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公开(公告)号:US09818587B2
公开(公告)日:2017-11-14
申请号:US13827736
申请日:2013-03-14
Applicant: Applied Materials, Inc.
Inventor: Maurice E. Ewert , Anantha K. Subramani , Umesh M. Kelkar , Chandrasekhar Balasubramanyam , Joseph M. Ranish
IPC: H01J37/34 , C23C14/54 , C23C14/34 , C23C16/48 , H01L21/67 , H01L21/687 , H01L21/324 , H01L21/768 , C23C16/458 , H01L21/285 , H01L21/02
CPC classification number: C23C14/5806 , C23C14/34 , C23C14/3435 , C23C14/541 , C23C16/4581 , C23C16/481 , H01J37/3411 , H01J37/3488 , H01L21/02104 , H01L21/28518 , H01L21/2855 , H01L21/324 , H01L21/67115 , H01L21/67248 , H01L21/68742 , H01L21/76882
Abstract: Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.
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公开(公告)号:US09863038B2
公开(公告)日:2018-01-09
申请号:US13828827
申请日:2013-03-14
Applicant: Applied Materials, Inc.
Inventor: Maurice E. Ewert , Anantha Subramani , Umesh M. Kelkar , Chandrasekhar Balasubramanyam , Joseph M. Ranish
IPC: C23C14/58 , C23C14/34 , C23C14/54 , C23C16/458 , C23C16/48 , H01J37/34 , H01L21/67 , H01L21/687 , H01L21/285 , H01L21/768 , H01L21/324 , H01L21/02
CPC classification number: C23C14/5806 , C23C14/34 , C23C14/3435 , C23C14/541 , C23C16/4581 , C23C16/481 , H01J37/3411 , H01J37/3488 , H01L21/02104 , H01L21/28518 , H01L21/2855 , H01L21/324 , H01L21/67115 , H01L21/67248 , H01L21/68742 , H01L21/76882
Abstract: Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.
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公开(公告)号:US09423042B2
公开(公告)日:2016-08-23
申请号:US13764204
申请日:2013-02-11
Applicant: APPLIED MATERIALS, INC.
Inventor: Chandrasekhar Balasubramanyam , Helder Lee , Miriam Schwartz , Elizabeth Wu , Kedarnath Sangam
IPC: F16K15/14 , C23C16/44 , C23C16/455 , F16K51/02 , H01L21/677
CPC classification number: F16K15/147 , C23C16/4401 , C23C16/45519 , F16K51/02 , H01L21/67772
Abstract: Methods and apparatus for increasing flow uniformity are provided herein. In some embodiments, a slit valve having increased flow uniformity may be provided, the slit valve may include a housing having an opening disposed therethrough, the opening configured to allow a substrate to pass therethrough; a gas inlet formed in the housing; an outer plenum disposed in the housing and coupled to the gas inlet; an inner plenum disposed in the housing and coupled to the outer plenum via a plurality of holes; and a plurality of gas outlets disposed in the housing and fluidly coupling the opening to the inner plenum.
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