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    METHOD AND APPARATUS FOR PROCESSING A SUBSTRATE
    2.
    发明申请
    METHOD AND APPARATUS FOR PROCESSING A SUBSTRATE 审中-公开

    公开(公告)号：US20200161095A1

    公开(公告)日：2020-05-21

    申请号：US16749631

    申请日：2020-01-22

    申请人： APPLIED MATERIALS, INC.

    发明人： Bharath SWAMINATHAN ,  Hanbing WU ,  John MAZZOCCO

    IPC分类号： H01J37/32 ,  H01J37/34 ,  C23C14/50 ,  C23C14/34 ,  H01L21/687 ,  C23C14/54 ,  C23C14/58 ,  H01L21/67

    摘要： Embodiments of a method and apparatus for annealing a substrate are disclosed herein. In some embodiments, a substrate anneal chamber includes a chamber body having a chamber wall and an interior volume; a lamp assembly disposed in the interior volume and having a plurality of lamps configured to heat a substrate; a slit valve disposed through a wall of the chamber body and above the lamp assembly to allow the substrate to pass into and out of the interior volume; an annular lamp assembly having at least one lamp disposed in a processing volume in an upper portion of the substrate anneal chamber above the slit valve; and a top reflector disposed above the annular lamp assembly to define an upper portion of the processing volume and to reflect radiation downwards towards the lamp assembly, wherein a bottom surface of the top reflector is exposed to the interior volume.

    SPUTTER SOURCE FOR SEMICONDUCTOR PROCESS CHAMBERS
    3.
    发明申请
    SPUTTER SOURCE FOR SEMICONDUCTOR PROCESS CHAMBERS 有权
    半导体工艺气泡的溅射源

    公开(公告)号：US20140262767A1

    公开(公告)日：2014-09-18

    申请号：US13836328

    申请日：2013-03-15

    申请人： APPLIED MATERIALS, INC.

    发明人： Anantha K. SUBRAMANI ,  Tza-Jing GUNG ,  Prashanth KOTHNUR ,  Hanbing WU

    IPC分类号： H01L21/67

    CPC分类号： C23C14/3414 ,  C23C14/3407 ,  C23C14/35 ,  H01J37/34 ,  H01J37/3402 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3426 ,  H01J37/345

    摘要： Embodiments of a sputter source for semiconductor process chambers are provided herein. In some embodiments, a sputter source for a semiconductor process chamber may include: a target comprising a magnetic material to be deposited on a substrate, the magnetic material including a front surface where material is to be sputtered and an opposing back surface; and an outer magnet disposed proximate a back surface of the target and arranged symmetrically with respect to a central axis of the target, wherein the target has an annular groove formed in the back surface of the target disposed proximate the outer magnet to reduce a magnetic permeability of a region of the target proximate the outer magnet, wherein the groove is an unfilled v-shaped groove having an inner angle greater than 90 degrees.

    摘要翻译： 本文提供了用于半导体处理室的溅射源的实施例。 在一些实施例中，用于半导体处理室的溅射源可以包括：靶，其包括待沉积在基底上的磁性材料，所述磁性材料包括物料被溅射的前表面和相对的后表面; 以及设置在所述靶的后表面附近并相对于所述靶的中心轴对称设置的外磁体，其中所述靶具有形成在所述靶的后表面中的邻近所述外磁体设置的环形槽，以减小磁导率 邻近外磁体的靶的区域，其中所述凹槽是具有大于90度的内角的未填充的V形凹槽。

    IN-SITU TEMPERATURE MEASUREMENT IN A NOISY ENVIRONMENT
    6.
    发明申请
    IN-SITU TEMPERATURE MEASUREMENT IN A NOISY ENVIRONMENT 有权
    噪声环境中的现场温度测量

    公开(公告)号：US20140269826A1

    公开(公告)日：2014-09-18

    申请号：US14189664

    申请日：2014-02-25

    申请人： Applied Materials, Inc.

    发明人： Hanbing WU ,  Anantha K. SUBRAMANI ,  Wei W. WANG ,  Aaron Muir HUNTER

    IPC分类号： H01L21/67 ,  G01J5/02

    CPC分类号： H01L21/67248 ,  G01J5/0007 ,  G01J5/0818 ,  H01L21/68742

    摘要： Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. One or more lift pins has a light pipe disposed therein to collect radiation emitted or transmitted by the substrate when the lift pin contacts the substrate surface.

    摘要翻译： 公开了用于处理基材的方法和装置。 该装置是双功能处理室，其可以在基板上进行材料处理和热处理。 该室具有设置在处理位置和室的输送位置之间的环形辐射源。 提升销具有足够的长度以将衬底保持在处理位置，同时衬底支撑件降低到辐射源平面下方以提供衬底的辐射加热。 一个或多个提升销具有设置在其中的光管，用于当提升销接触基板表面时收集由基板发射或传输的辐射。