitance patterns. A collation antenna stage is formed in a center portion of the dielectric block.

    摘要翻译: 这里公开了能够处理多频带信号的单块介质多路复用器。 单块介质多路复用器包括实现为形成单块介质多路复用器的主体的六面体电介质的介质块。 将外部电极施加到介电块的外表面,除了顶表面。 谐振孔各自形成为圆柱形并通过介电块的顶表面和底表面形成。 内部电极分别形成在谐振孔的内壁上。 多个电容图案形成在介质块的顶表面上并被构造成围绕相应的共振孔。 输入/输出电极单元形成并与电容图案间隔开并且被配置成形成耦合到电容图案的电容。 在介质块的中心部分形成核对天线台。

    SYSTEM AND METHOD FOR ALLOWING MULTIPLE RFID READER DEVICES TO READ RFID TAGS WITHOUT COLLISION
    5.
    发明申请
    SYSTEM AND METHOD FOR ALLOWING MULTIPLE RFID READER DEVICES TO READ RFID TAGS WITHOUT COLLISION 有权
    允许多个RFID读取器设备读取RFID标签而不具有冲突的系统和方法

    公开(公告)号:US20100201494A1

    公开(公告)日:2010-08-12

    申请号:US12678488

    申请日:2008-09-12

    IPC分类号: H04Q5/22

    摘要: Provided are an RFID operating system and an RFID system operating method for allowing multiple RFID readers to read tags without collision. The RFID system operating method includes the steps of grouping RFID readers spaced apart by more than a spacing distance capable of avoiding collision between RFID readers into a single group to determine at least one group, classifying RPM readers included in each group into at least one sub-group based on a read time of each RFID reader, and driving the RFID readers such that RPM readers belonging to at least two different sub-groups that do not collide with each other simultaneously operate. According to the present invention, switching is performed sub-group by sub-group to reduce the number of switching operations and sub-groups can simultaneously operate to decrease a read time.

    摘要翻译: 提供了一种RFID操作系统和RFID系统操作方法,用于允许多个RFID读取器在没有碰撞的情况下读取标签。 RFID系统操作方法包括以下步骤:将RFID读取器分组多于间隔距离,以便能够避免RFID读取器之间的冲突到单个组中,以确定至少一个组,将包括在每个组中的RPM读取器分类成至少一个子 - 基于每个RFID读取器的读取时间,以及驱动RFID读取器,使得属于至少两个不相互冲突的不同子组的RPM读取器同时操作。 根据本发明,通过子组进行子组切换以减少切换操作的数量,并且子组可以同时操作以减少读取时间。

    PHOTOGRAPHING CONTROL METHOD AND APPARATUS ACCORDING TO MOTION OF DIGITAL PHOTOGRAPHING APPARATUS
    6.
    发明申请
    PHOTOGRAPHING CONTROL METHOD AND APPARATUS ACCORDING TO MOTION OF DIGITAL PHOTOGRAPHING APPARATUS 有权
    摄影控制方法和数码摄影机的运动设备

    公开(公告)号:US20100149353A1

    公开(公告)日:2010-06-17

    申请号:US12633912

    申请日:2009-12-09

    IPC分类号: H04N5/228 H04N5/262

    CPC分类号: H04N5/23296 H04N5/23248

    摘要: Provided are a photographing control method and apparatus according to motion of a digital photographing apparatus. The photographing control method may prevent inconvenience when a subject is photographed while changing a viewing angle by using an additional zoom button, by sensing predetermined motion via a motion sensor comprised in the digital photographing apparatus and calculating a first motion value; comparing the calculated first motion value to predetermined threshold values; and controlling a zoom lens to be driven in a predetermined direction according to a result of the comparing.

    摘要翻译: 提供了根据数字摄影装置的运动的拍摄控制方法和装置。 拍摄控制方法可以通过使用附加变焦按钮改变视角,通过经由包括在数字摄影装置中的运动传感器感测预定的运动并计算第一运动值来防止拍摄对象的不便; 将所计算的第一运动值与预定阈值进行比较; 以及根据比较的结果控制要在预定方向上驱动的变焦镜头。

    Method and apparatus for encoding/decoding data, and method and apparatus for recording/reproducing data
    7.
    发明申请
    Method and apparatus for encoding/decoding data, and method and apparatus for recording/reproducing data 有权
    用于对数据进行编码/解码的方法和装置,以及用于记录/再现数据的方法和装置

    公开(公告)号:US20080089206A1

    公开(公告)日:2008-04-17

    申请号:US11907656

    申请日:2007-10-16

    IPC分类号: G11B7/00

    CPC分类号: G11B20/1833 G11B7/0065

    摘要: A method and apparatus for stably encoding/decoding data, and a method and apparatus for recording/reproducing data are disclosed. The method inserts decoding information into a data section including several predetermined-bit data, determines encoding values of the data according to a transition state of the data and a value of corresponding data, and generates the decoding information and the determined encoding values in units of the data section.

    摘要翻译: 公开了用于数据的稳定编码/解码的方法和装置,以及用于记录/再现数据的方法和装置。 该方法将解码信息插入到包括若干预定位数据的数据部分中,根据数据的转换状态和相应数据的值确定数据的编码值,并生成解码信息和确定的编码值,单位为 数据部分。

    Method of forming BiCMOS devices having mosfet and bipolar sections
therein
    8.
    发明授权
    Method of forming BiCMOS devices having mosfet and bipolar sections therein 失效
    在其中形成具有mosfet和双极部分的BiCMOS器件的方法

    公开(公告)号:US5804476A

    公开(公告)日:1998-09-08

    申请号:US758848

    申请日:1996-12-02

    申请人: Young-Soo Jang

    发明人: Young-Soo Jang

    摘要: A BiCMOS device and a manufacturing method thereof according to the present invention has a gate insulating layer of NMOSFET having non-uniform thickness. The thickness of the end portion of the gate insulating layer, which is near LDD regions, is thicker than that of center portion. Therefore, the GIDL and the gate-drain overlap capacitance is reduced. In addition, in case of the bipolar transistor of the BiCMOS device, there exists a portion of an oxide film below the side portion of the emitter polysilicon and over the side portions of the emitter region. Since this structure serves as a gate of field effect transistor, N- channel is produced in the emitter region when the emitter-base junction is reversely biased and thus the hot carrier reliability is improved.

    摘要翻译: 根据本发明的BiCMOS器件及其制造方法具有不均匀厚度的NMOSFET栅极绝缘层。 靠近LDD区域的栅极绝缘层的端部的厚度比中心部的厚度厚。 因此,GIDL和栅 - 漏重叠电容减小。 此外,在BiCMOS器件的双极晶体管的情况下,在发射极多晶硅的侧部和发射极区的侧部之上存在氧化膜的一部分。 由于该结构用作场效应晶体管的栅极,当发射极 - 基极结反向偏置时,在发射极区域中产生N沟道,因此提高了热载流子的可靠性。

    Methods of forming BiCMOS semiconductor devices
    9.
    发明授权
    Methods of forming BiCMOS semiconductor devices 失效
    形成BiCMOS半导体器件的方法

    公开(公告)号:US5643810A

    公开(公告)日:1997-07-01

    申请号:US688998

    申请日:1996-08-01

    申请人: Young-Soo Jang

    发明人: Young-Soo Jang

    摘要: Methods of forming BiCMOS semiconductor devices include steps for forming bird's beak shaped oxide extensions between the gate electrodes and drain and source regions of CMOS devices to inhibit drain leakage currents and reduce gate-to-drain capacitance. These methods also include steps for forming bird's beak shaped oxide extensions at the emitter-base junctions of BJTs to reduce hot carrier induced P-N junction breakdown. A preferred method includes the steps of forming a gate electrode of a field effect transistor on a face of a semiconductor substrate and then forming self-aligned source and drain regions in the substrate using the gate electrode as a mask. A first conductive layer is then formed on the source and drain regions and used to diffuse dopants into the source and drain regions to increase the conductivity therein. Simultaneously with this diffusion step, the ends of the gate electrode and the first conductive layer are oxidized to form first bird's beak shaped oxide extensions between the gate electrode and the source and drain regions. These first bird's beak shaped oxide extensions are preferably formed to reduce drain leakage currents and gate-to-source capacitance by, among other things, reducing the electric field between the drain-side end of the gate electrode and the drain region. The first conductive layer can also be etched back into discrete intermediate source and drain contact regions to facilitate the subsequent formation of source and drain electrodes in electrical contact with the source and drain regions. Similar steps can also be performed to simultaneously form bipolar junction transistors adjacent the field effect transistors.

    摘要翻译: 形成BiCMOS半导体器件的方法包括在CMOS器件的栅极电极和漏极和源极区域之间形成鸟嘴形氧化物延伸的步骤,以抑制漏极漏电流并降低栅极 - 漏极电容。 这些方法还包括在BJT的发射极 - 基极结处形成鸟喙状氧化物延伸的步骤,以减少热载体诱导的P-N结击穿。 优选的方法包括以下步骤:在半导体衬底的表面上形成场效应晶体管的栅极,然后使用栅电极作为掩模在衬底中形成自对准的源区和漏区。 然后在源极和漏极区域上形成第一导电层,并且用于将掺杂剂扩散到源极和漏极区域中以增加其中的导电性。 与该扩散步骤同时,栅电极和第一导电层的端部被氧化,以在栅电极和源漏区之间形成第一鸟喙形氧化物延伸。 这些第一鸟喙形氧化物延伸部优选地被形成为通过减少栅极电极和漏极区域的漏极侧端部之间的电场来减少漏极漏电流和栅极至源极电容。 第一导电层还可以被回蚀刻成离散的中间源极和漏极接触区域,以便随后形成与源极和漏极区域电接触的源极和漏极。 也可以执行类似的步骤以同时形成与场效应晶体管相邻的双极结型晶体管。

    Digtal photographing apparatus and method of controlling the same
    10.
    发明授权
    Digtal photographing apparatus and method of controlling the same 有权
    数字摄影装置及其控制方法

    公开(公告)号:US08654204B2

    公开(公告)日:2014-02-18

    申请号:US12948955

    申请日:2010-11-18

    申请人: Young-soo Jang

    发明人: Young-soo Jang

    IPC分类号: H04N5/228 H04N5/225

    摘要: A digital photographing apparatus includes a handshake correction module and a method of controlling the digital photographing apparatus. As a first image and a second image that is input by minutely adjusting a photographing direction from the first image are captured by using a pre-mounted handshake correction module, the second image that is accurately continuous from the first image may be obtained. As such, highly reliable panorama shooting may be enabled and an ultra-wide-angle image having a viewing angle greater than that of a currently mounted lens may be obtained without exchanging the currently mounted lens for an expensive lens used in wide-angle shooting.

    摘要翻译: 数字拍摄装置包括握手校正模块和控制数字拍摄装置的方法。 通过使用预先安装的握手校正模块来捕获通过微调第一图像的拍摄方向而输入的第一图像和第二图像,可以获得从第一图像精确连续的第二图像。 因此,可以实现高度可靠的全景拍摄,并且可以获得具有大于当前安装的透镜的视角的超广角图像,而不需要将用于广角拍摄的昂贵透镜的当前安装的透镜更换。