Abstract:
A method for manufacturing a package structure includes: providing a first electrical element and a second electrical element on a surface of a first carrier, wherein the second electrical element is shifted with respect to the first electrical element; and moving the first electrical element along at least one direction substantially parallel with the surface of the first carrier until a first surface of the first electrical element is substantially aligned with a first surface of the second electrical element from a top view.
Abstract:
A semiconductor device package includes a first circuit layer, a second circuit layer, a first semiconductor die and a second semiconductor die. The first circuit layer includes a first surface and a second surface opposite to the first surface. The second circuit layer is disposed on the first surface of the first circuit layer. The first semiconductor die is disposed on the first circuit layer and the second circuit layer, and electrically connected to the first circuit layer and the second circuit layer. The second semiconductor die is disposed on the second circuit layer, and electrically connected to the second circuit layer.
Abstract:
A substrate structure includes a wiring structure and a supporter. The wiring structure includes a first dielectric structure, a first circuit layer, a second dielectric structure and a second circuit layer. The first circuit layer is disposed on the first dielectric structure. The second dielectric structure covers the first dielectric structure and the first circuit layer. A pad portion of the first circuit layer is exposed from the first dielectric structure, and the second circuit layer protrudes from the second dielectric structure. The supporter is disposed adjacent to the first dielectric structure of the wiring structure, and defines at least one through hole corresponding to the exposed pad portion of the first circuit layer.
Abstract:
A semiconductor substrate includes an interconnection structure and a dielectric layer. The dielectric layer surrounds the interconnection structure and defines a first cavity. The first cavity is defined by a first sidewall, a second sidewall, and a first surface of the dielectric layer. The first sidewall is laterally displaced from the second sidewall.
Abstract:
A package substrate includes a dielectric layer, a conductive via disposed in the dielectric layer, and a conductive pattern layer exposed from a first surface of the dielectric layer. The conductive pattern layer includes traces and a via land, the via land extends into the conductive via, and a circumferential portion of the via land is encompassed by the conductive via. A method of making a package substrate includes forming a conductive pattern layer including traces and a via land, providing a dielectric layer to cover the conductive pattern layer, and forming a via hole. Forming the via hole is performed by removing a portion of the dielectric layer and exposing a bottom surface of the via land and at least a portion of a side surface of the via land. A conductive material is applied into the via hole to form a conductive via covering the via land.
Abstract:
The present disclosure relates to a semiconductor device substrate and a method for making the same. The semiconductor device substrate includes a first dielectric layer, a second dielectric layer and an electronic component. The first dielectric layer includes a body portion, and a wall portion protruded from a first surface of the body portion. The wall portion has an end. The second dielectric layer has a first surface and an opposing second surface. The first surface of the second dielectric layer is adjacent to the first surface of the body portion. The second dielectric layer surrounds the wall portion. The end of the wall portion extends beyond the second surface of the second dielectric layer. The electronic component includes a first electrical contact and a second electrical contact. At least a part of the electronic component is surrounded by the wall portion.
Abstract:
A semiconductor device package includes a first conductive structure, a stress buffering layer and a second conductive structure. The first conductive structure includes a substrate, at least one first electronic component embedded in the substrate, and a first circuit layer disposed on the substrate and electrically connected to the first electronic component. The first circuit layer includes a conductive wiring pattern. The stress buffering layer is disposed on the substrate. The conductive wiring pattern of the first circuit layer extends through the stress buffering layer. The second conductive structure is disposed on the stress buffering layer and the first circuit layer.
Abstract:
A semiconductor device package includes a substrate, and interconnection structure and a package body. The interconnection structure is disposed on the substrate. The interconnection structure has a conductive structure and a first dielectric layer covering a portion of the conductive structure. The conductive structure defines an antenna feeding point. The package body is disposed on the substrate and covers the interconnection structure.
Abstract:
A semiconductor device package and a method for manufacturing the same are provided. The semiconductor device package includes a circuit layer and an antenna module. The circuit layer has a first surface, a second surface opposite to the first surface and a lateral surface. The lateral surface extends between the first surface and the second surface. The circuit layer has an interconnection structure. The antenna module has an antenna pattern layer and is disposed on the first surface of the circuit layer. The lateral surface of the circuit layer is substantially coplanar with a lateral surface of the antenna module.
Abstract:
A semiconductor device package includes a carrier, a patterned passivation layer and a first patterned conductive layer. The patterned passivation layer is disposed on the carrier. The first patterned conductive layer is disposed on the carrier and surrounded by the patterned passivation layer. The first patterned conductive layer has a first portion and a second portion electrically disconnected from the first portion. The first portion has a first surface adjacent to the carrier and exposed by the patterned passivation layer. The second portion has a first surface adjacent to the carrier exposed by the patterned passivation layer. The first surface of the first portion is in direct contact with an insulation medium.