公开(公告)号：US09627193B2

公开(公告)日：2017-04-18

申请号：US14511719

申请日：2014-10-10

申请人： AIR PRODUCTS AND CHEMICALS, INC.

发明人： Steven Gerard Mayorga ,  Heather Regina Bowen ,  Xinjian Lei ,  Manchao Xiao ,  Haripin Chandra ,  Anupama Mallikarjunan ,  Ronald Martin Pearlstein

IPC分类号： C07F7/02 ,  H01L21/02 ,  C09D1/00 ,  C07F7/10 ,  C23C16/18 ,  C23C16/40 ,  C23C16/455 ,  C23C16/46

CPC分类号： H01L21/02211 ,  C01B21/0682 ,  C01B21/0828 ,  C01B33/021 ,  C01B33/126 ,  C01P2002/02 ,  C07F7/025 ,  C07F7/10 ,  C09D1/00 ,  C09D7/20 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/13

摘要： Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

公开(公告)号：US08993072B2

公开(公告)日：2015-03-31

申请号：US13622117

申请日：2012-09-18

申请人： Air Products and Chemicals, Inc.

发明人： Manchao Xiao ,  Xinjian Lei ,  Mark Leonard O'Neill ,  Bing Han ,  Ronald Martin Pearlstein ,  Haripin Chandra ,  Heather Regina Bowen ,  Agnes Derecskei-Kovacs

IPC分类号： C07F7/02 ,  H05H1/24 ,  C23C16/00 ,  C07F7/12 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02

CPC分类号： C07F7/025 ,  C07F7/12 ,  C23C16/402 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262

摘要： Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I: XmR1nHpSi(NR2R3)4-m-n-p  I wherein X is selected from Cl, Br, I; R1 is selected from linear or branched C1-C10 alkyl group, a C2-C12 alkenyl group, a C2-C12 alkynyl group, a C4-C10 cyclic alkyl, and a C6-C10 aryl group; R2 is selected from a linear or branched C1-C10 alkyl, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; R3 is selected from a branched C3-C10 alkyl group, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and m+n+p is less than 4, wherein R2 and R3 are linked or not linked to form a ring.

摘要翻译： 这里描述的是形成膜的前体和方法。 一方面，提供了具有式I的前体：XmR1nHpSi（NR2R3）4-m-n-p1其中X选自Cl，Br，I; R 1选自直链或支链C 1 -C 10烷基，C 2 -C 12烯基，C 2 -C 12炔基，C 4 -C 10环烷基和C 6 -C 10芳基; R2选自直链或支链C1-C10烷基，C3-C12烯基，C3-C12炔基，C4-C10环烷基和C6-C10芳基; R3选自支链C 3 -C 10烷基，C 3 -C 12烯基，C 3 -C 12炔基，C 4 -C 10环烷基和C 6 -C 10芳基; m为1或2; n为0,1或2; p为0,1或2; 并且m + n + p小于4，其中R2和R3连接或未连接形成环。

公开(公告)号：US20130196082A1

公开(公告)日：2013-08-01

申请号：US13745102

申请日：2013-01-18

申请人： Air Products and Chemicals, Inc.

发明人： Daniel P. Spence ,  Ronald Martin Pearlstein ,  Xinjian Lei ,  Manchao Xiao ,  Richard Ho ,  Mark Leonard O'Neill ,  Haripin Chandra

IPC分类号： C09D7/12

CPC分类号： C09D7/1233 ,  C07F7/10 ,  C07F7/188 ,  C09D7/63

摘要： Alkoxyaminosilane compounds having formula I, and processes and compositions for depositing a silicon-containing film, are described herein: (R1R2)NSiR3OR4OR5  Formula (I) wherein R1 is independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group; R2 and R3 are each independently selected from hydrogen; a linear or branched C1 to C10 alkyl group; a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group; and R4 and R5 are each independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group.

摘要翻译： （R1R2）NSiR3OR4OR5（I）其中R1独立地选自直链或支链C1至C10烷基;（R1R2） C2〜C12烯基; C2〜C12炔基; C4至C10环烷基; 和C 6至C 10芳基; R2和R3各自独立地选自氢; 直链或支链C1至C10烷基; C3至C12烯基，C3至C12炔基，C4至C10环烷基和C6至C10芳基; 并且R 4和R 5各自独立地选自直链或支链C 1至C 10烷基; C2〜C12烯基; C2〜C12炔基; C4至C10环烷基; 和C 6至C 10芳基。

公开(公告)号：US10242864B2

公开(公告)日：2019-03-26

申请号：US15248214

申请日：2016-08-26

申请人： Air Products and Chemicals, Inc.

发明人： Haripin Chandra ,  Meiliang Wang ,  Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Mark Leonard O'Neill ,  Bing Han

IPC分类号： C23C16/00 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C07F7/10

摘要： Atomic layer deposition (ALD) process formation of silicon oxide with temperature >500° C. is disclosed. Silicon precursors used have a formula of: R1R2mSi(NR3R4)nXp  I. wherein R1, R2, and R3 are each independently selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group; R4 is selected from, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group, a C3 to C10 alkylsilyl group; wherein R3 and R4 are linked to form a cyclic ring structure or R3 and R4 are not linked to form a cyclic ring structure; X is a halide selected from the group consisting of Cl, Br and I; m is 0 to 3; n is 0, 1 or 2; and p is 0, 1 or 2 and m+n+p=3; and R1R2mSi(OR3)n(OR4)qXp  II. wherein R1 and R2 are each independently selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group; R3 and R4 are each independently selected from a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group; wherein R3 and R4 are linked to form a cyclic ring structure or R3 and R4 are not linked to form a cyclic ring structure; X is a halide atom selected from the group consisting of Cl, Br and I; m is 0 to 3; n is 0 to 2; q is 0 to 2; p is 0 to 2; and m+n+q+p=3.

公开(公告)号：US20150087139A1

公开(公告)日：2015-03-26

申请号：US14483751

申请日：2014-09-11

申请人： AIR PRODUCTS AND CHEMICALS, INC.

发明人： Mark Leonard O'Neill ,  Manchao Xiao ,  Xinjian Lei ,  Richard Ho ,  Haripin Chandra ,  Matthew R. MacDonald ,  Meiliang Wang

IPC分类号： H01L21/02 ,  C07F7/10

摘要： Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

摘要翻译： 这里描述的是用于形成含硅膜的前体和方法。 在一个方面，前体包含由以下下列通式A至E之一表示的化合物：在一个具体实施方案中，有机氨基硅烷前体对于低温（例如350℃或更低），原子层沉积（ALD） ）或等离子体增强的原子层沉积（PEALD）。 此外，本文描述的是包含本文所述的有机氨基硅烷的组合物，其中有机氨基硅烷基本上不含选自胺，卤化物（例如Cl，F，I，Br），较高分子量物质和痕量金属中的至少一种。

公开(公告)号：US09905415B2

公开(公告)日：2018-02-27

申请号：US14498044

申请日：2014-09-26

申请人： AIR PRODUCTS AND CHEMICALS, INC.

发明人： Haripin Chandra ,  Anupama Mallikarjunan ,  Xinjian Lei ,  Moo-Sung Kim ,  Kirk Scott Cuthill ,  Mark Leonard O'Neill

IPC分类号： C23C16/34 ,  H01L21/02 ,  C07F7/10 ,  C23C16/18 ,  C23C16/455 ,  C23C14/02 ,  C23C14/54 ,  C23C28/00

CPC分类号： H01L21/0217 ,  C07F7/10 ,  C23C14/027 ,  C23C14/548 ,  C23C16/18 ,  C23C16/345 ,  C23C16/45523 ,  C23C16/45542 ,  C23C16/45553 ,  C23C28/42 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228

摘要： Methods for forming silicon nitride films are disclosed that comprise the steps of: providing a substrate in a reactor; introducing into the reactor an at least one organoaminosilane having a least one SiH3 group described herein wherein the at least one organoaminosilane reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2.

公开(公告)号：US20160351389A1

公开(公告)日：2016-12-01

申请号：US15233018

申请日：2016-08-10

申请人： Air Products and Chemicals, Inc.

发明人： Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Haripin Chandra ,  Eugene Jospeh Karwacki, JR. ,  Bing Han ,  Mark Leonard O'Neill

IPC分类号： H01L21/02 ,  C07F7/10 ,  C09D7/12

CPC分类号： H01L21/02211 ,  C07F7/0896 ,  C07F7/10 ,  C09D5/00 ,  C09D7/63 ,  C23C16/30 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/0228

摘要： Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R5Si(NR3R4)xH3-x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R6Si(OR7)xH3-x wherein x=1, 2, 3; an organoaminosilane having a formula of R8N(SiR9(NR10R11)H)2; an organoaminosilane having a formula of R8N(SiR9LH)2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR1R2)H3. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

摘要翻译： 本文描述了用于沉积含碳掺杂硅的膜的组合物，其中组合物包含第一前体，其包含至少一种选自下组的化合物：具有式R 5 Si（NR 3 R 4）x H 3-x的有机氨基烷基硅烷，其中x = 1， 2，3; 具有式R6Si（OR7）xH3-x的有机烷氧基烷基硅烷，其中x = 1,2,3; 具有式R 8 N（SiR 9（NR 10 R 11）H）2的有机氨基硅烷; 具有式R8N（SiR9LH）2的有机氨基硅烷及其组合; 和任选地包含具有下式的化合物的第二前体：Si（NR1R2）H3。 本文还描述了使用该组合物沉积碳掺杂含硅膜的方法，其中所述方法选自以下：循环化学气相沉积（CCVD），原子层沉积（ALD），等离子体增强ALD（PEALD）和 等离子增强CCVD（PECCVD）。

公开(公告)号：US20150024608A1

公开(公告)日：2015-01-22

申请号：US14511719

申请日：2014-10-10

申请人： AIR PRODUCTS AND CHEMICALS, INC.

发明人： Steven Gerard Mayorga ,  Heather Regina Bowen ,  Xinjian Lei ,  Manchao Xiao ,  Haripin Chandra ,  Anupama Mallikarjunan ,  Ronald Martin Pearlstein

IPC分类号： H01L21/02

CPC分类号： H01L21/02211 ,  C01B21/0682 ,  C01B21/0828 ,  C01B33/021 ,  C01B33/126 ,  C01P2002/02 ,  C07F7/025 ,  C07F7/10 ,  C09D1/00 ,  C09D7/20 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/13

摘要： Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

摘要翻译： 这里描述的是用于形成含硅膜的前体和方法。 一方面，提供了式I的前体：其中R 1选自直链或支链C 3至C 10烷基，直链或支链C 3至C 10烯基，直链或支链C 3至C 10炔基，C 1至C 6二烷基氨基 吸电子基团和C6〜C10芳基; R 2选自氢，直链或支链C 1至C 10烷基，直链或支链C 3至C 6烯基，直链或支链C 3至C 6炔基，C 1至C 6二烷基氨基，C 6至C 10芳基，直链或支链C 1至 C6氟化烷基，吸电子基和C4〜C10芳基; 任选地，其中R 1和R 2连接在一起形成选自取代或未取代的芳族环或取代或未取代的脂族环的环; n = 1或2。

公开(公告)号：US10319584B2

公开(公告)日：2019-06-11

申请号：US15233018

申请日：2016-08-10

申请人： Air Products and Chemicals, Inc.

发明人： Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Haripin Chandra ,  Eugene Jospeh Karwacki, Jr. ,  Bing Han ,  Mark Leonard O'Neill

IPC分类号： H01L21/02 ,  C07F7/10 ,  C07F7/08 ,  C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C09D5/00 ,  C09D7/63

摘要： Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R5Si(NR3R4)xH3-x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R6Si(OR7)xH3-x wherein x=1, 2, 3; an organoaminosilane having a formula of R8N(SiR9(NR10R11)H)2; an organoaminosilane having a formula of R8N(SiR9LH)2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR1R2)H3. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

公开(公告)号：US09978585B2

公开(公告)日：2018-05-22

申请号：US13902375

申请日：2013-05-24

申请人： AIR PRODUCTS AND CHEMICALS, INC.

发明人： Manchao Xiao ,  Xinjian Lei ,  Daniel P. Spence ,  Haripin Chandra ,  Mark Leonard O'Neill

IPC分类号： H01L21/02 ,  C07F7/02 ,  C07F7/10 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

CPC分类号： H01L21/02211 ,  C07F7/025 ,  C07F7/10 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45542 ,  C23C16/45553

摘要： Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is a precursor of following Formula I: wherein R1 and R3 are independently selected from linear or branched C3 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, an electron withdrawing and a C6 to C10 aryl group; R2 and R4 are independently selected from hydrogen, a linear or branched C3 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, an electron withdrawing, and a C6 to C10 aryl group; and wherein any one, all, or none of R1 and R2, R3 and R4, R1 and R3, or R2 and R4 are linked to form a ring.