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    Emitters behind display
    1.
    发明申请
    Emitters behind display 有权

    公开(公告)号：US20210318418A1

    公开(公告)日：2021-10-14

    申请号：US17214960

    申请日：2021-03-29

    Applicant: Apple Inc.

    Inventor： Arnaud Laflaquiere

    IPC: G01S7/4865 ,  G02B3/00 ,  G01S7/4861

    Abstract: An optoelectronic device includes a display, including a first substrate, which is transparent to optical radiation at a given wavelength, and a first array of display cells including pixel circuit elements disposed on the first substrate at a first pitch, with gaps of a predefined size between the pixel circuit elements. An emitter array includes a second substrate, parallel and in proximity to the first substrate, and a second array of emitters, which are disposed on the second substrate at a second pitch that is different from the first pitch, and which are configured to emit optical radiation at the given wavelength toward the first substrate. Control circuitry is configured to identify the emitters that are aligned with the gaps between the pixel circuit elements and to selectively drive the identified emitters to emit the optical radiation through the gaps.

    Electronic Devices with Transmitter-Receiver Array
    3.
    发明申请
    Electronic Devices with Transmitter-Receiver Array 有权

    公开(公告)号：US20250102631A1

    公开(公告)日：2025-03-27

    申请号：US18673072

    申请日：2024-05-23

    Applicant: Apple Inc.

    Inventor： Siddharth Joshi ,  Arnaud Laflaquiere ,  Nicolas Hotellier ,  Cristiano L. Niclass ,  Keith Lyon

    IPC: G01S7/481 ,  H01S5/02 ,  H01S5/14 ,  H01S5/183 ,  H01S5/42

    Abstract: Disclosed are electronic devices that include an array of light emitting diodes and photosensors formed in a single semiconductor chip. The light emitting diodes may be structured as vertical exterior cavity surface-emitting laser diodes (VECSELs). The photosensors may be formed as resonant cavity photosensors (RCPDs). The VECSELs and the RCPDs of the array may be formed in a common set of semiconductor layers of the single semiconductor chip and separated by isolation regions formed in the common set of semiconductor layers. Also disclosed are dual chip transmitter-receiver systems including a first semiconductor chip having an array of both VECSELs and RCPDs formed in common set of semiconductor layers, and a second semiconductor chip electrically connected to the first semiconductor chip and including control circuitry to enable laser emission from the VECSELs and light reception by the RCPDs.

    Emitters behind display
    4.
    发明授权
    Emitters behind display 有权

    公开(公告)号：US12158546B2

    公开(公告)日：2024-12-03

    申请号：US17214960

    申请日：2021-03-29

    Applicant: Apple Inc.

    Inventor： Arnaud Laflaquiere

    IPC: G01S7/4865 ,  G01S7/4861 ,  G02B3/00

    Abstract: An optoelectronic device includes a display, including a first substrate, which is transparent to optical radiation at a given wavelength, and a first array of display cells including pixel circuit elements disposed on the first substrate at a first pitch, with gaps of a predefined size between the pixel circuit elements. An emitter array includes a second substrate, parallel and in proximity to the first substrate, and a second array of emitters, which are disposed on the second substrate at a second pitch that is different from the first pitch, and which are configured to emit optical radiation at the given wavelength toward the first substrate. Control circuitry is configured to identify the emitters that are aligned with the gaps between the pixel circuit elements and to selectively drive the identified emitters to emit the optical radiation through the gaps.

    Combining light-emitting elements of differing divergence on the same substrate
    5.
    发明授权
    Combining light-emitting elements of differing divergence on the same substrate 有权

    公开(公告)号：US10825952B2

    公开(公告)日：2020-11-03

    申请号：US16477205

    申请日：2018-01-11

    Applicant: APPLE INC.

    Inventor： Arnaud Laflaquiere ,  Marc Drader

    IPC: H01L33/08 ,  H01L27/15 ,  H01L33/00 ,  H01L33/46

    Abstract: An optoelectronic device includes a semiconductor substrate and a monolithic array of light-emitting elements formed on the substrate. The light-emitting elements include a first plurality of first emitters, configured to emit respective first beams of light with a first angular divergence, at respective first positions in the array, and a second plurality of second emitters, configured to emit respective second beams of light with a second angular divergence that is at least 50% greater than the first angular divergence, at respective second positions in the array.

    Vertical emitters with integral microlenses
    7.
    发明申请
    Vertical emitters with integral microlenses 审中-公开

    公开(公告)号：US20200251882A1

    公开(公告)日：2020-08-06

    申请号：US16779609

    申请日：2020-02-02

    Applicant: Apple Inc.

    Inventor： Keith Lyon ,  Arnaud Laflaquiere

    IPC: H01S5/022 ,  H01S5/42 ,  G02B27/42 ,  H01S5/183 ,  H01S5/30 ,  H01S5/02

    Abstract: An optoelectronic device includes a semiconductor substrate having first and second faces. A first array of emitters are formed on the first face of the semiconductor substrate and are configured to emit respective beams of radiation through the substrate. Electrical connections are coupled to actuate selectively first and second sets of the emitters in the first array. A second array of microlenses are formed on the second face of the semiconductor substrate in respective alignment with the emitters in at least one of the first and second sets and are configured to focus the beams emitted from the emitters in the at least one of the first and second sets so that the beams are transmitted from the second face with different, respective first and second focal properties.

    Self-Mixing Interference Device for Sensing Applications
    9.
    发明申请
    Self-Mixing Interference Device for Sensing Applications 有权

    公开(公告)号：US20210003385A1

    公开(公告)日：2021-01-07

    申请号：US16913645

    申请日：2020-06-26

    Applicant: Apple Inc.

    Inventor： Fei Tan ,  Arnaud Laflaquiere ,  Chin Han Lin ,  Keith Lyon ,  Marc A. Drader ,  Weiping Li

    IPC: G01B9/02 ,  H01S5/026 ,  H01S5/30 ,  H01S5/183 ,  H01S5/343

    Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

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