Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
    5.
    发明授权
    Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N 有权
    在N位/单元模拟存储单元器件中以M位/单元密度存储,M> N

    公开(公告)号:US08964466B2

    公开(公告)日:2015-02-24

    申请号:US14264303

    申请日:2014-04-29

    Applicant: Apple Inc.

    Abstract: A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set.

    Abstract translation: 一种用于数据存储的方法包括接收用于存储在包括多个模拟存储器单元的存储器中的数据,并且支持一组内置的编程命令。 每个编程命令在存储器单元的子集中编写从一组N页中选择的相应页面。 存储器单元的子集被编程为通过执行仅从集合中绘制的编程命令的序列来存储数据的M页M> N。

    Memory device with internal signal processing unit
    6.
    发明授权
    Memory device with internal signal processing unit 有权
    内存信号处理单元

    公开(公告)号:US08788906B2

    公开(公告)日:2014-07-22

    申请号:US13860211

    申请日:2013-04-10

    Applicant: Apple Inc.

    Abstract: A method for operating a memory includes storing data in a plurality of analog memory cells that are fabricated on a first semiconductor die by writing input storage values to a group of the analog memory cells. After storing the data, multiple output storage values are read from each of the analog memory cells in the group using respective, different threshold sets of read thresholds, thus providing multiple output sets of the output storage values corresponding respectively to the threshold sets. The multiple output sets of the output storage values are preprocessed by circuitry that is fabricated on the first semiconductor die, to produce preprocessed data. The preprocessed data is provided to a memory controller, which is fabricated on a second semiconductor die that is different from the first semiconductor die. so as to enable the memory controller to reconstruct the data responsively to the preprocessed data.

    Abstract translation: 一种用于操作存储器的方法包括:通过将输入存储值写入到一组模拟存储器单元中,将数据存储在制造在第一半导体管芯上的多个模拟存储器单元中。 在存储数据之后,使用相应的不同的阈值集合读取组中每个模拟存储器单元的多个输出存储值,从而提供分别对应于阈值集合的输出存储值的多个输出组。 输出存储值的多个输出组由在第一半导体管芯上制造的电路预处理,以产生预处理的数据。 预处理数据被提供给存储器控制器,该存储器控制器制造在与第一半导体管芯不同的第二半导体管芯上。 以使得存储器控制器能够响应于预处理的数据重构数据。

    SELECTIVE ACTIVATION OF PROGRAMMING SCHEMES IN ANALOG MEMORY CELL ARRAYS
    7.
    发明申请
    SELECTIVE ACTIVATION OF PROGRAMMING SCHEMES IN ANALOG MEMORY CELL ARRAYS 审中-公开
    模拟记忆体阵列中编程方案的选择性激活

    公开(公告)号:US20140201433A1

    公开(公告)日:2014-07-17

    申请号:US14215208

    申请日:2014-03-17

    Applicant: Apple Inc.

    CPC classification number: G11C27/005 G11C7/02 G11C11/5628 G11C16/3418

    Abstract: A method for data storage includes defining a first programming scheme that programs a group of analog memory cells while reducing interference caused by at least one memory cell that neighbors the group, and a second programming scheme that programs the group of the analog memory cells and does not reduce all of the interference reduced by the first programming scheme. One of the first and second programming schemes is selected based on a criterion defined with respect to the analog memory cells. Data is stored in the group of the analog memory cells using the selected programming scheme.

    Abstract translation: 一种用于数据存储的方法包括:定义第一编程方案,其编程一组模拟存储器单元,同时减少由与该组相邻的至少一个存储器单元引起的干扰;以及第二编程方案,其对该组模拟存储器单元进行编程 不能减少第一编程方案减少的所有干扰。 基于针对模拟存储器单元定义的标准来选择第一和第二编程方案之一。 使用所选择的编程方案将数据存储在模拟存储器单元的组中。

    ADAPTIVE OVER-PROVISIONING IN MEMORY SYSTEMS
    9.
    发明申请
    ADAPTIVE OVER-PROVISIONING IN MEMORY SYSTEMS 有权
    存储系统中的自适应过度配置

    公开(公告)号:US20140122787A1

    公开(公告)日:2014-05-01

    申请号:US14150212

    申请日:2014-01-08

    Applicant: Apple Inc.

    Abstract: A method for data storage includes, in a memory that includes multiple memory blocks, specifying at a first time a first over-provisioning overhead, and storing data in the memory while retaining in the memory blocks memory areas, which do not hold valid data and whose aggregated size is at least commensurate with the specified first over-provisioning overhead. Portions of the data from one or more previously-programmed memory blocks containing one or more of the retained memory areas are compacted. At a second time subsequent to the first time, a second over-provisioning overhead, different from the first over-provisioning overhead, is specified, and data storage and data portion compaction is continued while complying with the second over-provisioning overhead.

    Abstract translation: 一种用于数据存储的方法包括在包括多个存储器块的存储器中,在第一时间指定第一过度供应开销,并且将数据存储在存储器中,同时保留存储器块,其不保存有效数据, 其聚合大小至少与指定的第一超额配置开销相称。 包含一个或多个保留的存储区域的一个或多个预先编程的存储块的数据的部分被压缩。 在第一次之后的第二时间,指定与第一过度供应开销不同的第二过度供应开销,并且在遵循第二过度供应开销的同时继续数据存储和数据部分压缩。

    AUTOMATIC DEFECT MANAGEMENT IN MEMORY DEVICES
    10.
    发明申请
    AUTOMATIC DEFECT MANAGEMENT IN MEMORY DEVICES 有权
    内存设备中的自动缺陷管理

    公开(公告)号:US20140047291A1

    公开(公告)日:2014-02-13

    申请号:US14059982

    申请日:2013-10-22

    Applicant: Apple Inc.

    Abstract: A method for data storage in a memory including multiple memory cells arranged in blocks, includes storing first and second pages in respective first and second groups of the memory cells within a given block of the memory. A pattern of respective positions of one or more defective memory cells is identified in the first group. The second page is recovered by applying the pattern identified in the first group to the second group of the memory cells.

    Abstract translation: 一种用于在包括以块为单位布置的多个存储单元的存储器中的数据存储的方法,包括将第一和第二页存储在存储器的给定块内的存储单元的相应第一和第二组中。 在第一组中识别出一个或多个有缺陷的存储器单元的相应位置的图案。 通过将第一组中识别的模式应用到第二组存储器单元来恢复第二页。

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