公开(公告)号：US20100330794A1

公开(公告)日：2010-12-30

申请号：US12819675

申请日：2010-06-21

申请人： Hirokazu KURISU ,  Yutaka Takeshima ,  Itaru Kanno ,  Masahiko Higashi ,  Yusaku Hirota

发明人： Hirokazu KURISU ,  Yutaka Takeshima ,  Itaru Kanno ,  Masahiko Higashi ,  Yusaku Hirota

IPC分类号： H01L21/28 ,  H01L21/306

CPC分类号： H01L21/02063 ,  H01L21/28518 ,  H01L21/76831 ,  H01L21/76895

摘要： There is provided a method for cleaning a semiconductor device capable of making compatible the inhibition of dissolution of a gate metal material and the acquisition of a favorable contact resistance. A method for cleaning a semiconductor device includes steps: a semiconductor substrate including silicon, and having a main surface is prepared; a multilayer gate including a metal layer and a silicon layer stacked sequentially from the bottom is formed over the main surface; a silicide layer is formed over the main surface and the silicon layer surface; an insulation layer is formed over the silicide layer in each of the main surface and the multilayer gate surface; a shared contact hole is formed in the insulation layer in such a manner that the silicide layer in the main surface of the semiconductor substrate and the surface of the multilayer gate is exposed from the insulation layer; and the shared contact hole is subjected to sulfuric acid cleaning, aqueous hydrogen peroxide cleaning, and APM cleaning separately, respectively, thereby to remove an altered layer formed in the shared contact hole.

摘要翻译： 提供了一种能够使与栅极金属材料的溶解的抑制兼容并且获得良好的接触电阻的半导体器件的清洁方法。 一种清洗半导体器件的方法，包括步骤：制备包括硅并具有主表面的半导体衬底; 在主表面上形成包括从底部依次堆叠的金属层和硅层的多层栅极; 在主表面和硅层表面上形成硅化物层; 在主表面和多层栅极表面中的每一个中的硅化物层上形成绝缘层; 在绝缘层中形成共享接触孔，使得半导体衬底的主表面中的硅化物层和多层栅极的表面从绝缘层露出; 分别对共用接触孔进行硫酸清洗，过氧化氢水清洗和APM清洗，从而除去形成在共用接触孔中的变化层。

公开(公告)号：US20070141849A1

公开(公告)日：2007-06-21

申请号：US10591474

申请日：2005-03-09

申请人： Itaru Kanno ,  Yusaku Hirota ,  Kenji Sekiguchi ,  Hiroshi Nagayasu ,  Shouichi Shimose

发明人： Itaru Kanno ,  Yusaku Hirota ,  Kenji Sekiguchi ,  Hiroshi Nagayasu ,  Shouichi Shimose

IPC分类号： B08B3/00 ,  B41J2/05 ,  H01L21/302

CPC分类号： H01L21/67051 ,  B01F3/04049 ,  B05B7/0433 ,  B08B3/02 ,  Y10S134/902

摘要： An object of the present is to uniform particle diameters and speeds of liquid droplets in a two-fluid nozzle for cleaning substrates which mixes gas and liquid internally and injects liquid droplets with gas so as to clean a substrate. The two-fluid nozzle for cleaning substrates has a gas supply passage for supplying gas, a liquid supply passage for supplying liquid, and a lead-out passage for leading out internally-formed liquid droplets, wherein an injection port for injecting liquid droplets to the outside is formed at the front end of the lead-out passage, and wherein a cross-sectional area Sb of the injection port is formed smaller than a cross-sectional area Sa of the lead-out passage, and a cross sectional area Sc of an exit of the gas supply passage is formed smaller than the cross-sectional area Sa of the lead-out passage.

摘要翻译： 本发明的目的是在二流体喷嘴中用于清洁衬底的液滴的均匀的粒子直径和速度，这些衬底在内部混合气体和液体，并且用气体注入液滴以便清洁衬底。 用于清洁基板的双流体喷嘴具有用于供应气体的气体供应通道，用于供应液体的液体供应通道和用于引出内部形成的液滴的引出通道，其中用于将液滴注入到喷嘴 外部形成在引出通道的前端，并且其中注入口的横截面面积Sb形成为小于引出通道的横截面积Sa，横截面面积Sc 气体供给通道的出口形成为小于引出通道的横截面面积Sa。

公开(公告)号：US08037891B2

公开(公告)日：2011-10-18

申请号：US10591474

申请日：2005-03-09

申请人： Itaru Kanno ,  Yusaku Hirota ,  Kenji Sekiguchi ,  Hiroshi Nagayasu ,  Shouichi Shimose

发明人： Itaru Kanno ,  Yusaku Hirota ,  Kenji Sekiguchi ,  Hiroshi Nagayasu ,  Shouichi Shimose

IPC分类号： B08B3/04

CPC分类号： H01L21/67051 ,  B01F3/04049 ,  B05B7/0433 ,  B08B3/02 ,  Y10S134/902

摘要： An object of the present is to uniform particle diameters and speeds of liquid droplets in a two-fluid nozzle for cleaning substrates which mixes gas and liquid internally and injects liquid droplets with gas so as to clean a substrate. The two-fluid nozzle for cleaning substrates has a gas supply passage for supplying gas, a liquid supply passage for supplying liquid, and a lead-out passage for leading out internally-formed liquid droplets, wherein an injection port for injecting liquid droplets to the outside is formed at the front end of the lead-out passage, and wherein a cross-sectional area Sb of the injection port is formed smaller than a cross-sectional area Sa of the lead-out passage, and a cross sectional area Sc of an exit of the gas supply passage is formed smaller than the cross-sectional area Sa of the lead-out passage.

摘要翻译： 本发明的目的是在二流体喷嘴中用于清洁衬底的液滴的均匀的粒子直径和速度，这些衬底在内部混合气体和液体，并且用气体注入液滴以便清洁衬底。 用于清洁基板的双流体喷嘴具有用于供应气体的气体供应通道，用于供应液体的液体供应通道和用于引出内部形成的液滴的引出通道，其中用于将液滴注入到喷嘴 外部形成在引出通道的前端，并且其中注入口的横截面面积Sb形成为小于引出通道的横截面积Sa，横截面面积Sc 气体供给通道的出口形成为小于引出通道的横截面面积Sa。

公开(公告)号：US20090137118A1

公开(公告)日：2009-05-28

申请号：US12248450

申请日：2008-10-09

申请人： Yusaku Hirota ,  Itaru Kanno

发明人： Yusaku Hirota ,  Itaru Kanno

IPC分类号： H01L21/306 ,  H01L21/768

CPC分类号： H01L21/02063 ,  H01L21/67086 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76832 ,  H01L21/76834

摘要： Initially, an interconnection 5w that contains copper is formed on a semiconductor substrate 1 (step (A)). On the interconnection 5w, an etching stopper film 6es is formed (step (B)). On the etching stopper film 6es, an insulating layer 6 is formed (step (C)). In the insulating layer 6, a via hole 6v that reaches the etching stopper film 6es is formed (step (D)). A surface of each of via hole 6v and the insulating layer 6 is cleaned with an organic solvent C (step (E)). The etching stopper film 6es is removed such that the interconnection 5w is exposed (step (F)). An interconnection 6w that electrically connects to the exposed interconnection 5w is further formed (step (G)). It is thereby possible to obtain a method of manufacturing a semiconductor device, including a cleaning step that can suppress corrosion of an interconnection that contains copper.

摘要翻译： 首先，在半导体基板1上形成包含铜的布线5w（步骤（A））。 在互连件5w上形成蚀刻停止膜6es（步骤（B））。 在蚀刻停止膜6es上形成绝缘层6（步骤（C））。 在绝缘层6中，形成到达蚀刻停止膜6es的通孔6v（步骤（D））。 通孔6v和绝缘层6的表面用有机溶剂C清洗（步骤（E））。 去除蚀刻停止膜6es，使得互连5w露出（步骤（F））。 进一步形成与露出的布线5w电连接的布线6w（步骤（G））。 从而可以获得一种制造半导体器件的方法，包括可以抑制含有铜的互连的腐蚀的清洗步骤。

公开(公告)号：US20090014028A1

公开(公告)日：2009-01-15

申请号：US12170823

申请日：2008-07-10

申请人： Yusaku Hirota ,  Itaru Kanno ,  Hiroshi Morita ,  Junichi Ida

发明人： Yusaku Hirota ,  Itaru Kanno ,  Hiroshi Morita ,  Junichi Ida

IPC分类号： B08B3/10 ,  B08B3/12 ,  B08B3/08

CPC分类号： H01L21/67086 ,  H01L21/6708

摘要： There is provided a method of efficiently cleaning substrates without damaging a fine pattern formed thereon. It is a method of cleaning one or more substrates in a system processing one or more substrates as one batch by dipping one or more substrates as one batch, including the steps of: immersing one or more substrates as one batch in a wet etching solution; ultrasonically cleaning one or more substrates as one batch; and drying one or more substrates as one batch. The step of ultrasonically cleaning employs a cleaning solution having a gas dissolved therein to have a degree of saturation of 60% to 100% at an atmospheric pressure, and an ultrasonic wave having a frequency of at least 500 kHz and an energy of 0.02 W/cm2 to 0.5 W/cm2.

摘要翻译： 提供了一种有效地清洁基板而不损害其上形成的精细图案的方法。 它是通过一次浸渍一个或多个基材来清洗一个或多个基材作为一个批次的系统中的一个或多个基材的方法，包括以下步骤：将一个或多个基材作为一批在一个湿蚀刻溶液中浸渍; 超声波清洗一个或多个基材作为一批; 并将一个或多个基材作为一批干燥。 超声波清洗的步骤使用溶解有气体的清洗液在大气压下具有60〜100％的饱和度，超声波的频率至少为500kHz，能量为0.02W / cm2〜0.5W / cm 2。

公开(公告)号：US20110298097A1

公开(公告)日：2011-12-08

申请号：US13156021

申请日：2011-06-08

申请人： Manabu Sueyoshi ,  Seiji Muranaka ,  Tomoryo Shono ,  Itaru Kanno

发明人： Manabu Sueyoshi ,  Seiji Muranaka ,  Tomoryo Shono ,  Itaru Kanno

IPC分类号： H01L29/41 ,  H01L21/283

CPC分类号： H01L25/0657 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0652 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05017 ,  H01L2224/05554 ,  H01L2224/0557 ,  H01L2224/056 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48229 ,  H01L2224/73204 ,  H01L2224/73215 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/83005 ,  H01L2224/9202 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2225/06558 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10162 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00011 ,  H01L2224/05552 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is provided wherein stacked semiconductor substrates are electrically coupled together in a satisfactory state by a conductor buried in the interior of a through hole. A first semiconductor substrate includes a substrate having main surfaces, further includes a semiconductor element formed within and over the substrate, a wiring coupled to the semiconductor element electrically, and a conductive layer formed in the interior of a through hole, the through hole extending through mutually confronting first and second main surfaces as the main surfaces of the substrate and reaching the wiring. The first semiconductor substrate and a second semiconductor substrate are stacked and the conductive layer is coupled to a wiring of the second semiconductor substrate electrically. In a second main surface of the conductive layer, a recess is formed around an end portion of the through hole so that a bottom wall surface of the recess is present in the interior of the substrate. A conductive material which constitutes the conductive layer is filled in the interior of the recess.

摘要翻译： 提供一种半导体器件，其中堆叠的半导体衬底通过埋在通孔内部的导体在令人满意的状态下电耦合在一起。 第一半导体衬底包括具有主表面的衬底，还包括形成在衬底内和上面的半导体元件，电连接到半导体元件的布线，以及形成在通孔内部的导电层，所述通孔延伸穿过 相互面对的第一和第二主表面作为基板的主表面并到达布线。 层叠第一半导体衬底和第二半导体衬底，并且导电层电连接到第二半导体衬底的布线。 在导电层的第二主表面中，在通孔的端部周围形成凹部，使得凹部的底壁表面存在于基板的内部。 构成导电层的导电材料填充在凹部的内部。

公开(公告)号：US20070099406A1

公开(公告)日：2007-05-03

申请号：US11551861

申请日：2006-10-23

申请人： Masahiko Higashi ,  Satoshi Kume ,  Jiro Yugami ,  Shinichi Yamanari ,  Takahiro Maruyama ,  Itaru Kanno

发明人： Masahiko Higashi ,  Satoshi Kume ,  Jiro Yugami ,  Shinichi Yamanari ,  Takahiro Maruyama ,  Itaru Kanno

IPC分类号： H01L21/3205 ,  H01L21/4763 ,  H01L21/336

CPC分类号： H01L21/32134 ,  H01L21/28079 ,  H01L21/823842 ,  H01L21/82385 ,  H01L29/4958

摘要： In a semiconductor device manufacturing method of the invention, a metal film, for forming a gate electrode, is formed on a gate insulating film. Subsequently, when the metal film is processed, part of the metal film is removed by a wet etching process using a given chemical liquid.

摘要翻译： 在本发明的半导体器件制造方法中，在栅极绝缘膜上形成用于形成栅电极的金属膜。 随后，当处理金属膜时，通过使用给定的化学液体的湿蚀刻工艺去除部分金属膜。

公开(公告)号：US06199567B1

公开(公告)日：2001-03-13

申请号：US08772632

申请日：1996-12-23

申请人： Itaru Kanno ,  Tetsuo Aoyama ,  Mayumi Hada

发明人： Itaru Kanno ,  Tetsuo Aoyama ,  Mayumi Hada

IPC分类号： B08B310

CPC分类号： H01L21/02071 ,  B08B3/12 ,  H01L21/32136 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75 ,  Y10S134/902

摘要： In a method of manufacturing a semiconductor device including a capacitor, a refractory metal layer is dry-etched using a resist pattern as a mask, whereby a first electrode pattern formed of refractory metal is provided. Sidewall of the first electrode pattern is cleaned using aqueous solution of a surface active agent. Through this procedure, etching residue formed on the sidewall of the electrode pattern is removed when the electrode pattern of refractory metal is produced through dry etching method.

摘要翻译： 在制造包括电容器的半导体器件的方法中，使用抗蚀剂图案作为掩模对难熔金属层进行干蚀刻，从而提供由难熔金属形成的第一电极图案。 使用表面活性剂的水溶液清洁第一电极图案的侧壁。 通过这种方法，当通过干蚀刻法制造难熔金属的电极图案时，去除在电极图案的侧壁上形成的蚀刻残留物。

公开(公告)号：US6048409A

公开(公告)日：2000-04-11

申请号：US917103

申请日：1997-08-25

申请人： Itaru Kanno ,  Toshiaki Ohmori ,  Hiroshi Tanaka ,  Nobuaki Doi

发明人： Itaru Kanno ,  Toshiaki Ohmori ,  Hiroshi Tanaka ,  Nobuaki Doi

IPC分类号： B08B5/02 ,  A62C5/00 ,  B01F3/04 ,  B01F5/04 ,  B01F5/06 ,  B05B7/00 ,  B05D1/02 ,  B08B3/02 ,  B08B3/10 ,  B24B53/007 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306

CPC分类号： H01L21/02052 ,  B01F3/04049 ,  B01F5/045 ,  B08B3/02 ,  B08B3/022 ,  B08B3/10 ,  B24B53/007 ,  H01L21/67051 ,  Y10S134/902

摘要： The present invention is directed to providing an apparatus which is improved so as to remove a contamination on a substrate efficiently. This apparatus includes a jet nozzle jetting out droplets toward a substrate. A liquid supply device and a gas supply device are connected to the jet nozzle. A mixing device mixing a liquid and a gas supplied to the jet nozzle and changing the liquid into the droplets is provided in the jet nozzle.

摘要翻译： 本发明旨在提供一种改进的装置，以有效地去除衬底上的污染物。 该装置包括向基板喷射液滴的喷嘴。 液体供应装置和气体供应装置连接到喷嘴。 在喷嘴中设置混合液体和供应到喷嘴的气体并将液体变成液滴的混合装置。

公开(公告)号：US5746233A

公开(公告)日：1998-05-05

申请号：US678685

申请日：1996-07-11

申请人： Takeshi Kuroda ,  Itaru Kanno

发明人： Takeshi Kuroda ,  Itaru Kanno

IPC分类号： H01L21/304 ,  B08B3/04 ,  H01L21/00

CPC分类号： H01L21/67057 ,  B08B3/04 ,  Y10S134/902

摘要： Obtained are a washing apparatus inhibiting a washing liquid from losing its washability and a method therefor. A circulating pump (5) circulates a washing liquid (3) successively through a heater (6), a filter (7), and an overflow washing tank (2). The washing liquid (3) is gradually evaporated. On the other hand, a water supplier (10) supplies the overflow washing tank (2) with water through a tube (8). An amine supplier (11) supplies the overflow washing tank (2) with amines through a tube (9). A control unit (12) controls the quantities of the water and amines as supplied. In a washing part (50), therefore, the quantities of the water and amines are inhibited from being reduced upon a lapse of time from operation starting, whereby the washing liquid (3) is inhibited from losing its washability.

摘要翻译： 获得的是洗涤装置抑制洗涤液失去其可洗性的方法及其方法。 循环泵（5）使洗涤液（3）依次通过加热器（6），过滤器（7）和溢流清洗槽（2）循环。 洗涤液（3）逐渐蒸发。 另一方面，供水器（10）通过管（8）向溢流清洗槽（2）供水。 胺供应商（11）通过管（9）向溢流清洗槽（2）供应胺。 控制单元（12）控制供应的水和胺的量。 因此，在洗涤部分（50）中，从操作开始经过一段时间后，可以抑制水和胺的量的减少，从而抑制洗涤液（3）的洗涤性降低。