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公开(公告)号：US20240249920A1
公开(公告)日：2024-07-25
申请号：US18099039
申请日：2023-01-19
Applicant: Applied Materials, Inc.
Inventor： Wenting HOU , Jianxin LEI
IPC: H01J37/32
CPC classification number: H01J37/32366 , H01J37/3244 , H01J2237/332 , H01J2237/3342
Abstract: Apparatus and methods for processes of depositing a film on a substrate in an electronic device fabrication process are provided herein, and more particularly, apparatus and methods for improving deposited film uniformity within high aspect ratio features. In some embodiments, a metal layer deposition process is performed to deposit a metal layer in a feature definition formed in a substrate. A mask layer deposition process is performed to deposit a carbon layer on the metal layer. Following the mask layer deposition process, a resputtering process is performed by applying a radio frequency (RF) signal to the substrate in a presence of an inert gas. Following performing the resputtering process, an etching process is performed to remove the carbon.
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公开(公告)号：US20240136223A1
公开(公告)日：2024-04-25
申请号：US17970872
申请日：2022-10-20
Applicant: Applied Materials, Inc.
Inventor： Zhaoxuan WANG , Jianxin LEI , Wenting HOU , Sung-Kwan KANG , Anand Nilakantan IYER
IPC: H01L21/768 , H01L23/532
CPC classification number: H01L21/76841 , H01L21/76829 , H01L23/53266
Abstract: A method to produce a layered substrate, which includes the steps of depositing a diffusion barrier layer on the substrate; depositing an underlayer comprising a Group 6 metal on the barrier layer; and depositing a ruthenium layer comprising ruthenium on the underlayer, to produce the layered substrate. A layered substrate is also disclosed.
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3.发明申请公开(公告)号：US20150118833A1
公开(公告)日：2015-04-30
申请号：US14062741
申请日：2013-10-24
Applicant: Applied Materials, Inc.
Inventor： Jianxin LEI , Jothilingam RAMALINGAM , Chi-Nung NI
IPC: H01L21/285 , H01L29/66 , C23C14/34 , H01L21/225
CPC classification number: H01L21/28506 , C23C14/16 , C23C14/3414 , C23C14/5813 , H01L21/225 , H01L21/2254 , H01L21/28518 , H01L21/2855 , H01L21/76843 , H01L21/76855 , H01L29/456 , H01L29/66477
Abstract: A method of depositing a contact layer material includes sputtering a target including a metal and a dopant. The contact layer material is conductive and may be used in a transistor device to connect a conductive region, such as a source region or a drain region of metal-oxide semiconductor field effect transistor, to a contact plug. The contact plug is used to connect the source/drain region formed in a semiconducting substrate to metal wiring layers formed above the gate level of a semiconductor device. The resulting contact layer may be a metal silicide including the dopant. In some embodiments, the sputtered metal may be nickel and the dopant may be phosphorous and the resulting contact layer a nickel silicide doped with phosphorous. Embodiments described, in general, can provide reduced contact resistance and thus improved performance in semiconductor devices.
Abstract translation: 沉积接触层材料的方法包括溅射包括金属和掺杂剂的靶。 接触层材料是导电的，并且可以用在晶体管器件中以将诸如金属氧化物半导体场效应晶体管的源极区域或漏极区域的导电区域连接到接触插塞。 接触插头用于将形成在半导体衬底中的源极/漏极区域连接到形成在半导体器件的栅极级上方的金属布线层。 所得到的接触层可以是包括掺杂剂的金属硅化物。 在一些实施例中，溅射金属可以是镍，并且掺杂剂可以是磷，并且所得到的接触层是掺杂有磷的硅化镍。 通常描述的实施例可以提供降低的接触电阻并因此提高半导体器件的性能。
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公开(公告)号：US20220310363A1
公开(公告)日：2022-09-29
申请号：US17838855
申请日：2022-06-13
Applicant: APPLIED MATERIALS, INC.
Inventor： Halbert CHONG , Rong TAO , Jianxin LEI , Rongjun WANG , Keith A. Miller , Irena H. Wysok , Tza-Jing Gung , Xing Chen
Abstract: Methods and apparatus for cleaning a process kit configured for processing a substrate are provided. For example, a process chamber for processing a substrate can include a chamber wall; a sputtering target disposed in an upper section of the inner volume; a pedestal including a substrate support having a support surface to support a substrate below the sputtering target; a power source configured to energize sputtering gas for forming a plasma in the inner volume; a process kit surrounding the sputtering target and the substrate support; and an ACT connected to the pedestal and a controller configured to tune the pedestal using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit, wherein the predetermined potential difference is based on a percentage of total capacitance of the ACT and a stray capacitance associated with a grounding path of the process chamber.
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公开(公告)号：US20220081756A1
公开(公告)日：2022-03-17
申请号：US17021661
申请日：2020-09-15
Applicant: APPLIED MATERIALS, INC.
Inventor： Wenting HOU , Jianxin LEI , Jothilingam RAMALINGAM , Prashanth KOTHNUR , William R. JOHANSON
Abstract: Method and apparatus that forms low resistivity tungsten film on substrates. In some embodiments, a method of reducing resistivity of tungsten includes generating a plasma in a processing volume of a physical vapor deposition (PVD) chamber with a process gas of krypton and using an RF power with a frequency of approximately 60 MHz and a magnetron, applying bias power at frequency of approximately 13.56 MHz to a substrate, and sputtering a tungsten target to deposit a tungsten thin film on the substrate. At least approximately 90% of the deposited tungsten thin film has a crystalline orientation plane approximately parallel to a top surface of the substrate.
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Patent Agency Ranking
公开(公告)号：US20210319989A1
公开(公告)日：2021-10-14
申请号：US16846502
申请日：2020-04-13
Applicant: APPLIED MATERIALS, INC.
Inventor： Halbert CHONG , Rong TAO , Jianxin LEI , Rongjun WANG , Keith A. Miller , Irena H. Wysok , Tza-Jing Gung , Xing Chen
Abstract: Methods and apparatus for cleaning a process kit configured for processing a substrate are provided. For example, a process chamber for processing a substrate can include a chamber wall; a sputtering target disposed in an upper section of the inner volume; a pedestal including a substrate support having a support surface to support a substrate below the sputtering target; a power source configured to energize sputtering gas for forming a plasma in the inner volume; a process kit surrounding the sputtering target and the substrate support; and an ACT connected to the pedestal and a controller configured to tune the pedestal using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit, wherein the predetermined potential difference is based on a percentage of total capacitance of the ACT and a stray capacitance associated with a grounding path of the process chamber.
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公开(公告)号：US20240352574A1
公开(公告)日：2024-10-24
申请号：US18303318
申请日：2023-04-19
Applicant: Applied Materials, Inc.
Inventor： Sundarapandian Ramaling Vijayalaskshmi REDDY , Jianxin LEI , Kirankumar Neelasandra SAVANDAIAH , Zheyuan CHEN , Avinash NAYAK
CPC classification number: C23C14/34 , C23C14/0036 , C23C14/0641 , H01J37/3244 , H01J37/3417 , H01J2237/022 , H01J2237/026 , H01J2237/332
Abstract: A process kit assembly for a process station that includes a cover ring and a shield. The shield includes a lower shield portion configured to interleave with the cover ring. The shield also includes an upper shield portion including a shield port extending from an inner side to an outer side of the upper shield portion. The upper shield portion further includes a shadow surface formed on the inner side configured to shadow the shield port from sputtering deposits. The upper shield portion further includes an upper shield shoulder formed on the outer side. The upper shield portion further includes a lower shield shoulder formed on a lower end of the upper shield portion. The upper shield portion is engageable with an adapter to form an annular chamber around the outer side between the upper shield shoulder and the lower shield shoulder.
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公开(公告)号：US20240282709A1
公开(公告)日：2024-08-22
申请号：US18112564
申请日：2023-02-22
Applicant: Applied Materials, Inc.
Inventor： Zhaoxuan WANG , Jianxin LEI , Wenting HOU , David Maxwell GAGE , Zihao HE
IPC: H01L23/532 , H01L21/02 , H01L21/3205 , H01L21/321 , H01L21/768
CPC classification number: H01L23/53266 , H01L21/0217 , H01L21/02183 , H01L21/02186 , H01L21/02189 , H01L21/02381 , H01L21/02414 , H01L21/02631 , H01L21/32051 , H01L21/3212 , H01L21/76834 , H01L21/7684 , H01L23/5329
Abstract: A method to produce a layered substrate includes depositing a ruthenium layer having a first average grain size on a substrate; annealing the substrate at a temperature and for a period of time sufficient to produce an annealed ruthenium layer having a second average grain size which is greater than the first average grain size; and removing a portion of the ruthenium layer by chemical mechanical planarization to form a planarized ruthenium layer, to produce the layered substrate. A layered substrate is also disclosed.
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公开(公告)号：US20240234204A9
公开(公告)日：2024-07-11
申请号：US17970872
申请日：2022-10-21
Applicant: Applied Materials, Inc.
Inventor： Zhaoxuan WANG , Jianxin LEI , Wenting HOU , Sung-Kwan KANG , Anand Nilakantan IYER
IPC: H01L21/768 , H01L23/532
CPC classification number: H01L21/76841 , H01L21/76829 , H01L23/53266
Abstract: A method to produce a layered substrate, which includes the steps of depositing a diffusion barrier layer on the substrate; depositing an underlayer comprising a Group 6 metal on the barrier layer; and depositing a ruthenium layer comprising ruthenium on the underlayer, to produce the layered substrate. A layered substrate is also disclosed.
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公开(公告)号：US20220005679A1
公开(公告)日：2022-01-06
申请号：US16918513
申请日：2020-07-01
Applicant: APPLIED MATERIALS, INC.
Inventor： Xiaodong WANG , Jianxin LEI , Rongjun WANG
Abstract: Methods and apparatus for plasma chamber target for reducing defects in workpiece during dielectric sputtering are provided. For example, a dielectric sputter deposition target can comprise a dielectric compound having a predefined average grain size ranging from approximately 65 μm to 500 μm, wherein the dielectric compound is at least one of magnesium oxide or aluminum oxide.
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