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公开(公告)号：US20160087207A1
公开(公告)日：2016-03-24
申请号：US14940340
申请日：2015-11-13
Applicant: AIR PRODUCTS AND CHEMICALS, INC.
Inventor： Xinjian Lei , Moo-Sung Kim
IPC: H01L45/00
CPC classification number: H01L45/1616 , C23C16/22 , C23C16/28 , C23C16/305 , C23C16/45525 , C23C16/45531 , C23C16/45553 , H01L45/06 , H01L45/144
Abstract: Described herein is a method and precursor composition for depositing a multicomponent film. In one embodiment, the method and composition described herein is used to deposit a germanium-containing film such as Germanium Tellurium, Antimony Germanium, and Germanium Antimony Tellurium (GST) films via an atomic layer deposition (ALD) and/or other germanium, tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. In this or other embodiments, the Ge precursor used comprises trichlorogermane.
Abstract translation: 本文描述了一种用于沉积多组分膜的方法和前体组合物。 在一个实施方案中，本文所述的方法和组合物用于通过原子层沉积（ALD）和/或其它锗，碲沉积含锗的膜，例如锗碲，锑锗和锗锑碲（GST）膜 和用于相变存储器和光伏器件的硒基金属化合物。 在本实施方案或其它实施方案中，所用的Ge前体包括三氯锗烷。
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公开(公告)号：US09905415B2
公开(公告)日：2018-02-27
申请号：US14498044
申请日：2014-09-26
Applicant: AIR PRODUCTS AND CHEMICALS, INC.
Inventor： Haripin Chandra , Anupama Mallikarjunan , Xinjian Lei , Moo-Sung Kim , Kirk Scott Cuthill , Mark Leonard O'Neill
CPC classification number: H01L21/0217 , C07F7/10 , C23C14/027 , C23C14/548 , C23C16/18 , C23C16/345 , C23C16/45523 , C23C16/45542 , C23C16/45553 , C23C28/42 , H01L21/02211 , H01L21/02222 , H01L21/02274 , H01L21/0228
Abstract: Methods for forming silicon nitride films are disclosed that comprise the steps of: providing a substrate in a reactor; introducing into the reactor an at least one organoaminosilane having a least one SiH3 group described herein wherein the at least one organoaminosilane reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2.
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公开(公告)号：US20170022612A1
公开(公告)日：2017-01-26
申请号：US15210172
申请日：2016-07-14
Applicant: Air Products and Chemicals, Inc.
Inventor： Xinjian Lei , Moo-Sung Kim , Sergei Vladimirovich Ivanov
IPC: C23C16/50 , C23C16/48 , C23C16/34 , C23C16/455
Abstract: Described herein are methods for forming a Group 13 metal or metalloid nitride film. In one aspect, there is provided a method of forming an aluminum nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one aluminum precursor which reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising non-hydrogen containing nitrogen plasma into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2; and optionally purge the reactor with an inert gas; and wherein the steps are repeated until a desired thickness of the aluminum nitride film is obtained.
Abstract translation: 本文描述了形成第13族金属或准金属氮化物膜的方法。 一方面，提供一种形成氮化铝膜的方法，包括以下步骤：在反应器中提供基材; 向所述反应器中引入至少一种铝前体，其在所述基底的至少一部分表面上反应以提供化学吸附层; 用吹扫气净化反应器; 将包含不含氢的氮等离子体的等离子体引入反应器中以与化学吸附层的至少一部分反应并提供至少一个反应性位点，其中等离子体以约0.01至约1.5W / cm 2的功率密度产生 ; 并且可选地用惰性气体吹扫反应器; 并且其中重复这些步骤直到得到所需的氮化铝膜厚度。
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公开(公告)号：US09543517B2
公开(公告)日：2017-01-10
申请号：US14940340
申请日：2015-11-13
Applicant: AIR PRODUCTS AND CHEMICALS, INC.
Inventor： Xinjian Lei , Moo-Sung Kim
IPC: H01L21/302 , H01L21/461 , H01L45/00 , C23C16/22 , C23C16/28 , C23C16/30 , C23C16/455
CPC classification number: H01L45/1616 , C23C16/22 , C23C16/28 , C23C16/305 , C23C16/45525 , C23C16/45531 , C23C16/45553 , H01L45/06 , H01L45/144
Abstract: Described herein is a method and precursor composition for depositing a multicomponent film. In one embodiment, the method and composition described herein is used to deposit a germanium-containing film such as Germanium Tellurium, Antimony Germanium, and Germanium Antimony Tellurium (GST) films via an atomic layer deposition (ALD) and/or other germanium, tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. In this or other embodiments, the Ge precursor used trichlorogermane.
Abstract translation: 本文描述了一种用于沉积多组分膜的方法和前体组合物。 在一个实施方案中，本文所述的方法和组合物用于通过原子层沉积（ALD）和/或其它锗，碲沉积含锗的膜，例如锗碲，锑锗和锗锑碲（GST）膜 和用于相变存储器和光伏器件的硒基金属化合物。 在这个或其他实施方案中，Ge前体使用三氯锗烷。
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Patent Agency Ranking
公开(公告)号：US09214630B2
公开(公告)日：2015-12-15
申请号：US14245403
申请日：2014-04-04
Applicant: AIR PRODUCTS AND CHEMICALS, INC.
Inventor： Manchao Xiao , Iain Buchanan , Moo-Sung Kim , Sergei Vladimirovich Ivanov , Xinjian Lei , Cheol Seong Hwang , Taehong Gwon
IPC: H01L21/31 , H01L21/469 , H01L45/00 , C23C16/22 , C23C16/28 , C23C16/30 , C23C16/455
CPC classification number: H01L45/1616 , C23C16/22 , C23C16/28 , C23C16/305 , C23C16/45525 , C23C16/45531 , C23C16/45553 , H01L45/06 , H01L45/144
Abstract: Described herein is a method and precursor composition for depositing a multicomponent film. In one embodiment, the method and composition described herein is used to deposit a germanium-containing film such as Germanium Tellurium, Antimony Germanium, and Germanium Antimony Tellurium (GST) films via an atomic layer deposition (ALD) and/or other germanium, tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. In this or other embodiments, the Ge precursor used comprises trichlorogermane.
Abstract translation: 本文描述了一种用于沉积多组分膜的方法和前体组合物。 在一个实施方案中，本文所述的方法和组合物用于通过原子层沉积（ALD）和/或其它锗，碲沉积含锗的膜，例如锗碲，锑锗和锗锑碲（GST）膜 和用于相变存储器和光伏器件的硒基金属化合物。 在本实施方案或其它实施方案中，所用的Ge前体包括三氯锗烷。
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公开(公告)号：US20140242795A1
公开(公告)日：2014-08-28
申请号：US14191730
申请日：2014-02-27
Applicant: AIR PRODUCTS AND CHEMICALS, INC.
Inventor： John Anthony Thomas Norman , Melanie K. Perez , Moo-Sung Kim
IPC: H01L21/285
CPC classification number: H01L21/28556 , C07D233/54
Abstract: Sterically hindered imidazolate ligands are described, along with their synthesis, which are capable of coordinating to Group 2 metals, such as: calcium, magnesium, strontium, in an eta-5 coordination mode which permits the formation of monomeric or dimeric volatile complexes.A compound comprising one or more polysubstituted imidazolate anions coordinated to a metal selected from the group consisting of barium, strontium, magnesium, radium or calcium or mixtures thereof. Alternatively, one anion can be substituted with and a second non-imidazolate anion.Synthesis of the novel compounds and their use to form BST films is also contemplated
Abstract translation: 描述了咪唑啉配体的配位，以及它们的合成，它们能够以允许形成单体或二聚挥发性复合物的eta-5配位模式与第2族金属如钙，镁，锶配位。 包含与选自钡，锶，镁，镭或钙的金属或其混合物配位的一种或多种多取代咪唑酸盐阴离子的化合物。 或者，一个阴离子可以被第二个非咪唑酸阴离子取代。 还考虑了新型化合物的合成及其用于形成BST膜的用途
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7.发明申请BORON-CONTAINING COMPOUNDS, COMPOSITIONS, AND METHODS FOR THE DEPOSITION OF A BORON CONTAINING FILMS 审中-公开含硼含量的化合物，组合物和沉淀含有硼的膜的方法公开(公告)号：US20160293410A1
公开(公告)日：2016-10-06
申请号：US15079585
申请日：2016-03-24
Applicant: Air Products and Chemicals, Inc.
Inventor： Xinjian Lei , Moo-Sung Kim
Abstract: Described herein are boron-containing precursor compounds, and compositions and methods comprising same, for forming boron-containing films. In one aspect, the film is deposited from at least one precursor having the following Formula I or II described herein.
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公开(公告)号：US10745808B2
公开(公告)日：2020-08-18
申请号：US15210172
申请日：2016-07-14
Applicant: Air Products and Chemicals, Inc.
Inventor： Xinjian Lei , Moo-Sung Kim , Sergei Vladimirovich Ivanov
IPC: C23C16/34 , C23C16/50 , C23C16/56 , C23C16/455 , C23C16/30 , C23C16/505 , C23C16/48
Abstract: Described herein are methods for forming a Group 13 metal or metalloid nitride film. In one aspect, there is provided a method of forming an aluminum nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one aluminum precursor which reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising non-hydrogen containing nitrogen plasma into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2; and optionally purge the reactor with an inert gas; and wherein the steps are repeated until a desired thickness of the aluminum nitride film is obtained.
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公开(公告)号：US20150099375A1
公开(公告)日：2015-04-09
申请号：US14498044
申请日：2014-09-26
Applicant: AIR PRODUCTS AND CHEMICALS, INC.
Inventor： Chandra Haripin , Anupama Mallikarjunan , Xinjian Lei , Moo-Sung Kim , Kirk Scott Cuthill , Mark Leonard O'Neill
IPC: H01L21/02
CPC classification number: H01L21/0217 , C07F7/10 , C23C14/027 , C23C14/548 , C23C16/18 , C23C16/345 , C23C16/45523 , C23C16/45542 , C23C16/45553 , C23C28/42 , H01L21/02211 , H01L21/02222 , H01L21/02274 , H01L21/0228
Abstract: Described herein are methods for forming silicon nitride films. In one aspect, there is provided a method of forming a silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one organoaminosilane having a least one SiH3 group described herein wherein the at least one organoaminosilane reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2.
Abstract translation: 这里描述了形成氮化硅膜的方法。 在一个方面，提供一种形成氮化硅膜的方法，包括以下步骤：在反应器中提供衬底; 向反应器中引入至少一种本文所述的至少一种具有至少一个SiH 3基团的有机氨基硅烷，其中所述至少一种有机氨基硅烷在所述基材的至少一部分表面上反应以提供化学吸附层; 用吹扫气净化反应器; 将包含氮气和惰性气体的等离子体引入反应器中以与化学吸附层的至少一部分反应并提供至少一个反应性位点，其中以约0.01至约1.5W / cm 2的功率密度产生等离子体。
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