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    SUBSTRATE SUPPORT ASSEMBLY WITH DEPOSITED SURFACE FEATURES
    9.
    发明申请
    SUBSTRATE SUPPORT ASSEMBLY WITH DEPOSITED SURFACE FEATURES 有权

    公开(公告)号：US20170140970A1

    公开(公告)日：2017-05-18

    申请号：US14944018

    申请日：2015-11-17

    Applicant: Applied Materials, Inc.

    Inventor： Wendell Glenn Boyd, JR. ,  Vijay D. Parkhe ,  Teng-Fang Kuo ,  Zhenwen Ding

    IPC: H01L21/683 ,  C03C17/00

    CPC classification number: H01L21/6833 ,  C03C17/00 ,  H01L21/6875 ,  H01L21/68757

    Abstract: A method of manufacturing an electrostatic chuck includes polishing a surface of a ceramic body of the electrostatic chuck to produce a polished surface and depositing a ceramic coating onto the polished surface of the ceramic body to produce a coated ceramic body. The method further includes disposing a mask over the coated ceramic coating, the mask comprising a plurality of elliptical holes and depositing a ceramic material through the plurality of elliptical holes of the mask to form a plurality of elliptical mesas on the coated ceramic body, wherein the plurality of elliptical mesas have rounded edges. The mask is then removed from the coated ceramic body and the plurality of elliptical mesas are polished.

    CVD oxide surface pre-conditioning by inductively coupled O2 plasma
    10.
    发明授权
    CVD oxide surface pre-conditioning by inductively coupled O2 plasma 有权
    通过电感耦合O2等离子体进行CVD氧化物表面预处理

    公开(公告)号：US09240315B1

    公开(公告)日：2016-01-19

    申请号：US14512312

    申请日：2014-10-10

    Applicant: Applied Materials, Inc.

    Inventor： Ping Han Hsieh ,  Teng-Fang Kuo

    IPC: H01L21/02

    CPC classification number: H01L21/02057 ,  H01L21/0206 ,  H01L21/02299

    Abstract: A method and apparatus for conditioning an oxide surface during a semiconductor device formation process is provided herein. One or more plasma processing operations are performed on a substrate having a fin structure and shallow trench isolation structure (STI) formed thereon. An oxygen containing plasma process may modify surfaces of the STI structure in preparation for an argon containing plasma process. The argon containing plasma process may form a first layer on the fin structure and STI structure and an ammonia fluoride containing plasma process may form a second layer on the first layer. The first and second layers may be removed from the substrate during a subsequent heating process to provide a cleaned fin structure suitable for subsequent processing operations.

    Abstract translation: 本文提供了一种在半导体器件形成过程中调节氧化物表面的方法和装置。 在其上形成有翅片结构和浅沟槽隔离结构（STI）的衬底上执行一个或多个等离子体处理操作。 含氧等离子体工艺可以修饰STI结构的表面，以制备含氩等离子体工艺。 含氩等离子体工艺可以在翅片结构上形成第一层，STI结构和含氟化氨的等离子体工艺可以在第一层上形成第二层。 在随后的加热过程中，第一层和第二层可以从衬底上移除，以提供适于后续处理操作的清洁的鳍结构。

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