Plasma etching using a bilayer mask
    3.
    发明授权
    Plasma etching using a bilayer mask 失效
    使用双层掩模的等离子体蚀刻

    公开(公告)号:US5045150A

    公开(公告)日:1991-09-03

    申请号:US210211

    申请日:1988-06-17

    摘要: A bilayer mask is utilized for etching a primary layer, which may be either an aluminum metallization layer or a dielectric layer. The bilayer mask includes both a thin resist layer and a metal imaging layer. The thin resist layer provides for high resolution patterning of the metal imaging layer. The metal imaging layer, in turn, provides for durability to withstand subsequent plasma etching of the underlying primary layer.

    摘要翻译: 使用双层掩模来蚀刻初级层,其可以是铝金属化层或电介质层。 双层掩模包括薄的抗蚀剂层和金属成像层。 薄的抗蚀剂层提供金属成像层的高分辨率图案化。 金属成像层又提供耐久性以承受下一层等离子体蚀刻。